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61. 发明申请

WO2011074393A1 METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：驱动液晶显示装置的方法
公开(公告)号：WO2011074393A1
公开(公告)日：2011-06-23
申请号：PCT/JP2010/071204
申请日：2010-11-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun , MIYAKE, Hiroyuki
发明人： KOYAMA, Jun , MIYAKE, Hiroyuki
IPC分类号： G09G3/36 , G02F1/133 , G09G3/20
CPC分类号： G09G3/3618 , G02F1/1345 , G06F3/0416 , G06F3/0421 , G06F3/044 , G09G3/3648 , G09G3/3655 , G09G3/3696 , G09G2300/0809 , G09G2310/04 , G09G2310/061 , G09G2310/08 , G09G2320/0209 , G09G2320/0219 , G09G2320/10 , G09G2320/103 , G09G2330/021 , G09G2340/0435 , G09G2340/16 , G09G2354/00
摘要： The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential (Potential of the terminal 206A) to the common electrode; a second step of supplying a power supply voltage (Vdd) to the driver circuit portion; a third step of supplying a clock signal (GCK) to the driver circuit portion; and a fourth step of supplying a start pulse signal (GSP) to the driver circuit portion.
摘要翻译：液晶显示装置包括具有端子部分的第一基板，开关晶体管，驱动电路部分和包括像素晶体管和多个像素的像素电路部分，第二基板设置有电连接到通过开关晶体管的端子部分和像素电极与公共电极之间的液晶。在将静止图像切换为运动图像的期间中，依次执行以下步骤：将公共电位（端子206A的电位）提供给公共电极的第一步骤; 向驱动器电路部分提供电源电压（Vdd）的第二步骤; 将时钟信号（GCK）提供给驱动器电路部分的第三步骤; 以及向所述驱动器电路部分提供起始脉冲信号（GSP）的第四步骤。

62. 发明申请

WO2011062067A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011062067A1
公开(公告)日：2011-05-26
申请号：PCT/JP2010/069647
申请日：2010-10-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L27/105 , G11C16/04 , H01L21/203 , H01L21/306 , H01L21/3065 , H01L21/8234 , H01L21/8242 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L29/786
CPC分类号： H01L21/02554 , G11C11/403 , G11C11/405 , G11C16/0425 , H01L21/02565 , H01L21/02631 , H01L21/02664 , H01L27/0688 , H01L27/105 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/1156 , H01L27/1203 , H01L27/1225
摘要： It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件。半导体器件包括彼此串联连接的存储单元和电容器。一个存储单元包括连接到位线和源极线的第一晶体管，连接到信号线和字线的第二晶体管，以及连接到字线的电容器。第二晶体管包括氧化物半导体层。第一晶体管的栅电极，第二晶体管的源极和漏极之一以及电容器的一个电极彼此连接。

63. 发明申请

WO2011058934A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：WO2011058934A1
公开(公告)日：2011-05-19
申请号：PCT/JP2010/069773
申请日：2010-11-01
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： G11C11/405 , G11C11/4091 , H01L21/8242 , H01L21/8247 , H01L27/10 , H01L27/108 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： G11C7/062 , G11C7/067 , G11C11/40 , G11C2207/005 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/0688 , H01L27/105 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L27/1156 , H01L27/1203 , H01L27/1225 , H01L29/155 , H01L29/205
摘要： A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address signal; a potential generating circuit which generates a writing potential and a plurality of reading potentials to supply to a writing circuit and a reading circuit; and a control circuit which selects one of a plurality of voltages for correction on a basis of results of the reading circuit comparing a potential of the bit line with the plurality of reading potentials.
摘要翻译：半导体器件包括：源极线; 有点线字线连接到位线和字线的存储单元; 驱动电路，其驱动多个第二信号线和多个字线，以选择由地址信号指定的存储单元; 产生写入电位和多个读取电位以供给写入电路和读取电路的电位产生电路; 以及控制电路，其基于将位线的电位与多个读取电位进行比较的读取电路的结果来选择用于校正的多个电压中的一个。

