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    • 95. 发明申请
    • APPARATUS AND METHOD FOR GENERATING A DELAYED CLOCK SIGNAL
    • 用于产生延迟时钟信号的装置和方法
    • WO2005050842A2
    • 2005-06-02
    • PCT/US2004037503
    • 2004-11-08
    • MICRON TECHNOLOGY INCJANZEN LEEL S
    • JANZEN LEEL S
    • G06F1/04G11C7/10H03K
    • G11C7/1066G06F1/04G06F1/10G06F1/12G11C7/1072G11C7/222G11C2207/2254
    • An apparatus and method for generating a delayed clock signal is provided. The clock signal generator includes a synchronizing circuit for generating an output clock signal from an input clock signal and further includes a delay circuit having an input coupled to the output of the synchronizing circuit. The delay circuit provides an output clock signal having a delay with respect to the clock signal from the synchronizing circuit according to one of a plurality of programmable time delays selected in accordance with a selection signal. The method of generating a clock signal includes synchronizing an internal clock signal to an external clock signal, and delaying the internal clock signal different amounts based on a selection value indicative of external clock frequency to provide the clock signal.
    • 提供了一种用于产生延迟时钟信号的装置和方法。 时钟信号发生器包括用于从输入时钟信号产生输出时钟信号的同步电路,并且还包括具有耦合到同步电路的输出的输入的延迟电路。 延迟电路根据根据选择信号选择的多个可编程时间延迟中的一个提供相对于来自同步电路的时钟信号具有延迟的输出时钟信号。 产生时钟信号的方法包括将内部时钟信号与外部时钟信号同步,并且基于指示外部时钟频率的选择值来延迟内部时钟信号的不同量以提供时钟信号。
    • 96. 发明申请
    • AN APPARATUS AN METHOD FOR A CONFIGURABLE MIRROR FAST SENSE AMPLIFIER
    • 一种可配置的镜像快速感测放大器的方法
    • WO2004077439A3
    • 2004-12-29
    • PCT/US2004004729
    • 2004-02-17
    • ATMEL CORPBEDARIDA LORENZOSACCO ANDREAMARZIANI MONICA
    • BEDARIDA LORENZOSACCO ANDREAMARZIANI MONICA
    • G11C7/06G11C7/14G11C16/28G11C11/34
    • G11C16/28G11C7/062G11C7/14G11C2207/063G11C2207/2254
    • A configurable mirror sense amplifier system for flash memory having the following features. A power source generates a reference voltage. A plurality of transistors is biased at the reference voltage. The plurality of transistors is each coupled to a second transistor. Each of the plurality of transistors is also configured to provide a current for comparison with the flash memory. The reference voltage is internal, stable and independent from variations of a power supply or temperature. The plurality of transistors is in parallel with one another. A mirror transistor is coupled to the plurality of transistors. The plurality of transistors is configured so that at least one of at least one transistor is activated with a signal in order to provide the current for comparison to the flash memory. Also, the reference voltage may be modified in order to modify the current for comparison to the flash memory.
    • 一种用于闪存的可配置的镜像放大器系统,具有以下特征。 电源产生参考电压。 多个晶体管被偏置在参考电压。 多个晶体管各自耦合到第二晶体管。 多个晶体管中的每一个也被配置为提供用于与闪速存储器进行比较的电流。 参考电压是内部的,稳定的,独立于电源或温度的变化。 多个晶体管彼此并联。 反射镜晶体管耦合到多个晶体管。 多个晶体管被配置为使得至少一个晶体管中的至少一个被激活,以便提供用于与闪存相比较的电流。 此外,可以修改参考电压以便修改用于与闪存存储器进行比较的电流。
    • 99. 发明申请
    • ACTIVE TERMINATION CIRCUIT AND METHOD FOR CONTROLLING THE IMPEDANCE OF EXTERNAL INTEGRATED CIRCUIT TERMINALS
    • 主动终止电路和控制外部集成电路端子阻抗的方法
    • WO2003047104A1
    • 2003-06-05
    • PCT/US2002/037454
    • 2002-11-20
    • MICRON TECHNOLOGY, INC.
    • MARTIN, Chris, G.
    • H03K17/16
    • G11C7/1084G11C7/1051G11C7/1057G11C7/1072G11C7/1078G11C11/4093G11C2207/105G11C2207/2254
    • An active termination circuit (90) is used to set the input impedance of a plurality of input terminals. Each of the input terminals is coupled to a supply voltage through at least one PMOS transistor and to ground through at least one NMOS transistor. The impedances of the transistors are controlled by a control circuit (110) that generates a first control signal to set the impedance of another PMOS transistor (134) to be equal to a first predetermined resistance, and generates a second control signal to set the impedance of another NMOS transistor (144) to be equal to a second predetermined resistance. The first control signal is used to control all of the PMOS transistors and the second control signal is used to control all of the NMOS transistors. As a result, the PMOS and NMOS transistors coupled to each input terminal have impedances corresponding to the first and second resistances, respectively.
    • 有源终端电路(90)用于设定多个输入端的输入阻抗。 每个输入端通过至少一个PMOS晶体管耦合到电源电压,并通过至少一个NMOS晶体管接地。 晶体管的阻抗由产生第一控制信号以将另一PMOS晶体管(134)的阻抗设置为等于第一预定电阻的控制电路(110)来控制,并产生第二控制信号以设置阻抗 的另一NMOS晶体管(144)等于第二预定电阻。 第一控制信号用于控制所有PMOS晶体管,第二控制信号用于控制所有NMOS晶体管。 结果,耦合到每个输入端的PMOS和NMOS晶体管分别具有对应于第一和第二电阻的阻抗。
    • 100. 发明申请
    • FUSE PROGRAMMABLE I/O ORGANIZATION
    • 保险丝可编程I / O组织
    • WO2003012795A2
    • 2003-02-13
    • PCT/EP2002/008560
    • 2002-07-31
    • INFINEON TECHNOLOGIES AG
    • FRANKOWSKY, GerdVASQUEZ, Barbara
    • G11C29/00
    • G11C7/1045G11C2207/105G11C2207/2254
    • Circuitry using fuse and anti-fuse latches (62) for selecting the number of input/output channels (98, 109) after encapsulation is disclosed. The various embodiments allow conventional bond pads (14, 16, 18) to be used for initial selection of the number of input/output channels prior to encapsulation. However, by providing different selection signals (52, 54), the number of input/output channels may be changed by the user at any time after encapsulation. Other embodiments employ "enable" latch circuits (133,135) allow the initial selection by the users at any time after encapsulation, and then at least one more subsequent selection.
    • 公开了使用熔断器和反熔丝锁存器(62)进行封装后选择输入/输出通道数(98,109)的电路。 各种实施例允许传统的接合焊盘(14,16,18)用于在封装之前的输入/输出通道的数量的初始选择。 然而,通过提供不同的选择信号(52,54),输入/输出通道的数量可以由用户在封装之后的任何时间改变。 其他实施例使用“使能”锁存电路(133,135)允许用户在封装之后的任何时间进行初始选择,然后进行至少一个以后的选择。