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61. 发明申请

WO02073753A2 MODE CONTROL USING TRANSVERSAL BANDGAP STRUCTURE IN VCSELS 审中-公开
标题翻译：利用VCSELS中的横向带结构进行模式控制
公开(公告)号：WO02073753A2
公开(公告)日：2002-09-19
申请号：PCT/DK0200146
申请日：2002-03-07
申请人： UNIV DANMARKS TEKNISKE , OESTERGAARD JOHN ERLAND , BIRKEDAL DAN
发明人： OESTERGAARD JOHN ERLAND , BIRKEDAL DAN
IPC分类号： H01S5/065 , G02B6/12 , H01S5/10 , H01S5/183 , H01S3/00
CPC分类号： H01S5/18355 , G02B2006/1213 , H01S5/105 , H01S5/18311 , H01S5/18313 , H01S5/18344 , H01S5/18369 , H01S5/18377 , H01S5/18386 , H01S5/18394 , H01S2301/166
摘要： A vertical cavity surface emitting laser (VCSEL) having a photonic band gap (PBG) region formed within or adjacent to a first and/or a second mirror, or within a spacer layer positioned between a gain region and at least one of the mirrors. The PBG region has a predetermined periodicity which substantially prevents the generated light from propagating the region, and defines a light aperture without the periodicity so as to allow the generated light to propagate through the aperture. The PBG region does not extend through the gain region, thereby allowing the full gain region to be used. Controls the efficiency of laser action by suppressing or preventing laser action in certain modes without losses, rather the modes are made forbidden. Energy from the forbidden modes is eventually coupled back to the allowed mode(s). Provides a separation of the confinement of the gain region and the mode control without introducing energy losses.
摘要翻译：一种垂直腔表面发射激光器（VCSEL），具有在第一和/或第二反射镜内或附近形成的光子带隙（PBG）区，或位于增益区和至少一个反射镜之间的间隔层内。 PBG区域具有预定的周期性，其基本上防止了所产生的光传播该区域，并且限定了没有周期性的光孔径，从而允许所产生的光通过孔隙传播。 PBG区域不延伸通过增益区域，从而允许使用全增益区域。通过在某些模式下抑制或防止激光作用而无损失地控制激光作用的效率，而禁止使用这些模式。来自禁止模式的能量最终耦合回允许的模式。在不引入能量损失的情况下提供增益区域和模式控制的分离。

62. 发明申请

WO02050968A1 SURFACE-EMITTING LASER, METHOD OF MANUFACTURE THEREOF, AND SURFACE-EMITTING LASER ARRAY 审中-公开
标题翻译：表面发射激光，其制造方法和表面发射激光阵列
公开(公告)号：WO02050968A1
公开(公告)日：2002-06-27
申请号：PCT/JP2000/008998
申请日：2000-12-19
IPC分类号： H01S5/183 , H01S5/20 , H01S5/42
CPC分类号： H01S5/18311 , H01S5/209
摘要： The invention provides a surface-emitting semiconductor laser with low device resistance, a method of manufacture thereof, and a surface-emitting semiconductor laser array. The laser device includes a p-type semiconductor substrate, on which are formed a lower reflector layer structure and an upper reflector layer structure. An etch stop layer, a current constriction layer, and an active layer are formed one over another between the reflector layer structures. The portion above the etch stop layer has the shape of a mesa.
摘要翻译：本发明提供具有低器件电阻的表面发射半导体激光器，其制造方法和表面发射半导体激光器阵列。激光装置包括p型半导体衬底，在其上形成下反射器层结构和上反射器层结构。在反射器层结构之间一个接一个地形成蚀刻停止层，电流收缩层和有源层。蚀刻停止层上方的部分具有台面的形状。

63. 发明申请

WO0195443A8 SINGLE MODE VERTICAL CAVITY SURFACE EMITTING LASER 审中-公开
标题翻译：单模垂直孔表面发射激光
公开(公告)号：WO0195443A8
公开(公告)日：2002-05-30
申请号：PCT/US0015373
申请日：2000-06-02
申请人： CIELO COMMUNICATIONS INC
发明人： WASSERBAUR JOHN G , SCOTT JEFFREY W
IPC分类号： H01L33/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/00 , H01L21/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18327 , H01S5/18333 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2063 , H01S2301/166 , H01S2301/173
摘要： A surface emitting laser with spatially varying optical loss to provide single mode operation. The optical loss may be introduced with an anti-phased ohmic contacts (4, 5). Current injection may be constricted to a diameter that is different than the diameter of the ohmic aperture (32), allowing for optimization of carrier profiles for high-speed performance. Methods for index guiding are introduced to further the reproducibility of the invention.
摘要翻译：具有空间变化的光损耗的表面发射激光器，以提供单模操作。光损耗可以用反相欧姆接触引入（4,5）。电流注入可能会缩小到与欧姆孔径（32）的直径不同的直径，从而可以优化用于高速性能的载体轮廓。引入引导引导方法以进一步提高本发明的再现性。

