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    • 12. 发明申请
    • SINGLE RF OSCILLATOR FOR RFID READERS WITH FREQUENCY TRANSLATION AND FILTERING
    • 用于具有频率翻译和滤波的RFID读取器的单个RF振荡器
    • WO2006096524A3
    • 2007-05-31
    • PCT/US2006007636
    • 2006-03-03
    • IMPINJ INCTHOMAS MICHAELCOOPER SCOTTESTERBERG AANAND
    • THOMAS MICHAELCOOPER SCOTTESTERBERG AANAND
    • G08B13/14
    • G06K7/0008
    • A transmitter shifts a baseband data signal having a bandwidth of 2O>M using a tone signal having a frequency 6>M, which centers a sideband of the data signal at zero frequency. The transmitter then filters the shifted signal to filter out the non- centered sideband, and then adds the tone signal to form a composite signal. The transmitter upconverts the composite signal during a first operational mode using a RP signal having a frequency ?c equal to a center frequency of a channel. In a second operational mode, the transmitter upconverts a DC level using the same RF signal. The upconverted DC level can be used as a continuous wave carrier signal having a frequency ?c- The transmitter has a single RF oscillator to output both a SSB signal centered at frequency ?c during the first mode and a carrier signal of frequency ?c during the second mode.
    • 发射机使用具有频率6> M的音调信号来移动具有20MHz带宽的基带数据信号,该频率使数据信号的边带以零频率居中。 然后,发射机对移位的信号进行滤波以滤除非中心边带,然后将音调信号相加以形成复合信号。 发射机在第一操作模式期间使用频率ωc等于信道的中心频率的RP信号来上变频合成信号。 在第二种操作模式中,发射器使用相同的RF信号上变频DC电平。 上变频DC电平可以用作具有频率ωc的连续波载波信号。发射机具有单个RF振荡器,以在第一模式期间输出以频率ωc为中心的SSB信号,并且在频率ωc期间输出频率ωc的载波信号 第二种模式。
    • 13. 发明申请
    • LASER THIN FILM POLY-SILICON ANNEALING SYSTEM
    • 激光薄膜多晶硅退火系统
    • WO2005054949A3
    • 2005-12-15
    • PCT/US2004037617
    • 2004-11-12
    • CYMER INCPARTLO WILLIAM NDAS PALASH PHUDYMA RUSSELLTHOMAS MICHAEL
    • PARTLO WILLIAM NDAS PALASH PHUDYMA RUSSELLTHOMAS MICHAEL
    • B23K26/06G03F20060101H01L21/20H01S3/081H01S3/22H01S3/223H01S3/225H01S3/23
    • H01S3/0818B23K26/042B23K26/0622B23K26/0738B23K26/705H01L21/02532H01L21/02675H01S3/225H01S3/2255H01S3/2308H01S3/2366
    • A gas discharge laser crystallization apparatus and method for performing a transformation of a crystal makeup or orientation in a film on a workpiece is disclosed, which may comprise a master oscillator power amplifier MOPA or power oscillator power amplifier configured XeF laser system producing a laser output light pulse beam at a high repetition rate and high power with a pulse to pulse dose control; an optical system producing an elongated thin pulsed working beam from the laser output light pulse beam. The apparatus may further comprise the laser system is configured as a POPA laser system and further comprising: relay optics operative to direct a first output laser light pulse beam from a first laser PO unit into a second laser PA unit; and, a timing and control module timing the creation of a gas discharge in the first and second laser units within plus or minus 3 ns, to produce the a second laser output light pulse beam as an amplification of the first laser output light pulse beam. The system may comprise divergence control in the oscillator laser unit. Divergence control may comprise an unstable resonator arrangement. The system may further comprise a beam pointing control mechanism intermediate the laser and the workpiece and a beam position control mechanism intermediate the laser and the workpiece. Beam parameter metrology may provide active feedback control to the beam pointing mechanism and active feedback control to the beam position control mechanism.
    • 公开了一种气体放电激光结晶装置和方法,用于在工件上进行膜内晶体结构或取向的变换,其可包括主振荡器功率放大器MOPA或功率振荡器功率放大器配置的XeF激光系统,产生激光输出光 脉冲束以高重复率和高功率以及脉冲到脉冲剂量控制; 光学系统从激光输出光脉冲束产生细长的薄脉冲工作光束。 该设备可以进一步包括激光系统被配置为POPA激光系统并且还包括:中继光学器件,用于将来自第一激光PO单元的第一输出激光脉冲光束引导到第二激光PA单元中; 以及定时和控制模块,用于在第一和第二激光单元中产生正或负3ns内的气体放电,以产生作为第一激光输出光脉冲束的放大的第二激光输出光脉冲束。 该系统可以包括振荡器激光器单元中的发散控制。 发散控制可以包括不稳定的谐振器布置。 该系统还可以包括位于激光器和工件之间的光束指向控制机构以及位于激光器和工件之间的光束位置控制机构。 波束参数测量可以提供对波束指向机构的主动反馈控制和对波束位置控制机构的主动反馈控制。
    • 14. 发明申请
    • SENSOR SYSTEM AND METHODS USED TO DETECT MATERIAL WEAR AND SURFACE DETERIORATION
    • 传感器系统和用于检测材料磨损和表面检测的方法
    • WO2004024979A9
    • 2004-07-15
    • PCT/US0328832
    • 2003-09-12
    • HONEYWELL INT INCBONNE ULRICHMOSHER JOHNPOBLANO PHILIPGRABMEIER SUSANNETHOMAS MICHAELSTROTHERS SUSAN
    • BONNE ULRICHMOSHER JOHNPOBLANO PHILIPGRABMEIER SUSANNETHOMAS MICHAELSTROTHERS SUSAN
    • C23C14/34
    • H01J37/3479C23C14/3407
    • A sensor system has been developed for measuring erosion of a sputtering target (510) in a vacuum chamber that includes: a) a sputtering target, b) a wafer, c) a vacuum atmosphere located between the sputtering target and the wafer, and d) a sensor device (525) directly coupled to the sputtering target (510), wherein the sensor device (525) is exposed to the vacuum atmosphere and comprises a data collection apparatus that is exposed to atmospheric pressure. A method of detecting erosion in a sputtering target (510) has also been developed that includes: a) providing a sputtering target (510), b) providing a wafer (550), c) initiating a vacuum atmosphere and a plasma that are located between the sputtering target (510) and the wafer (550), d) providing a sensor device (525) directly coupled to the sputtering target (510), wherein the sensor device (525) is partly exposed to the vacuum atmosphere and comprises a data collection apparatus that is exposed to atmospheric pressure, e) collecting data from the data collection apparatus; and f) automatically terminating the operation of the plasma once the data collection apparatus determines that the sputtering target (510) has sufficiently eroded.
