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11. 发明申请

WO2009055017A1 DYNAMIC OPTICAL SIGNAL TRACKING ON A DETECTOR ARRAY IN A FREE SPACE OPTICAL COMMUNICATION SYSTEM 审中-公开
标题翻译：在自由空间光通信系统中的检测器阵列上的动态光信号跟踪
公开(公告)号：WO2009055017A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/012097
申请日：2008-10-23
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MORRIS, Terrel , TAN, Michael, Renne, Ty , WANG, Shih-yuan , WILLIAMS, R., Stanley , STEWART, Duncan , FIORENTINO, Marco
发明人： MORRIS, Terrel , TAN, Michael, Renne, Ty , WANG, Shih-yuan , WILLIAMS, R., Stanley , STEWART, Duncan , FIORENTINO, Marco
IPC分类号： G02B6/10
CPC分类号： H04B10/1121
摘要： A free-space optical communication system includes a detector array(102; 202) having a plurality of detector elements (204) and a transmitting source(210; 310). Dynamic movement of the optical signal on the detector array is caused by changes in orientation of the transmitting source. A tracker (206) tracks the movement of the optical signal in real-time on the detector array. An output signal is derived from at least one of the detector elements illuminated by the optical signal.
摘要翻译：自由空间光通信系统包括具有多个检测器元件（204）和发射源（210; 310）的检测器阵列（102; 202）。光信号在探测器阵列上的动态移动是由发射源方向的变化引起的。跟踪器（206）在检测器阵列上实时跟踪光信号的移动。从由光信号照亮的检测器元件中的至少一个导出输出信号。

12. 发明申请

WO2010082928A1 SILICON-BASED MEMRISTIVE DEVICE 审中-公开
标题翻译：基于硅的力学装置
公开(公告)号：WO2010082928A1
公开(公告)日：2010-07-22
申请号：PCT/US2009/031140
申请日：2009-01-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PICKETT, Matthew D. , STEWART, Duncan
发明人： PICKETT, Matthew D. , STEWART, Duncan
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/265
CPC分类号： H01L27/101 , G11C13/00 , G11C13/0069 , G11C2013/009 , G11C2213/33 , G11C2213/77 , H01L27/2463 , H01L45/085 , H01L45/1206 , H01L45/1233 , H01L45/148
摘要： A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a mobile dopant species (210, 215) within the silicon memristive matrix (105) which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture (610) containing a silicon memristive matrix (105) includes: applying a programming electrical field by applying a voltage bias across a first conductor (602) and a second conductor (604); a silicon memristive matrix (105, 606) containing mobile dopants (210, 215) being interposed between the first conductor (602) and the second conductor (604), the programming voltage repositioning the mobile dopants (210, 215) within the silicon memristive matrix (105, 606); and reading a state of the silicon memristive matrix (105, 606) by applying a reading energy across the silicon memristive matrix (105, 606), the reading energy producing a measurable indication of the state of the silicon memristive matrix (105, 606).
摘要翻译：忆阻器（100）包括第一和第二电极（110,115）; 插入在所述第一电极（110）和所述第二电极（115）之间的硅忆阻矩阵（105）; 以及在所述硅忆阻矩阵（105）内的移动掺杂剂物质（210,215），其响应于编程电场而移动并且在去除所述编程电场之后保持基本上就位。一种使用包含硅忆阻矩阵（105）的交叉结构（610）的方法包括：通过跨第一导体（602）和第二导体（604）施加电压偏置来施加编程电场; 包含位于第一导体（602）和第二导体（604）之间的移动掺杂剂（210,215）的硅忆阻矩阵（105,606），所述编程电压重新定位硅忆阻器内的移动掺杂剂（210,215）矩阵（105,606）; 以及通过在所述硅忆阻矩阵（105,606）上施加读取能量来读取所述硅忆阻矩阵（105,606）的状态，所述读取能量产生所述硅忆阻矩阵（105,606）的状态的可测量指示，。

13. 发明申请

WO2008048215A2 CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD 审中-公开
标题翻译：联系人地平线设备，系统和方法
公开(公告)号：WO2008048215A2
公开(公告)日：2008-04-24
申请号：PCT/US2006/028299
申请日：2006-07-21
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STEWART, Duncan , WU, Wei
发明人： STEWART, Duncan , WU, Wei
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/7035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A contact lithography apparatus 100, 220, system 200 and method 300 use a deformation 320 to facilitate pattern transfer 300. The apparatus 100, 220, system 200 and method 300 include a spacer 120, 226 that provides a spaced apart parallel and proximal orientation 310 of lithographic elements, such as a mask 110, 228a, 222 and a substrate 130, 228b, 224, when in mutual contact with the spacer 120, 226. One or more of the mask 110, 228a, 222, the substrate 130, 228b, 224 and the spacer 120, 226 is deformable, such that deformation 320 thereof facilitates the pattern transfer 300.
摘要翻译：接触式光刻设备100,220，系统200和方法300使用变形320以便于图案转移300.设备100,220，系统200和方法300包括间隔物120,226，其间隔开的平行和近端取向310 当与间隔物120,226相互接触时，诸如掩模110,228a，222和衬底130,228b，224之间的光刻元件的一个或多个掩模110,228a，222，衬底130,228b ，224和间隔件120,226是可变形的，使得其变形320有利于图案转移300。

