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    • 1. 发明申请
    • ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置的照明系统
    • WO2016180542A1
    • 2016-11-17
    • PCT/EP2016/000795
    • 2016-05-13
    • CARL ZEISS SMT GMBH
    • DEGÜNTHER, Markus
    • G03F7/20
    • G03F7/70075G03F7/70116G03F7/70191G03F7/702G03F7/70208
    • An illumination system of a microlithographic projection exposure apparatus comprises a first and a second optical raster plate (54a). An irradiance distribution of projection light on the first and second optical raster plate determines an angular light distribution of the projection light exclusively at a first portion (60a) and a second portion, respectively, of an illuminated field. The second portion is distinct from and arranged adjacent to the first portion. This makes it possible to produce different illumination settings in different adjacent portions (60a, 60b) on the mask (14). First and second Fourier optics (58a, 58b) establish a Fourier relationship between the first and second optical raster plates one the one hand and the first and second portion on the other hand. The first and second Fourier optics (58a) have a first and second focal length, respectively, that are variable in response to a focal length change command signal from a control unit (45).
    • 微光刻投影曝光装置的照明系统包括第一和第二光栅板(54a)。 投影光在第一和第二光栅板上的辐照度分布决定了分别在照明场的第一部分(60a)和第二部分处的投影光的角度光分布。 第二部分与第一部分相邻并且布置成与第一部分相邻。 这使得可以在掩模(14)上的不同相邻部分(60a,60b)中产生不同的照明设置。 第一和第二傅里叶光学元件(58a,58b)在第一和第二光栅板之间建立傅立叶关系,一方面是第一和第二光栅板,另一方面在第一和第二部分之间建立傅立叶关系。 第一和第二傅立叶光学元件(58a)分别具有响应于来自控制单元(45)的焦距变化命令信号而变化的第一和第二焦距。
    • 2. 发明申请
    • MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND METHOD OF CORRECTING OPTICAL WAVEFRONT DEFORMATIONS IN SUCH AN APPARATUS
    • 微波投影曝光装置及其在这种装置中校正光波形变形的方法
    • WO2015032418A1
    • 2015-03-12
    • PCT/EP2013/002693
    • 2013-09-09
    • CARL ZEISS SMT GMBH
    • GRUNER, ToralfWEISS, RobertHOLZMANN, Jörg
    • G03F7/20
    • G03F7/70891G03F7/70308G03F7/70808
    • A microlithographic projection exposure apparatus (10) comprises a correction device (40) that is configured to correct optical wavefront deformations and comprises a first optical element (42a), a second optical element (42b) and a drive mechanism (44) that is configured to move the first and second optical elements between a first arrangement and a second arrangement. In the first arrangement the first optical element (42a) is an inner optical element having at least a portion that is arranged in a projection light path (PLP), and the second optical element (42b) is an outer optical element that is arranged completely outside the projection light path. In the second arrangement the second optical element is the inner optical element and the first optical element is the outer optical element. The correction device further comprises a temperature control device (50a, 50b) that is configured to modify a temperature distribution in the outer optical element.
