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1. 发明授权

US4724038A Process for preparing single crystal binary metal oxides of improved purity 失效
标题翻译：制备纯度提高的单晶二元金属氧化物的方法
公开(公告)号：US4724038A
公开(公告)日：1988-02-09
申请号：US870202
申请日：1986-06-02
申请人： Ricardo C. Pastor , Luisa E. Gorre
发明人： Ricardo C. Pastor , Luisa E. Gorre
IPC分类号： C30B15/00 , C30B29/30 , C30B29/32 , B01J17/18
CPC分类号： C30B15/00 , C30B29/30 , C30B29/32 , Y10S117/906 , Y10S117/912
摘要： A method is disclosed for the growth of single crystals of a binary metal oxides of the formula ABO.sub.3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO.sub.3 crystal is prepared using a basic oxide or carbonate of A and a stoichiometric excess of an acidic oxide of B. The mixture is heated at an elevated temperature to form a melt and is thereafter exposed to a reactive atmosphere of a mixture of gaseous carbon monoxide and carbon dioxide. Crystal growth from the melt is effected by a top-seeded crystal pulling technique.
摘要翻译：公开了用于生长式ABO 3的二元金属氧化物的单晶的方法，其中A是碱金属或碱土金属，B是至少一种选自钛，铌和钽的元素。使用A的碱性氧化物或碳酸酯和B的化学计量过量的酸性氧化物制备包含ABO 3晶体的组成成分的混合物。将混合物在升高的温度下加热以形成熔体，然后暴露于反应性气态一氧化碳和二氧化碳的混合气氛。来自熔体的晶体生长通过顶部种子晶体拉伸技术实现。

2. 发明授权

US4216186A Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains 失效
标题翻译：用于生长带状晶体而不使晶体受到热冲击诱导应变的方法
公开(公告)号：US4216186A
公开(公告)日：1980-08-05
申请号：US938579
申请日：1978-08-31
申请人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Samuel Berkman , Kyong-Min Kim , Harold E. Temple
发明人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Samuel Berkman , Kyong-Min Kim , Harold E. Temple
IPC分类号： C30B15/08 , C30B15/14 , C30B15/34 , B01J17/18
CPC分类号： C30B15/08 , C30B15/14 , C30B15/34 , Y10S117/90 , Y10S117/91 , Y10T117/1044 , Y10T117/1056 , Y10T117/1068
摘要： In combination with a susceptor particularly suited for use in growing a ribbon crystal employing edge-defined film-fed growth techniques and characterized by a susceptor including a die through which a melt is drawn for forming a crystal ribbon, a pair of jets for directing a stream of fluid coolant along a path extended to impinge on the susceptor in close proximity with the die in non-incident relation with the crystal being grown.
摘要翻译：与特别适合用于生长使用边缘限定薄膜喂养生长技术的带状晶体的感受器组合，并且其特征在于包括用于形成晶体带的熔体被熔化的模具的基座，用于引导流体冷却剂流沿着与被生长的晶体非入射关系而与模具紧密接近的路径延伸以抵接在基座上。

3. 发明授权

US4190487A Reactive atmosphere processing method of crystal growth of alkaline earth chlorides 失效
标题翻译：碱土金属氯化物晶体生长的活性气氛处理方法
公开(公告)号：US4190487A
公开(公告)日：1980-02-26
申请号：US879551
申请日：1978-02-21
申请人： Ricardo C. Pastor , Antonio C. Pastor
发明人： Ricardo C. Pastor , Antonio C. Pastor
IPC分类号： C30B11/00 , B01J17/08 , B01J17/18 , C01B9/02
CPC分类号： C30B11/00 , C30B29/12 , Y10S117/906
摘要： Alkaline earth chloride crystals exhibiting substantially improved physical and optical transmission characteristics are grown from starting powders by a one step Reactive Atmospheric Processing (RAP) method.
摘要翻译：表现出显着改善的物理和光学透射特性的碱土金属氯化物晶体从起始粉末通过一步反应性大气加工（RAP）方法生长。

