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    • 24. 发明申请
    • METHODS AND APPARATUS FOR SEQUENTIALLY ALTERNATING AMONG PLASMA PROCESSES IN ORDER TO OPTIMIZE A SUBSTRATE
    • 用于顺序替换等离子体处理以优化基板的方法和装置
    • WO2006068971A2
    • 2006-06-29
    • PCT/US2005/045725
    • 2005-12-16
    • LAM RESEARCH CORPORATIONKIERMASZ, AdrianPANDHUMSOPORN, TamarakCOFER, Alferd
    • KIERMASZ, AdrianPANDHUMSOPORN, TamarakCOFER, Alferd
    • C23F1/00
    • C03C23/006C23C4/02H01J37/32935H01L21/67253
    • In plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic. The method also includes selecting second plasma process recipe including a second process variable, wherein changing the second process variable by a second amount aggravates the fist substrate etch characteristic and optimizes the second substrate etch characteristic. The method further includes positioning a substrate on a chuck in a plasma processing chamber; and striking a plasma within the plasma processing chamber. The method also includes alternating between the first plasma recipe and the second plasma recipe, wherein upon completion of the alternating, the first substrate etch characteristic and the second substrate etch characteristic are substantially optimized.
    • 在等离子体处理系统中,公开了一种用于优化衬底蚀刻的方法。 该方法包括选择包括第一过程变量的第一等离子体处理配方,其中以第一量改变第一过程变量优化第一衬底蚀刻特性并加重第二衬底蚀刻特性。 该方法还包括选择包括第二过程变量的第二等离子体处理配方,其中以第二量改变第二过程变量加剧了第一衬底蚀刻特性,并优化了第二衬底蚀刻特性。 该方法还包括将基板定位在等离子体处理室中的卡盘上; 并在等离子体处理室内击打等离子体。 该方法还包括在第一等离子体配方和第二等离子体配方之间交替,其中在完成交替时,基本上优化了第一衬底蚀刻特性和第二衬底蚀刻特性。