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    • 5. 发明申请
    • VERTICAL GEOMETRY LIGHT EMITTING DIODE WITH GROUP III NITRIDE ACTIVE LAYER AND EXTENDED LIFETIME
    • 垂直几何发光二极管与III组氮活性层和延长生命周期
    • WO1996009653A1
    • 1996-03-28
    • PCT/US1995011472
    • 1995-09-19
    • CREE RESEARCH INC.EDMOND, John, AdamBULMAN, Gary, E.KONG, Hua-ShuangDMITRIEV, Vladimir
    • CREE RESEARCH INC.
    • H01L33/00
    • H01L33/32H01L33/007
    • A light emitting diode (20) emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate (21); an ohmic contact (22) to the silicon carbide substrate; a conductive buffer layer (23) on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula AxB1-xN, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure (24) including a p-n junction on the buffer layer in which the active (25) and heterostructure layers (26, 27) are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
    • 发光二极管(20)在可见光谱的蓝色部分发射,其特征在于延长的使用寿命。 发光二极管包括导电碳化硅衬底(21); 与所述碳化硅衬底的欧姆接触(22); 选自氮化镓,氮化铝,氮化铟,具有式AxB1-xN的三元III族氮化物的基板上的导电缓冲层(23),其中A和B是III族元素,其中x为零 ,一个或零和一个之间的分数,以及碳化硅与这种三元III族氮化物的合金; 以及包括在所述缓冲层上的p-n结的双异质结构(24),其中所述活性(25)和异质结构层(26,27)选自二元III族氮化物和三元III族氮化物。