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21. 发明申请

WO2008045201A1 LOW-NOISE DC/DC CONVERTER WITH CONTROLLED DIODE CONDUCTION 审中-公开
标题翻译：低噪声DC / DC转换器与控制二极管导通
公开(公告)号：WO2008045201A1
公开(公告)日：2008-04-17
申请号：PCT/US2007/020685
申请日：2007-09-25
申请人： ADVANCED ANALOGIC TECHNOLOGIES, INC. , WILLIAMS, Richard, K. , D'ANGELO, Kevin, P.
发明人： WILLIAMS, Richard, K. , D'ANGELO, Kevin, P.
IPC分类号： H02M1/08 , H02M1/16
CPC分类号： H02M1/38 , H02M3/1588 , H02M2001/0029 , Y02B70/1466
摘要： The synchronous rectifier MOSFET in a Buck or boost DC/DC converter is operated as a current source rather than being turned off, thereby reducing undesirable losses in efficiency, the generation of unwanted electrical and radiated noise, and numerous other potential problems, particularly when the converter is operating in a light-load condition.
摘要翻译：降压或升压DC / DC转换器中的同步整流器MOSFET作为电流源而不是关断，从而减少不必要的效率损失，产生不需要的电和辐射噪声以及许多其他潜在问题，特别是当转换器工作在轻负载状态。

22. 发明申请

WO2007142969A1 ISOLATION STRUCTURES FOR INTEGRATED CIRCUITS AND MODULAR METHODS OF FORMING THE SAME 审中-公开
标题翻译：集成电路的隔离结构及其形成的模块化方法
公开(公告)号：WO2007142969A1
公开(公告)日：2007-12-13
申请号：PCT/US2007/012738
申请日：2007-05-30
申请人： ADVANCED ANALOGIC TECHNOLOGIES, INC. , RYU, Hyungsik , CHAN, Wai, Tien , DISNEY, Donald, Ray , WILLIAMS, Richard, K. , CHEN, Jun-wei
发明人： RYU, Hyungsik , CHAN, Wai, Tien , DISNEY, Donald, Ray , WILLIAMS, Richard, K. , CHEN, Jun-wei
IPC分类号： H01L21/76
CPC分类号： H01L29/0646 , H01L21/26513 , H01L21/761 , H01L21/76224 , H01L21/76237 , H01L21/76243 , H01L21/76267 , H01L21/763 , H01L21/823481 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
摘要翻译：用于半导体衬底的各种隔离结构包括形成在衬底中的沟槽，其填充有电介质材料或填充有导电材料并且沿着沟槽的壁衬有介电层。沟槽可以与掺杂的侧壁隔离区域组合使用。沟槽和侧壁隔离区域都可以是环形的并且包围衬底的隔离袋。隔离结构通过不包括显着的热处理或掺杂剂扩散的模块化注入和蚀刻工艺形成，使得所得到的结构是紧凑的并且可以紧密地堆积在衬底的表面中。

23. 发明申请

WO2007116336A3 METHOD AND APPARATUS FOR MONITORING ALTERATION OF FLOW CHARACTERISTICS IN A LIQUID SAMPLE 审中-公开
公开(公告)号：WO2007116336A3
公开(公告)日：2007-10-18
申请号：PCT/IB2007/051129
申请日：2007-03-29
申请人： AGAMATRIX, INC. , HARDING, Ian , IYENGAR, Sridhar, G. , NGUYEN, Ha , WILLIAMS, Richard
发明人： HARDING, Ian , IYENGAR, Sridhar, G. , NGUYEN, Ha , WILLIAMS, Richard
IPC分类号： G01N33/49
摘要： A device for measuring blood coagulation time is formed from a first substrate; a second substrate; a spacer layer disposed between the first and second substrates, said spacer layer having an opening formed therein defining a sample receiving chamber, a vented sink chamber, and an elongated reservoir forming a conduit for liquid movement between the sample receiving chamber and the sink chamber; a first electrode disposed on the first substrate, said first electrode being exposed in the reservoir portion through a first opening in the spacer layer; and a second electrode disposed on the second substrate, said second electrode being exposed in the reservoir portion through a second opening in the spacer layer. The device of the invention is used in combination with an apparatus that is connected to the first and second electrodes for measuring current flow between the first and second electrodes. Changes in observed current are indicative of flow through the device, and a cessation of flow indicates coagulation.

