专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012148606A3 METHOD AND SYSTEM FOR FORMING NON-MANHATTAN PATTERNS USING VARIABLE SHAPED BEAM LITHOGRAPHY 审中-公开
标题翻译：使用可变形波束光刻法形成非曼哈顿图案的方法和系统
公开(公告)号：WO2012148606A3
公开(公告)日：2012-12-27
申请号：PCT/US2012030487
申请日：2012-03-24
申请人： D2S INC , FUJIMURA AKIRA , BORK INGO , JACQUES ETIENNE
发明人： FUJIMURA AKIRA , BORK INGO , JACQUES ETIENNE
IPC分类号： H01L21/027
CPC分类号： G03F1/78 , G03F1/144 , G03F1/20 , G03F1/36 , G03F7/705 , G06F17/5068 , H01J37/3174 , H01J37/3175 , H01J2237/31754 , H01J2237/31764 , H01J2237/31769 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (LWR) which nearly equals a target LWR. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (SWR) which nearly equals a target SWR.
摘要翻译：公开了一种用于压裂或掩模数据准备或邻近效应校正的方法和系统，其中确定了一系列带电粒子束射击，其中一系列射击能够在表面上形成连续的非曼哈顿轨道，使得非曼哈顿轨道具有几乎等于目标LWR的线宽粗糙度（LWR）。还公开了一种用于压裂或掩模数据准备或邻近效应校正的方法和系统，其中确定至少两个射击系列，其中每个射击系列能够在表面上形成连续的非曼哈顿轨道，并且其中轨道之间的间距具有几乎等于目标SWR的空间宽度粗糙度（SWR）。

2. 发明申请

WO2012051082A3 METHOD AND SYSTEM FOR FORMING HIGH ACCURACY PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电颗粒光栅形成高精度图案的方法和系统
公开(公告)号：WO2012051082A3
公开(公告)日：2012-06-21
申请号：PCT/US2011055536
申请日：2011-10-09
申请人： D2S INC , FUJIMURA AKIRA , HAGIWARA KAZUYUKI , MEIER STEPHEN F , BORK INGO
发明人： FUJIMURA AKIRA , HAGIWARA KAZUYUKI , MEIER STEPHEN F , BORK INGO
IPC分类号： H01L21/027
CPC分类号： G06F17/5081 , G03F7/70441 , G06F17/5077 , G06F2217/12
摘要： A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.
摘要翻译：公开了一种用于压电或掩模用于带电粒子束光刻的数据准备的方法和系统，其中通过使用部分重叠的镜头来增强由一组带电粒子束射击在一个表面上形成的图案的精度和/或边缘斜率。在一些实施例中，射击的剂量可以在邻近效应校正之前相对于彼此而变化。可以使用粒子束模拟来计算图案和边缘坡度。增强的边缘斜率可以改善表面上产生的图案的临界尺寸（CD）变化和线边缘粗糙度（LER）。

3. 发明申请

WO2012118621A3 METHOD AND SYSTEM FOR DESIGN OF ENHANCED PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：带电粒子束平版印刷的增强图案设计方法和系统
公开(公告)号：WO2012118621A3
公开(公告)日：2012-11-08
申请号：PCT/US2012025328
申请日：2012-02-16
申请人： D2S INC , FUJIMURA AKIRA , HAGIWARA KAZUYUKI , MEIER STEPHEN F , BORK INGO
发明人： FUJIMURA AKIRA , HAGIWARA KAZUYUKI , MEIER STEPHEN F , BORK INGO
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
摘要翻译：提出了一种用于压裂或掩模数据制备的方法和系统，其中生成重叠照射以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。在各种实施例中，改进可以影响路径或线的端部，或者正方形或近似正方形的图案。模拟用于确定将在表面上产生的图案。

4. 发明申请

WO2012068323A3 METHOD FOR MATCHING OF PATTERNS 审中-公开
标题翻译：用于匹配图案的方法
公开(公告)号：WO2012068323A3
公开(公告)日：2012-07-12
申请号：PCT/US2011061108
申请日：2011-11-17
申请人： D2S INC , FUJIMURA AKIRA , KRONMILLER THOMAS , JACQUES ETIENNE , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , KRONMILLER THOMAS , JACQUES ETIENNE , ZABLE HAROLD ROBERT
IPC分类号： H01L21/66 , H01L21/00 , H01L21/027
CPC分类号： G06K9/6857
摘要： A method for matching of two detailed patterns is disclosed in which abstracts of each of the detailed patterns are created, where the abstracts are less complex than the detailed patterns. The abstracts are then compared to determine if the detailed patterns may possibly match, where comparison of the abstracts is faster than comparison of the detailed patterns. If comparison of the abstracts indicates a possible match, then the detailed patterns are compared, otherwise no detailed pattern comparison is needed.
摘要翻译：公开了一种用于匹配两个详细模式的方法，其中创建每个详细模式的摘要，其中摘要比详细模式更复杂。然后比较抽象以确定详细模式是否可能匹配，其中抽象的比较比详细模式的比较更快。如果抽象的比较表示可能的匹配，则比较详细的模式，否则不需要详细的模式比较。

