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81. 发明申请

WO2007112925A1 THZ-ANTENNEN-ARRAY, SYSTEM UND VERFAHREN ZUR HERSTELLUNG EINES THZ-ANTENNEN-ARRAYS 审中-公开
标题翻译： TMC天线阵列，系统和方法用于生产TMC天线阵列
公开(公告)号：WO2007112925A1
公开(公告)日：2007-10-11
申请号：PCT/EP2007/002790
申请日：2007-03-29
申请人： RWTH AACHEN UNIVERSITY , NAGEL, Michael
发明人： NAGEL, Michael
IPC分类号： G01N21/35 , H01L49/00 , H01Q9/00
CPC分类号： H01Q9/005 , Y10T29/49016
摘要： Die Erfindung betrifft ein THz-Antennen-Array (20, 30, 40, 50) mit einer Anzahl von THz-Antennen (29, 39, 49, 49', 49''), wobei eine THz-Antenne (29, 39, 49, 49', 49'') einen photoleitenden Bereich (22, 32, 42) und eine erste Elektrode (21A, 21B, 31A, 31B, 41A, 41B) und eine zweite Elektrode (21B, 31B) aufweist, die über einen Abstandsbereich (24, 34, 44) beabstandet angeordnet sind, der sich lateral über wenigstens einen Teil des photoleitenden Bereiches (22, 32, 42) erstreckt. Um eine derartige Struktur zu vereinfachen und ebenso vereinfacht herzustellen, sieht die Erfindung vor, dass ein lateraler Bereich (25, 35, 45) zwischen benachbarten THz-Antennen (29, 39, 49, 49', 49'') des Arrays (20, 30, 40) nicht photoleitend ausgebildet ist, insbesondere frei von photoleitendem Material ist.
摘要翻译：本发明涉及一种太赫兹天线阵列（20，30，40，50）具有多个太赫兹天线（29，39，49，49 '49' '），其特征在于，一个太赫兹天线（29，39， 49，49 '49' '）具有光电导区（22，32，42）和第一电极（21A，21B，31A，31B，41A，41B）和第二电极（21B，31B），在间隔区（24，34，44）被布置隔开横向穿过光电导区（22，32，42）的至少一部分延伸。为了简化这样的结构和制造也得到简化，本发明提供了相邻的THz天线之间的横向区域（25，35，45）（29，39，49，49“ 49' ”）的阵列（20 ，30，40）不形成光导，特别是自由光导材料的。

82. 发明申请

WO2007056533A1 METALLIC QUANTUM DOTS FABRICATED BY A SUPERLATTICE STRUCTURE 审中-公开
标题翻译：金属量子力学由超声波结构组成
公开(公告)号：WO2007056533A1
公开(公告)日：2007-05-18
申请号：PCT/US2006/043681
申请日：2006-11-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , TONG, William M, , ISLAM, M Saiful,
发明人： TONG, William M, , ISLAM, M Saiful,
IPC分类号： H01L49/00 , G01N21/65
CPC分类号： H01L49/006 , B82Y10/00 , G01N21/658 , Y10S977/888 , Y10S977/893
摘要： A method for forming quantum dots (11 ) includes forming a superlattice structure (18) that includes at least one nanostrip (40, 42) protruding from the superlattice structure, providing a quantum dot substrate (14), transferring the at least one nanostrip to the quantum dot substrate, and removing at least a portion of the at least one nanostrip from the substrate. The superlattice structure is formed by providing a superlattice substrate (32), forming alternating layers of first and second materials (20, 24) on the substrate to form a stack, cleaving the stack to expose the alternating layers, and etching the exposed alternating layers with an etchant that etches the second material at a greater rate than the first to form the at least one nanostrip.
摘要翻译：一种用于形成量子点（11）的方法包括形成超晶格结构（18），其包括从超晶格结构突出的至少一个纳米线（40,42），提供量子点衬底（14），将所述至少一个纳米片转移到所述量子点衬底，以及从所述衬底去除所述至少一个纳米线的至少一部分。超晶格结构通过提供超晶格衬底（32）形成，在衬底上形成第一和第二材料（20,24）的交替层以形成堆叠，切割堆叠以暴露交替层，以及蚀刻暴露的交替层其中蚀刻剂以比第一材料更高的速率蚀刻第二材料以形成至少一个纳米线。