64. 发明申请

WO02013334A2 SURFACE-EMITTING LASER HAVING LATERAL CURRENT INJECTION 审中-公开
标题翻译：具有横向功率注入的表面发射激光器
公开(公告)号：WO02013334A2
公开(公告)日：2002-02-14
申请号：PCT/DE2001/002903
申请日：2001-07-31
IPC分类号： H01S5/042 , H01S5/183 , H01S5/20 , H01S5/22 , H01S
CPC分类号： H01S5/18338 , H01S5/0425 , H01S5/18311 , H01S5/18316 , H01S5/18333 , H01S5/18341 , H01S5/2059 , H01S2301/18
摘要： The invention relates to a surface-emitting laser (VCSEL) having lateral current injection. According to the invention, the pumping current (4) is guided from the decoupling side contact surface (2) in a first area (12) outside of the resonator volume in a manner that is predominantly parallel to the resonator axis and is conducted in a second area (13) in a manner that is predominantly perpendicular to the active volume (9). The invention also relates to a contact geometry, which effects an automatic regulation of the size of the active volume (9) according to the pumping current (4).
摘要翻译：本发明描述了具有横向电流注入的表面发射激光器（VCSEL）。这里，泵电流（4）从auskoppelseitigen接触表面传送（2）从外部谐振器容积主要平行于所述谐振器中的第一区域（12）和在第二区域（13）主要是垂直于有源体积（9）。此外，描述了接触几何形状，其导致作为泵浦电流（4）的函数的有效体积（9）的大小的独立调节。

65. 发明申请

WO01035504A3 HIGH-POWERED LASER ARRANGEMENT 审中-公开
标题翻译：安排用于高功率激光
公开(公告)号：WO01035504A3
公开(公告)日：2001-12-06
申请号：PCT/DE2000/003979
申请日：2000-11-07
IPC分类号： H01S5/022 , H01S5/40 , H01S5/42 , H01S5/50 , H01S5/10 , H01S5/183
CPC分类号： H01S5/50 , H01S3/07 , H01S5/142 , H01S5/18308 , H01S5/18311 , H01S5/18383 , H01S5/3095 , H01S5/4043 , H01S5/423 , H01S5/5027
摘要： The invention relates to an array (15), which serves as a hybrid laser resonator, or laser amplifier, in which electrically pumped semiconductor gain elements are optically connected in series and thermally and electrically connected in parallel. The laser radiation (14) is reflected from one gain element to the next by means of an external reflector (23) and internal rear-facing reflectors, then amplified in the active zone of the gain elements, which are suitable for radiation amplification and are electrically pumped via connectors (18). A high quality of radiation can thus be achieved, with a high output power.
摘要翻译：阵列（15）被串联连接在电泵浦半导体增益元件光学地串联和并联热连接和电连接，作为混合激光谐振器或激光放大器。激光辐射（14）由一个外部反射器（23）和后侧内部反射器的装置由一个增益元件到下一反射并在用合适的辐射被泵送的增益电经由电连接件（18）的增益元件的有源区域扩增。这可以在高输出功率高光束质量来实现。

66. 发明申请

WO01069736A2 VERTICAL RESONATOR LASER DIODE COMPRISING CO-PLANAR ELECTRICAL CONNECTING CONTACTS 审中-公开
标题翻译：垂直谐振器激光二极管共面电连接联系人
公开(公告)号：WO01069736A2
公开(公告)日：2001-09-20
申请号：PCT/DE2001/000981
申请日：2001-03-14
IPC分类号： H01S5/042 , H01S5/183
CPC分类号： H01S5/18325 , H01S5/0422 , H01S5/18311
摘要： The invention relates to a vertical resonator laser diode and to a method for producing the same. According to said method, the electrical connecting contacts (7, 8) can be arranged on a common principal surface of the laser diode, for example, the light emitting side. To achieve this, a contacting zone (6) is created during the course of production by the diffusion of foreign atoms. Using said contacting zone, the side of the pn transition that faces away from the principal surface can be connected to the principal surface in an electrically conductive manner and can be provided with a corresponding connecting contact (8).
摘要翻译：描述垂直谐振器激光二极管及其制造方法，其中电连接触点（7,8）可以布置在激光二极管的公共主表面（例如其光出射侧）上。为此与主表面的pn结的接触部分（6）侧是在制造过程中的由扩散远程产生，通过该所述主表面导电连接（8）可被提供相应的端子接触的杂质的过程。

