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1. 发明授权

US09607940B2 Semiconductor device 有权
公开(公告)号：US09607940B2
公开(公告)日：2017-03-28
申请号：US14901424
申请日：2013-07-05
申请人： Renesas Electronics Corporation
发明人： Yuichi Yato , Hiroi Oka , Noriko Okunishi , Keita Takada
IPC分类号： H01L23/00 , H01L23/498 , H01L23/13 , H01L23/31
CPC分类号： H01L23/49513 , H01L21/565 , H01L23/13 , H01L23/16 , H01L23/24 , H01L23/3121 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49541 , H01L23/49548 , H01L23/49562 , H01L23/49582 , H01L23/49805 , H01L23/49844 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/77 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37147 , H01L2224/40091 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2224/48624 , H01L2224/48644 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/743 , H01L2224/83192 , H01L2224/83439 , H01L2224/8385 , H01L2224/83862 , H01L2224/84205 , H01L2224/84439 , H01L2224/8501 , H01L2224/85181 , H01L2224/85205 , H01L2224/85439 , H01L2224/92157 , H01L2224/92247 , H01L2924/00014 , H01L2924/1301 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2924/00 , H01L2924/0665 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.

2. 发明申请

US20160204057A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160204057A1
公开(公告)日：2016-07-14
申请号：US14901424
申请日：2013-07-05
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Yuichi YATO , Hiroi OKA , Noriko OKUNISHI , Keita TAKADA
IPC分类号： H01L23/498 , H01L23/31 , H01L23/13
CPC分类号： H01L23/49513 , H01L21/565 , H01L23/13 , H01L23/16 , H01L23/24 , H01L23/3121 , H01L23/3142 , H01L23/4952 , H01L23/49524 , H01L23/49541 , H01L23/49548 , H01L23/49562 , H01L23/49582 , H01L23/49805 , H01L23/49844 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/743 , H01L24/77 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/37147 , H01L2224/40091 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48247 , H01L2224/48624 , H01L2224/48644 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/743 , H01L2224/83192 , H01L2224/83439 , H01L2224/8385 , H01L2224/83862 , H01L2224/84205 , H01L2224/84439 , H01L2224/8501 , H01L2224/85181 , H01L2224/85205 , H01L2224/85439 , H01L2224/92157 , H01L2224/92247 , H01L2924/00014 , H01L2924/1301 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2924/00 , H01L2924/0665 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.
摘要翻译：根据实施例的半导体器件是半导体器件，其中安装在芯片安装部分上的半导体芯片被树脂密封，并且第一构件固定到半导体芯片的周边部分与周边部分之间的芯片安装表面侧的芯片安装部分。此外，第一构件被树脂密封。此外，芯片安装部分的第一方向的第一部分的长度在平面图中大于半导体芯片沿第一方向的长度。

3. 发明授权

US08987021B2 Manufacturing method of light-emitting device 有权
标题翻译：发光装置的制造方法
公开(公告)号：US08987021B2
公开(公告)日：2015-03-24
申请号：US13911450
申请日：2013-06-06
申请人： Toyoda Gosei Co., Ltd.
发明人： Mineo Okuyama
IPC分类号： H01L33/62 , H01L23/00
CPC分类号： H01L33/62 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05144 , H01L2224/05655 , H01L2224/05681 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48463 , H01L2224/48655 , H01L2224/48681 , H01L2224/49107 , H01L2224/49113 , H01L2224/73265 , H01L2224/83862 , H01L2224/8501 , H01L2224/85013 , H01L2224/85205 , H01L2224/85375 , H01L2224/92247 , H01L2924/181 , H01L2933/0033 , H01L2924/00014 , H01L2924/00012 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/0715 , H01L2924/00
摘要： A manufacturing method of a light-emitting device includes: a die-bonding process in which a semiconductor light emitting element is placed on a bonding target member via an adhesive containing a silicone resin so that a surface opposite to an exposure surface faces the bonding target member, and the adhesive is heated to bond the semiconductor light emitting element to the bonding target member; and a wire-bonding process in which a wire is connected to the exposure surface. The semiconductor light emitting element includes a laminated semiconductor layer having a light emitting layer and an electrode including a metal layer containing Au and provided on the laminated semiconductor layer and a covering layer containing Ni or Ta and covering the metal layer, the thickness of the covering layer being set smaller than 100 nm and the exposure surface to expose the covering layer to the outside being formed.
摘要翻译：发光装置的制造方法包括：芯片接合工艺，其中半导体发光元件通过含有硅树脂的粘合剂放置在接合目标构件上，使得与曝光表面相对的表面面向接合靶并且粘合剂被加热以将半导体发光元件结合到接合目标构件; 以及将导线连接到曝光表面的引线接合工艺。半导体发光元件包括具有发光层的层叠半导体层和包含Au的金属层并设置在层叠半导体层上的电极和包含Ni或Ta并覆盖金属层的覆盖层，覆盖层的厚度层被设定为小于100nm，并且曝光表面将覆盖层暴露于形成的外部。