14. 发明申请

WO2008045545A2 DEFORMATION-BASED CONTACT LITHOGRAPHY SYSTEMS, APPARATUS AND METHODS 审中-公开
标题翻译：基于变形的联系人LITHOGRAPHY SYSTEMS，APPARATUS AND METHODS
公开(公告)号：WO2008045545A2
公开(公告)日：2008-04-17
申请号：PCT/US2007/021850
申请日：2007-10-12
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STEWART, Duncan , WALMSLEY, Robert, G. , HARTWELL, Peter , WU, Wei
发明人： STEWART, Duncan , WALMSLEY, Robert, G. , HARTWELL, Peter , WU, Wei
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/50
摘要： A pattern tool (200 or 200a) and/or substrate (300 or 300a) including one or more strain control regions (208 or 308) to prevent deformation-related misalignment.
摘要翻译：包括一个或多个应变控制区域（208或308）的图形工具（200或200a）和/或基板（300或300a），以防止变形相关的未对准。

15. 发明申请

WO2009035587A1 ELECTRICAL CONTACT APPARATUS FOR OPTICAL WAVEGUIDES 审中-公开
标题翻译：用于光波导的电气接触装置
公开(公告)号：WO2009035587A1
公开(公告)日：2009-03-19
申请号：PCT/US2008/010532
申请日：2008-09-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , SANTORI, Charles , STEWART, Duncan , KUEKES, Philip J, , KAMINS, Theodore I,
发明人： SANTORI, Charles , STEWART, Duncan , KUEKES, Philip J, , KAMINS, Theodore I,
IPC分类号： G02B6/10
CPC分类号： G02B6/1226 , B82Y20/00 , G02F1/01708 , G02F2203/15
摘要： An optical apparatus (100, 200, 300, 400, 500, 600, 700) includes a waveguide (120) configured to propagate optical energy; an electrical contact surface (105, 401); and a semiconductor electrical interconnect (115, 215, 215-1, 215-2, 215-3, 315, 315-1, 315-2, 315-3, 315-4, 315-5, 315-6, 315-7, 410, 515, 615, 625, 715) extending from a first surface of the optical waveguide (120) to electrical communication with the electrical contact surface (105, 401). The semiconductor electrical interconnect (115, 215, 215-1, 215-2, 215-3, 315, 315-1, 315-2, 315-3, 315-4, 315-5, 315-6, 315-7, 410, 515, 615, 625, 715) comprises a geometry configured to substantially confine the optical energy to the waveguide (120).
摘要翻译：光学装置（100,200,300,400,500,600,700）包括被配置为传播光能的波导（120）; 电接触表面（105,401）; 以及半导体电互连（115,215,215-1,215-2,215-3,315,315-1,315-2,315-3,315-4,315-5,315-6,315〜从所述光波导（120）的第一表面延伸到与所述电接触表面（105,401）电连通的第二端子（7,410,515,615,625,715）。半导体电互连（115,215,215-1,215-2,215-3,315,315-1,315-2,315-3,315-4,315-5,315-6,315-7），410,515,615，625,715）包括被配置为基本上将所述光能限制到所述波导（120）的几何形状。

16. 发明申请

WO2008134021A1 ACTIVE CONTROL OF TIME-VARYING SPATIAL TEMPERATURE DISTRIBUTION 审中-公开
标题翻译：时空变化空间分布的主动控制
公开(公告)号：WO2008134021A1
公开(公告)日：2008-11-06
申请号：PCT/US2008/005398
申请日：2008-04-25
申请人： HEWLETT=PACKARD DEVELOPMENT COMPANY, L. P. , STEWART, Duncan , BEAUSOLEIL, Raymond , KUEKES, Philip, J.
发明人： STEWART, Duncan , BEAUSOLEIL, Raymond , KUEKES, Philip, J.
IPC分类号： H01L23/36
CPC分类号： F27B17/0025 , F27D19/00 , H01L2924/0002 , H01L2924/00
摘要： In an embodiment, a microchip (10) includes a plurality of heat-producing electronic devices (14) and a plurality of heat-sensitive devices (16). A plurality of temperature control elements (18) are spatially distributed relative to the heat-producing electronis devices and the heat-senitive devices to enable active contoal of temperature to compensate for spatially non-uniform and temporally-varying heat emitted from the heat-producing electronic devices.
摘要翻译：在一个实施例中，微芯片（10）包括多个发热电子器件（14）和多个热敏器件（16）。多个温度控制元件（18）相对于发热电子装置和热传递装置在空间上分布，以使得能够有效地调节温度以补偿从发热产生的空间上不均匀和时间变化的热量电子设备。

