专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

WO2021162856A1 3-D DRAM STRUCTURES AND METHODS OF MANUFACTURE 审中-公开
公开(公告)号：WO2021162856A1
公开(公告)日：2021-08-19
申请号：PCT/US2021/015230
申请日：2021-01-27
申请人： APPLIED MATERIALS, INC.
发明人： KANG, Chang Seok , KITAJIMA, Tomohiko , INGLE, Nitin K. , KANG, Sung-Kwan
IPC分类号： H01L27/108 , H01L49/02
摘要： Memory devices incorporating bridged word lines are described. The memory devices include a plurality of active regions spaced along a first direction, a second direction and a third direction. A plurality of conductive layers is arranged so that at least one conductive layer is adjacent to at least one side of each of the active regions along the third direction. A conductive bridge extends along the second direction to connect each of the conductive layers to one or more adjacent conductive layer. Some embodiments include an integrated etch stop layer. Methods of forming stacked memory devices are also described.

52. 发明申请

WO2021067362A1 SELECTIVE COBALT VERTICAL ETCH 审中-公开
公开(公告)号：WO2021067362A1
公开(公告)日：2021-04-08
申请号：PCT/US2020/053411
申请日：2020-09-30
申请人： APPLIED MATERIALS, INC.
发明人： CUI, Zhenjiang , WAKABAYASHI, Ryo , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3213 , C23F4/00
摘要： Exemplary methods for selectively etching cobalt-containing material from a substrate may include forming a plasma of a carbon-containing precursor in a substrate processing region housing the substrate. The substrate may include exposed cobalt-containing material. The methods may include forming a conformal carbon-containing film on the exposed cobalt-containing material. The methods may include forming a local plasma of a hydrogen-containing precursor and removing a portion of the carbon-containing film to expose at least a portion of a surface of the cobalt-containing material. The methods may include forming a local plasma of a chlorine-containing precursor and contacting the exposed portion of the surface of the cobalt-containing material with chlorine-containing plasma effluents to form cobalt chloride complexes. The methods may include flowing a nitrogen-containing precursor into the processing region and contacting the cobalt chloride complexes with the nitrogen-containing precursor. The methods may include recessing the surface of the cobalt-containing material.

53. 发明申请

WO2017123423A1 HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE 审中-公开
标题翻译：基于氢等离子体的硬质合金清洗工艺
公开(公告)号：WO2017123423A1
公开(公告)日：2017-07-20
申请号：PCT/US2016/069204
申请日：2016-12-29
申请人： APPLIED MATERIALS, INC.
发明人： RODRIGO, Chirantha , ZHANG, Jingchun , JI, Lili , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3065 , H01L21/67 , H01L21/02 , H01L21/3213
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32357 , H01J37/3244 , H01J37/32724 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/67069 , Y10S438/905
摘要： The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.
摘要翻译：本公开提供了用于在衬底蚀刻之后清洁腔室组件的方法。在一个实例中，用于清洁的方法包括使用等离子体激活蚀刻气体混合物以产生活化的蚀刻气体混合物，蚀刻气体混合物包含含氢前体和含氟前体，并将活化的蚀刻气体混合物输送到处理所述处理室具有定位在其中的边缘环，所述边缘环包含催化剂和抗催化材料，其中所述活化气体从所述边缘环移除所述抗催化材料。

54. 发明申请

WO2016171853A1 CLEANING HIGH ASPECT RATIO VIAS 审中-公开
标题翻译：清洁高度比例VIAS
公开(公告)号：WO2016171853A1
公开(公告)日：2016-10-27
申请号：PCT/US2016/024958
申请日：2016-03-30
申请人： APPLIED MATERIALS INC
发明人： LIU, Jie , PARK, Seung , WANG, Anchuan , CUI, Zhenjiang , INGLE, Nitin K.
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/027
CPC分类号： H01L21/02057 , H01L21/02063 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/02598 , H01L21/0262 , H01L21/0273 , H01L21/3065 , H01L21/3081 , H01L21/31111 , H01L21/31116 , H01L21/32137 , H01L27/11556 , H01L27/11582
摘要： A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.
摘要翻译：描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