4. 发明授权

US08354739B2 Thin semiconductor package and method for manufacturing same 有权
标题翻译：薄半导体封装及其制造方法
公开(公告)号：US08354739B2
公开(公告)日：2013-01-15
申请号：US13092159
申请日：2011-04-22
申请人： Yeqing Su , Zhigang Bai , Weimin Chen , Wei Shen , Jianhong Wang , Baoguan Yin , Wanming Yu
发明人： Yeqing Su , Zhigang Bai , Weimin Chen , Wei Shen , Jianhong Wang , Baoguan Yin , Wanming Yu
IPC分类号： H01L23/495 , H01L21/28
CPC分类号： H01L21/6835 , H01L21/568 , H01L23/3107 , H01L23/49541 , H01L24/48 , H01L24/85 , H01L2224/05554 , H01L2224/48091 , H01L2224/48247 , H01L2224/8501 , H01L2924/00014 , H01L2924/18165 , H01L2224/45099
摘要： A method for manufacturing a thin semiconductor package includes providing a lead frame with a removable substrate that has an attaching surface attached to a first surface of the lead frame. The lead frame is formed from an electrically conductive sheet and has leads that extend inwardly from a lead frame boundary towards a central region of the lead frame. A semiconductor die is mounted on the removable substrate at the central region. The semiconductor die has a connection pad surface with die pads on it, and the connection pad surface is attached to the attaching surface of the removable substrate. The lead frame and die are encapsulated with a first encapsulant so that the lead frame is sandwiched between the first encapsulant and the removable substrate. The removable substrate is removed from the lead frame to expose the first surface of the lead frame and then the die pads are electrically connected to respective ones of the leads. The die and lead frame then are encapsulated with a second encapsulant so that the lead frame and die are sandwiched between the first and second encapsulants. Part of the first encapsulant is then removed to reduce the thickness of the package and expose the leads.
摘要翻译：一种用于制造薄半导体封装的方法，包括：提供具有可移除基板的引线框架，该可移除基板具有附接到引线框架的第一表面的附接表面。引线框架由导电片形成，并且具有从引线框架边界朝向引线框架的中心区域向内延伸的引线。半导体管芯安装在中央区域的可拆卸基板上。半导体管芯具有连接焊盘表面，其上具有焊盘，并且连接焊盘表面附接到可移除基板的附接表面。引线框架和管芯用第一密封剂封装，使得引线框架夹在第一密封剂和可移除基板之间。将可移除基板从引线框架移除以露出引线框架的第一表面，然后将管芯焊盘电连接到相应的引线。然后，管芯和引线框架用第二密封剂封装，使得引线框架和管芯夹在第一和第二密封剂之间。然后去除部分第一密封剂以减小包装的厚度并暴露引线。

5. 发明授权

US08283593B2 Wire cleaning guide 失效
标题翻译：电线清洁指南
公开(公告)号：US08283593B2
公开(公告)日：2012-10-09
申请号：US12069984
申请日：2008-02-14
申请人： Masayuki Horino , Kazuo Fujita
发明人： Masayuki Horino , Kazuo Fujita
IPC分类号： B23K10/00
CPC分类号： B08B7/0035 , B65H57/00 , B65H2301/5115 , H01L24/45 , H01L24/78 , H01L24/80 , H01L24/85 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/78301 , H01L2224/786 , H01L2224/85009 , H01L2224/8501 , H01L2224/85013 , H01L2224/851 , H01L2224/85205 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/181 , H01L2924/30107 , H01L2224/48 , H01L2924/00 , H01L2924/00015 , H01L2224/45147 , H01L2924/01049
摘要： A wire cleaning guide for guiding a wire in a feed direction and to clean the wire, including a gas supply nozzle for supplying plasma generating gas, a plasma generating chamber with plasma generating gas supplied from the gas supply nozzle thereto for transforming the plasma generating gas into plasma by energizing a bonding wire that passes there through to clean the wire by means of the plasma gas, and wire-feeder-side and bonding-tool-side guide holes for guiding the wire in the feed direction, the diameter of the wire-feeder-side guide hole is greater than that of the bonding-tool-side guide hole so that the outflow rate of gas after wire cleaning flowing between the wire-feeder-side guide hole and the wire is greater than that of gas after wire cleaning flowing between the bonding-tool-side guide hole and the wire.
摘要翻译：一种线材清洁导向器，用于沿进给方向引导导线并清洁线材，包括用于供应等离子体产生气体的气体供应喷嘴，具有从气体供应喷嘴供应的等离子体产生气体的等离子体产生室，用于转换等离子体产生气体通过使通过该接合线的接合线通过等离子体气体来清洁电线而进入等离子体，以及用于沿供电方向引导电线的送丝器侧和接合工具侧引导孔，线的直径馈线侧导孔大于接合工具侧引导孔的导线孔，使得在线馈线侧引导孔和线之间的线清洗之后的气体的流出量大于导线后的气体的流出速度在接合工具侧引导孔和线之间流动的清洁。