83. 发明申请

WO2006047975A8 COHERENT TERAHERTZ RADIATION SOURCE 审中-公开
标题翻译：相干TERAHERTZ辐射源
公开(公告)号：WO2006047975A8
公开(公告)日：2006-08-10
申请号：PCT/DE2005001578
申请日：2005-09-09
申请人： ROSSENDORF FORSCHZENT , DEKORSY THOMAS , HELM MANFRED , DREYHAUPT ANDRE , WINNERL STEPHAN
发明人： DEKORSY THOMAS , HELM MANFRED , DREYHAUPT ANDRE , WINNERL STEPHAN
IPC分类号： H01L49/00 , G01N21/35
CPC分类号： H01S1/02 , G01N21/3581 , H01L49/00 , H01S2302/02
摘要： The aim of the invention is to create a coherent THz radiation source in the frequency range between 10 GHz and 50 THz, said radiation source being suitable for areas exceeding 100 ?m2, while the electric field in the semiconductor substrate of the THz radiation source can be provided with values of more than 10 kV/cm and can operate the radiation source at voltages of less than 100 V. Said aim is achieved by two metal contacts (2) that are periodically arranged on a semiconductor substrate (1) as well as an additional periodic structure (4) which allows the semiconductor substrate to be optically excited only in the areas in which the electric field applied via the metal contacts runs in the same direction.
摘要翻译：本发明的目的是实现在10GHz和50THz之间的频率范围内的相干THz辐射源。其目的是为超过100的区域的技术方案.mu.m.sup.2是合适的可以具有厘米，在THz辐射的源值的所述半导体基板中的电场大于10千伏/并用电压为所述辐射源的操作管理小于100伏。本发明包括两个在半导体衬底（1）上周期性地排列的金属触点（2）和附加的周期性结构（4），它允许所述半导体基板的光激发仅在其中施加在上电场的金属触点的区域具有相同的方向，

84. 发明申请

WO2005109520A2 ELECTROMECHANICAL ELECTRON TRANSFER DEVICES 审中-公开
标题翻译：电子电子传输器件
公开(公告)号：WO2005109520A2
公开(公告)日：2005-11-17
申请号：PCT/US2005006921
申请日：2005-03-04
申请人： WISCONSIN ALUMNI RES FOUND , SCHEIBLE DOMINIK V , BLICK ROBERT H
发明人： SCHEIBLE DOMINIK V , BLICK ROBERT H
IPC分类号： H01L29/76 , H01L49/00 , H03H9/02 , H03H9/24
CPC分类号： H01L49/00 , B82Y10/00 , H01L29/7613 , H03H9/02259 , H03H9/2405 , H03H2009/02267 , H03H2009/02314 , H03H2009/02496
摘要： An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.
摘要翻译：电子转移装置以容易实现数百MHz以上的电荷转移周期频率并且可以通过常规半导体集成电路制造工艺形成的结构来实现。该装置包括具有水平范围的基底和在基底上相对于基底的水平范围从基底垂直延伸的柱。柱形成为相对于柱的垂直长度在可以为几百MHz的共振频率下横向振动。漏极和源电极相对于衬底的水平范围垂直地从衬底延伸，并且在柱的相对侧上具有最内端。支柱可自由地在漏极和源电极的最内端之间来回地振动，以在电极之间传递电荷。