    • 微光刻投影曝光装置(10)包括校正装置(40),其被配置为校正光波前变形,并且包括被构造成第一光学元件(42a),第二光学元件(42b)和驱动机构(44) 以在第一布置和第二布置之间移动第一和第二光学元件。 在第一布置中,第一光学元件(42a)是具有布置在投影光路(PLP)中的至少一部分的内部光学元件,并且第二光学元件(42b)是完全布置的外部光学元件 在投影光路外。 在第二布置中,第二光学元件是内部光学元件,第一光学元件是外部光学元件。 校正装置还包括被配置为修改外部光学元件中的温度分布的温度控制装置(50a,50b)。
    • 3. 发明申请
    • BEARBEITUNGSKOPF FÜR EINE LASERBEARBEITUNGSVORRICHTUNG MIT EINEM WEGLÄNGEMODULATOR IN DEM REFERENZARM; VERFAHREN ZUM LASERBEARBEITUNG EINES WERKSTÜCKES MIT ENTSPRECHENDEN SCHRITTEN
    • 工作头与参考甲WEGLÄNGEMODULATOR激光处理装置; 方法的激光加工用适当的步骤的工件
    • WO2014183849A1
    • 2014-11-20
    • PCT/EP2014/001234
    • 2014-05-08
    • PRECITEC OPTRONIK GMBH
    • KOGEL-HOLLACHER, MarkusSCHÖNLEBER, Martin
    • B23K26/03B23K26/04B23K26/08G01B9/00
    • B23K26/048B23K26/03B23K26/046B23K26/0643B23K26/0665B23K26/082G01B9/02044G01B9/02091
    • Es betrifft einen Bearbeitungskopf für eine Laserbearbeitungsvorrichtung, die für die Bearbeitung eines Werkstücks (24) mit Laserstrahlung (30) eingerichtet ist. Der Laserbearbeitungskopf weist eine verstellbare Fokussieroptik (34) auf, welche die Laserstrahlung (30) in einem Brennfleck (22) fokussiert. Der Abstand des Brennflecks (22) zu einem Bearbeitungskopf ist durch Verändern der Brennweite der Fokussieroptik (34) veränderbar. Eine Scaneinrichtung (44) lenkt die Laserstrahlung (30) in unterschiedliche Richtungen ab. Ein optischer Kohärenztomographen (48) misst einen Abstand zwischen dem Bearbeitungskopf und dem Werkstück (24). Dabei interferiert in dem Kohärenztomographen (48) von einer Messlichtquelle (50) erzeugtes Messlicht (52), das von dem Werkstück (24) reflektiert wurde, mit Messlicht, das in einem Referenzarm (60) eine optische Weglänge zurückgelegt hat. Im Referenzarm (60) ist ein Weglängenmodulator (74) angeordnet, der synchron zu und in Abhängigkeit von einer Veränderung der Brennweite der Fokussieroptik (34) die optische Weglänge im Referenzarm (60) nachführt.
    • 它涉及的加工头,用于加工工件设置于激光辐射(30)的激光加工装置(24)。 激光加工头具有其重点在焦斑(22)将激光辐射(30)的可调节的聚焦光学器件(34)。 焦斑(22)的加工头的距离可以通过改变聚焦光学器件(34)的焦距被改变。 的扫描装置(44)偏转不同方向的激光辐射(30)。 一种光学相干层析成像(48)测量所述加工头和所述工件(24)之间的距离。 在这种情况下,干扰在从测量光源(50)的相干层析成像(48)产生的测量光(52)从所述工件(24)与测量已穿过在参考臂(60)的光路长度的光反射。 在参考臂(60)被布置Weglängenmodulator(74)重新调整同步地,并响应于所述聚焦光学器件(34)在参考臂(60)的光路长度的焦距的变化。
    • 4. 发明申请
    • MICROLITHOGRAPHIC APPARATUS AND METHOD OF VARYING A LIGHT IRRADIANCE DISTRIBUTION
    • 微光学设备和改变光线辐射分布的方法
    • WO2014154229A1
    • 2014-10-02
    • PCT/EP2013/000952
    • 2013-03-28
    • CARL ZEISS SMT GMBH
    • WALTER, HolgerWOLF, Alexander
    • G03F7/20G02B27/58
    • G03F7/70883G02B27/58G03F7/70091G03F7/70266G03F7/70308
    • A microlithographic apparatus (10) comprises an objective (20) that comprises a transmission filter (42) that is configured to variably modify a light irradiance distribution in a projection light path. The transmission filter (42) comprises a plurality of gas outlet apertures (44, 144) that are configured to emit gas flows (72, 172) that pass through a space (55) through which projection light (PL) propagates during operation of the microlithographic apparatus (10). The transmission filter (42) further comprises a control unit (48) which is configured to vary a number density of ozone molecules in the gas flows (72, 172) individually for each gas flow. In this manner it is possible to finally adjust the transmittance distribution (TD42) of the transmission filter (42).