6. 发明授权

US08097540B2 Method of opening pad in semiconductor device 有权
标题翻译：在半导体器件中打开焊盘的方法
公开(公告)号：US08097540B2
公开(公告)日：2012-01-17
申请号：US12330635
申请日：2008-12-09
申请人： Dae-Heok Kwon
发明人： Dae-Heok Kwon
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L24/05 , H01L24/03 , H01L24/48 , H01L24/85 , H01L2224/04042 , H01L2224/05624 , H01L2224/48 , H01L2224/8501 , H01L2224/85375 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01033 , H01L2924/01067 , H01L2924/01072 , H01L2924/01082 , H01L2924/05042 , H01L2924/00 , H01L2224/45099
摘要： A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on the pad may be removed by heating with molecular vibration and/or microwaves, which may substantially prevent and/or minimize corrosion.
摘要翻译：一种在半导体器件中打开焊盘的方法。可以用垫开口图案作为掩模蚀刻垫上的保护膜。可以通过蚀刻保护膜而在打开的焊盘上进行介电加热。可以通过用分子振动和/或微波加热来除去在垫上含有C和F基团的有机材料，其可以基本上防止和/或最小化腐蚀。

7. 发明申请

US20110316160A1 Semiconductor Arrangement, Semiconductor Module, and Method for Connecting a Semiconductor Chip to a Ceramic Substrate 有权
标题翻译：半导体布置，半导体模块和将半导体芯片连接到陶瓷基板的方法
公开(公告)号：US20110316160A1
公开(公告)日：2011-12-29
申请号：US13226981
申请日：2011-09-07
申请人： Dirk Siepe , Reinhold Bayerer
发明人： Dirk Siepe , Reinhold Bayerer
IPC分类号： H01L23/485
CPC分类号： H01L23/3735 , H01L24/03 , H01L24/05 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/83 , H01L24/85 , H01L25/072 , H01L2224/04042 , H01L2224/05082 , H01L2224/05171 , H01L2224/05172 , H01L2224/05181 , H01L2224/05184 , H01L2224/05647 , H01L2224/05666 , H01L2224/32225 , H01L2224/32245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48491 , H01L2224/48747 , H01L2224/48766 , H01L2224/48847 , H01L2224/48866 , H01L2224/49 , H01L2224/73265 , H01L2224/78313 , H01L2224/82105 , H01L2224/82106 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/8501 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/0105 , H01L2924/0106 , H01L2924/01068 , H01L2924/0107 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/13055 , H01L2924/15787 , H01L2924/2076 , H01L2924/00014 , H01L2924/00012 , H01L2924/00 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205
摘要： A semiconductor arrangement includes a silicon body having a top surface and a bottom surface, and a thick metal layer arranged on the top surface of the silicon body. The thick metal layer has a bonding surface facing away from the top surface of the silicon body. A bonding wire or a ribbon is bonded to the thick metal layer at the bonding surface of the thick metal layer. The thickness of the thick metal layer is at least 10 micrometers (μm), the thick metal layer comprises copper or a copper alloy, and the bonding wire or ribbon comprises copper or a copper-based material.
摘要翻译：半导体装置包括具有顶表面和底表面的硅体，以及布置在硅体顶表面上的厚金属层。厚金属层具有背离硅体的顶表面的接合表面。接合线或带在厚金属层的接合面接合到厚金属层。厚金属层的厚度为至少10微米（μm），厚金属层包括铜或铜合金，并且接合线或带包括铜或铜基材料。

