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    • 37. 发明申请
    • THERMOELECTRIC MODULE WITH MEANS FOR COMPENSATING FOR A THERMAL EXPANSION
    • 热电模块有用于补偿热膨胀
    • WO2012095344A3
    • 2012-09-07
    • PCT/EP2012050106
    • 2012-01-04
    • EMITEC EMISSIONSTECHNOLOGIELIMBECK SIGRIDBRUECK ROLF
    • LIMBECK SIGRIDBRUECK ROLF
    • H01L35/32
    • H01L35/32F01N5/025H01L35/34
    • The invention relates to a thermoelectric module (1) that extends in a longitudinal direction (9), comprising an outer pipe (2), an inner pipe (3) arranged within the outer pipe (2), and an intermediate space (4) arranged between said pipes. At least one first strip-shaped structure (5) and a second strip-shaped structure (7) are provided. Said first strip-shaped structure (5) extends from a first connection (6) on the inner pipe (3) and the second strip-shaped structure (7) extends from a second connection (12) on the outer pipe (2) in respective opposite directions (11) in at least one circumferential direction (8) or in the longitudinal direction (9) and at least partly form an overlap (10) at least in the circumferential direction (8) or in the longitudinal direction (9), at least one pair of semiconductor elements (13) being arranged in the region of the overlap (10).
    • 热电模块(1),其延伸在纵向方向(9),其具有外管(2)和布置在所述外管(2)的内管(3)和插入的中间空间(4),其中,至少一个第一条带形结构内的一个 (5)并且设置有第二带状结构(7),所述第一带状结构(5)从第一连接(6)延伸,开始(从第二连接到所述内管(3)和所述第二带状结构(7) 12)(上外筒2)(在每种情况下在相反的方向11)延伸的至少一个圆周方向(8)或长度方向(9)和(在圆周方向8)或至少(在长度方向9)至少部分地重叠(10)的形式, 其中,在所述重叠(10),至少一对半导体元件(13)的区域被布置。
    • 39. 发明申请
    • THERMOELECTRIC DEVICE
    • 热电装置
    • WO2011023451A3
    • 2011-05-26
    • PCT/EP2010060186
    • 2010-07-15
    • EMITEC EMISSIONSTECHNOLOGIEBRUECK ROLFLIMBECK SIGRID
    • BRUECK ROLFLIMBECK SIGRID
    • H01L35/32
    • H01L35/30F01N5/025Y02T10/16
    • The invention relates to a thermoelectric device (1) comprising at least one first flow channel (8) and at least one second flow channel (9), having - at least one first substrate (3) associated with the at least one first flow channel (8) and at least one second substrate (4) associated with the at least one second flow channel (9), at least one gap (5) between the first substrate (3) and the second substrate (4), a plurality of p and n-doped semiconductor elements (7) that are disposed in the at least one gap (5) and are electrically interconnected, wherein a relative first thermal expansion of the first substrate and a relative second expansion of the second substrate are equal under operating conditions. The invention further relates to suitable materials for the first and second substrate that promote the use of such thermoelectric devices (1) in an exhaust system of a motor vehicle.
    • 热电装置(1),包括至少一个第一流动通道(8)和(9)具有至少一个第二流动通道 - 所述至少一个第一流动通道中的至少一个(8)与所述第一支撑层(3)和所述至少一个第二流动通道中的至少一个(9)关联 相关联的第二载流子层(4),至少一个第一支撑层(3)和第二载流子层(4),多个p型和n型半导体元件之间的中间空间(5)(7)在所述至少一个中间空间 (5)被布置并且电连接到彼此,其中所述第一支撑层的第一相对热膨胀和第二支撑层的操作条件下的第二相对膨胀是相同的。 用于第一和第二载体层的其它合适材料被指定,这有利于用在机动车辆的排气系统中这样的热电装置(1)的。