    • 微光刻设备(10)包括物镜(20),其包括被配置为可变地修改投影光路中的光照度分布的透射滤光器(42)。 传输过滤器(42)包括多个气体出口孔(44,144),其被配置成发射通过空间(55)的气流(72,172),在空间(55)中,投影光(PL)在操作期间传播通过该空间 微光刻设备(10)。 透射过滤器(42)还包括控制单元(48),其被配置为针对每个气体流量分别改变气体流(72,172)中的臭氧分子的数量密度。 以这种方式,可以最终调整透射过滤器(42)的透射率分布(TD42)。
    • 5. 发明申请
    • MICROLITHOGRAPHIC APPARATUS
    • 微型计算机
    • WO2014139543A1
    • 2014-09-18
    • PCT/EP2013/000728
    • 2013-03-13
    • CARL ZEISS SMT GMBH
    • BITTNER, BorisWABRA, NorbertSCHNEIDER, SonjaSCHNEIDER, RicardaHODENBERG, Martin vonWAGNER, HendrikILIEW, Rumen
    • G03F7/20H01S5/00H01S5/40
    • G03F7/70191G03F7/702G03F7/70891
    • A projection objective of a microlithographic projection apparatus comprises a wavefront correction device (42) comprising a mirror substrate (44; 44a, 44b) that has two opposite optical surfaces (46, 48), through which projection light passes, and a circumferential rim surface (50) extending between the two optical surfaces (46, 48). A first and a second optical system (OS1, OS2) are configured to direct first and second heating light (HL1, HL2) to different portions of the rim surface (50) such that at least a portion of the first and second heating light enters the mirror substrate (44; 44a, 44b). A temperature distribution caused by a partial absorption of the heating light (HL1, HL2) results in a refractive index distribution inside the mirror substrate (44; 44a, 44b) that corrects a wavefront error. At least the first optical system (OS1) comprises a focusing optical element (55) that focuses the first heating light in a focal area (56) such that the first heating light emerging from the focal area (56) impinges on the rim surface (50).
    • 微光刻投影装置的投影物镜包括波阵面校正装置(42),其包括反射镜基板(44; 44a,44b),所述反射镜基板具有两个相对的光学表面(46,48),投射光通过该光学表面,周向边缘表面 (50)在两个光学表面(46,48)之间延伸。 第一和第二光学系统(OS1,OS2)构造成将第一和第二加热光(HL1,HL2)引导到边缘表面(50)的不同部分,使得第一和第二加热光的至少一部分进入 镜基板(44; 44a,44b)。 由加热光(HL1,HL2)的部分吸收引起的温度分布导致校正波前误差的反射镜基板(44; 44a,44b)内部的折射率分布。 至少第一光学系统(OS1)包括聚焦光学元件(55),其将第一加热光聚焦在聚焦区域(56)中,使得从焦点区域(56)出射的第一加热光照射在边缘表面上 50)。
    • 6. 发明申请
    • METHOD FOR OPERATING A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 操作微波投影曝光装置的方法
    • WO2014019675A1
    • 2014-02-06
    • PCT/EP2013/002243
    • 2013-07-29
    • CARL ZEISS SMT GMBH
    • DEGÜNTHER, Markus
    • G03F7/20G02B26/08
    • G03F7/702G02B19/0095G02B26/0833G03F7/70066G03F7/70075G03F7/70116G03F7/70233
    • In a method for operating a microlithographic projection exposure apparatus, a facet mirror (72) is illuminated with projection light (PL) having a center wavelength of between 5 nm and 30 nm. The facet mirror (72) has a plurality of adjustable mirror facets (86), wherein groups of adjacent mirror facets (86) form regions (88) which are imaged by an optical unit (83, 76, 78, 80) onto an object plane (30) of a projection objective (20) of the projection exposure apparatus (10). There the images of the regions (88) are superimposed in an object field (88'). An illumination field (24), which is identical to the object field (88') or to a part thereof, is illuminated with the projection light (PL). A mask (16) containing structures (12) to be imaged is moved in the object plane (30) of the projection objective (26) in such a way that the illumination field (24) scans over the mask (16). According to the invention, during step c) the size of the illumination field (24) is varied by adjusting at least one mirror facet (86).
