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    • 1. 发明申请
    • SEMICONDUCTOR DEVICE GENERATING OR DETECTING TERAHERTZ WAVES
    • 生成或检测TERAHERTZ波形的半导体器件
    • WO2016203712A1
    • 2016-12-22
    • PCT/JP2016/002497
    • 2016-05-23
    • CANON KABUSHIKI KAISHA
    • KOYAMA, Yasushi
    • H03B7/08H03B7/14H01S5/10H01Q9/00
    • H03B7/08H01Q9/0442H01Q9/045H01S5/0425H01S2302/02H03B7/14H03B2200/0084
    • A semiconductor device that generates or detects terahertz waves includes a semiconductor layer that has a gain of the generated or detected terahertz waves; a first electrode connected to the semiconductor layer; a second electrode that is arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and that is electrically connected to the semiconductor layer; a third electrode electrically connected to the second electrode; and a dielectric layer that is arranged around the semiconductor layer and the second electrode and between the first electrode and the third electrode and that is thicker than the semiconductor layer. The dielectric layer includes an area including a conductor electrically connecting the second electrode to the third electrode. The area is filled with the conductor.
    • 产生或检测太赫兹波的半导体器件包括具有产生或检测到的太赫兹波的增益的半导体层; 连接到所述半导体层的第一电极; 第二电极,其布置在与所述第一电极相对于所述半导体层布置的侧面相对的一侧,并且电连接到所述半导体层; 电连接到第二电极的第三电极; 以及布置在半导体层和第二电极周围以及第一电极和第三电极之间并且比半导体层厚的电介质层。 电介质层包括包括将第二电极与第三电极电连接的导体的区域。 该地区充满了导体。
    • 2. 发明申请
    • SYSTÈME D'ÉMISSION LASER BI FRÉQUENCE
    • 双频激光发射系统
    • WO2016087124A1
    • 2016-06-09
    • PCT/EP2015/074634
    • 2015-10-23
    • CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    • PIQUE, Jean-Paul
    • H01S3/08H01S3/23H01S3/094H01S3/081H01S3/11H01S3/106H01S3/16H01S3/22
    • H01S3/0809H01S3/0816H01S3/094H01S3/1061H01S3/1068H01S3/1106H01S3/1611H01S3/1625H01S3/1636H01S3/2215H01S3/2366H01S3/2375H01S2302/02
    • L'invention concerne un système d'émission laser bi-fréquence 20 comprenant : un laser dit principal comprenant un milieu amplificateur (AM) disposé dans une cavité C, apte à laser par pompage dans ladite cavité et selon un gain initial G ini (v) fonction d'une fréquence optique, un dispositif de sélection spectrale D ss comprenant : *un milieu moléculaire ou monoatomique M en phase gazeuse disposé dans ladite cavité laser, et *un laser dit d'excitation L ex présentant un longueur d'onde d'excitation Landa ex configurée pour exciter, par absorption optique, un niveau énergétique d'excitation N ex dudit milieu, *ledit milieu étant configuré pour émettre, par désexcitation radiative dudit niveau énergétique d'excitation vers un premier N 1 et un deuxième N 2 niveaux énergétiques de plus base énergie, au moins un doublet de fréquence comprenant une première fréquence V1 associée audit premier niveau N 1 et une deuxième fréquence V2 associée audit deuxième niveau N 2 , le laser d'excitation étant configuré pour que la transition entre un niveau fondamental dudit milieu et ledit niveau énergétique d'excitation soit saturée, et la densité moléculaire ou atomique étant suffisamment élevée, de sorte que ledit gain laser initial G ini (V) soit modifié en un gain laser sélectif G sel(V) par augmentation locale dudit gain laser initial auxdites fréquences V1, V2 dudit doublet.