24. 发明申请

WO2007070311A1 ISOLATION STRUCTURES FOR SEMICONDUCTOR INTEGRATED CIRCUIT SUBSTRATES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：半导体集成电路基板的隔离结构及其形成方法
公开(公告)号：WO2007070311A1
公开(公告)日：2007-06-21
申请号：PCT/US2006/046579
申请日：2006-12-07
申请人： ADVANCED ANALOGIC TECHNOLOGIES, INC. , WILLIAMS, Richard, K.
发明人： WILLIAMS, Richard, K.
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L21/76232
摘要： Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar from the dielectric materials in the main portions of the trenches and field oxide regions may be used to protect the structures from erosion during later process steps. The top surfaces of the isolation structures are coplanar with the surface of the substrate. Field doping regions may be formed beneath the field oxide regions. To meet the demands of different devices, the isolation structures may have varying widths and depths.
摘要翻译：用于半导体衬底的隔离区包括介质填充沟槽和场氧化物区域。可以使用与沟槽和场氧化物区域的主要部分中的电介质材料不相似的介电材料的保护盖，以在后续工艺步骤中保护结构免受侵蚀。隔离结构的顶表面与衬底的表面共面。场掺杂区域可以形成在场氧化物区域之下。为了满足不同设备的需求，隔离结构可能具有不同的宽度和深度。

25. 发明申请

WO2006109277B1 DETERMINATION OF PARTIAL FILL IN ELECTROCHEMICAL STRIPS 审中-公开
标题翻译：电化学工业部分填充物的测定
公开(公告)号：WO2006109277B1
公开(公告)日：2007-04-12
申请号：PCT/IB2006051180
申请日：2006-04-15
申请人： AGAMATRIX INC , HARDING IAN , DIAMOND STEVEN , WILLIAMS RICHARD , IYENGAR SRIDHAR
发明人： HARDING IAN , DIAMOND STEVEN , WILLIAMS RICHARD , IYENGAR SRIDHAR
IPC分类号： G01N33/487
CPC分类号： G01N27/327
摘要： Partial fill of an electrochemical test strip is determined by making a DC determination of double layer capacitance from charging or discharging charge on a test strip containing sample, for example a blood sample to be tested for glucose. The measured double layer capacitance is compared to a reference value. The double layer capacitance may be determined as an integral or differential capacitance. Double layer capacitance may also be used for quality control to monitor the quality of electrode formation, particularly in strips using screen printed electrodes.
摘要翻译：电化学测试条的部分填充通过在含有样品的测试条（例如要测试葡萄糖的血液样品）上进行充电或放电电荷的双层电容的DC测定来确定。将测量的双层电容与参考值进行比较。双层电容可以被确定为积分或差分电容。双层电容也可用于质量控制，以监测电极形成的质量，特别是使用丝网印刷电极的条带。

26. 发明申请

WO2006109279A3 ANALYTE DETERMINATION METHOD AND ANALYTE METER 审中-公开
标题翻译：分析测定方法和分析仪
公开(公告)号：WO2006109279A3
公开(公告)日：2007-03-08
申请号：PCT/IB2006051188
申请日：2006-04-17
申请人： AGAMATRIX INC , HARDING IAN , WILLIAMS RICHARD , IYENGAR SRIDHAR
发明人： HARDING IAN , WILLIAMS RICHARD , IYENGAR SRIDHAR
IPC分类号： G01N33/487 , C12Q1/00
CPC分类号： G01N27/3274 , C12Q1/006 , G01N27/307 , G01N27/327 , G01N27/3272 , G01N27/3273
摘要： The presence of oxygen or red blood cells in a sample applied to an electrochemical test strip that makes use of a reduced mediator is corrected for by an additive correction factor that is determined as a function of the temperature of the sample and a measurement that reflects the oxygen carrying capacity of the sample. The measured oxygen carrying capacity can also be used to determine hematocrit and to distinguish between blood samples and control solutions applied to a test strip.
摘要翻译：在施加到使用还原介体的电化学测试条的样品中的氧或红细胞的存在通过作为样品的温度的函数确定的添加剂校正因子来校正，并且反映样品的氧气承载能力。测量的氧气承载能力也可用于确定血细胞比容并区分血液样本和应用于测试条的对照溶液。

