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1. 发明授权

US06715497B2 Treatment to eliminate polysilicon defects induced by metallic contaminants 失效
标题翻译：处理以消除由金属污染物引起的多晶硅缺陷
公开(公告)号：US06715497B2
公开(公告)日：2004-04-06
申请号：US09753283
申请日：2001-01-02
申请人： Brian P. Conchieri , David D. Dussault , Mousa H. Ishaq
发明人： Brian P. Conchieri , David D. Dussault , Mousa H. Ishaq
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B7/00 , B08B7/0071 , H01L21/3221
摘要： A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminants on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminants on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.
摘要翻译：提供了一种方法和装置，用于通过将可能在其表面上具有污染物的半导体衬底加热到集成封闭系统内的升高温度，同时清洗半导体衬底的表面上来消除污染物，包括金属和/或含烃污染物综合封闭系统含有含氯气体。在升高的温度下，氯从含氯气体中解离并与衬底表面上的污染物反应，形成具有这种污染物的挥发性氯化物副产物，其从基本上封闭的系统中除去，同时衬底被连续加热并用氯 - 含气。随后，将衬底移动到集成闭合系统内的冷却室，并冷却以提供具有干净表面的半导体衬底。

2. 发明授权

US06855207B2 Apparatus and system for eliminating contaminants on a substrate surface 失效
标题翻译：用于消除基材表面污染物的装置和系统
公开(公告)号：US06855207B2
公开(公告)日：2005-02-15
申请号：US10732578
申请日：2003-12-10
申请人： Brian P. Conchieri , David D. Dussault , Mousa H. Ishaq
发明人： Brian P. Conchieri , David D. Dussault , Mousa H. Ishaq
IPC分类号： B08B7/00 , H01L21/306 , H01L21/322 , H01L21/00
CPC分类号： H01L21/02046 , B08B7/00 , B08B7/0071 , H01L21/3221
摘要： An intergrated closed apparatus and system for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate. The apparatus and system include a heating chamber for heating the contaminated substrate to an elevated temperature, and an input line for purging the chamber with a chlorine-containing gas. The chlorine dissociates from the chlorine-containing gas, reacts with the contaminates, and forms volatile chloride byproducts which are removed from the heating chamber via an output line. A cooling chamber of the apparatus and system having an input line for providing a gas therein cools the substrate. A workpiece holds the substrate, which in turn, is held in position by a pedestal. The pedestal is in contact with a door that seals the closed apparatus and system, whereby the door transfers the substrate from the heating chamber to the cooling chamber, and vice versa.
摘要翻译：一种用于消除在半导体衬底的表面上的包含金属和/或含烃污染物的污染物的集成封闭装置和系统。该装置和系统包括用于将被污染的基底加热至高温的加热室，以及用含氯气体吹扫室的输入管线。氯气与含氯气体分离，与污染物反应，形成挥发性氯化物副产物，通过输出管路从加热室中除去。具有用于提供气体的输入线的装置和系统的冷却室冷却基板。工件保持衬底，衬底又由基座保持就位。基座与密封装置和系统的门接触，由此门将基板从加热室传送到冷却室，反之亦然。

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