    • 本发明涉及一种双频激光发射系统20,包括:称为主激光器的激光器,包括放置在空腔C中的增益介质(AM),能够通过泵浦所述空腔并以初始增益Gini(v ),其为光频率的函数; 以及光谱选择装置Dss,其包括:放置在所述激光腔中的气相单原子或分子介质M; 并且激光Lex称为具有激发波长Landaex的激发激光器,其经配置以通过光学吸收激发所述介质的激发能级Nex,所述介质被配置为通过将所述激发能级的辐射松弛发射到第一和第二能量 低能量的N1和N2级,包括与所述第一电平N1相关联的第一频率V1和与所述第二电平N2相关联的第二频率V2的至少一个频率双频,激励激光器被配置为使得激发激光器的基本电平 所述介质和所述激发能级饱和,并且原子或分子密度足够高,使得所述初始激光增益Gini(v)通过在所述频率处的所述初始激光增益的局部增加而被修改为选择性激光增益Gsel(v) V1,V2。
    • 3. 发明申请
    • SYSTEMS, METHODS, AND DEVICES FOR HANDLING TERAHERTZ RADIATION
    • 用于处理TERAHERTZ辐射的系统,方法和装置
    • WO2008147575A2
    • 2008-12-04
    • PCT/US2008/050926
    • 2008-01-11
    • RENSSELAER POLYTECHNIC INSTITUTESCHULKIN, BrianZHANG, Xi-ChengTONGUE, ThomasXU, JingzhouCHEN, Jian
    • SCHULKIN, BrianZHANG, Xi-ChengTONGUE, ThomasXU, JingzhouCHEN, Jian
    • G01J4/00
    • G21K5/00B33Y80/00G01J4/00G01N21/211G01N21/3581H01S5/02236H01S2302/02
    • Methods and apparatus (10, 20, 25, 60, 70) for detecting variations in electromagnetic fields, in particular, terahertz (THz) electromagnetic fields, are provided. The methods and apparatus employ polarization detection devices (120) and controllers (224) to maintain or vary the polarization of modulated signals (212, 262) as desired. The methods and apparatus are provided to characterize electromagnetic fields by directing the electromagnetic field (204, 254) and a probe beam (206, 252) upon an electro-crystal (202, 256) and detecting the modulation of the resulting probe beam (212, 262). Detection of the modulation of the probe beam (212, 262) is practiced by detecting and comparing the polarization components (216, 218, 266, 268) of the modulated probe beam (212, 262). Aspects of the invention may be used to analyze or detect explosives, explosive related compounds, and pharmaceuticals, among other substances. A compact apparatus (10), modular optical devices (20, 25, 60, 70) for use with the apparatus, sample holders (400, 402, 500), and radiation source mounts (600, 650, 700) are also disclosed.
    • 提供了用于检测电磁场特别是太赫兹(THz)电磁场的变化的方法和装置(10,20,25,60,70)。 所述方法和装置使用偏振检测装置(120)和控制器(224)来根据需要维持或改变调制信号(212,262)的极化。 提供的方法和装置通过将电磁场(204,254)和探针光束(206,252)引导到电晶体(202,256)上并检测所得到的探针光束(212)的调制来表征电磁场 ,262)。 通过检测和比较调制探测光束(212,262)的偏振分量(216,218,266,268)来实现探测光束(212,262)的调制的检测。 本发明的方面可用于分析或检测爆炸物,爆炸性相关化合物和药物等物质。 还公开了一种紧凑装置(10),用于与装置一起使用的模块化光学装置(20,25,60,70),样品保持器(400,402,500)和辐射源安装件(600,650,700)。
    • 5. 发明申请
    • TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS
    • 基于半导体耦合量子阱的TERAHERTZ辐射器件
    • WO2006077566A3
    • 2006-08-24
    • PCT/IL2005000073
    • 2005-01-20
    • YISSUM RES DEV COLAIKHTMAN BORISSHVARTSMAN LEONID
    • LAIKHTMAN BORISSHVARTSMAN LEONID
    • H01L33/06H01S5/34
    • H01S1/02B82Y20/00H01L33/06H01S5/34H01S5/3419H01S5/3422H01S2302/02
    • A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first (12) and second (13) semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.
