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1. 发明申请

WO2015026262A1 IONIZING RADIATION SENSOR 审中-公开
标题翻译：电离辐射传感器
公开(公告)号：WO2015026262A1
公开(公告)日：2015-02-26
申请号：PCT/RU2014/000527
申请日：2014-07-18
申请人： OTKRYTOE AKTSIONERNOE OBSCHESTVO "INTERSOFT EVRAZIYA"
发明人： ELIN, Vladimir Aleksandrovich , MERKIN, Mikhail Moiseevich
IPC分类号： H01L31/0352 , G01T1/18
CPC分类号： G01T1/24 , H01L29/0619 , H01L31/0224 , H01L31/022408 , H01L31/022416 , H01L31/028 , H01L31/0352 , H01L31/075 , H01L31/105 , H01L31/115 , H01L31/117 , H01L31/1175
摘要： The invention relates to semiconductor devices for conversion of the ionizing radiation into an electrical signal enabling determination of the radiation level and absorbed dose of gamma, proton, electronic and alpha radiations being measured. The ionizing radiation sensor (sensing element) is a p-i-n structure fabricated by the planar technology. The sensor contains a high-resistance silicon substrate (1) of n-type conductivity, on whose front (working) side there are p-regions (2, 3); layer (4) (coat) from SiO 2 ; aluminum metallization (5); and a passivating (protective) layer (6). P-region (2), located in the central part of the substrate and occupying the most surface area, forms the active region of the sensor. At least two p-regions (3) in the form of circular elements (guard rings) are located in the inactive region on the perimeter of the substrate around the central p-region (2) and ensure a decrease in the surface current value and smooth voltage drop from the active region to the device perimeter. In layer (4) of SiO 2 , there are windows (7) to ensure the contact between the metal (aluminum metallization) and the p-region; in the passivating layer over the p-region, located in the central part of the substrate, there are window (8) for contacting with the p-n region in the process of testing and windows (9) for connection of the leads. On the substrate side opposite to the front surface, there is n-region layer (10) and metal layer (11).
摘要翻译：本发明涉及用于将电离辐射转换为电信号的半导体器件，该电信号能够确定所测量的伽玛，质子，电子和α辐射的辐射水平和吸收剂量。电离辐射传感器（传感元件）是由平面技术制造的p-i-n结构。该传感器包含n型导电的高电阻硅衬底（1），其前（工作）侧具有p区（2,3）; 来自SiO 2的层（4）（涂层）; 铝金属化（5）; 和钝化（保护）层（6）。位于基板中心部分并占据最大表面积的P区（2）形成传感器的有源区。圆形元件（保护环）形式的至少两个p区（3）位于中央p区（2）周围衬底周边上的非活性区中，并确保表面电流值的减小和从有源区到器件周边的平稳电压降。在SiO 2层（4）中，存在窗口（7）以确保金属（铝金属化）与p区之间的接触; 在位于衬底中心部分的p区上方的钝化层中，在测试过程中有用于与p-n区接触的窗口（8），以及用于连接引线的窗口（9）。在与前表面相对的衬底侧，存在n区域层（10）和金属层（11）。

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