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1. 发明申请

WO2011084752A2 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 审中-公开
标题翻译：用于放射性组分CVD的现场臭氧固化
公开(公告)号：WO2011084752A2
公开(公告)日：2011-07-14
申请号：PCT/US2010061356
申请日：2010-12-20
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3105 , H01L21/314
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02326 , H01L21/02337 , H01L21/0234
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

2. 发明申请

WO2013036667A3 FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的可流动的碳 - 氮层
公开(公告)号：WO2013036667A3
公开(公告)日：2013-05-02
申请号：PCT/US2012053999
申请日：2012-09-06
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU , INGLE NITIN K , WANG LINLIN , UNDERWOOD BRIAN S
发明人： MALLICK ABHIJIT BASU , INGLE NITIN K , WANG LINLIN , UNDERWOOD BRIAN S
IPC分类号： H01L21/318 , H01L21/205
CPC分类号： H01L21/02274 , C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/0234 , H01L21/31111
摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
摘要翻译：描述了用于在半导体衬底上形成电介质层的方法。该方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。含硅前体和赋能的含氮前体可在化学气相沉积室中反应，以在衬底上沉积可流动的硅 - 碳 - 氮材料。该方法可以进一步包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成介电层。

3. 发明申请

WO2011084223A3 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开
标题翻译：在可流动CVD过程中形成的介电材料上进行的湿氧化过程
公开(公告)号：WO2011084223A3
公开(公告)日：2011-09-01
申请号：PCT/US2010055402
申请日：2010-11-04
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： H01L21/762
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译：提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理并在衬底上形成氧化介电材料。

4. 发明申请

WO2012166618A3 CAPPING LAYER FOR REDUCED OUTGASSING 审中-公开
标题翻译：吸收层用于减少排气
公开(公告)号：WO2012166618A3
公开(公告)日：2013-02-28
申请号：PCT/US2012039629
申请日：2012-05-25
申请人： APPLIED MATERIALS INC , WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： WANG LINLIN , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： H01L21/316
CPC分类号： H01L21/022 , C23C16/30 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02323 , H01L21/02326
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing film is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum.
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅氮和氢的膜。在含硅 - 氮和氢的膜之上形成覆盖层，以避免在转化为氧化硅之前下层膜性能的时间演变。封盖层通过将自由基氧前体（在远程等离子体中激发）与未掺杂的含硅和碳的前体组合而形成。通过暴露于含氧环境将膜转化为氧化硅。两个膜可以沉积在相同的衬底处理室内，并且可以沉积而不破坏真空。

5. 发明申请

WO2012048041A3 AMINE CURING SILICON-NITRIDE-HYDRIDE FILMS 审中-公开
标题翻译：胺固化硅 - 氮化物膜
公开(公告)号：WO2012048041A3
公开(公告)日：2012-06-28
申请号：PCT/US2011054981
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , SOLIS EARL OSMAN , JI LILI , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： SOLIS EARL OSMAN , JI LILI , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： C08J7/04 , C08J5/18 , C08L83/00 , C09D183/00 , H01B3/46
CPC分类号： H01L21/02326 , C23C16/345 , C23C16/56 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.
摘要翻译：描述形成电介质层的方法。所述方法可以包括在基底上形成含硅 - 氮和氢的层。这些方法包括将含氮 - 和氢的含氧层进行臭氧固化，以将含氮 - 和氢的层转化为含硅和氧的层。在臭氧固化之后，在退火之前将该层暴露于低温下的胺 - 水组合。胺固化的存在允许在退火期间在较低温度下转化为含硅和氧的层更快速和完全地发生。胺固化还使得退火能够使用较少的氧化环境来实现转化为含硅和氧的层。

6. 发明申请

WO2012039982A3 AIR GAP FORMATION 审中-公开
标题翻译：空气隙形成
公开(公告)号：WO2012039982A3
公开(公告)日：2012-06-14
申请号：PCT/US2011051226
申请日：2011-09-12
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU , INGLE NITIN K
发明人： MALLICK ABHIJIT BASU , INGLE NITIN K
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/764 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/7682 , H01L21/76837 , H01L2221/1047
摘要： A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
摘要翻译：在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。