    • 提供了一种其制造的半导体器件及其制造方法,以使器件在THz光谱范围内工作。 该器件包括至少包括第一(12)和第二(13)半导体层的异质结构。 第一层和第二层由在第一层中的电子量子阱(EQW)和第二层中的空穴量子阱(HQW)之间提供量子力学耦合的材料制成,并且提供材料的价带之间的重叠 以及第一层材料的导带。 选择层的布局,以便在第一层的导带和第二层的价带中提供能量子带的预定色散。 跨越第一层和第二层的外部偏置场的应用引起来自非平衡载流子的辐射跃迁的THz辐射在以下至少一个之间:EQW的相邻能量子带,HQW的相邻能量子带和地面能量 EQW和HQW的子带。
    • 6. 发明申请
    • TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS
    • 基于半导体耦合量子阱的TERAHERTZ辐射器件
    • WO2006077566A2
    • 2006-07-27
    • PCT/IL2005/000073
    • 2005-01-20
    • YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEMLAIKHTMAN, BorisSHVARTSMAN, Leonid
    • LAIKHTMAN, BorisSHVARTSMAN, Leonid
    • H01L33/00H01S5/34
    • H01S1/02B82Y20/00H01L33/06H01S5/34H01S5/3419H01S5/3422H01S2302/02
    • A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.
    • 提供了一种其制造的半导体器件及其制造方法,以使器件在THz光谱范围内工作。 该器件包括至少包括第一和第二半导体层的异质结构。 第一层和第二层由在第一层中的电子量子阱(EQW)和第二层中的空穴量子阱(HQW)之间提供量子力学耦合的材料制成,并且提供材料的价带之间的重叠 以及第一层材料的导带。 选择层的布局,以便在第一层的导带和第二层的价带中提供能量子带的预定色散。 跨越第一层和第二层的外部偏置场的应用引起来自非平衡载流子的辐射跃迁的THz辐射在以下至少一个之间:EQW的相邻能量子带,HQW的相邻能量子带和地面能量 EQW和HQW的子带。
    • 8. 发明申请
    • MULTI-SPECTRAL TERAHERTZ SOURCE AND IMAGING SYSTEM
    • 多光谱TERAHERTZ源和成像系统
    • WO2013148368A1
    • 2013-10-03
    • PCT/US2013/032611
    • 2013-03-15
    • LONGWAVE PHOTONICS LLC
    • LEE, Alan, Wei, Min
    • H01S1/00H01S3/10
    • H01S5/4012B82Y20/00G01N21/3581H01S5/0071H01S5/02423H01S5/12H01S5/3402H01S5/4087H01S2302/02
    • A broadly tunable semiconductor laser source having at least two semiconductor lasers, composed of dissimilar gain media, positioned in close proximity to one another, with an optical element for collimating the output of the semiconductor lasers, and a dispersive element to overlap the collimated beams with a microelectronic controller, which switches each laser on and off and sets the bias conditions for each laser. The output beams can be made parallel by design of the grating dispersion in combination with the lens, with small aiming corrections provided by mechanical actuation of the grating. The tunable source can be used for spectroscopy and spectroscopic imaging over a broad frequency range where the gain media are chosen for emission at frequencies of interest.
    • 一种具有至少两个半导体激光器的广泛可调谐的半导体激光源,它们由彼此非常靠近的相异增益介质组成,具有用于准直半导体激光器的输出的光学元件和用于准直半导体激光器的输出的色散元件, 微电子控制器,其每个激光器的接通和断开,并设置每个激光器的偏置条件。 输出光束可以通过与透镜结合的光栅色散的设计而平行,通过光栅的机械致动提供小的瞄准校正。 可调谐源可以在宽频率范围内用于光谱和光谱成像,其中增益介质被选择用于在感兴趣的频率处发射。