85. 发明申请

WO2005004245A3 PHOTOLUMINESCENT INFRARED SOURCE 审中-公开
标题翻译：光致发光红外光源
公开(公告)号：WO2005004245A3
公开(公告)日：2005-06-02
申请号：PCT/GB2004002709
申请日：2004-06-24
申请人： UNIV HERIOT WATT , TAGHIZADEH MOHAMMED REZA , CROWDER JOHN GRAHAM , ELLIOT CHARLES THOMAS
发明人： TAGHIZADEH MOHAMMED REZA , ELLIOT CHARLES THOMAS
IPC分类号： G02F2/02 , H01L33/00 , H01L49/00 , H01S5/00 , H01S5/04 , H01S5/40 , H01S5/42 , H01S5/183
CPC分类号： H01S5/423 , G02F2/02 , H01S5/041 , H01S5/18388 , H01S5/4087
摘要： A photoluminescent radiation source, particularly for generating infrared radiation. The source is made from a layer of semiconducting material which, when optically pumped, emits radiation in a desired wavelength range, and an output array of micro-lenses attached to an output surface of the semiconducting layer. The output surface of the semiconducting layer is optically immersed by the output array of microlenses. In the preferred embodiment a further, input microlens array is attached to an input surface of the semiconducting layer to focus pump laser irradiation on to the semiconducting layer. The source has many applications, for example in gas sensing, active thermal imaging and infrared spectrometry.
摘要翻译：一种光致发光辐射源，特别是用于产生红外辐射。该源由一层半导体材料制成，当被光学泵浦时，发射所需波长范围的辐射，以及附着到半导体层的输出表面的微透镜的输出阵列。半导体层的输出表面被微透镜的输出阵列光学浸没。在优选实施例中，另外的输入微透镜阵列附着到半导体层的输入表面，以将泵激光照射聚焦到半导体层上。该来源有许多应用，例如气体传感，主动热成像和红外光谱。

86. 发明申请

WO2004099107A3 DNA-BASED MEMORY DEVICE AND METHOD OF READING AND WRITING SAME 审中-公开
标题翻译：基于DNA的存储器件及其读取和写入方法
公开(公告)号：WO2004099107A3
公开(公告)日：2005-04-14
申请号：PCT/US2004001683
申请日：2004-01-22
申请人： UNIV CLEMSON , BOLAND THOMAS , WAGNER THOMAS
发明人： BOLAND THOMAS , WAGNER THOMAS
IPC分类号： G01Q60/00 , C12Q1/68 , G06N3/12 , G11C11/54 , G11C13/02 , H01L27/10 , H01L35/24 , H01L49/00 , H01L51/30
CPC分类号： G06N3/123 , B82Y10/00 , G11C13/0014 , G11C13/0019 , H01L51/0093 , H01L51/0595 , Y10S977/946
摘要： The present invention is directed to a memory device (120) having very high storage density capability. In general, the memory device (120) includes an array of individual memory cells (114) which store information that is assigned a value based on the molecular contents of the memory cell. In a preferred embodiment, the molecules utilized for storing information in the memory cells may be single-strand polynucleotides, for instance single-strand oligonucleotides (112) of between about 5 and about 20 monomer units. The present invention is also directed to methods and systems useful for writing and reading the molecular-based memory devices. In particular, the devices may be written and read via modified atomic force microscopy processes.
摘要翻译：本发明涉及具有非常高的存储密度能力的存储器件（120）。通常，存储器件（120）包括存储基于存储器单元的分子内容分配值的信息的单独存储器单元（114）的阵列。在优选的实施方案中，用于将信息存储在记忆细胞中的分子可以是单链多核苷酸，例如约5至约20个单体单元的单链寡核苷酸（112）。本发明还涉及用于写入和读取基于分子的存储器件的方法和系统。特别地，可以通过经修改的原子力显微镜方法书写和读取装置。

87. 发明申请

WO2004061859A3 STOCHASTIC ASSEMBLY OF SUBLITHOGRAPHIC NANOSCALE INTERFACES 审中-公开
标题翻译：分层纳米结构界面的组装
公开(公告)号：WO2004061859A3
公开(公告)日：2005-02-03
申请号：PCT/US0323198
申请日：2003-07-24
申请人： CALIFORNIA INST OF TECHN , HARVARD COLLEGE , STANFORD RES INST INT , UNIV BROWN , DEHON ANDRE , LIEBER CHARLES M , LINCOLN PATRICK D , SAVAGE JOHN
发明人： DEHON ANDRE , LIEBER CHARLES M , LINCOLN PATRICK D , SAVAGE JOHN
IPC分类号： G11C13/00 , G11C8/10 , G11C13/02 , H01L21/3205 , H01L23/52 , H01L23/522 , H01L27/10 , H01L29/06 , H01L49/00
CPC分类号： H01L49/00 , B82Y10/00 , G11C8/10 , G11C13/0023 , G11C13/02 , G11C13/025 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H01L23/522 , H01L27/101 , H01L29/0665 , H01L29/0673 , H01L2924/0002 , Y10S977/762 , Y10S977/943 , H01L2924/00
摘要： A method for controlling electric conduction on nanoscale wires is disclosed.The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types.For example, a first type of controllable region can exhibit a different dopingfrom a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independentlyselected.
摘要翻译：公开了一种用于控制纳米尺寸导线上的导电的方法。纳米尺寸线材设有轴向和/或径向分布的可控区域。通过微细线或额外的纳米线控制这些区域可以允许或防止受控纳米尺寸导线上的电导。可控区域具有两种不同类型。例如，第一类型的可控区域可以表现出与第二类型可控区域不同的掺杂。该方法允许独立地选择以亚光刻间距包装的一组纳米级线。

