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1. 发明申请

WO2013043406A1 METHOD AND SYSTEM FOR OPTIMIZATION OF AN IMAGE ON A SUBSTRATE TO BE MANUFACTURED USING OPTICAL LITHOGRAPHY 审中-公开
标题翻译：使用光学平版印刷制造基板上的图像优化的方法和系统
公开(公告)号：WO2013043406A1
公开(公告)日：2013-03-28
申请号：PCT/US2012/054526
申请日：2012-09-10
申请人： D2S, INC. , FUJIMURA, Akira
发明人： FUJIMURA, Akira
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： G03F1/36 , G03F7/70441 , G03F7/705 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for optimization of an image to be printed on a substrate using optical lithography is disclosed in which a set of charged particle beam shots, some of which overlap, is determined so as to form a target pattern on a surface such as a reticle. The charged particle beam shots are simulated to determine the pattern that would be formed on the surface. Next, a substrate image is calculated from the simulated surface pattern. One or more shots in the set of shots are then modified to improve the calculated substrate image.
摘要翻译：公开了一种用于使用光刻技术来优化要印刷在基板上的图像的方法和系统，其中确定一组带电粒子束的照片，其中一些重叠，以便在表面上形成目标图案，例如十字线。模拟带电粒子射束以确定将在表面上形成的图案。接下来，从模拟表面图案计算基板图像。然后修改该组拍摄中的一个或多个照片以改善计算的底物图像。

2. 发明申请

WO2012148606A3 METHOD AND SYSTEM FOR FORMING NON-MANHATTAN PATTERNS USING VARIABLE SHAPED BEAM LITHOGRAPHY 审中-公开
标题翻译：使用可变形波束光刻法形成非曼哈顿图案的方法和系统
公开(公告)号：WO2012148606A3
公开(公告)日：2012-12-27
申请号：PCT/US2012030487
申请日：2012-03-24
申请人： D2S INC , FUJIMURA AKIRA , BORK INGO , JACQUES ETIENNE
发明人： FUJIMURA AKIRA , BORK INGO , JACQUES ETIENNE
IPC分类号： H01L21/027
CPC分类号： G03F1/78 , G03F1/144 , G03F1/20 , G03F1/36 , G03F7/705 , G06F17/5068 , H01J37/3174 , H01J37/3175 , H01J2237/31754 , H01J2237/31764 , H01J2237/31769 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.
摘要翻译：公开了一种用于压裂或掩模数据准备或邻近效应校正的方法和系统，其中确定了一系列带电粒子束射击，其中一系列射击能够在表面上形成连续的非曼哈顿轨道，使得非曼哈顿轨道具有几乎等于目标LWR的线宽粗糙度（LWR）。还公开了一种用于压裂或掩模数据准备或邻近效应校正的方法和系统，其中确定至少两个射击系列，其中每个射击系列能够在表面上形成连续的非曼哈顿轨道，并且其中轨道之间的间距具有几乎等于目标SWR的空间宽度粗糙度（SWR）。

3. 发明申请

WO2012118616A3 METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电颗粒光栅成像形成图案的方法和系统
公开(公告)号：WO2012118616A3
公开(公告)日：2012-12-06
申请号：PCT/US2012025149
申请日：2012-02-15
申请人： D2S INC , FUJIMURA AKIRA , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
摘要翻译：公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中多个镜头在相同的曝光通过重叠中，并且计算来自该组拍摄的剂量余量。公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中所述一组镜头对图案的不同部分提供不同的剂量，并且计算来自该组照射的剂量余量。还公开了在表面上形成图案的方法。

4. 发明申请

WO2012118621A3 METHOD AND SYSTEM FOR DESIGN OF ENHANCED PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：带电粒子束平版印刷的增强图案设计方法和系统
公开(公告)号：WO2012118621A3
公开(公告)日：2012-11-08
申请号：PCT/US2012025328
申请日：2012-02-16
申请人： D2S INC , FUJIMURA AKIRA , HAGIWARA KAZUYUKI , MEIER STEPHEN F , BORK INGO
发明人： FUJIMURA AKIRA , HAGIWARA KAZUYUKI , MEIER STEPHEN F , BORK INGO
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要翻译：提出了一种用于压裂或掩模数据制备的方法和系统，其中生成重叠照射以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。在各种实施例中，改进可以影响路径或线的端部，或者正方形或近似正方形的图案。模拟用于确定将在表面上产生的图案。

