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61. 发明申请

WO2012166618A3 CAPPING LAYER FOR REDUCED OUTGASSING 审中-公开
标题翻译：吸收层用于减少排气
公开(公告)号：WO2012166618A3
公开(公告)日：2013-02-28
申请号：PCT/US2012039629
申请日：2012-05-25
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： H01L21/316
CPC分类号： H01L21/022 , C23C16/30 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02323 , H01L21/02326
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。通过暴露于含氧环境将膜转化为氧化硅。两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

62. 发明申请

WO2013012536A3 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 审中-公开
公开(公告)号：WO2013012536A3
公开(公告)日：2013-01-24
申请号：PCT/US2012/044679
申请日：2012-06-28
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/318 , H01L21/205
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

63. 发明申请

WO2012145148A2 LOW TEMPERATURE SILICON OXIDE CONVERSION 审中-公开
标题翻译：低温氧化硅转换
公开(公告)号：WO2012145148A2
公开(公告)日：2012-10-26
申请号：PCT/US2012/031640
申请日：2012-03-30
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , HONG, Sukwon , PATEL, Anjana M.
发明人： LIANG, Jingmei , INGLE, Nitin K. , HONG, Sukwon , PATEL, Anjana M.
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： C23C16/345 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过在低的底物温度下将聚硅氮烷膜暴露于湿度，将聚硅氮烷膜转变为氧化硅。聚硅氮烷膜也可以浸渍在具有氧和氢的液体中，例如水，过氧化氢和/或氢氧化铵。这些转化技术可以单独使用或以顺序组合使用。本文所述的转化技术加速转化，产生制造有价值的膜并去除高温氧化处理的要求。臭氧处理可以在转化技术之前。

64. 发明申请

WO2012015610A3 OXIDE-RICH LINER LAYER FOR FLOWABLE CVD GAPFILL 审中-公开
标题翻译：用于流动CVD GAPFILL的氧化物衬里层
公开(公告)号：WO2012015610A3
公开(公告)日：2012-04-26
申请号：PCT/US2011044219
申请日：2011-07-15
申请人： APPLIED MATERIALS INC , LI DONGQING , LIANG JINGMEI , INGLE NITIN K
发明人： LI DONGQING , LIANG JINGMEI , INGLE NITIN K
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Formation of gap-filling silicon oxide layer with reduced volume fraction of voids is described. Deposition involves formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within same chamber as gapfill layer. Liner layer and gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). Liner layer has more oxygen content than gapfill layer and deposits more conformally. Deposition rate of the gapfill layer may be increased by the presence of the liner layer. Gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. Presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.
摘要翻译：描述了具有减小的空隙体积分数的间隙填充氧化硅层的形成。沉积涉及在贫氧的更易流动的间隙填充层之前形成富氧的较少流动的衬层。然而，衬垫层沉积在与间隙填充层相同的腔室内。衬里层和间隙填充层可以通过将自由基组分与未掺杂的含硅前体（即不通过施加等离子体功率直接激发）组合形成。衬垫层具有比间隙填充层更多的氧含量，并且更保守地沉积。间隙填充层的沉积速率可以通过衬垫层的存在而增加。填隙层可能含有硅，氧和氮，并在高温下转化为含有更多的氧和较少的氮。间隙填料衬垫的存在在间隙填充层下面提供氧气源，以增加在转化期间引入的气相氧。

65. 发明申请

WO2012048041A2 AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS 审中-公开
标题翻译：胺固化硅氮化物 - 氢化物膜
公开(公告)号：WO2012048041A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/054981
申请日：2011-10-05
申请人： APPLIED MATERIALS, INC. , SOLIS, Earl Osman , JI, Lili , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K.
发明人： SOLIS, Earl Osman , JI, Lili , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K.
IPC分类号： C08J7/04 , C08J5/18 , C08L83/00 , C09D183/00 , H01B3/46
CPC分类号： H01L21/02326 , C23C16/345 , C23C16/56 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
摘要翻译：描述了形成电介质层的方法。该方法可以包括在衬底上形成含硅 - 氮 - 和 - 氢的层。该方法包括臭氧固化含硅氮和含氢层以将含硅氮和含氢层变成含硅和氧的层。在臭氧固化之后，在退火之前，该层在低温下暴露于胺 - 水组合。胺固化的存在允许在退火期间转变为含硅和氧的层更快且完全地在较低温度下发生。胺固化还使得退火能够使用较少氧化的环境来实现向含硅和氧的层的转化。

66. 发明申请

WO2011090626A2 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮/氢比生产自由基的介电膜生长
公开(公告)号：WO2011090626A2
公开(公告)日：2011-07-28
申请号：PCT/US2010/060852
申请日：2010-12-16
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述了形成电介质层的方法。该方法可以包括将含硅前体与自由基氮前体混合并在衬底上沉积电介质层的步骤。通过使氢气（H 2）和氮气（N 2）流入等离子体中以便调节氮/氢比率，在远程等离子体中形成自由基氮前体。介电层最初是含硅和氮的层，其可通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

67. 发明申请

WO2011090592A3 CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION 审中-公开
公开(公告)号：WO2011090592A3
公开(公告)日：2011-07-28
申请号：PCT/US2010/059933
申请日：2010-12-10
申请人： APPLIED MATERIALS, INC. , CAI, Xiuyu , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： CAI, Xiuyu , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N2) and/or hydrogen (H2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

68. 发明申请

WO2011068652A2 OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS 审中-公开
标题翻译：用于非碳离子组分CVD膜的氧气掺杂
公开(公告)号：WO2011068652A2
公开(公告)日：2011-06-09
申请号：PCT/US2010/056401
申请日：2010-11-11
申请人： APPLIED MATERIALS, INC. , INGLE, Nitin, K. , MALLICK, Abhijit Basu , SOLIS, Earl Osman , KOVARSKY, Nicolay , LYUBIMOVA, Olga
发明人： INGLE, Nitin, K. , MALLICK, Abhijit Basu , SOLIS, Earl Osman , KOVARSKY, Nicolay , LYUBIMOVA, Olga
IPC分类号： H01L21/3115 , H01L21/316 , H01L21/318 , H01L21/205
CPC分类号： C23C16/308 , C23C16/402 , C23C16/452 , C23C16/45565 , C23C16/56 , H01J37/32082 , H01J37/32357 , H01J37/32449
摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。自由基前体和含硅前体之一含有氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后，使含硅氧含氮层的氧含量增加，形成可能含有非常少的氮的氧化硅层。自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

69. 发明申请

WO2011043933A3 POST-PLANARIZATION DENSIFICATION 审中-公开
公开(公告)号：WO2011043933A3
公开(公告)日：2011-04-14
申请号：PCT/US2010/050060
申请日：2010-09-23
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/76 , H01L21/762
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

70. 发明申请

WO2007140424A3 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：WO2007140424A3
公开(公告)日：2008-02-21
申请号：PCT/US2007069999
申请日：2007-05-30
申请人： APPLIED MATERIALS INC , INGLE NITIN K , YUAN ZHENG , GEE PAUL , SAPRE KEDAR
发明人： INGLE NITIN K , YUAN ZHENG , GEE PAUL , SAPRE KEDAR
IPC分类号： C23C16/40
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/02315 , H01L21/02337 , H01L21/31633
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。该方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，并将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

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