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1. 发明申请

WO2008064155A2 STENCIL DESIGN AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：细胞投影粒子束光刻的标准设计和方法
公开(公告)号：WO2008064155A2
公开(公告)日：2008-05-29
申请号：PCT/US2007085097
申请日：2007-11-19
申请人： D2S INC , YOSHIDA KENJI , MITSUHASHI TAKASHI , MATSUSHITA SHOHEI , FUJIMURA AKIRA
发明人： YOSHIDA KENJI , MITSUHASHI TAKASHI , MATSUSHITA SHOHEI , FUJIMURA AKIRA
IPC分类号： H01J37/30 , G03B27/58 , G03F1/16 , G21K1/02 , G21K5/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/20
摘要： A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.
摘要翻译：公开了一种用于粒子束光刻的方法和系统，例如电子束（EB）光刻。该方法和系统包括从模板掩模中选择多个单元图案中的一个单元图案并将该单元图案部分地暴露于诸如电子束的粒子束，从而选择性地将单元图案的一部分投影到衬底上。

2. 发明申请

WO2007064956A1 SYSTEM AND METHOD OF ELECTRON BEAM WRITING 审中-公开
标题翻译：电子束写入系统与方法
公开(公告)号：WO2007064956A1
公开(公告)日：2007-06-07
申请号：PCT/US2006/046125
申请日：2006-11-30
申请人： CADENCE DESIGN SYSTEMS, INC. , LAPANIK, Dmitri , MATSUSHITA, Shohei , MITSUHASHI, Takashi , WU, Zhigang
发明人： LAPANIK, Dmitri , MATSUSHITA, Shohei , MITSUHASHI, Takashi , WU, Zhigang
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： G03F1/16 , B82Y10/00 , B82Y40/00 , G03F1/78 , G06F17/50 , H01J37/3026 , H01J37/3174 , H01J2237/31762 , H01J2237/31788
摘要： A system and method for improved electron beam writing that is capable of taking design intent, equipment capability and design requirements into consideration. The system and method determines an optimal writing pattern based, at least in part, on the received information.
摘要翻译：一种能够考虑设计意图，设备能力和设计要求的改进电子束写入的系统和方法。该系统和方法至少部分地基于所接收的信息来确定最佳写入模式。

3. 发明申请

WO2008064176A3 METHOD AND SYSTEM FOR IMPROVING PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：提高粒子束光刻技术的方法和系统
公开(公告)号：WO2008064176A3
公开(公告)日：2008-07-31
申请号：PCT/US2007085135
申请日：2007-11-19
申请人： D2S INC , FUJIMURA AKIRA , FONG JAMES , MITSUHASHI TAKASHI , MATSUSHITA SHOHEI
发明人： FUJIMURA AKIRA , FONG JAMES , MITSUHASHI TAKASHI , MATSUSHITA SHOHEI
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.
摘要翻译：用于诸如电子束（EB）光刻的粒子束光刻的方法包括在模板掩模上形成多个单元图案并且利用多边形形状的轮廓使一个或多个单元图案成形。将第一多边形单元图案暴露于粒子束以便将第一多边形单元图案投影到衬底上。具有与第一多边形单元图案的轮廓匹配的轮廓的第二多边形单元图案暴露于诸如电子束的粒子束，以使第二多边形单元图案相邻于第二多边形单元图案到第一多边形单元图案，从而形成具有与第二多边形单元图案的轮廓配合的第一多边形单元图案的轮廓的组合单元。第一和第二细胞图案的多边形轮廓可以包括直线形轮廓。

4. 发明申请

WO2008064176A2 METHOD AND SYSTEM FOR IMPROVING PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：改进颗粒束光刻的方法和系统
公开(公告)号：WO2008064176A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/085135
申请日：2007-11-19
申请人： D2S, INC. , FUJIMURA, Akira , FONG, James , MITSUHASHI, Takashi , MATSUSHITA, Shohei
发明人： FUJIMURA, Akira , FONG, James , MITSUHASHI, Takashi , MATSUSHITA, Shohei
IPC分类号： G21K5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes forming a plurality of cell patterns on a stencil mask and shaping one or more of the cell patterns with a polygonal-shaped contour. A first polygonal-shaped cell pattern is exposed to a particle beam so as to project the first polygonal-shaped cell pattern on a substrate. A second polygonal-shaped cell pattern, having a contour that mates with the contour of the first polygonal-shaped cell pattern, is exposed to the particle beam, such as an electron beam, so as to project the second polygonal-shaped cell pattern adjacent to the first polygonal-shaped cell pattern to thereby form a combined cell with the contour of the first polygonal-shaped cell pattern mated to the contour of the second polygonal-shaped cell pattern. The polygonal-shaped contour of the first and second cell patterns may comprise a rectilinear-shaped contour.
摘要翻译：用于粒子束光刻的方法，例如电子束（EB）光刻，包括在模板掩模上形成多个单元图案并且以多边形轮廓对一个或多个单元图案进行成型。将第一多边形形状的单元图案暴露于粒子束，以将第一多边形单元图案投影到基板上。具有与第一多边形形状的单元图案的轮廓相匹配的轮廓的第二多边形形状的单元图案被暴露于诸如电子束的粒子束，以便将第二多边形单元图案相邻地突出到第一多边形形状的单元图案，从而形成与第二多边形形状的单元图案的轮廓相配合的第一多边形单元图案的轮廓的组合单元。第一和第二单元图案的多边形轮廓可以包括直线形轮廓。

5. 发明申请

WO2008064155A3 STENCIL DESIGN AND METHOD FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
公开(公告)号：WO2008064155A3
公开(公告)日：2008-05-29
申请号：PCT/US2007/085097
申请日：2007-11-19
申请人： D2S, INC. , YOSHIDA, Kenji , MITSUHASHI, Takashi , MATSUSHITA, Shohei , FUJIMURA, Akira
发明人： YOSHIDA, Kenji , MITSUHASHI, Takashi , MATSUSHITA, Shohei , FUJIMURA, Akira
IPC分类号： G21K5/10
摘要： A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.

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