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1. 发明申请

WO2011043933A3 POST-PLANARIZATION DENSIFICATION 审中-公开
公开(公告)号：WO2011043933A3
公开(公告)日：2011-04-14
申请号：PCT/US2010/050060
申请日：2010-09-23
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/76 , H01L21/762
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

2. 发明申请

WO2012122392A2 POST-PLANARIZATION DENSIFICATION 审中-公开
标题翻译：后期平面化差异
公开(公告)号：WO2012122392A2
公开(公告)日：2012-09-13
申请号：PCT/US2012/028310
申请日：2012-03-08
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/304
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

3. 发明申请

WO2011049800A2 STRESS MANAGEMENT FOR TENSILE FILMS 审中-公开
标题翻译：拉伸膜的应力管理
公开(公告)号：WO2011049800A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/052548
申请日：2010-10-13
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , PATEL, Anjana M. , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , PATEL, Anjana M. , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了形成具有降低的开裂倾向的间隙填充氧化硅层。沉积涉及形成可流动的含硅层，其有助于填充沟槽。在高衬底温度下的后续处理导致在电介质膜中比根据现有技术中的方法形成的可流动膜更少的开裂。描述了在形成间隙填充硅氧化物层之前沉积的压缩衬里层，并降低了随后沉积的膜开裂的趋势。在可流动的含硅层之后沉积的压缩覆盖层也被确定为减少开裂。压缩衬层和压缩覆盖层可单独使用或组合使用以减少并经常消除裂纹。另外已经确定了公开的实施例中的压缩覆盖层，以使得氮化硅的下层能够转变成氧化硅层。

4. 发明申请

WO2013052509A2 REMOTE PLASMA BURN-IN 审中-公开
标题翻译：远程等离子体燃烧
公开(公告)号：WO2013052509A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058498
申请日：2012-10-02
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
发明人： LIANG, Jingmei , JI, Lili , INGLE, Nitin K.
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。新的内表面暴露在远程等离子体系统内。（新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。步骤（1） - （2）重复至少十次以完成老化过程。在内表面的处理之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前体流过远程等离子体源并将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

5. 发明申请

WO2012094149A2 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：WO2012094149A2
公开(公告)日：2012-07-12
申请号：PCT/US2011/066275
申请日：2011-12-20
申请人： APPLIED MATERIALS, INC. , LI, DongQing , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin K.
发明人： LI, DongQing , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin K.
IPC分类号： H01L21/316
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

6. 发明申请

WO2011109148A2 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 审中-公开
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：WO2011109148A2
公开(公告)日：2011-09-09
申请号：PCT/US2011/024378
申请日：2011-02-10
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , LI, DongQing , INGLE, Nitin K.
发明人： LIANG, Jingmei , CHEN, Xiaolin , LI, DongQing , INGLE, Nitin K.
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅和氮前体和自由基 - 氮前体。无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。由于无碳膜而形成硅 - 氮膜，因此，薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。发现低温内衬层可改善润湿性能，并允许可流动膜更完全地填充沟槽。

7. 发明申请

WO2012145148A2 LOW TEMPERATURE SILICON OXIDE CONVERSION 审中-公开
标题翻译：低温氧化硅转换
公开(公告)号：WO2012145148A2
公开(公告)日：2012-10-26
申请号：PCT/US2012/031640
申请日：2012-03-30
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , HONG, Sukwon , PATEL, Anjana M.
发明人： LIANG, Jingmei , INGLE, Nitin K. , HONG, Sukwon , PATEL, Anjana M.
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： C23C16/345 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基成分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过在低的底物温度下将聚硅氮烷膜暴露于湿度，将聚硅氮烷膜转变为氧化硅。聚硅氮烷膜也可以浸渍在具有氧和氢的液体中，例如水，过氧化氢和/或氢氧化铵。这些转化技术可以单独使用或以顺序组合使用。本文所述的转化技术加速转化，产生制造有价值的膜并去除高温氧化处理的要求。臭氧处理可以在转化技术之前。

8. 发明申请

WO2011084752A3 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 审中-公开
公开(公告)号：WO2011084752A3
公开(公告)日：2011-07-14
申请号：PCT/US2010/061356
申请日：2010-12-20
申请人： APPLIED MATERIALS, INC. , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/3105 , H01L21/314
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

9. 发明申请

WO2011090592A3 CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION 审中-公开
公开(公告)号：WO2011090592A3
公开(公告)日：2011-07-28
申请号：PCT/US2010/059933
申请日：2010-12-10
申请人： APPLIED MATERIALS, INC. , CAI, Xiuyu , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： CAI, Xiuyu , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N2) and/or hydrogen (H2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

10. 发明申请

WO2013049173A2 IMPROVED INTRENCH PROFILE 审中-公开
标题翻译：改进的内容简档
公开(公告)号：WO2013049173A2
公开(公告)日：2013-04-04
申请号：PCT/US2012/057294
申请日：2012-09-26
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , INGLE, Nitin K. , TANG, Jing
发明人： SAPRE, Kedar , INGLE, Nitin K. , TANG, Jing
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/76224
摘要： A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.
摘要翻译：描述了蚀刻半导体衬底中的凹部的方法。该方法可以包括在衬底的沟槽中形成介质衬垫层，其中衬层具有第一密度。该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二电介质层。第二电介质层可以首先在沉积之后流动，并且具有小于衬垫的第一密度的第二密度。该方法可以进一步包括将衬底暴露于干蚀刻剂，其中蚀刻剂去除第一衬里层和第二介电层的一部分以形成凹陷，其中干燥蚀刻剂包括含氟化合物和分子氢，并且其中用于去除第一介电衬垫层以去除第二介电层的蚀刻速率比为约1:1.2至约1:1。

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