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1. 发明申请

WO2014066740A1 SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有改进的可靠性和操作寿命的半导体器件及其制造方法
公开(公告)号：WO2014066740A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/066778
申请日：2013-10-25
申请人： ELEMENT SIX TECHNOLOGIES US CORPORATION , FRANCIS, Daniel , BABIC, Dubravko , NASSER-FAILI, Firooz , EJECKAM, Felix , DIDUCK, Quentin , SMART, Joseph , MATTHEWS, Kristopher , LOWE, Frank
发明人： FRANCIS, Daniel , BABIC, Dubravko , NASSER-FAILI, Firooz , EJECKAM, Felix , DIDUCK, Quentin , SMART, Joseph , MATTHEWS, Kristopher , LOWE, Frank
IPC分类号： H01L21/762
CPC分类号： H01L29/32 , H01L21/02527 , H01L21/0262 , H01L21/6835 , H01L21/76254 , H01L29/04 , H01L29/1602 , H01L29/2003 , H01L2221/68318 , H01L2221/6834 , H01L2221/68372
摘要： Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time. The methods as described herein can be used to fabricate working semiconductor wafer structures which have a low concentration of dislocation defects throughout the active semiconductor layer structure and which do not comprise highly dislocated strain-matching layers which are present in the native semiconductor growth substrate
摘要翻译：描述了制造半导体晶片结构的方法，其具有改善的寿命和可靠性。所述方法包括将有源半导体层结构从天然非晶格匹配半导体生长衬底转移到工作衬底，其中应变匹配层以及可选地一部分有源半导体层结构被去除。在某些实施例中，将有源半导体层结构附着到工作衬底的工艺包括在高温下退火一段特定的时间。本文所述的方法可用于制造在整个有源半导体层结构中具有低浓度位错缺陷并且不包含存在于天然半导体生长衬底中的高位错应变匹配层的工作半导体晶片结构

2. 发明申请

WO2015031833A3 SEMICONDUCTOR DEVICE STRUCTURES COMPRISING POLYCRYSTALLINE CVD DIAMOND WITH IMPROVED NEAR-SUBSTRATE THERMAL CONDUCTIVITY 审中-公开
公开(公告)号：WO2015031833A3
公开(公告)日：2015-03-05
申请号：PCT/US2014/053544
申请日：2014-08-29
申请人： ELEMENT SIX TECHNOLOGIES US CORPORATION , NASSER-FAILI, Firooz
发明人： NASSER-FAILI, Firooz
IPC分类号： H01L21/02
摘要： A semiconductor device structure comprising: a layer of III-V compound semiconductor material; a layer of polycrystalline CVD diamond material; and an interface region between the layer of III-V compound semiconductor material and the layer of polycrystalline CVD diamond material, the interface region including a diamond nucleation layer of polycrystalline CVD diamond which is formed during an initial nucleation phase of polycrystalline CVD diamond growth over a substrate comprising the layer of III-V compound semiconductor material, wherein the diamond nucleation layer is such that a Raman signal generated by a laser focused on a region comprising the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm -1 having a full width half-maximum of no more than 5.0 cm -1, wherein the diamond nucleation layer is such that said Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cm -1 having a height which is no more than 20% of a height of the sp3 carbon peak at 1332 cm -1 after background subtraction when using a Raman excitation source at 633 nm; and (ii) the sp3 carbon peak at 1332 cm -1 is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm, and wherein an average nucleation density at a nucleation surface of the diamond nucleation layer is no less than 1 x 10 8 cm -2 and no more than 1 x 10 12 cm -2 .

3. 发明申请

WO2008091910A3 COMPOSITE WAFERS HAVING BULK-QUALITY SEMICONDUCTOR LAYERS 审中-公开
公开(公告)号：WO2008091910A3
公开(公告)日：2008-07-31
申请号：PCT/US2008/051733
申请日：2008-01-22
申请人： GROUP4 LABS, LLC , FRANCIS, Daniel , EJECKAM, Felix , WASSERBAUER, John , FAILI, Firooz , BABIC, Dubravko
发明人： FRANCIS, Daniel , EJECKAM, Felix , WASSERBAUER, John , FAILI, Firooz , BABIC, Dubravko
IPC分类号： C30B25/02 , H01L21/20
摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