5. 发明申请

WO2005122028A3 LOCAL PREFERRED DIRECTION ARCHITECTURE, TOOLS, AND APPARATUS 审中-公开
标题翻译：本地优选方向架构，工具和装置
公开(公告)号：WO2005122028A3
公开(公告)日：2006-11-16
申请号：PCT/US2005019361
申请日：2005-06-04
申请人： CADENCE DESIGN SYSTEMS INC , HETZEL ASMUS , MALHOTRA ANISH , FUJIMURA AKIRA , JACQUES ETIENNE , FRANKLE JON , HARRISON DAVID S , FEATHER HEATH , MATVEEV ALEXANDRE , KING ROGER
发明人： HETZEL ASMUS , MALHOTRA ANISH , FUJIMURA AKIRA , JACQUES ETIENNE , FRANKLE JON , HARRISON DAVID S , FEATHER HEATH , MATVEEV ALEXANDRE , KING ROGER
IPC分类号： G06F17/50
CPC分类号： G06F17/5077
摘要： Some embodiments of the invention provide a Local Preferred Direction (LPD) wiring model for use with one or more EDA tools. An LPD wiring model allows at least one wiring layer (200) to have a set of regions (205, 210, 215) that each has a different preferred direction (-45°, 0°, 90°) than the particular wiring layer. In addition, each region (205, 210, 215) has a local preferred direction (-45°, 0°, 90°) that differs from the local preferred direction of at least one other region in the set. Furthermore, at least two regions have two different polygonal shapes and no region in the set encompasses another region in the set. Some embodiments also provide a Graphical User Interface (GUI) that facilitates a visual presentation of an LPD design layout and provides tools to create and manipulate LPD regions in a design layout.
摘要翻译：本发明的一些实施例提供了与一个或多个EDA工具一起使用的局部优选方向（LPD）布线模型。 LPD布线模型允许至少一个布线层（200）具有各自具有与特定布线层不同的优选方向（-45°，0°，90°）的一组区域（205,210,215）。此外，每个区域（205,210,215）具有与组中的至少一个其它区域的局部优选方向不同的局部优选方向（-45°，0°，90°）。此外，至少两个区域具有两个不同的多边形形状，并且该集合中的区域不包含该组中的另一区域。一些实施例还提供了一种图形用户界面（GUI），其便于LPD设计布局的视觉呈现，并提供在设计布局中创建和操纵LPD区域的工具。

6. 发明申请

WO2011143013A3 METHOD FOR INTEGRATED CIRCUIT DESIGN AND MANUFACTURE USING DIAGONAL MINIMUM-WIDTH PATTERNS 审中-公开
标题翻译：集成电路设计与制造方法使用对角最小宽度图案
公开(公告)号：WO2011143013A3
公开(公告)日：2012-03-01
申请号：PCT/US2011035082
申请日：2011-05-03
申请人： D2S INC , FUJIMURA AKIRA , CHAU LARRY LAM , NGUYEN TAM DINH THANH
发明人： FUJIMURA AKIRA , CHAU LARRY LAM , NGUYEN TAM DINH THANH
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5077 , H01L27/0207 , H01L27/11
摘要： Methods for designing and manufacturing an integrated circuit are disclosed, in which the physical design process for a standard cell or cells utilizes a preferred diagonal direction for minimum-width patterns on at least one layer, where the standard cell or cells are used in the layout of an integrated circuit. The methods also include forming the patterns on a photomask using model-based fracturing techniques with charged particle beam simulation, and forming the patterns on a substrate such a silicon wafer using the photomask and an optical lithographic process with directional illumination which is optimized for the preferred diagonal direction.
摘要翻译：公开了用于设计和制造集成电路的方法，其中标准单元或单元的物理设计过程在至少一层上利用最小宽度图案的优选对角线方向，其中在布局中使用标准单元或单元的集成电路。所述方法还包括使用基于压缩技术的带有带电粒子束模拟的基于模型的压裂技术在光掩模上形成图案，以及使用光掩模和光定向照明的光学方法在诸如硅晶片的衬底上形成图案，所述光刻工艺针对优选对角方向。

