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    • 64. 发明申请
    • IONIZING RADIATION SENSOR
    • 电离辐射传感器
    • WO2015026262A1
    • 2015-02-26
    • PCT/RU2014/000527
    • 2014-07-18
    • OTKRYTOE AKTSIONERNOE OBSCHESTVO "INTERSOFT EVRAZIYA"
    • ELIN, Vladimir AleksandrovichMERKIN, Mikhail Moiseevich
    • H01L31/0352G01T1/18
    • G01T1/24H01L29/0619H01L31/0224H01L31/022408H01L31/022416H01L31/028H01L31/0352H01L31/075H01L31/105H01L31/115H01L31/117H01L31/1175
    • The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor (sensing element) is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate (1) of n-type conductivity, on whose front (working) side there are p-regions (2, 3); layer (4) (coat) from SiO 2 ; aluminum metallization (5); and a passivating (protective) layer (6). P-region (2), located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions (3) in the form of circular elements (guard rings) are located in the inactive region on the perimeter of the substrate around the central p-region (2) and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter. In layer (4) of SiO 2 , there are windows (7) to ensure the contact between the metal (aluminum metallization) and the p-region; in the passivating layer over the p-region, located in the central part of the substrate, there are window (8) for contacting with the p-n region in the process of testing and windows (9) for connection of the leads. On the substrate side opposite to the front surface, there is n-region layer (10) and metal layer (11).
    • 本发明涉及用于将电离辐射转换为电信号的半导体器件,该电信号能够确定所测量的伽玛,质子,电子和α辐射的辐射水平和吸收剂量。 电离辐射传感器(传感元件)是由平面技术制造的p-i-n结构。 该传感器包含n型导电的高电阻硅衬底(1),其前(工作)侧具有p区(2,3); 来自SiO 2的层(4)(涂层); 铝金属化(5); 和钝化(保护)层(6)。 位于基板中心部分并占据最大表面积的P区(2)形成传感器的有源区。 圆形元件(保护环)形式的至少两个p区(3)位于中央p区(2)周围衬底周边上的非活性区中,并确保表面电流值的减小和 从有源区到器件周边的平稳电压降。 在SiO 2层(4)中,存在窗口(7)以确保金属(铝金属化)与p区之间的接触; 在位于衬底中心部分的p区上方的钝化层中,在测试过程中有用于与p-n区接触的窗口(8),以及用于连接引线的窗口(9)。 在与前表面相对的衬底侧,存在n区域层(10)和金属层(11)。
    • 66. 发明申请
    • LATERAL SINGLE-PHOTON AVALANCHE DIODE AND THEIR MANUFACTURING METHOD
    • 侧向单光子二极管及其制造方法
    • WO2014140000A3
    • 2014-12-04
    • PCT/EP2014054684
    • 2014-03-11
    • AMS AG
    • TEVA JORDIROGER FREDERICSTÜCKLER EWALDJESSENIG STEFANMINIXHOFER RAINERWACHMANN EWALDSCHREMS MARTINKOPPITSCH GÜNTHER
    • H01L31/107H01L31/0224H01L31/0352
    • H01L31/107H01L31/022408H01L31/03529H01L31/03682H01L31/182Y02E10/50
    • The lateral single-photon avalanche diode comprises a semiconductor body (1, 2) comprising a semiconductor material of a first type of electric conductivity, a trench (3) in the semiconductor body, and anode and cathode terminals (25, 26). A junction region (14) of the first type of electric conductivity is located near the sidewall (38) of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer (4) of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region (14) may be formed by a sidewall implantation. A counterdoped region (29) of the first type of electric conductivity is arranged between the semiconductor layer (4) of the second type of electric conductivity and the surface (2') in order to avoid a breakdown in this area.
    • 横向单光子雪崩二极管包括半导体本体(1,2),其包括第一导电类型的半导体材料,半导体本体中的沟槽(3)以及阳极和阴极端子(25,26)。 第一类型导电性的结区域(14)位于沟槽的侧壁(38)附近,并且在结区域中的电导率高于距离侧壁更远的距离。 具有相反的第二导电类型的半导体层(4)布置在与结区相邻的沟槽的侧壁处。 阳极和阴极端子分别与半导体层和结区域电连接。 接合区域(14)可以通过侧壁注入形成。 为了避免该区域的破坏,在第二导电类型的半导体层(4)与表面(2')之间布置有第一导电类型的反向掺杂区域(29)。