4. 发明申请

WO2015031833A2 SEMICONDUCTOR DEVICE STRUCTURES COMPRISING POLYCRYSTALLINE CVD DIAMOND WITH IMPROVED NEAR-SUBSTRATE THERMAL CONDUCTIVITY 审中-公开
标题翻译：包含具有改进的近基板热导率的多晶CVD金刚石的半导体器件结构
公开(公告)号：WO2015031833A2
公开(公告)日：2015-03-05
申请号：PCT/US2014053544
申请日：2014-08-29
申请人： ELEMENT SIX TECHNOLOGIES US CORP , NASSER-FAILI FIROOZ
发明人： NASSER-FAILI FIROOZ
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , C23C16/0245 , C23C16/0254 , C23C16/0272 , C23C16/27 , H01L21/02115 , H01L21/02389 , H01L21/02444 , H01L21/02488 , H01L21/02513 , H01L21/02527 , H01L21/0262 , H01L21/02658 , H01L21/31111 , H01L23/3732 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device structure comprising: a layer of III-V compound semiconductor material; a layer of polycrystalline CVD diamond material; and an interface region between the layer of III-V compound semiconductor material and the layer of polycrystalline CVD diamond material, the interface region including a diamond nucleation layer of polycrystalline CVD diamond which is formed during an initial nucleation phase of polycrystalline CVD diamond growth over a substrate comprising the layer of III-V compound semiconductor material, wherein the diamond nucleation layer is such that a Raman signal generated by a laser focused on a region comprising the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm-1 having a full width half-maximum of no more than 5.0 cm-1, wherein the diamond nucleation layer is such that said Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cm-1 having a height which is no more than 20% of a height of the sp3 carbon peak at 1332 cm-1 after background subtraction when using a Raman excitation source at 633 nm; and (ii) the sp3 carbon peak at 1332 cm-1 is no less than 10% of local background intensity in a Raman spectrum using a Raman excitation source at 785 nm, and wherein an average nucleation density at a nucleation surface of the diamond nucleation layer is no less than 1 x 108 cm-2and no more than 1 x 1012 cm-2.
摘要翻译：一种半导体器件结构，包括：III-V族化合物半导体材料层; 一层多晶CVD金刚石材料; 以及在III-V族化合物半导体材料层和多晶CVD金刚石材料层之间的界面区域，界面区域包括多晶CVD金刚石的金刚石成核层，其在多晶CVD金刚石生长的初始成核阶段期间形成，其中所述金刚石成核层使得由聚焦在包含所述金刚石成核层的区域上的激光产生的拉曼信号在1332cm -1处展现sp3碳峰，所述sp3碳峰具有全宽度半最大值不超过5.0cm -1，其中所述金刚石成核层使得所述拉曼信号进一步表现出以下特征中的一个或两个：（i）1550cm -1处的sp 2碳峰，其高度为当在633nm处使用拉曼激发源时背景扣除后1332cm-1处sp3碳峰的高度不超过20％; 和（ii）1332cm -1处的sp 3碳峰在拉曼光谱中使用拉曼激发源在785nm处不小于局部背景强度的10％，并且其中在金刚石成核的成核表面处的平均成核密度层不小于1×10 8 cm -2并且不大于1×10 12 cm -2。

5. 发明申请

WO2008091910A2 COMPOSITE WAFERS HAVING BULK-QUALITY SEMICONDUCTOR LAYERS AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：具有质量优良半导体层的复合波长及其制造方法
公开(公告)号：WO2008091910A2
公开(公告)日：2008-07-31
申请号：PCT/US2008051733
申请日：2008-01-22
申请人： GROUP4 LABS LLC , FRANCIS DANIEL , EJECKAM FELIX , WASSERBAUER JOHN , FAILI FIROOZ , BABIC DUBRAVKO
发明人： FRANCIS DANIEL , EJECKAM FELIX , WASSERBAUER JOHN , FAILI FIROOZ , BABIC DUBRAVKO
IPC分类号： G01T1/16
CPC分类号： G01T1/24 , H01L21/02389 , H01L21/02444 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02587 , H01L21/02664 , H01L21/76254 , H01L27/14694 , H01L33/0079 , Y10T428/30
摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
摘要翻译：公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。剩下的半导体晶片可以重新使用。合成金刚石基底用作散热器和机械基板。

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