27. 发明申请

WO2006014426A1 INSULATION PAPER FACING CONTAINING AN ANTIMICOTIC OF FUNGICIDE AND METHODS OF MAKING AND USING THE SAME 审中-公开
标题翻译：含有杀真菌剂抗菌剂的绝缘纸及其制造方法和使用方法
公开(公告)号：WO2006014426A1
公开(公告)日：2006-02-09
申请号：PCT/US2005/023819
申请日：2005-07-06
申请人： INTERNATIONAL PAPER COMPANY , NGUYEN, Hung, T. , HOLBERT, Victor, P. , CULHANE, William, J. , KULKARNI, Sandeep , WILLIAMS, Richard, C. , FABER, Richard, D.
发明人： NGUYEN, Hung, T. , HOLBERT, Victor, P. , CULHANE, William, J. , KULKARNI, Sandeep , WILLIAMS, Richard, C. , FABER, Richard, D.
IPC分类号： D21H21/36
CPC分类号： D21H21/36 , A01N25/34 , A01N43/80 , D21H17/14 , D21H17/61 , D21H19/00 , D21H27/00
摘要： The invention relates to the papermaking art and, in particular, to the manufacture of insulation paper facing having improved reduction or inhibition in the growth of mold and/or fungus. This invention also relates to articles of manufacture made from such products such insulation, construction articles, buildings and the like.
摘要翻译：本发明涉及造纸领域，尤其涉及在模具和/或真菌生长中具有改进的减少或抑制作用的绝缘纸面的制造。本发明还涉及由这种产品制成的制品，例如绝缘材料，建筑用品，建筑物等。

28. 发明申请

WO2006011882A1 TRENCH MOSFET WITH RECESSED CLAMPING DIODE 审中-公开
标题翻译：带有钳位二极管的TRENCH MOSFET
公开(公告)号：WO2006011882A1
公开(公告)日：2006-02-02
申请号：PCT/US2004/021211
申请日：2004-06-30
申请人： ADVANCED ANALOGIC TECHNOLOGIES, INC. , ADVANCED ANALOGIC TECHNOLOGIES (HONG KONG) LIMITED , WILLIAMS, Richard , CORNELL, Michael , CHAN, Wai Tien
发明人： WILLIAMS, Richard , CORNELL, Michael , CHAN, Wai Tien
IPC分类号： H01L27/108
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0878 , H01L29/42368 , H01L29/66734 , H01L29/7808
摘要： In a trench-gated MOSFET (840) including an epitaxial layer (842) over a substrate (841) of like conductivity and trenches containing thick bottom oxide (846), sidewall gate oxide (850), and conductive gates (844), body regions (843) of the complementary conductivity are shallower than the gates (844), and clamp regions (853) are deeper and more heavily doped than the body regions but shallower than the trenches. Zener junctions clamp a drain-source voltage lower than the FPI breakdown of body junctions near the trenches, but the zener junctions, being shallower than the trenches, avoid undue degradation of the maximum drain-source voltage. The epitaxial layer (842) may have a dopant concentration that increases step-wise or continuously with depth. Chained implants of the body (843) and clamp regions (853) permit accurate control of dopant concentrations and of junction depth. Alternative fabrication processes permit implantation of the body (843) and clamp regions (853) before gate bus (852) formation or through the gate bus (852) after gate bus formation.
摘要翻译：在包括具有类似导电性的衬底（841）上的外延层（842）和包含厚底部氧化物（846），侧壁栅极氧化物（850）和导电栅极（844）的沟槽的沟槽选通MOSFET（840）中，互补电导率的区域（843）比栅极（844）浅，并且钳位区域（853）比体区域更深且更重掺杂，但是比沟槽浅。齐纳结钳位漏极 - 源极电压低于沟槽附近的主体结的FPI击穿，但是比沟槽更浅的齐纳结避免了最大漏极 - 源极电压的不适当的降低。外延层（842）可以具有随深度逐步增加或连续增加的掺杂剂浓度。身体（843）和夹紧区域（853）的链式植入允许准确控制掺杂剂浓度和结深度。替代的制造工艺允许在栅极总线（852）形成之后或在栅极总线形成之后通过栅极总线（852）注入主体（843）和钳位区域（853）。

29. 发明申请

WO2005093550A2 METHODS AND APPARATUSES FOR OPERATING A PORTABLE DEVICE BASED ON AN ACCELEROMETER 审中-公开
标题翻译：基于加速度计操作便携式设备的方法和装置
公开(公告)号：WO2005093550A2
公开(公告)日：2005-10-06
申请号：PCT/US2005/003599
申请日：2005-01-27
申请人： APPLE COMPUTER, INC. , WEHRENBERG, Paul, J. , LEIBA, Aaron , WILLIAMS, Richard, C. , FALKENBURG, David, R. , GERBARG, Louis, G. , CHANG, Ray, L.
发明人： WEHRENBERG, Paul, J. , LEIBA, Aaron , WILLIAMS, Richard, C. , FALKENBURG, David, R. , GERBARG, Louis, G. , CHANG, Ray, L.
IPC分类号： G06F1/16
CPC分类号： G06F3/0346 , G06F1/1605 , G06F1/1616 , G06F1/1626 , G06F1/1684 , G06F1/1694 , G06F1/1698 , G06F3/016 , G06F3/04845 , G06F3/0485 , G06F3/162 , G06F3/165 , G06F3/167 , G06F2200/1614 , G06F2200/1636 , G06F2200/1637
摘要： Methods and apparatuses for operating a portable device based on an accelerometer are described. According to one embodiment of the invention, an accelerometer attached to a portable device detects a movement of the portable device. In response, a machine executable code is executed within the portable device to perform one or more predetermined user configurable operations. Other methods and apparatuses are also described.
摘要翻译：描述了用于操作基于加速度计的便携式设备的方法和装置。根据本发明的一个实施例，附接到便携式设备的加速度计检测便携式设备的移动。作为响应，在便携式设备内执行机器可执行代码以执行一个或多个预定的用户可配置操作。还描述了其它方法和装置。