55. 发明申请

WO2016111811A1 SELF-ALIGNED PROCESS 审中-公开
标题翻译：自对准过程
公开(公告)号：WO2016111811A1
公开(公告)日：2016-07-14
申请号：PCT/US2015/065719
申请日：2015-12-15
申请人： APPLIED MATERIALS, INC
发明人： PANDIT, Mandar B. , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/68
CPC分类号： H01J37/32412 , H01J37/32357 , H01L21/3065 , H01L21/31116 , H01L21/31155 , H01L21/76825 , H01L21/76897
摘要： Methods of forming self-aligned structures on patterned substrates are described. The methods may be used to form metal lines or vias without the use of a separate photolithography pattern definition operation. Self-aligned contacts may be produced regardless of the presence of spacer elements. The methods include directionally ion-implanting a gapfill portion of a gapfill silicon oxide layer to implant into the gapfill portion without substantially ion-implanting the remainder of the gapfill silicon oxide layer (the sidewalls). Subsequently, a remote plasma is formed using a fluorine-containing precursor to etch the patterned substrate such that the gapfill portions of silicon oxide are selectively etched relative to other exposed portions exposed parallel to the ion implantation direction. Without ion implantation, the etch operation would be isotropic owing to the remote nature of the plasma excitation during the etch process.
摘要翻译：描述了在图案化衬底上形成自对准结构的方法。该方法可用于形成金属线或通孔而不使用单独的光刻图案定义操作。可以产生自对准的触点，而不管间隔元件的存在。所述方法包括定向地离子注入间隙填充氧化硅层的间隙填充部分以注入到间隙填充部分中，而基本上不离子注入间隙填充氧化硅层（侧壁）的剩余部分。随后，使用含氟前体形成远程等离子体以蚀刻图案化衬底，使得相对于平行于离子注入方向暴露的其它暴露部分选择性地蚀刻氧化硅的间隙填充部分。在没有离子注入的情况下，蚀刻操作将是各向同性的，这是由于在蚀刻过程期间等离子体激发的远端特性。

56. 发明申请

WO2016060801A1 SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT 审中-公开
标题翻译：等离子体处理设备内部表面调节评估系统与方法
公开(公告)号：WO2016060801A1
公开(公告)日：2016-04-21
申请号：PCT/US2015/051636
申请日：2015-09-23
申请人： APPLIED MATERIALS, INC
发明人： PARK, Soonam , ZHU, Yufei , SUAREZ, Edwin C. , INGLE, Nitin K. , LUBOMIRSKY, Dmitry , HUANG, Jiayin
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01J37/32972 , C23C16/4405 , C23C16/452 , C23C16/45565 , C23C16/50 , C23C16/52 , G01J3/0218 , G01J3/443 , H01J37/32082 , H01J37/32532 , H01J37/3255
摘要： In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.
摘要翻译：在一个实施例中，等离子体源包括构造成通过其中的第一穿孔传送一个或多个等离子体源气体的第一电极; 绝缘体，设置成围绕第一电极的周边与第一电极接触; 以及第二电极，设置有第二电极的周边抵靠绝缘体，使得第一和第二电极和绝缘体限定等离子体产生腔。第二电极被配置为使等离子体产物从等离子体产生腔通过其中朝向处理室移动。电源提供穿过第一和第二电极的电力，以使等离子体与等离子体产生腔中的一个或多个等离子体源气体点燃以产生等离子体产物。第一电极，第二电极和绝缘体之一包括提供来自等离子体的光信号的端口。

57. 发明申请

WO2015112300A1 AIR GAPS BETWEEN COPPER LINES 审中-公开
标题翻译：铜线之间的空气流量
公开(公告)号：WO2015112300A1
公开(公告)日：2015-07-30
申请号：PCT/US2014/071969
申请日：2014-12-22
申请人： APPLIED MATERIALS, INC.
发明人： PURAYATH, Vinod R. , INGLE, Nitin K.
IPC分类号： H01L21/764
CPC分类号： H01L21/7682 , C23C2/006 , H01J37/32357 , H01L21/30655 , H01L21/31116 , H01L21/76205 , H01L27/1087 , H01L2221/101
摘要： Methods are described for forming "air gaps" between adjacent copper lines on patterned substrates. The common name "air gap" will be used interchangeably the more technically accurate "gas pocket" and both reflect a variety of pressures and elemental ratios. The gas pockets may be one or more pores within dielectric material located between copper lines. Adjacent copper lines may be bordered by a lining layer and air gaps may extend from one lining layer on one copper line to the lining layer of an adjacent copper line. The gas pockets can have a dielectric constant approaching one, favorably reducing interconnect capacitance compared with typical low-K dielectric materials.
摘要翻译：描述了用于在图案化基板上的相邻铜线之间形成“气隙”的方法。通用名称“气隙”可以互换使用更技术上更精确的“气袋”，并且都反映了各种压力和元素比。气穴可以是位于铜线之间的电介质材料内的一个或多个孔。相邻的铜线可以由衬里层界定，并且气隙可以从一条铜线上的一个衬里层延伸到相邻铜线的衬里层。与典型的低K电介质材料相比，气穴可以具有接近一个的介电常数，有利地减小互连电容。