    • 在用于操作微光刻投影曝光装置的方法中,用中心波长在5nm和30nm之间的投影光(PL)照射刻面镜(72)。 小面反射镜(72)具有多个可调整的镜面(86),其中相邻的镜面(86)组形成区域(88),其由光学单元(83,76,78,80)成像到物体上 投影曝光装置(10)的投影物镜(20)的平面(30)。 在区域(88)中的图像被叠加在物场(88')中。 与物场(88')或其一部分相同的照明场(24)被投影光(PL)照射。 包含要成像的结构(12)的掩模(16)以使得照明场(24)扫过掩模(16)的方式在投影物镜(26)的物平面(30)中移动。 根据本发明,在步骤c)期间,通过调节至少一个镜面(86)来改变照明场(24)的尺寸。
    • 7. 发明申请
    • MICROLITHOGRAPHIC APPARATUS AND METHOD OF CHANGING AN OPTICAL WAVEFRONT IN SUCH AN APPARATUS
    • 微电脑设备及其在这种设备中改变光波形的方法
    • WO2013156145A1
    • 2013-10-24
    • PCT/EP2013/001122
    • 2013-04-16
    • CARL ZEISS SMT GMBH
    • GORKHOVER, Leonid
    • G03F7/20
    • G03F7/706G03F7/70266G03F7/70883G03F7/70891
    • A microlithographic apparatus (10) comprises an optical wavefront manipulator (42). The latter includes an optical element (44) and a gas-tight cavity (50) that is partly confined by the optical element (44) or contains it. A gas inlet device (58) directs a gas jet (86a, 86b) towards the optical element (44). The location, where the gas jet impinges on the optical element after it has passed through the cavity, is variable in response to a control signal supplied by a control unit (84). A gas outlet (64, 66) is in fluid connection with the vacuum pump (60, 62) so that, upon operation of the vacuum pump, the pressure within the cavity is less than 10 mbar even if the gas jet (86a, 86b) passes through the cavity (50).
    • 微光刻设备(10)包括光波前机械手(42)。 后者包括被光学元件(44)局部限制或包含光学元件(44)的光学元件(44)和气密腔(50)。 气体入口装置(58)将气体射流(86a,86b)引向光学元件(44)。 气体射流在光学元件通过腔体之后入射的位置可响应于由控制单元(84)提供的控制信号而变化。 气体出口(64,66)与真空泵(60,62)流体连接,使得在真空泵操作时,腔内的压力小于10毫巴,即使气体射流(86a,86b )通过空腔(50)。
    • 10. 发明申请
    • ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置的照明系统
    • WO2012100791A1
    • 2012-08-02
    • PCT/EP2011/000416
    • 2011-01-29
    • CARL ZEISS SMT GMBHDEGÜNTER, Markus
    • DEGÜNTER, Markus
    • G03F7/20
    • G03F7/70116G03F7/70075G03F7/70083G03F7/70191
    • An illumination system of a microlithographic projection exposure apparatus (10) comprises an optical integrator (60) having a plurality of light entrance facets (100) and a beam deflection array (38) of reflective or transparent beam defleeting elements (40). Each beam deflecting element (40) is configured to illuminate a spot (98) on the optical integrator (609 at a position that is variable by changing a deflection angle produced by the beam deflecting element (40). The illumination system further comprises a control unit (90) which is configured to control the beam deflection elements (40) in such a manner that a light pattern (108, 114, 118) assembled from the spots (98) on at least one of the light entrance facets (100) is varied in response to an input command that a field dependency of the angular irradiance distribution in a mask plane (88) shall be modified.
    • 微光刻投影曝光装置(10)的照明系统包括具有多个光入射面(100)的光学积分器(60)和反射或透明光束去偏移元件(40)的光束偏转阵列(38)。 每个光束偏转元件(40)被配置为照亮光学积分器(609)上的点(98),该位置在通过改变由光束偏转元件(40)产生的偏转角度而可变的位置处,照明系统还包括控制 单元(90),其被配置为以这样的方式控制光束偏转元件(40),使得从光入射面(100)中的至少一个上的光斑(98)组装的光图案(108,114,118) 响应于输入命令改变掩模平面(88)中的角度辐照度分布的场依赖性。