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    • 1. 发明申请
    • PLASMA SOURCE
    • 等离子体源
    • WO2009151270A3
    • 2010-03-11
    • PCT/KR2009003107
    • 2009-06-10
    • NEST CORPKIM YOUNG
    • KIM YOUNG
    • H05H1/34
    • H05H1/46H01J37/321
    • The present invention relates to a plasma source and comprises a bar-shaped core, m (wherein m is a positive integer) number of hubs, and a main coil. The hubs are extended a certain length in a horizontal spiral from the end portion of the core and are arranged symmetrically to each other. The main coil is continuously extended from the end portion of each hub and winds a/m times (wherein a and m are positive integers) in a horizontal spiral, and winds a/m times in a horizontal spiral once again after being horizontally extended a certain length, and then the horizontal extension and a/m-times winding are repeated several times in the main coil. Therefore, the present invention contributes to the uniformity of the process by inducing uniform magnetic and electric fields.
    • 等离子体源技术领域本发明涉及等离子体源,并且包括棒状芯,m(其中m为正整数)的毂和主线圈。 轮毂从芯部的端部以水平螺旋形延伸一定长度并且彼此对称地布置。 主线圈从每个轮毂的端部连续延伸,并以水平螺旋方式a / m次(其中a和m为正整数),并在水平延伸一次之后再次以水平螺旋方向一次/ m次 一定长度,然后在主线圈中重复多次水平延伸和a / m次绕组。 因此,本发明通过诱导均匀的磁场和电场来有助于工艺的均匀性。
    • 2. 发明申请
    • ETCHING METHOD FOR NEXT GENERATION SEMICONDUCTOR PROCESS
    • 下一代半导体工艺的蚀刻方法
    • WO2008156282A3
    • 2009-02-26
    • PCT/KR2008003411
    • 2008-06-17
    • NEST CORPKIM YOUNG
    • KIM YOUNG
    • H01L21/3065
    • H01L21/76816H01L21/31116
    • Disclosed is an etching method for a next generation semiconductor etching process including a breakthrough step, a main etch step, and an over etch step, the etching method including the steps of (a) setting a range of at least one of process parameters including a flow rate, pressure, temperature, magnetic field, and RF power in at least one of the breakthrough, main etch, and over etch steps; and (b) gradually changing the corresponding process parameter linearly or non- linearly over time within the set range. During a next generation semiconductor process, the etch rate, etch profile, selectivity, and contact etching process performance regarding the top/bottom CD are improved substantially, making it is possible to overcome the etch limit of the contact CD that is gradually becoming smaller and deeper.
    • 公开了一种用于下一代半导体蚀刻工艺的蚀刻方法,其包括穿透步骤,主蚀刻步骤和过蚀刻步骤,所述蚀刻方法包括以下步骤:(a)设置至少一个工艺参数的范围,包括 至少一个穿透,主蚀刻和过蚀刻步骤中的流速,压力,温度,磁场和RF功率; 和(b)在设定范围内随时间线性或非线性地逐渐改变对应的过程参数。 在下一代半导体工艺中,关于顶部/底部CD的蚀刻速率,蚀刻曲线,选择性和接触蚀刻工艺性能得到显着改善,使得有可能克服逐渐变小的接触CD的蚀刻极限, 更深。
    • 7. 发明申请
    • TRANSMISSION AND HANDLING OF THREE-DIMENSIONAL VIDEO CONTENT
    • 传输和处理三维视频内容
    • WO2011084429A2
    • 2011-07-14
    • PCT/US2010060333
    • 2010-12-14
    • SILICON IMAGE INCCHOI HOONKIM DAEKYEUNGYANG WOOSEUNGKIM YOUNGPARK JEOONG SUNG
    • CHOI HOONKIM DAEKYEUNGYANG WOOSEUNGKIM YOUNGPARK JEOONG SUNG
    • H04N13/00
    • H04N13/0059H04N13/0051H04N19/597
    • Embodiments of the invention are generally directed to transmission and handling of three-dimensional video content. An embodiment of a method includes receiving a multimedia data stream including video data utilizing an interface protocol and determining that the received video data includes three-dimensional (3D) video data, where each frame of the video data includes a first vertical synchronization (Vsync) signal prior to an active data region, the active data region including a first data region and a second data region. The method further includes converting the 3D video data from a 3D data format to a two-dimensional (2D) video format, where converting the 3D video data includes identifying a region between the first data region and the second data region, inserting a second Vsync signal between the first data region and the second data region, and providing an identifier to distinguish between the first data region and the second data region.
    • 本发明的实施例通常涉及三维视频内容的传输和处理。 一种方法的实施例包括:利用接口协议接收包括视频数据的多媒体数据流,并确定所接收的视频数据包括三维(3D)视频数据,其中视频数据的每帧包括第一垂直同步(Vsync) 信号,所述有效数据区域包括第一数据区域和第二数据区域。 该方法还包括将3D视频数据从3D数据格式转换为二维(2D)视频格式,其中转换3D视频数据包括识别第一数据区域和第二数据区域之间的区域,将第二Vsync 在第一数据区域和第二数据区域之间的信号,并提供用于区分第一数据区域和第二数据区域的标识符。