67. 发明申请

WO01067563A2 COUPLED CAVITY HIGH POWER SEMICONDUCTOR LASER 审中-公开
标题翻译：联合高功率半导体激光器
公开(公告)号：WO01067563A2
公开(公告)日：2001-09-13
申请号：PCT/US2001/007230
申请日：2001-03-06
IPC分类号： G02F1/017 , G02F1/03 , H01S3/107 , H01S3/109 , H01S5/06 , H01S5/065 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/40 , H01S5/42 , H01S3/00
CPC分类号： H01S5/18311 , H01S3/109 , H01S5/0207 , H01S5/1021 , H01S5/141 , H01S5/18355 , H01S5/18386 , H01S5/18388 , H01S5/423 , H01S2301/166
摘要： An active gain region sandwiched between a 100 % reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first ("active") resonator cavity of a high power coupled cavity surface emitting laser device. The bottom mirror is preferably in direct thermal contact with an external heat sink for maximum heat removal effectiveness. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the first active resonator cavity to a level sufficient to cause lasing. The substrate is entirely outside the active cavity but is contained within a second ("passive") resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region. The active gain region is preferably electrically excited, with a circular bottom electrode formed by an oxide current aperture between the bottom mirror and the heat sink, and with an annular top electrode formed on an upper surface of the substrate.
摘要翻译：夹在100％反射底部布拉格反射镜和中间部分反射布拉格反射镜之间的有源增益区域形成在支撑基板的下表面上，从而提供高功率耦合腔表面的第一（“有源”）谐振腔发射激光器件。底部反射镜优选与外部散热器直接热接触，以获得最大的散热效果。中间反射镜的反射率保持足够低，从而不会发生主动增益区域内的激光振荡。衬底完全在第一有源谐振腔内，达到足以引起激光的水平。衬底完全在有源腔体的外部，但是被包含在由中间反射镜和部分反射的输出反射镜所限定的第二（“无源”）谐振器腔中，其中它仅受到在增益区域。活性增益区优选地被电激励，其中由底部反射镜和散热器之间的氧化物电流孔形成的圆形底部电极，以及形成在衬底的上表面上的环形顶部电极。

68. 发明申请

WO01037386A1 SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：表面发射半导体激光器件
公开(公告)号：WO01037386A1
公开(公告)日：2001-05-25
申请号：PCT/JP2000/008047
申请日：2000-11-15
IPC分类号： H01S5/042 , H01S5/183
CPC分类号： H01S5/18394 , B82Y20/00 , H01S5/18311 , H01S5/3432 , H01S2301/166
摘要： A surface-emitting semiconductor laser device has a layer structure of semiconductor material formed on a substrate, in which a light-emitting layer (4) is interposed between an upper reflecting-mirror layer structure (5) and a lower reflecting-mirror layer structure (2). A current injection path (3e) is formed in the vicinity of the light-emitting layer (4). An upper electrode (7a) annular when viewed from above is formed on the upper surface of the upper reflecting-mirror structure (5), and the outside of the upper electrode (7a) is covered with a dielectric film (8) and a metal film (9). The metal film (9) is formed in contact with the upper electrode (7a), while the inside of the upper electrode (7a) serves as an emitting window. The peripheral part (6c) of the emitting window is covered with the metal film (9), so that the diameter of the emitting window (6A) is defined by the metal film (9), by which the lateral mode of the laser oscillation is controlled. The diameter (D0) of the emitting window (6A) is smaller than the diameter (D1) of the current injection path (3e), and the diameter (D1) of the current injection path is 10 mu m or more.
摘要翻译：表面发射半导体激光器件具有形成在基板上的半导体材料的层结构，其中发光层（4）插入在上反射镜层结构（5）和下反射镜层结构（2）。在发光层（4）附近形成电流注入路径（3e）。在上反射镜结构（5）的上表面上形成有从上方观察的上部电极（7a），上部电极（7a）的外部被绝缘膜（8）覆盖，金属电影（9）。金属膜（9）形成为与上电极（7a）接触，而上电极（7a）的内部用作发射窗口。发射窗口的周边部分（6c）被金属膜（9）覆盖，使得发射窗口（6A）的直径由金属膜（9）限定，激光振荡的横向模式被控制。发光窗（6A）的直径（D0）小于电流注入路径（3e）的直径（D1），电流注入路径的直径（D1）为10μm以上。

