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    • 8. 发明申请
    • REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
    • 损坏的电介质材料和膜的修复和恢复
    • WO2004068555A2
    • 2004-08-12
    • PCT/US2004/002252
    • 2004-01-26
    • HONEYWELL INTERNATIONAL INCFAN, WenyaLU, VictorTHOMAS, MichaelDANIELS, BrianNGUYEN, TiffanyZHOU, De-LingNAMAN, AnanthJIN, LeiBHANAP, Anil
    • FAN, WenyaLU, VictorTHOMAS, MichaelDANIELS, BrianNGUYEN, TiffanyZHOU, De-LingNAMAN, AnanthJIN, LeiBHANAP, Anil
    • H01L
    • H01L21/31058H01L21/3105H01L21/76801H01L2924/0002H01L2924/00
    • Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
    • 本文描述了修复材料中空隙的方法,其包括:a)提供具有多个反应性硅烷醇基团的材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法,其包括:a)提供具有多个反应性硅烷醇基团的缺碳材料; b)提供至少一种反应性表面改性剂; 和c)使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外,本文描述了用于减少膜和/或缺碳膜的冷凝的方法,其包括:a)提供具有多个反应性硅烷醇基团的膜; b)将膜放入等离子体室中; c)将多个含反应性有机部分的硅烷引入所述室中; 和d)允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述,其包括:a)具有多个硅原子的无机材料; 和b)多个含有机部分的硅烷化合物,其中硅烷化合物通过至少一些硅原子与无机材料偶联。