64. 发明申请

WO2011058866A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2011058866A1
公开(公告)日：2011-05-19
申请号：PCT/JP2010/068795
申请日：2010-10-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L29/417
CPC分类号： H01L29/78618 , H01L29/045 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device with a novel structure and favorable characteristics. A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.
摘要翻译：目的在于提供具有新颖结构和有利特征的半导体器件。半导体器件包括氧化物半导体层，与氧化物半导体层电连接的源电极和漏电极，覆盖氧化物半导体层的栅极绝缘层，源电极和漏电极以及栅极上的栅电极绝缘层。源电极和漏极包括通过氧化其侧表面而形成的氧化物区域。注意，源电极和漏电极的氧化物区域优选通过等离子体处理形成，其中高频功率为300MHz至300GHz，以及氧和氩的混合气体。

65. 发明申请

WO2011055625A1 SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其工作方法
公开(公告)号：WO2011055625A1
公开(公告)日：2011-05-12
申请号：PCT/JP2010/068231
申请日：2010-10-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun
发明人： KOYAMA, Jun
IPC分类号： H01L27/146 , H04N5/374
CPC分类号： H01L27/14616 , H01L27/1203 , H01L27/1225 , H01L27/14612 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H04N5/37457
摘要： A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1 x 10 -13 A or less is used as a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.
摘要翻译：提供了一种长时间保持电位且包括具有稳定电特性的薄膜晶体管的固态图像传感器。通过将信号电荷存储部分初始化为固态图像传感器中的光电转换元件部分的阴极电位，省略了复位晶体管。当使用包括氧化物半导体层并且具有1×10 -13A或更小的截止电流的薄膜晶体管作为固态图像传感器的传输晶体管时，信号电荷存储部分的电位为保持恒定，从而可以提高动态范围。当将可用于互补金属氧化物半导体的硅半导体用于外围电路时，可以制造具有低功耗的高速半导体器件。

66. 发明申请

WO2011052351A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011052351A1
公开(公告)日：2011-05-05
申请号：PCT/JP2010/067496
申请日：2010-09-29
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , IMAI, Keitaro , KOYAMA, Jun
发明人： YAMAZAKI, Shunpei , IMAI, Keitaro , KOYAMA, Jun
IPC分类号： H01L21/8234 , H01L21/8238 , H01L27/00 , H01L27/06 , H01L27/08 , H01L27/088 , H01L27/092 , H01L29/786 , H03K19/20
CPC分类号： H01L27/10802 , G11C11/404 , G11C11/405 , G11C16/02 , H01L21/8258 , H01L27/0688 , H01L27/088 , H01L27/0922 , H01L27/105 , H01L27/1156 , H01L27/12 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1 x 10 -13 A or less.
摘要翻译：半导体器件包括：具有氧化物半导体层的晶体管; 以及使用除了氧化物半导体之外的半导体材料形成的逻辑电路。晶体管的源电极和漏电极中的一个电连接到逻辑电路的至少一个输入端，并且至少一个输入信号通过晶体管施加到逻辑电路。晶体管的截止电流优选为1×10-13A以下。

67. 发明申请

WO2011048929A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2011048929A1
公开(公告)日：2011-04-28
申请号：PCT/JP2010/067294
申请日：2010-09-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , IMAI, Keitaro
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , IMAI, Keitaro
IPC分类号： H01L21/8238 , H01L21/822 , H01L27/00 , H01L27/04 , H01L27/092 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/84 , H01L27/0688 , H01L27/1207 , H01L27/1225
摘要： An object of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.
摘要翻译：本发明的目的是提供一种具有新结构的半导体器件。公开了一种半导体器件，包括：第一晶体管，其在包含半导体材料的衬底上包括沟道形成区域，形成有沟道形成区域的杂质区域，沟道形成区域上的第一栅极绝缘层，所述第一栅极绝缘层以及与所述杂质区电连接的第一源电极和第一漏电极; 以及第二晶体管，其在包含半导体材料的衬底上方包括第二栅极电极，在第二栅极电极上方的第二栅极绝缘层，在第二栅极绝缘层上方的氧化物半导体层，以及第二源极电极和第二漏极电极其电连接到氧化物半导体层。

