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    • 1. 发明授权
    • Current carrying structure using voltage switchable dielectric material
    • 使用可开关电介质材料的载流结构
    • US06797145B2
    • 2004-09-28
    • US10315496
    • 2002-12-09
    • Lex Kosowsky
    • Lex Kosowsky
    • C25D548
    • H05K1/0254C25D5/54H05K1/0373H05K1/167H05K3/188H05K3/423H05K3/426H05K2201/0215H05K2201/0738H05K2203/105Y10T29/49117Y10T29/49126Y10T29/49128Y10T29/49155
    • An electrochemical processing method is provided for forming a current carrying device for semiconductor chip packaging and similar applications. The method comprises selecting sections of a substrate to carry current wherein a selected section is at least partly covered with a voltage switchable dielectric material, rendering the voltage switchable dielectric material conductive, and electrochemically forming a current carrying material directly on the voltage switchable dielectric material. The voltage switchable dielectric material can have a characteristic voltage, such that when a voltage having a magnitude exceeding the characteristic voltage is applied to the voltage switchable dielectric material, the voltage switchable dielectric material switches from a dielectric material to a conductive material. When conductive, the voltage switchable dielectric material is amenable to electrochemical processing such as electroplating.
    • 提供一种用于形成用于半导体芯片封装的载流装置和类似应用的电化学处理方法。 该方法包括选择衬底的部分以承载电流,其中所选择的部分至少部分地被可开关电介质材料覆盖,使得电压可切换电介质材料导电,并且电化学地在可开关电介质材料上直接形成载流材料​​。 电压可切换介电材料可以具有特征电压,使得当具有超过特征电压的电压的电压被施加到可开关电介质材料时,可切换电介质材料从电介质材料切换到导电材料。 导电时,电压可切换介电材料适用于诸如电镀的电化学处理。
    • 3. 发明授权
    • Apparatus and method for plating wafers, substrates and other articles
    • 用于电镀晶片,基板和其他物品的装置和方法
    • US06267862B1
    • 2001-07-31
    • US09639029
    • 2000-08-15
    • Robert KaufmanGary C. Downes
    • Robert KaufmanGary C. Downes
    • C25D548
    • H01L21/2885C25D7/123C25D17/001C25D17/008Y10S204/07
    • A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.
    • 公开了一种电镀装置和方法,其特别可用于改善电镀速率,改善通孔的电镀,改善跨晶片表面的电镀沉积的均匀性,并最小化对晶片的损伤。 关于提高电镀速度和通孔的电镀,电镀装置和方法将晶片浸入电镀液浴中,并且将电镀液持续地引向晶片表面。 将晶片浸入电镀液浴中可以减少通孔内捕获的气穴的发生,从而使其更容易固定。 电镀流体朝向晶片表面的连续引导增加了离子浓度梯度,这又提高了电镀速率。
    • 8. 发明授权
    • Prevention of marine encrustation on bronze propellers
    • 防止海洋结垢在青铜螺旋桨上
    • US06521114B1
    • 2003-02-18
    • US09242534
    • 1999-05-11
    • Ronald Kempin
    • Ronald Kempin
    • C25D548
    • C23C28/322B63H1/28C23C22/63C23C28/345
    • From the time that they are immersed into a marine environment, bronze propellers are prone to attack by marine organisms, such as barnacles, coral and algae, which attach themselves to the bronze metallic surface, creating lumps on the propeller, which adversely affect its balance and cause impedance and vibration of the propeller and its boat in the water. Anti-fouling paints are either too toxic for the marine environment or lack smoothness on the surface. These problems have been overcome by polishing the propeller to prepare it for electroplating, cleansing to remove dirt and grease, electroplating with copper, followed by spraying with a standard solution (5%) of sodium hypochlorite and sodium chloride and allowing sufficient time for a reaction of the hypochlorite solution with the copper to form a firmly adhering conversion coating of basic cupric chloride. The coating is blue-green in color.