8. 发明授权

US07964495B2 Method of manufacturing complementary metal oxide semiconductor image sensor 失效
标题翻译：互补金属氧化物半导体图像传感器的制造方法
公开(公告)号：US07964495B2
公开(公告)日：2011-06-21
申请号：US11869498
申请日：2007-10-09
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L21/3213
CPC分类号： H01L27/14636 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/14621 , H01L27/14627 , H01L27/14683 , H01L2224/02166 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/05666 , H01L2224/8501 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/12043 , H01L2924/13091 , H01L2924/19041 , Y10S438/906 , H01L2924/00
摘要： A method of manufacturing a CMOS image sensor manufacturing includes forming a plurality of metal pads over a semiconductor substrate; electrically connecting the metal pads to lower conductive film patterns of multi-layer metal wires using metal contacts; depositing an insulation film over the metal pads; patterning the insulation film to expose at least a portion of the upper surface of the metal pads; and removing impurities from an uppermost surface of the metal pads.
摘要翻译：制造CMOS图像传感器的制造方法包括在半导体衬底上形成多个金属焊盘; 使用金属触点将金属焊盘电连接到多层金属线的下导电膜图案; 在金属垫上沉积绝缘膜; 图案化绝缘膜以暴露金属垫的上表面的至少一部分; 以及从所述金属焊盘的最上表面去除杂质。

9. 发明申请

US20090068847A1 METHODS FOR REMOVING CONTAMINANTS FROM ALUMINUM-COMPRISING BOND PADS AND INTEGRATED CIRCUITS THEREFROM 有权
标题翻译：从包含铝的粘结垫和集成电路中去除污染物的方法
公开(公告)号：US20090068847A1
公开(公告)日：2009-03-12
申请号：US12208608
申请日：2008-09-11
申请人： Alfred J. Griffin, JR. , Lisa A. Fritz , Lin Li , Lee Alan Stringer , Neel A. Bhatt , John Paul Campbell , Stephen Arlon Meisner , Charles Leighton
发明人： Alfred J. Griffin, JR. , Lisa A. Fritz , Lin Li , Lee Alan Stringer , Neel A. Bhatt , John Paul Campbell , Stephen Arlon Meisner , Charles Leighton
IPC分类号： H01L21/71
CPC分类号： H01L21/02063 , H01L21/02068 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05624 , H01L2224/45144 , H01L2224/48624 , H01L2224/8501 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： Methods for removing contaminants from a semiconductor device that includes a plurality of aluminum-comprising bond pads on a semiconductor surface of a substrate. A plurality of aluminum-including bond pads are formed on the semiconductor surface of the substrate. A patterned passivation layer is then formed on the semiconductor surface, wherein the patterned passivation layer provides an exposed area for the plurality of bond pads. Wet etching with a basic etch solution is used to etch a surface of the exposed area of the aluminum-including bond pads, wherein the wet etching removes at least 100 Angstroms from the surface of the bond pads to form a cleaned surface.
摘要翻译：从半导体器件去除污染物的方法，其包括在衬底的半导体表面上的多个含铝键合焊盘。在基板的半导体表面上形成多个含铝键合焊盘。然后在半导体表面上形成图案化的钝化层，其中图案化的钝化层为多个接合焊盘提供暴露的区域。使用基本蚀刻溶液的湿蚀刻蚀刻含铝键合焊盘的暴露区域的表面，其中湿蚀刻从接合焊盘的表面去除至少100埃以形成清洁的表面。

10. 发明申请

US20060051951A1 Method of clearing electrical contact pads in thin film sealed OLED devices 有权
标题翻译：在薄膜密封OLED器件中清除电接触焊盘的方法
公开(公告)号：US20060051951A1
公开(公告)日：2006-03-09
申请号：US11169154
申请日：2005-06-27
申请人： Amalkumar Ghosh , Yachin Liu , Hua Ji
发明人： Amalkumar Ghosh , Yachin Liu , Hua Ji
IPC分类号： H01L21/44 , H01L21/302
CPC分类号： H01L21/02098 , H01L24/05 , H01L24/85 , H01L27/3297 , H01L2224/8501 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2224/48 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A process of cleaning wire bond pads associated with OLED devices, including the steps of depositing on the wire bond pads one or more layers of ablatable material, and ablating the one or more layers with a laser, thereby exposing a clean wire bond pad.
摘要翻译：清洁与OLED器件相关联的引线接合焊盘的过程，包括以下步骤：在引线接合焊盘上沉积一层或多层可消融材料，以及用激光烧蚀一层或多层，从而暴露清洁的焊线焊盘。

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