88. 发明申请

WO03017388A9 METHOD AND DEVICE FOR SELECTIVELY EMITTING PHOTONS 审中-公开
标题翻译：用于选择性发光的方法和装置
公开(公告)号：WO03017388A9
公开(公告)日：2004-04-01
申请号：PCT/US0225917
申请日：2002-08-14
申请人： DRAPER LAB CHARLES S
发明人： MEULENBERG ANDREW
IPC分类号： H01L33/00 , H01L31/04 , H01L49/00
CPC分类号： H01L33/0004
摘要： A selective emitter for a thermophotovoltaic system includes a heat source and a semiconductor layer having a thickness less than about 10 microns in thermal communication with the heat source. The heat source provides thermal energy to the semiconductor layer, which emits photons having a selected wavelength that is suitable for conversion into electrical energy by a thermophotovoltaic converter, in response to receiving thermal energy.
摘要翻译：用于热光伏系统的选择性发射器包括热源和与热源热连通的厚度小于约10微米的半导体层。热源向半导体层提供热能，该半导体层响应于接收热能而发射具有选择的波长的光子，其适于由热光伏转换器转换成电能。

89. 发明申请

WO03017388A2 METHOD AND DEVICE FOR SELECTIVELY EMITTING PHOTONS 审中-公开
标题翻译：用于选择性发光的方法和装置
公开(公告)号：WO03017388A2
公开(公告)日：2003-02-27
申请号：PCT/US0225917
申请日：2002-08-14
申请人： DRAPER LAB CHARLES S
发明人： MEULENBERG ANDREW
IPC分类号： H01L33/00 , H01L49/00
CPC分类号： H01L33/0004
摘要： A selective emitter for a thermophotovoltaic system includes a heat source and a semiconductor layer having a thickness less than about 10 microns in thermal communication with the heat source. The heat source provides thermal energy to the semiconductor layer, which emits photons having a selected wavelength that is suitable for conversion into electrical energy by a thermophotovoltaic converter, in response to receiving thermal energy.
摘要翻译：用于热光伏系统的选择性发射器包括热源和与热源热连通的厚度小于约10微米的半导体层。热源向半导体层提供热能，该半导体层响应于接收热能而发射具有选择的波长的光子，其适于由热光伏转换器转换成电能。

90. 发明申请

WO01003208A1 NANOSCOPIC WIRE-BASED DEVICES, ARRAYS, AND METHODS OF THEIR MANUFACTURE 审中-公开
标题翻译：基于纳米线的器件，阵列及其制造方法
公开(公告)号：WO01003208A1
公开(公告)日：2001-01-11
申请号：PCT/US2000/018138
申请日：2000-06-30
IPC分类号： B82B1/00 , B82B3/00 , G11C13/02 , G11C23/00 , H01H59/00 , H01L27/10 , H01L27/24 , H01L29/06 , H01L29/66 , H01L49/00 , H01L51/00 , H01L51/30 , H01L45/00 , G11C11/21
CPC分类号： G11C23/00 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , G11C13/025 , G11C2213/16 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/285 , H01L51/0048 , H01L51/0052 , H01L51/0595 , Y10S977/75 , Y10S977/762 , Y10S977/843 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
摘要翻译：描述由纳米线组成的电气装置及其制造和使用的方法。纳米线可以是纳米管，优选单壁碳纳米管。它们可以使用化学图案化的表面，通过化学气相沉积方向布置在横杆阵列中。化学气相沉积也可以用于在引导电场的情况下在阵列中形成纳米管，任选地与自组装单层图案组合。描述双稳态设备。

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