58. 发明申请

WO2015094541A1 EVEN TUNGSTEN ETCH FOR HIGH ASPECT RATIO TRENCHES 审中-公开
标题翻译：即使用于高比例比例的TUNGSTEN蚀刻
公开(公告)号：WO2015094541A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/066176
申请日：2014-11-18
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Xikun , LIU, Jie , WANG, Anchuan , INGLE, Nitin K.
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , H01J37/32357 , H01J2237/334
摘要： Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include ion bombardment of a patterned substrate having high aspect ratio trenches. The ion bombardment includes fluorine-containing ions and the ion bombardment may be stopped before breaking through the horizontal liner portion outside the trenches but near the opening of the trenches. The methods then include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasmas effluents react with exposed surfaces and remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region.
摘要翻译：描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。这些方法包括具有高纵横比沟槽的图案化衬底的离子轰击。离子轰击包括含氟离子，并且可以在穿过沟槽外部的水平衬套部分但在沟槽的开口附近之前停止离子轰击。然后，该方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与钨反应。等离子体流出物与暴露的表面反应并从沟槽的外部和沟槽的侧壁上除去钨。等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。

59. 发明申请

WO2014179072A1 LOW TEMPERATURE FLOWABLE CURING FOR STRESS ACCOMMODATION 审中-公开
标题翻译：低温流动固化应力应变
公开(公告)号：WO2014179072A1
公开(公告)日：2014-11-06
申请号：PCT/US2014/034309
申请日：2014-04-16
申请人： APPLIED MATERIALS, INC.
发明人： LIANG, Jingmei , INGLE, Nitin K. , HONG, Sukwon , DUBE, Abhishek , LI, DongQing
IPC分类号： H01L21/324
CPC分类号： C23C16/56 , C23C16/401 , C23C16/452 , C23C16/50
摘要： Methods of forming gapfill silicon-containing layers are described. The methods may include providing or forming a silicon-and-hydrogen-containing layer on a patterned substrate. The methods include non-thermally treating the silicon-and-hydrogen-containing layer at low substrate temperature to increase the concentration of Si-Si bonds while the silicon-and-hydrogen-containing layer remains soft. The flaccid layer is able to adjust to the departure of hydrogen from the film and retain a high density without developing a stress. Film qualify is further improved by then inserting O between Si-Si bonds to expand the film in the trenches thereby converting the silicon-and-hydrogen-containing layer to a silicon-and-oxygen-containing layer.
摘要翻译：描述形成间隙填充含硅层的方法。所述方法可以包括在图案化衬底上提供或形成含硅和氢的层。这些方法包括在低衬底温度下非热处理含硅和氢的层以增加Si-Si键的浓度，同时含硅和氢的层保持柔软。松弛层能够适应于离开膜的氢离子并保持高密度而不产生应力。然后通过在Si-Si键之间插入O以使沟槽中的膜膨胀，从而将含硅和含氢层转化为含硅和氧的层，进一步改善了膜鉴定性。

60. 发明申请

WO2014137609A1 CONTROLLED AIR GAP FORMATION 审中-公开
标题翻译：控制空气隙形成
公开(公告)号：WO2014137609A1
公开(公告)日：2014-09-12
申请号：PCT/US2014/017350
申请日：2014-02-20
申请人： APPLIED MATERIALS, INC.
发明人： THADANI, Kiran V. , XU, Jingjing , MALLICK, Abhijit Basu , CRUZ, Joe Griffith , INGLE, Nitin K. , NARWANKAR, Pravin K.
IPC分类号： H01L21/205
CPC分类号： H01L21/2015 , C23C16/045 , C23C16/26 , C23C16/30 , C23C16/56 , H01J37/32357 , H01L21/02115 , H01L21/02126 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/3105 , H01L21/764 , H01L21/7682 , H01L21/76837 , H01L2221/1047
摘要： A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.
摘要翻译：在衬底上形成和控制相邻凸起特征之间的气隙的方法包括使用可流动的沉积工艺在相邻凸起特征之间的底部区域中形成含硅膜。该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。第二膜填充相邻凸起特征之间的上部区域。该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式