5. 发明申请

WO2012118615A2 METHOD AND SYSTEM FOR DESIGN OF A SURFACE TO BE MANUFACTURED USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电颗粒光栅进行制造的表面设计方法和系统
公开(公告)号：WO2012118615A2
公开(公告)日：2012-09-07
申请号：PCT/US2012/025148
申请日：2012-02-15
申请人： D2S, INC. , FUJIMURA, Akira
发明人： FUJIMURA, Akira
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation are disclosed which can reduce the critical dimension variation of patterns formed on a resist-coated surface using particle beam lithography by providing a higher peak dosage near the perimeter of the patterns than in the interiors of the patterns.
摘要翻译：公开了用于压裂或掩模数据准备的方法和系统，其可以通过在图案的周边附近提供更高的峰值剂量来减少在抗蚀剂涂覆的表面上形成的图案的临界尺寸变化，图案。

6. 发明申请

WO2011078968A3 METHOD AND SYSTEM FOR FRACTURING A PATTERN, AND FOR CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES 审中-公开
标题翻译：用于破碎图案的方法和系统，以及用于多次曝光通过的带电粒子束光刻
公开(公告)号：WO2011078968A3
公开(公告)日：2011-11-03
申请号：PCT/US2010059345
申请日：2010-12-07
申请人： D2S INC , ZABLE HAROLD ROBERT , FUJIMURA AKIRA
发明人： ZABLE HAROLD ROBERT , FUJIMURA AKIRA
IPC分类号： H01J37/317 , G03F1/14 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction using a plurality of exposure passes is disclosed. In one embodiment, base dosages for the plurality of exposure passes are different from each other. In another embodiment, the union of shots from one of the exposure passes is different than the union of shots from a different exposure pass. In a further embodiment, the sum of the base dosage levels for the plurality of exposure passes does not equal a normal dosage. Similar methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed.
摘要翻译：在使用带电粒子束光刻的半导体生产领域中，公开了一种使用多个曝光通道进行压裂或掩模数据准备或邻近效应校正的方法和系统。在一个实施方案中，用于多个曝光通道的基础剂量彼此不同。在另一个实施例中，来自曝光通道之一的镜头的联合不同于来自不同曝光次数的镜头的联合。在另一个实施方案中，多次暴露通过的基础剂量水平的总和不等于正常剂量。还公开了用于制造掩模版和制造集成电路的类似方法。

7. 发明申请

WO2011049740A1 METHOD AND SYSTEM FOR FORMING A PATTERN ON A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电粒子束光刻法在表面形成图案的方法和系统
公开(公告)号：WO2011049740A1
公开(公告)日：2011-04-28
申请号：PCT/US2010/051534
申请日：2010-10-05
申请人： D2S, INC. , KOMAGATA, Takashi , FUJIMURA, Akira , ZABLE, Harold Robert , TUCKER, Michael
发明人： KOMAGATA, Takashi , FUJIMURA, Akira , ZABLE, Harold Robert
IPC分类号： G03F7/20 , G03F1/14 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/78
摘要： In the field of semiconductor production using shaped charged particle beam lithography, a pattern is formed on a surface (130) by dragging a charged particle beam (140) across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape (850,852,854,856,858,860,862). In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam (140). The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process.
摘要翻译：在使用成形带电粒子束光刻的半导体生产领域中，通过在单个延伸镜头中将带电粒子束（140）拖过表面而形成在表面（130）上的图案以形成轨道。在一些实施例中，轨迹可以形成曲线形状的直线路径，曲线路径或周边（850,852,854,856,858,860,862）。在其他实施例中，可以通过改变拖曳梁（140）的速度来改变轨道的宽度。这些技术可以用于通过将带电粒子束拖过抗蚀剂涂覆的晶片以将图案转移到晶片，或者通过将带电粒子束拖动通过掩模版来制造集成电路，其中掩模版用于制造光掩模然后将其用于使用光学光刻工艺将图案转印到晶片。

