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1. 发明申请

WO2011090592A3 CHEMICAL VAPOR DEPOSITION IMPROVEMENTS THROUGH RADICAL-COMPONENT MODIFICATION 审中-公开
公开(公告)号：WO2011090592A3
公开(公告)日：2011-07-28
申请号：PCT/US2010/059933
申请日：2010-12-10
申请人： APPLIED MATERIALS, INC. , CAI, Xiuyu , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： CAI, Xiuyu , ZHAO, Yue , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing ammonia and nitrogen (N2) and/or hydrogen (H2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film.

2. 发明申请

WO2011084752A3 IN-SITU OZONE CURE FOR RADICAL-COMPONENT CVD 审中-公开
公开(公告)号：WO2011084752A3
公开(公告)日：2011-07-14
申请号：PCT/US2010/061356
申请日：2010-12-20
申请人： APPLIED MATERIALS, INC. , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/3105 , H01L21/314
摘要： Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

3. 发明申请

WO2011049800A2 STRESS MANAGEMENT FOR TENSILE FILMS 审中-公开
标题翻译：拉伸膜的应力管理
公开(公告)号：WO2011049800A2
公开(公告)日：2011-04-28
申请号：PCT/US2010/052548
申请日：2010-10-13
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , PATEL, Anjana M. , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , PATEL, Anjana M. , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了形成具有降低的开裂倾向的间隙填充氧化硅层。沉积涉及形成可流动的含硅层，其有助于填充沟槽。在高衬底温度下的后续处理导致在电介质膜中比根据现有技术中的方法形成的可流动膜更少的开裂。描述了在形成间隙填充硅氧化物层之前沉积的压缩衬里层，并降低了随后沉积的膜开裂的趋势。在可流动的含硅层之后沉积的压缩覆盖层也被确定为减少开裂。压缩衬层和压缩覆盖层可单独使用或组合使用以减少并经常消除裂纹。另外已经确定了公开的实施例中的压缩覆盖层，以使得氮化硅的下层能够转变成氧化硅层。

4. 发明申请

WO2005071740A2 LIMITED THERMAL BUDGET FORMATION OF PMD LAYERS 审中-公开
标题翻译：有限公司预计形成PMD层
公开(公告)号：WO2005071740A2
公开(公告)日：2005-08-04
申请号：PCT/US2005/000728
申请日：2005-01-10
申请人： APPLIED MATERIALS, INC. , YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
发明人： YUAN, Zheng , VENKATARAMAN, Shankar , CHING, Cary , WONG, Shan , MUKAI, Kevin, Mikio , INGLE, Nitin, K.
IPC分类号： H01L21/768
CPC分类号： C23C16/401 , C23C16/45512 , C23C16/45523 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/31625 , H01L21/76837
摘要： A method of filling a gap which is defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate, providing a flow of an oxidizing processing gas to the chamber, and providing a flow of a phosphorous-containing processing gas to the chamber. The method also includes depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas, the phosphorous-containing processing gas, and the oxidizing processing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) and maintaining the temperature of the substrate below about 500°C throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas plus phosphorous-containing processing gas):(oxidizing processing gas) substantially constant throughout deposition of the bulk layer and maintaining the temperature of the substrate below about 500°C throughout deposition of the bulk layer.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底的腔室，提供氧化处理气体到腔室的流动，并提供流动的含磷处理气体。该方法还包括通过使含硅处理气体，含磷处理气体和氧化处理气体之间的反应在间隙中沉积作为基本保形层的P掺杂氧化硅膜的第一部分。沉积保形层包括随着时间的推移，在沉积保形层的过程中（含硅处理气体加上含磷处理气体）：氧化处理气体）和将基板的温度保持在约500℃以下。该方法还包括沉积作为体层的P掺杂氧化硅膜的第二部分。沉积薄膜的第二部分包括在沉积本体层期间保持（含硅处理气体加含磷处理气体）:(氧化处理气体）的比例基本上恒定，并将基板的温度维持在约500℃以下在整个沉积层中。

5. 发明申请

WO2011017598A2 FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES 审中-公开
标题翻译：使用非碳可流动CVD工艺形成氧化硅
公开(公告)号：WO2011017598A2
公开(公告)日：2011-02-10
申请号：PCT/US2010/044680
申请日：2010-08-06
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/762 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/31608 , H01L21/3185 , H01L21/76837
摘要： A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
摘要翻译：描述形成氧化硅层的方法。该方法可以包括以下步骤：将不含碳的含硅和氮的前体与自由基前体混合，以及在衬底上沉积含硅和氮的层。然后将含硅和氮的层转化为氧化硅层。

6. 发明申请

WO2010080216A3 PRECURSOR ADDITION TO SILICON OXIDE CVD FOR IMPROVED LOW TEMPERATURE GAPFILL 审中-公开
公开(公告)号：WO2010080216A3
公开(公告)日：2010-07-15
申请号：PCT/US2009/065181
申请日：2009-11-19
申请人： APPLIED MATERIALS, INC. , VENKATARAMAN, Shankar , HAMANA, Hiroshi , HERNANDEZ, Manuel, A. , INGLE, Nitin, K. , GEE, Paul, Edward
发明人： VENKATARAMAN, Shankar , HAMANA, Hiroshi , HERNANDEZ, Manuel, A.
IPC分类号： H01L21/205 , H01L21/31 , H01L21/76
摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

7. 发明申请

WO2012122392A2 POST-PLANARIZATION DENSIFICATION 审中-公开
标题翻译：后期平面化差异
公开(公告)号：WO2012122392A2
公开(公告)日：2012-09-13
申请号：PCT/US2012/028310
申请日：2012-03-08
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/304
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

8. 发明申请

WO2013012536A3 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 审中-公开
公开(公告)号：WO2013012536A3
公开(公告)日：2013-01-24
申请号：PCT/US2012/044679
申请日：2012-06-28
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/318 , H01L21/205
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

9. 发明申请

WO2011090626A2 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮/氢比生产自由基的介电膜生长
公开(公告)号：WO2011090626A2
公开(公告)日：2011-07-28
申请号：PCT/US2010/060852
申请日：2010-12-16
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述了形成电介质层的方法。该方法可以包括将含硅前体与自由基氮前体混合并在衬底上沉积电介质层的步骤。通过使氢气（H 2）和氮气（N 2）流入等离子体中以便调节氮/氢比率，在远程等离子体中形成自由基氮前体。介电层最初是含硅和氮的层，其可通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

10. 发明申请

WO2011043933A3 POST-PLANARIZATION DENSIFICATION 审中-公开
公开(公告)号：WO2011043933A3
公开(公告)日：2011-04-14
申请号：PCT/US2010/050060
申请日：2010-09-23
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , INGLE, Nitin K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/76 , H01L21/762
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

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