7. 发明申请

WO2010025032A3 METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY 审中-公开
标题翻译：用于光学接近度校正的方法，使用可变形光束光刻法设计和制造光学元件的方法
公开(公告)号：WO2010025032A3
公开(公告)日：2010-06-17
申请号：PCT/US2009053328
申请日：2009-08-10
申请人： D2S INC , FUJIMURA AKIRA , GLASSER LANCE
发明人： FUJIMURA AKIRA , GLASSER LANCE
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/36 , G03F1/68 , G03F1/78 , H01J37/3174
摘要： The present invention describes a method for using variable shaped beam (VSB) shots to form a desired pattern on a surface, where the union of the plurality of VSB shots deviates from the desired pattern. Additionally, the VSB shots are allowed to overlap each other, and the dosages of the shots are allowed to vary. Similar methods are disclosed for optical proximity correction (OPC), fracturing, mask data preparation, and proximity effect correction. A method for creating glyphs is also disclosed, in which patterns that would result on a surface from one or a group of VSB shots are pre-calculated. In some embodiments, an optimization technique may be used to minimize shot count. The method of the present disclosure may be used, for example, in the process of manufacturing an integrated circuit by optical lithography using a reticle, or in the process of manufacturing an integrated circuit using direct write.
摘要翻译：本发明描述了一种使用可变形束（VSB）发射在表面上形成所需图案的方法，其中多个VSB发射的并集偏离所需图案。此外，VSB镜头允许彼此重叠，镜头的剂量可以变化。公开了类似的方法用于光学邻近校正（OPC），压裂，掩模数据准备和邻近效应校正。还公开了一种用于创建字形的方法，其中预先计算将在一个或一组VSB镜头的表面上产生的图案。在一些实施例中，可以使用优化技术来使击发次数最小化。例如，本公开的方法可用于通过使用光罩的光刻制造集成电路的过程中，或者在使用直接写入的制造集成电路的过程中。

8. 发明申请

WO2010025061A3 METHOD FOR DESIGN AND MANUFACTURE OF A RETICLE USING A TWO-DIMENSIONAL DOSAGE MAP AND CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用二维剂量图和带电粒子束光刻的设计和制造方法
公开(公告)号：WO2010025061A3
公开(公告)日：2010-05-14
申请号：PCT/US2009054239
申请日：2009-08-19
申请人： D2S INC , FUJIMURA AKIRA , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , Y10S430/143
摘要： In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. A method for creating glyphs is also disclosed, in which a two-dimensional dosage map of one or more shots is calculated, and the list of shots and the calculated dosage map are stored for later reference.
摘要翻译：在半导体器件制造领域中，公开了使用二维剂量图来制造表面的方法。通过将用于多个照射的剂量图合并到表面的剂量图中来确定用于在表面上产生图像的一组带电粒子束照射。公开了一种用于压印或掩模掩模图像的数据准备的类似方法。还公开了一种用于创建字形的方法，其中计算一个或多个照片的二维剂量图，并且存储照片列表和计算的剂量图以供以后参考。

9. 发明申请

WO2012118615A3 METHOD AND SYSTEM FOR DESIGN OF A SURFACE TO BE MANUFACTURED USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电颗粒光栅进行制造的表面设计方法和系统
公开(公告)号：WO2012118615A3
公开(公告)日：2013-01-03
申请号：PCT/US2012025148
申请日：2012-02-15
申请人： D2S INC , FUJIMURA AKIRA
发明人： FUJIMURA AKIRA
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation are disclosed which can reduce the critical dimension variation of patterns formed on a resist-coated surface using particle beam lithography by providing a higher peak dosage near the perimeter of the patterns than in the interiors of the patterns.
摘要翻译：公开了用于压裂或掩模数据准备的方法和系统，其可以通过在图案的周边附近提供比在图案的内部提供更高的峰值剂量来减小使用粒子束光刻形成在抗蚀剂涂覆的表面上的图案的临界尺寸变化图案。

10. 发明申请

WO2012118616A3 METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电颗粒光栅成像形成图案的方法和系统
公开(公告)号：WO2012118616A3
公开(公告)日：2012-12-06
申请号：PCT/US2012025149
申请日：2012-02-15
申请人： D2S INC , FUJIMURA AKIRA , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
摘要翻译：公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中多个镜头在相同的曝光通过重叠中，并且计算来自该组拍摄的剂量余量。公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中所述一组镜头对图案的不同部分提供不同的剂量，并且计算来自该组照射的剂量余量。还公开了在表面上形成图案的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式