8. 发明申请

WO2011049735A3 METHOD FOR FRACTURING A PATTERN FOR WRITING WITH A SHAPED CHARGED PARTICLE BEAM WRITING SYSTEM USING DRAGGED SHOTS 审中-公开
公开(公告)号：WO2011049735A3
公开(公告)日：2011-04-28
申请号：PCT/US2010/051393
申请日：2010-10-05
申请人： D2S, INC. , FUJIMURA, Akira , ZABLE, Harold, Robert , TUCKER, Michael
发明人： FUJIMURA, Akira , ZABLE, Harold, Robert , TUCKER, Michael
IPC分类号： H01J37/317 , G03F7/20 , G03F1/14
摘要： In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a shot determined for a shaped charged particle beam writer system comprises dragging the charged particle beam across a surface during the shot, so as to form a complex pattern in a single, extended shot. The dragging may be done with either variable shaped beam (VSB) or character projection (CP) shots. Methods for specifying in the shot data the path for the dragged shot are also disclosed. Other embodiments include using dragged shots with partial projection, varying the dragging velocity during a shot, and combining dragged shots with conventional shots. A method and system for creating glyphs which contain dragged shots is also disclosed.

9. 发明申请

WO2011049735A2 METHOD FOR FRACTURING A PATTERN FOR WRITING WITH A SHAPED CHARGED PARTICLE BEAM WRITING SYSTEM USING DRAGGED SHOTS 审中-公开
标题翻译：用于使用拖鞋来形成带状粒子束波束写入系统的图案的方法
公开(公告)号：WO2011049735A2
公开(公告)日：2011-04-28
申请号：PCT/US2010051393
申请日：2010-10-05
申请人： D2S INC , FUJIMURA AKIRA , ZABLE HAROLD ROBERT , TUCKER MICHAEL
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT , TUCKER MICHAEL
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/78 , Y10S430/143
摘要： In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a shot determined for a shaped charged particle beam writer system comprises dragging the charged particle beam across a surface during the shot, so as to form a complex pattern in a single, extended shot. The dragging may be done with either variable shaped beam (VSB) or character projection (CP) shots. Methods for specifying in the shot data the path for the dragged shot are also disclosed. Other embodiments include using dragged shots with partial projection, varying the dragging velocity during a shot, and combining dragged shots with conventional shots. A method and system for creating glyphs which contain dragged shots is also disclosed.
摘要翻译：在使用成形带电粒子束光刻的半导体生产领域中，公开了一种用于压裂或掩模数据准备或邻近效应校正的方法和系统，其中为成形带电粒子束写入器系统确定的镜头包括将带电粒子束拖过在射击期间形成一个复杂的图案，在一个单一的延伸射击。可以用可变形波束（VSB）或角色投影（CP）拍摄完成拖动。还公开了在拍摄数据中指定拖曳镜头的路径的方法。其他实施例包括使用具有部分投影的拖动镜头，在拍摄期间改变拖动速度，以及将拖动的镜头与传统镜头组合。还公开了一种用于创建包含拖动镜头的字形的方法和系统。

10. 发明申请

WO2008064155A2 STENCIL DESIGN AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：细胞投影粒子束光刻的标准设计和方法
公开(公告)号：WO2008064155A2
公开(公告)日：2008-05-29
申请号：PCT/US2007085097
申请日：2007-11-19
申请人： D2S INC , YOSHIDA KENJI , MITSUHASHI TAKASHI , MATSUSHITA SHOHEI , FUJIMURA AKIRA
发明人： YOSHIDA KENJI , MITSUHASHI TAKASHI , MATSUSHITA SHOHEI , FUJIMURA AKIRA
IPC分类号： H01J37/30 , G03B27/58 , G03F1/16 , G21K1/02 , G21K5/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20
摘要： A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.
摘要翻译：公开了一种用于粒子束光刻的方法和系统，例如电子束（EB）光刻。该方法和系统包括从模板掩模中选择多个单元图案中的一个单元图案并将该单元图案部分地暴露于诸如电子束的粒子束，从而选择性地将单元图案的一部分投影到衬底上。

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