30. 发明申请

WO2005055248A3 ORGANIC SEMICONDUCTING LAYER FORMULATIONS COMPRISING POLYACENES AND ORGANIC BINDER POLYMERS 审中-公开
标题翻译：包含聚丙烯和有机粘合剂聚合物的有机半导体层制剂
公开(公告)号：WO2005055248A3
公开(公告)日：2005-07-28
申请号：PCT/GB2004004973
申请日：2004-11-25
申请人： AVECIA LTD , BROWN BEVERLEY ANNE , VERES JANOS , ANEMIAN REMI MANOUK , WILLIAMS RICHARD THOMAS , OGIER SIMON DOMINIC , LEEMING STEPHEN WILLIAM
发明人： BROWN BEVERLEY ANNE , VERES JANOS , ANEMIAN REMI MANOUK , WILLIAMS RICHARD THOMAS , OGIER SIMON DOMINIC , LEEMING STEPHEN WILLIAM
IPC分类号： C07F7/08 , C08L35/06 , C08L39/04 , H01B1/12 , H01B1/20 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/20
CPC分类号： C08L39/04 , C07F7/0809 , C07F7/0818 , C08L35/06 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0566 , H01L51/42 , H01L51/50 , Y02E10/549 , C08L2666/02 , C08L2666/28
摘要： An organic semiconducting layer formulation, which comprises: an organic binder which has a permittivity, ϵ, at 1,000 Hz of 3.3 or less; and a polyacene compound of Formula: (A) wherein: each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11 and R12, which may be the same or different, independently represents hydrogen; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C40 aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group (-C(=O)NH2); a haloformyl group (-C(=O)-X, wherein X represents a halogen atom); a formyl group (-C(=O)-H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and wherein independently each pair of R2 and R3 and/or R8 and R9, may be cross-bridged to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group shown by formula -N(Ra)- (wherein Ra is a hydrogen atom or an optionally substituted hydrocarbon group), or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituents R1-R12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C4-C40 saturated or unsaturated ring optionally interrupted by O, S or -N(Ra) where Ra is as defined above) or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1, 2, 3 or 4, also claimed is an electronic device, particularly an organic field effect transistor comprising the organic semiconductor layer formulation.
摘要翻译：一种有机半导体层制剂，其包含：在1000Hz下介电常数ε为3.3或更小的有机粘合剂; 和（A）的多并苯化合物，其中：可以相同或不同的R 1，R 2，R 3，R 4，R 5，R 6，R 7，R 8，R 9，R 10，R 11和R 12各自独立地表示氢; 任选取代的C 1 -C 40碳原子或烃基; 任选取代的C 1 -C 40烷氧基; 任选取代的C 6 -C 40芳氧基; 任选取代的C 7 -C 40烷基芳氧基; 任选取代的C 2 -C 40烷氧基羰基; 任选取代的C 7 -C 40芳氧基羰基; 氰基（-CN）; 氨基甲酰基（-C（= O）NH 2）; 卤代甲酰基（-C（= O）-X，其中X表示卤素原子）; 甲酰基（-C（= O）-H）; 异氰基团异氰酸酯基; 硫氰酸酯基或硫代异氰酸酯基; 任选取代的氨基; 羟基; 硝基; CF3组; 卤代基（CI，Br，F）; 或任选取代的甲硅烷基; 并且其中独立地，每对R 2和R 3和/或R 8和R 9可以交桥以形成C 4 -C 40饱和或不饱和环，该饱和或不饱和环可以被氧原子，硫原子或基团-N（R a） - （其中R a是氢原子或任选取代的烃基），或可以任选地被取代; 并且其中多并苯骨架的一个或多个碳原子可任选地被选自N，P，As，O，S，Se和Te的杂原子取代; 并且其中独立地位于多并苯的相邻环位上的任何两个或更多个取代基R 1 -R 12可以一起任选地构成任选地被O，S或-N（R a）中断的另外的C 4 -C 40饱和或不饱和环，其中Ra如上所定义）或与多并烯稠合的芳环体系; 并且其中n为0,1,2,3或4，还要求保护的是电子器件，特别是包含有机半导体层配方的有机场效应晶体管。

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