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1. 发明申请

WO2014140000A3 LATERAL SINGLE-PHOTON AVALANCHE DIODE AND THEIR MANUFACTURING METHOD 审中-公开
标题翻译：侧向单光子二极管及其制造方法
公开(公告)号：WO2014140000A3
公开(公告)日：2014-12-04
申请号：PCT/EP2014054684
申请日：2014-03-11
申请人： AMS AG
发明人： TEVA JORDI , ROGER FREDERIC , STÜCKLER EWALD , JESSENIG STEFAN , MINIXHOFER RAINER , WACHMANN EWALD , SCHREMS MARTIN , KOPPITSCH GÜNTHER
IPC分类号： H01L31/107 , H01L31/0224 , H01L31/0352
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/03529 , H01L31/03682 , H01L31/182 , Y02E10/50
摘要： The lateral single-photon avalanche diode comprises a semiconductor body (1, 2) comprising a semiconductor material of a first type of electric conductivity, a trench (3) in the semiconductor body, and anode and cathode terminals (25, 26). A junction region (14) of the first type of electric conductivity is located near the sidewall (38) of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer (4) of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region (14) may be formed by a sidewall implantation. A counterdoped region (29) of the first type of electric conductivity is arranged between the semiconductor layer (4) of the second type of electric conductivity and the surface (2') in order to avoid a breakdown in this area.
摘要翻译：横向单光子雪崩二极管包括半导体本体（1,2），其包括第一导电类型的半导体材料，半导体本体中的沟槽（3）以及阳极和阴极端子（25,26）。第一类型导电性的结区域（14）位于沟槽的侧壁（38）附近，并且在结区域中的电导率高于距离侧壁更远的距离。具有相反的第二导电类型的半导体层（4）布置在与结区相邻的沟槽的侧壁处。阳极和阴极端子分别与半导体层和结区域电连接。接合区域（14）可以通过侧壁注入形成。为了避免该区域的破坏，在第二导电类型的半导体层（4）与表面（2'）之间布置有第一导电类型的反向掺杂区域（29）。

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