68. 发明申请

WO2005088532A1 SEMICONDUCTOR DEVICE, WIRELESS CHIP, IC CARD, IC TAG, TRANSPONDER, BILL, SECURITIES, PASSPORT, ELECTRONIC APPARATUS, BAG, AND GARMENT 审中-公开
标题翻译：半导体设备，无线芯片，IC卡，IC标签，传送器，帐单，证券，运输，电子设备，包和服装
公开(公告)号：WO2005088532A1
公开(公告)日：2005-09-22
申请号：PCT/JP2005/004584
申请日：2005-03-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , KOYAMA, Jun
发明人： KOYAMA, Jun
IPC分类号： G06K19/077
CPC分类号： G06K19/073 , G06K19/07372
摘要： The invention provides an ID chip to which data can be written only once in order to maintain high security as a non-contact type ID chip to which signals are inputted wirelessly from an antenna. A non-contact type ID chip includes a nonvolatile FeRAM in the chip. Data representative of whether data is written or not to the FeRAM is written when writing identification data, thereby data cannot be written additionally to the FeRAM of the ID chip once the data has been written.
摘要翻译：本发明提供了一种ID芯片，数据只能被写入一次，以便保持作为从天线无线地输入信号的非接触型ID芯片的高安全性。非接触型ID芯片包括芯片中的非易失性FeRAM。在写入识别数据时，写入表示数据是否被写入到FeRAM的数据，从而在写入数据后，不能向ID芯片的FeRAM另外写入数据。

69. 发明申请

WO2012111578A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：WO2012111578A1
公开(公告)日：2012-08-23
申请号：PCT/JP2012/053198
申请日：2012-02-06
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , HIRAKATA, Yoshiharu , KOYAMA, Jun , YAMAZAKI, Shunpei
发明人： HIRAKATA, Yoshiharu , KOYAMA, Jun , YAMAZAKI, Shunpei
IPC分类号： G02F1/13 , G02B27/22
CPC分类号： H04N13/31 , G02B27/225 , G02F1/13306 , G02F1/1347 , G02F1/136209 , G02F1/1368 , G09G3/003 , H01L27/1225 , H04N13/324 , H04N13/359 , H04N13/361 , H04N2213/001
摘要： A display device capable of displaying both 3D image and a 2D image is provided. The display device includes a plurality of optical filter regions where light-blocking panels(20) for producing binocular disparity are arranged in matrix. The light-blocking panel(20) can select whether to transmit light emitted from a display panel(10) in each of the plurality of optical filter regions. Thus, in the display device, some regions where binocular disparity is produced can be provided. Consequently, the display device can display both a 3D image and a 2D image.
摘要翻译：提供能够显示3D图像和2D图像的显示装置。显示装置包括多个滤光器区域，其中用于产生双目视差的遮光面板（20）以矩阵形式布置。遮光面板（20）可以选择是否在多个滤光器区域的每一个中透射从显示面板（10）发射的光。因此，在显示装置中，可以提供产生双目视差的一些区域。因此，显示装置可以同时显示3D图像和2D图像。

70. 发明申请

WO2012029638A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO2012029638A1
公开(公告)日：2012-03-08
申请号：PCT/JP2011/069241
申请日：2011-08-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD. , YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
发明人： YAMAZAKI, Shunpei , KOYAMA, Jun , KATO, Kiyoshi
IPC分类号： H01L21/8242 , C23C14/08 , G11C11/401 , H01L21/20 , H01L27/00 , H01L27/108 , H01L29/786
CPC分类号： G11C5/025
摘要： An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is provided with both a memory circuit including a transistor including an oxide semiconductor (in a broader sense, a transistor whose off-state current is sufficiently small) and a peripheral circuit such as a driver circuit including a transistor including a material other than an oxide semiconductor (in other words, a transistor capable of operating at sufficiently high speed). The peripheral circuit is provided in a lower portion and the memory circuit is provided in an upper portion; thus, the area and size of the semiconductor device can be decreased.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也能够保存存储的数据。一种半导体器件具有包括包括氧化物半导体（在更广泛的意义上为截止电流足够小的晶体管）的晶体管的存储器电路和诸如包括晶体管的驱动电路的外围电路，该晶体管包括其他材料比氧化物半导体（换句话说，能够以足够高的速度运行的晶体管）。外围电路设置在下部，存储电路设置在上部; 因此，可以减小半导体器件的面积和尺寸。

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