    • 已经开发了用于测量真空室中的溅射靶(510)的侵蚀的传感器系统,其包括:a)溅射靶,b)晶片,c)位于溅射靶和晶片之间的真空气氛,d )直接耦合到所述溅射靶(510)的传感器装置(525),其中所述传感器装置(525)暴露于所述真空气氛,并且包括暴露于大气压的数据采集装置。 还开发了一种检测溅射靶(510)中的侵蚀的方法,包括:a)提供溅射靶(510),b)提供晶片(550),c)启动位于 在所述溅射靶(510)和所述晶片(550)之间,d)提供直接耦合到所述溅射靶(510)的传感器装置(525),其中所述传感器装置(525)部分地暴露于所述真空气氛并且包括 暴露于大气压的数据收集装置,e)从数据收集装置收集数据; 以及f)一旦数据收集装置确定溅射靶(510)已被充分侵蚀,则自动终止等离子体的操作。
    • 15. 发明申请
    • SPUTTERING TARGET
    • 飞溅目标
    • WO0194660A3
    • 2002-05-30
    • PCT/US0117798
    • 2001-05-31
    • HONEYWELL INT INCSEGAL VLADIMIRTHOMAS MICHAELLI JIANXINGFERRASSE STEPHANEALFORD FRANKSCOTT TIMTURNER STEPHEN
    • SEGAL VLADIMIRTHOMAS MICHAELLI JIANXINGFERRASSE STEPHANEALFORD FRANKSCOTT TIMTURNER STEPHEN
    • C23C14/34B22F1/00
    • C23C14/3414B21C23/001
    • A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.
    • 材料可以包括尺寸使得测量面积的至少99%含有表现出小于测量区域的平均粒度的面积的10倍的颗粒的颗粒。 作为实例,测量面积的至少99%可以含有晶粒面积小于平均晶粒尺寸面积的8,6或3倍的晶粒。 颗粒的平均粒度也可以小于最小静态再结晶晶粒尺寸的3倍,例如,平均粒度小于约50微米,10微米或1微米。 该材料可以由溅射靶材组成,并且薄膜可以从这样的溅射靶材沉积在衬底上。 微观还原方法可以包括从包括如上所述尺寸的晶粒的溅射靶溅射膜。 溅射靶的形成方法可以包括使溅射材料变形。 在变形之后,溅射材料可以被成形为溅射靶的至少一部分。 溅射靶可以包括如上所述的尺寸的晶粒。 此外,变形可以引起对应于至少约4的ε的应变水平。此外,变形可以包括相等的通道角挤压。
    • 20. 发明申请
    • REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
    • 损坏的电介质材料和膜的修复和恢复
    • WO2004068555A3
    • 2005-02-03
    • PCT/US2004002252
    • 2004-01-26
    • HONEYWELL INT INCFAN WENYALU VICTORTHOMAS MICHAELDANIELS BRIANNGUYEN TIFFANYZHOU DE-LINGNAMAN ANANTHJIN LEIBHANAP ANIL
    • FAN WENYALU VICTORTHOMAS MICHAELDANIELS BRIANNGUYEN TIFFANYZHOU DE-LINGNAMAN ANANTHJIN LEIBHANAP ANIL
    • H01L21/312H01L21/47H01L21/76
    • H01L21/31058H01L21/3105H01L21/76801H01L2924/0002H01L2924/00
    • Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
    • 本文描述了修复材料中空隙的方法,其包括:a)提供具有多个反应性硅烷醇基团的材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法,其包括:a)提供具有多个反应性硅烷醇基团的缺碳材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外,本文描述了用于减少膜和/或缺碳膜的冷凝的方法,其包括:a)提供具有多个反应性硅烷醇基团的膜; b)将膜放入等离子体室中; c)将多个含反应性有机部分的硅烷引入所述室中; 和d)允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述,其包括:a)具有多个硅原子的无机材料; 和b)多个含有机部分的硅烷化合物,其中硅烷化合物通过至少一些硅原子与无机材料偶联。