17. 发明申请

WO2008054400A2 CONTROL LAYER FOR A NANOSCALE ELECTRONIC SWITCHING DEVICE 审中-公开
标题翻译：用于纳米电子开关器件的控制层
公开(公告)号：WO2008054400A2
公开(公告)日：2008-05-08
申请号：PCT/US2006/043687
申请日：2006-11-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , STEWART, Duncan , OHLBERG, Douglas, A. , WILLIAMS, Stanley, R. , KUEKES, Philip, J.
发明人： STEWART, Duncan , OHLBERG, Douglas, A. , WILLIAMS, Stanley, R. , KUEKES, Philip, J.
IPC分类号： G11C13/02 , H01L21/768 , H01L51/00
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer (26, 26', 28, 28', 28") for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28") includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale switching device (10). The control layer (26, 26', 28, 28', 28") is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device (10).
摘要翻译：公开了一种用于纳米级电子开关装置（10）的接合处的控制层（26,26'，28,28'，28“），控制层（26,26'，28,28'，28” ）包括与纳米级切换装置（10）中的连接层（16）和至少一个电极（12,14）化学相容的材料。控制层（26,26'，28,28'，28“）适于在装置（10）的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

18. 发明申请

WO2007120695A2 RICH COLOR IMAGE PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：丰富的彩色图像处理方法和设备
公开(公告)号：WO2007120695A2
公开(公告)日：2007-10-25
申请号：PCT/US2007/008915
申请日：2007-04-09
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , STEWART, Duncan , WANG, Shih-Yuam , KUEKES, Philip J, , BRATKOVSKI, Alexandre
发明人： STEWART, Duncan , WANG, Shih-Yuam , KUEKES, Philip J, , BRATKOVSKI, Alexandre
CPC分类号： H04N9/045 , G02B26/001 , H04N5/2254 , H04N9/3108
摘要： Techniques for rich color image processing are disclosed. The techniques include using as array of tunable optical filter elements (304) to define pixels of an image. The tunable optical filter elements are adjusted during an image dwell time to control the color filtering of the individuals pixels. Exemplary embodiments for image capture (300) and projection (700) are illustrated.
摘要翻译：公开了用于丰富彩色图像处理的技术。这些技术包括使用可调谐光学滤光器元件（304）的阵列来定义图像的像素。在图像驻留时间期间调整可调谐滤光器元件以控制个体像素的颜色滤波。示出了用于图像捕获（300）和投影（700）的示例性实施例。

19. 发明申请

WO2009002524A3 ELECTRIC-FIELD-ENHANCEMENT STRUCTURE AND DETECTION APPARATUS USING SAME 审中-公开
标题翻译：电场增强结构和使用该电场增强结构的检测装置
公开(公告)号：WO2009002524A3
公开(公告)日：2008-12-31
申请号：PCT/US2008/007934
申请日：2008-06-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , FATTAL, David , LI, Zhiyong , TONG, William , STEWART, Duncan , BLACXSTOCK, Jason
发明人： FATTAL, David , LI, Zhiyong , TONG, William , STEWART, Duncan , BLACXSTOCK, Jason
IPC分类号： G01J3/44 , G01J4/00
摘要： Various aspects of the prsent invention are directed to electric-field-enhancement structures (100) and detection apparatuses (600, 700, 800) that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure (100) includes a substrate (102) having a surface (104). The substrate (102) is capable of supporting a planar mode (114) having a planar-mode frequency. A plurality of nanofeatures (106) is associated with the surface (104), and each of nanofeatures (106) exhibits a localized-surface-plasmon mode (116) having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.
摘要翻译：本发明的各个方面涉及采用这种电场增强结构的电场增强结构（100）和检测装置（600,700,800）。在本发明的一个方面中，电场增强结构（100）包括具有表面（104）的衬底（102）。衬底（102）能够支持具有平面模式频率的平面模式（114）。多个纳米特征（106）与表面（104）相关联，并且纳米特征（106）中的每一个表现出局域表面等离子体激元模式（116），局部表面等离子激元频率近似等于平面模式频率

20. 发明申请

WO2009008923A2 METHODS OF MAKING NANO-SCALE STRUCTURES HAVING CONTROLLED SIZE, NANOWIRE STRUCTURES AND METHODS OF MAKING THE NANOWIRE STRUCTURES 审中-公开
标题翻译：制造具有控制尺寸的纳米尺度结构的方法，纳米结构和制备纳米结构的方法
公开(公告)号：WO2009008923A2
公开(公告)日：2009-01-15
申请号：PCT/US2008/004423
申请日：2008-04-02
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , KOBAYASHI, Nobuhiko , WU, Wei , STEWART, Duncan , SHARMA, Shashank , WANG, Shih-yuan , WILLIAMS, R. Stanley,
发明人： KOBAYASHI, Nobuhiko , WU, Wei , STEWART, Duncan , SHARMA, Shashank , WANG, Shih-yuan , WILLIAMS, R. Stanley,
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制备具有受控尺寸的纳米级半导体结构的方法。还公开了包括一个或纳米线（104,204,304,404,504,604,704）的半导体结构（200,300,400,500,600.707）。纳米线可以包括钝化层或具有中空管结构。

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