    • 从浸入海洋环境的时候,青铜螺旋桨容易受海洋生物侵袭,例如藤壶,珊瑚和藻类,它们附着在青铜金属表面,在螺旋桨上产生不利影响其平衡的块状物 并引起螺旋桨及其船在水中的阻抗和振动。 防污涂料对海洋环境毒性太大或表面光滑度不高。 通过抛光螺旋桨来准备电镀,清洁以除去污垢和油脂,用铜电镀,然后用标准溶液(5%)次氯酸钠和氯化钠喷雾并允许足够的反应时间来克服这些问题。 的次氯酸盐溶液与铜形成基本氯化铜的牢固粘附转化涂层。 涂层是蓝绿色的。
    • 9. 发明授权
    • Process for the removal of galvanic electrolytic residues from electrode frames or electrode frame webs with fiber structure
    • 从具有纤维结构的电极框架或电极框架网中去除电镀电解残渣的工艺
    • US06428674B1
    • 2002-08-06
    • US09698288
    • 2000-10-30
    • Otwin ImhofHolger KistrupKarl-Ernst Noreikat
    • Otwin ImhofHolger KistrupKarl-Ernst Noreikat
    • C25D548
    • H01M4/806C25D5/48H01M4/80
    • A process for the removal of galvanic electrolytic residues from galvanically reinforced fiber structure frames, where the fiber structure frame is produced through chemical metallization of a textile substrate based on fleeces or felts made of synthetic fibers and then through galvanic reinforcement of the metallized textile substrate in a galvanic bath containing a galvanic electrolyte. The invention provides that the galvanic electrolytic residues are removed by suction from the fiber structure frame. The fiber structure frame then makes contact at least once under high pressure with the wash liquid in a wash station, and subsequently the wash liquid is removed by suction from the fiber structure frame. In order to remove by suction, the galvanic electrolytic residues or the wash liquid, a belt-shaped porous supporting device is inserted between the suction port and a main area of the fiber structure frame.
    • 一种用于从电加强纤维结构框架去除电解电解残余物的方法,其中纤维结构框架是通过基于由合成纤维制成的绒毛或毡制成的织物基材的化学金属化制造的,然后通过金属化织物基材的电加强 含有电解电解质的电镀浴。 本发明提供通过从纤维结构框架抽吸除去电解电解残余物。 然后纤维结构框架在高压下与洗涤站中的洗涤液体接触至少一次,随后通过抽吸从纤维结构框架去除洗涤液体。 为了通过抽吸除去电解电解残余物或洗涤液,带状多孔支撑装置插入在吸入口和纤维结构框架的主区域之间。
    • 10. 发明授权
    • Method for a patterned etch with electrolytically grown mask
    • 具有电解生长掩模的图案化蚀刻的方法
    • US06224738B1
    • 2001-05-01
    • US09437737
    • 1999-11-09
    • Katherine Crawford SudduthThomas Flavian Strange
    • Katherine Crawford SudduthThomas Flavian Strange
    • C25D548
    • H01G9/0032C25D11/06C25D11/18C25F3/14H01G9/055
    • This present invention is directed to a method of etching anodic foil for electrolytic capacitors and provides a method of electrolytically growing a porous oxide mask on a surface of a high purity etchable strip of anodic foil for forming etch tunnels at strategic locations on the foil. Unetched high purity aluminum foil is placed in a prepared electrolyte doped with chloride. By passing current through the foil, a porous oxide mask is formed on the surface of the anode foil, with an optimized pore spacing. This oxide mask is then partially removed with a stripping agent in order to expose the underlying anode foil at the bottom of the mask pores to the etch solution. The mask is not removed completely, and the anode foil is exposed only at the pore sites. The foil can then be etched using a conventional etch solution. Etch pits and tunnels form only at the pore sites. The tunnel density is increased by 100%-200% over conventional etching using the described process, thereby increasing the foil capacitance by 100 to 200%.
    • 本发明涉及蚀刻用于电解电容器的阳极箔的方法,并且提供了在高纯度可蚀刻的阳极箔的表面上电解生长多孔氧化物掩膜的方法,用于在箔上的战略位置形成蚀刻隧道。 将未蚀刻的高纯度铝箔放置在掺有氯化物的制备的电解质中。 通过使电流通过箔,在阳极箔的表面上形成多孔氧化物掩模,并具有优化的孔隙。 然后用剥离剂部分地除去该氧化物掩模,以将掩模孔底部的底层阳极箔暴露于蚀刻溶液。 掩模不能完全去除,阳极箔仅在孔部位露出。 然后可以使用常规蚀刻溶液蚀刻箔。 蚀刻坑和隧道仅在孔隙位置形成。 使用所述方法,隧道密度比常规蚀刻增加100%-200%,从而将箔电容增加100%至200%。