7. 发明申请

WO2012048108A3 RADIATION PATTERNABLE CVD FILM 审中-公开
标题翻译：辐射可蚀刻CVD膜
公开(公告)号：WO2012048108A3
公开(公告)日：2012-07-05
申请号：PCT/US2011055102
申请日：2011-10-06
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MICHAELSON TIMOTHY , DEATON PAUL , INGLE NITIN K , MALLICK ABHIJIT BASU , CHATTERJEE AMIT
发明人： WEIDMAN TIMOTHY W , MICHAELSON TIMOTHY , DEATON PAUL , INGLE NITIN K , MALLICK ABHIJIT BASU , CHATTERJEE AMIT
IPC分类号： H01L21/027 , H01L21/205
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross- linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译：提供了用于形成对衬底上的辐射敏感的光致抗蚀剂的方法。描述了使用等离子体作为光致抗蚀剂形成膜（例如，含硅膜）的化学气相沉积方法，所述等离子体可以暴露于辐射以形成图案。沉积方法利用具有可交联部分的前体，其将在暴露于辐射时交联。辐射可以在有或没有氧存在下进行。然后可以在含水碱显影剂中显影曝光或未曝光区域。

8. 发明申请

WO2011068652A3 OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS 审中-公开
标题翻译：非碳基自由基成分CVD薄膜的氧掺杂
公开(公告)号：WO2011068652A3
公开(公告)日：2011-09-15
申请号：PCT/US2010056401
申请日：2010-11-11
申请人： APPLIED MATERIALS INC , INGLE NITIN K , MALLICK ABHIJIT BASU , SOLIS EARL OSMAN , KOVARSKY NICOLAY , LYUBIMOVA OLGA
发明人： INGLE NITIN K , MALLICK ABHIJIT BASU , SOLIS EARL OSMAN , KOVARSKY NICOLAY , LYUBIMOVA OLGA
IPC分类号： H01L21/3115 , H01L21/205 , H01L21/316 , H01L21/318
CPC分类号： C23C16/308 , C23C16/402 , C23C16/452 , C23C16/45565 , C23C16/56 , H01J37/32082 , H01J37/32357 , H01J37/32449
摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述了形成氧化硅层的方法。该方法包括同时将自由基前体和自由基氧前体与无碳含硅前体组合的步骤。自由基前体和含硅前驱物之一含有氮。该方法导致在衬底上沉积含硅 - 氧 - 和 - 氮的层。然后增加含硅 - 氧 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。自由基氧前体和自由基前体可以在分开的等离子体或相同的等离子体中产生。氧含量的增加可以通过在含氧气氛的存在下对层进行退火来实现，并且通过在惰性环境中升高温度甚至更高可进一步增加膜的密度。

9. 发明申请

WO2011090592A2 CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION 审中-公开
标题翻译：化学气相沉积改进通过自由基组分改性
公开(公告)号：WO2011090592A2
公开(公告)日：2011-07-28
申请号：PCT/US2010059933
申请日：2010-12-10
申请人： APPLIED MATERIALS INC , CAI XIUYU , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： CAI XIUYU , ZHAO YUE , MALLICK ABHIJIT BASU , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/316
CPC分类号： C23C16/345 , C23C16/505 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N2) and/or hydrogen (H2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将无碳含硅前体与自由基氮前体混合，以及在衬底上沉积含硅和氮的层。通过使氨和氮（N 2）和/或氢（H 2）流入等离子体中以便调节氮/氢比，在等离子体中形成自由基氮前体。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。

10. 发明申请

WO2013049173A3 IMPROVED INTRENCH PROFILE 审中-公开
标题翻译：改进的英语资料
公开(公告)号：WO2013049173A3
公开(公告)日：2013-06-13
申请号：PCT/US2012057294
申请日：2012-09-26
申请人： APPLIED MATERIALS INC , SAPRE KEDAR , INGLE NITIN K , TANG JING
发明人： SAPRE KEDAR , INGLE NITIN K , TANG JING
IPC分类号： H01L21/762 , H01L21/205 , H01L21/31
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/76224
摘要： A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.
摘要翻译：描述了蚀刻半导体衬底中的凹陷的方法。该方法可以包括在衬底的具有第一密度的衬底的沟槽中形成电介质衬里层。该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二介电层。第二介电层在沉积之后最初可以是可流动的，并且具有小于衬里的第一密度的第二密度。该方法可进一步包括将衬底暴露于干蚀刻剂，其中蚀刻剂去除第一衬层和第二介电层的一部分以形成凹槽，其中干蚀刻剂包括含氟化合物和分子氢，并且其中用于去除第一电介质衬垫层以去除第二电介质层的蚀刻速率比为约1：1.2至约1：1。

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