69. 发明申请

WO01033678A1 METHOD AND APPARATUS FOR INTEGRATED OPTICALLY PUMPED VERTICAL CAVITY SURFACE EMITTING LASERS 审中-公开
标题翻译：集成光学垂直孔表面发射激光的方法和装置
公开(公告)号：WO01033678A1
公开(公告)日：2001-05-10
申请号：PCT/US2000/014149
申请日：2000-05-23
IPC分类号： H01S5/183 , H01S5/02 , H01S5/026 , H01S5/04 , H01S5/06 , H01S5/062 , H01S5/18 , H01S3/0941
CPC分类号： H01S5/041 , H01S5/0215 , H01S5/0216 , H01S5/026 , H01S5/0265 , H01S5/0608 , H01S5/06216 , H01S5/06226 , H01S5/1085 , H01S5/18 , H01S5/18311
摘要： An integrated optically pumped vertical cavity surface emitting laser (VCSEL) (200) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser (250) together with a beam steering element (212) formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser (240), an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well known semiconductor bonding techniques. The beam steering element (212) can be an optical grating or a mirrored surface.
摘要翻译：通过将电泵浦的面内半导体激光器和垂直腔表面发射激光器（250）与形成有入射光束的光束操纵元件（212）一体地集成而形成集成的光泵浦垂直腔表面发射激光器（VCSEL）（200）平面半导体激光器。面内半导体激光器可以是包括边缘发射激光器（240），面内表面发射激光器或折叠空腔表面发射激光器的多种不同类型的面内激光器。平面内半导体激光器对VCSEL进行光泵浦使其发光。面内半导体激光器被设计成发射相对短波长的光子，而VCSEL被设计成发射具有相对较长波长的光子。面内半导体激光器和VCSEL可以以多种方式耦合在一起，包括原子结合，晶片接合，金属粘合，环氧胶或其他众所周知的半导体结合技术。光束操纵元件（212）可以是光栅或镜面。

70. 发明申请

WO0133677A2 LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM 审中-公开
标题翻译：长波长光子晶体InGaNPAsSb型I型和II型活性层用于GAAS材料系统
公开(公告)号：WO0133677A2
公开(公告)日：2001-05-10
申请号：PCT/US0041775
申请日：2000-11-01
申请人： UNIV ARIZONA , JOHNSON SHANE , DOWD PHILIP , BRAUN WOLFGANG , ZHANG YONG HANG , GUO CHANG ZHI
发明人： JOHNSON SHANE , DOWD PHILIP , BRAUN WOLFGANG , ZHANG YONG-HANG , GUO CHANG-ZHI
IPC分类号： H01S5/323 , H01S5/183 , H01S5/34 , H01S5/343 , H01S3/00
CPC分类号： B82Y20/00 , H01S5/18311 , H01S5/32366 , H01S5/3422 , H01S5/34306 , H01S5/3434
摘要： The invention discloses improved structures of light-processing (e.g., light-emitting and light-absorbing/sensing) devices, in particular Vertical Cavity Surface Emitting Lasers (VCSELs), such as may find use in telecommunications applications. The disclosed VSCAL devices and production methods provide for an active region having a quantum well structure grown on GaAs-containing substrates, thus providing processing compatibility for light having wavelength in the range 1.0 to 1.6 mu m. The active region structure combines strain-compensating barriers with different band alignments in the quantum wells to achieve a long emission wavelength while at the same time decreasing the strain in the structure. The improved functioning of the devices disclosed results from building them with multicomponent alloy layers having a large number of constituents. The invention discloses as a key constituent in the proposed alloy layers for the active region a substance, such as nitrogen (N), suitable for reducing bandgap energy (i.e., increasing light wavelength) associated with the layers, while at the same time lowering the lattice constant associated with the structure and hence lowering strain.
摘要翻译：本发明公开了光处理（例如，发光和光吸收/感测）装置，特别是垂直腔面发射激光器（VCSEL）的改进的结构，例如可用于电信应用。所公开的VSCAL装置和制造方法提供了在含GaAs衬底上生长的量子阱结构的有源区，从而为波长在1.0至1.6μm的光提供处理兼容性。有源区结构将应变补偿屏障与量子阱中的不同带对准结合在一起，以实现长发射波长，同时降低结构中的应变。所公开的装置的改进的功能通过用具有大量成分的多组分合金层来构建它们。本发明公开了用于活性区域的所提出的合金层中的关键组成部分，适合于降低与层相关的带隙能量（即，增加光波长）的物质，例如氮（N），同时降低晶格常数与结构相关，从而降低应变。

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