4. 发明授权

US4187139A Growth of single crystal bismuth silicon oxide 失效
标题翻译：单晶铋氧化硅的生长
公开(公告)号：US4187139A
公开(公告)日：1980-02-05
申请号：US805539
申请日：1977-06-10
申请人： John C. Brice , Owen F. Hill , Ronald G. Pratt
发明人： John C. Brice , Owen F. Hill , Ronald G. Pratt
IPC分类号： C30B11/00 , C30B13/00 , C30B15/00 , G02F1/00 , B01J17/18 , C01G29/00
CPC分类号： G02F1/0018 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/34 , Y10S117/906
摘要： Method of growing single crystal of bismuth silicon oxide from a melt of Bi.sub.x Si O.sub.1.5x+2, in an oxygen containing atmosphere. At the start of crystallization, x has a value of 11.55 to 11.82 or 12.35 to 14.00. The value of x does not have a spread of more than 0.025 throughout the crystal.
摘要翻译：在含氧气氛中从Bix Si O1.5x + 2的熔体生长铋氧化硅单晶的方法。在结晶开始时，x的值为11.55至11.82或12.35至14.00。整个晶体的x值不超过0.025。

5. 发明授权

US4087313A Process and apparatus for preparation of single crystals and textured polycrystals 失效
标题翻译：用于制备单晶和纹理多晶体的方法和设备
公开(公告)号：US4087313A
公开(公告)日：1978-05-02
申请号：US635421
申请日：1975-11-28
申请人： Joseph Beril Milstein
发明人： Joseph Beril Milstein
IPC分类号： C30B15/00 , C30B15/16 , B01J17/18
CPC分类号： C30B15/16 , C30B15/00 , C30B29/52 , Y10T117/1068
摘要： A molten region is formed in a solid material disposed on a cooled hearth capable of rotation. The solid material acts as a crucible for the melt, and single crystals or textured polycrystals may be grown from the molten region, with simultaneous rotation of the hearth and contained solid. The melt is formed in the solid material by one or more electric arcs struck between the material which may behave as an anode, and one or more cathodes which are directed toward the material, so that the electron and plasma flow from the cathodes to the material, produces and maintains the melt.
摘要翻译：熔融区域形成为设置在能够旋转的冷却的炉床上的固体材料。固体材料用作熔体的坩埚，并且单晶或纹理化多晶体可以从熔融区域生长，同时使炉床旋转并包含固体。熔体在固体材料中通过一个或多个电弧形成在可以表现为阳极的材料之间，并且一个或多个阴极指向材料，使得电子和等离子体从阴极流到材料，产生和保持熔体。

6. 发明授权

US4040890A Neodymium oxide doped yttrium aluminum garnet optical fiber 失效
标题翻译：掺钕氧化钇铝石榴石光纤
公开(公告)号：US4040890A
公开(公告)日：1977-08-09
申请号：US591178
申请日：1975-06-27
申请人： Charles Andrew Burrus, Jr. , Julian Stone
发明人： Charles Andrew Burrus, Jr. , Julian Stone
IPC分类号： C30B15/00 , C30B15/16 , B01J17/18 , B01J17/36
CPC分类号： C30B15/16 , C30B15/00 , C30B29/24 , C30B29/60 , Y10S117/902 , Y10S117/904 , Y10T428/2971
摘要： There is disclosed a technique for growing, from a melt, doped single-crystal fibers for use as lasers or other active or passive optical devices of a size that is compatible with proposed optical fiber communications systems. A rod of undoped material has deposited thereon, by mechanical means, a powder or a slurry of a compound of the active ion or other dopant. A melt is formed at the end of the rod with a laser beam and a reduced diameter doped single-crystal fiber is grown or drawn from the melt by pulling with a wire or, when desired crystalline orientation is needed, by pulling with a pointed and oriented seed crystal. The pulling step, at least in the specific case of a neodymium-doped yttrium aluminum garnet (YAG) fiber, is repeated a plurality of times with approximately a 3:1 diameter reduction each time in order to obtain the desired fiber size; but only one deposition of the dopant compound is needed.
摘要翻译：公开了一种用于从用于激光器的熔融掺杂单晶纤维生长的技术，或者用于与所提出的光纤通信系统兼容的尺寸的其它有源或无源光学器件。未掺杂材料棒通过机械方式沉积在活性离子或其它掺杂剂的化合物的粉末或浆料上。在激光束的杆的端部形成熔体，并且通过用线拉动从熔体生长或拉出直径减小的单晶纤维，或者当需要晶体取向时，通过用尖和定向晶种。至少在钕掺杂的钇铝石榴石（YAG）纤维的具体情况下，拉伸步骤重复多次，每次大约减少3:1直径，以获得所需的纤维尺寸; 但是仅需要一次沉积掺杂剂化合物。

7. 发明授权

US4001127A Process of preparing single crystals of strontium barium niobate 失效
标题翻译：制备铌酸钡锶单晶的工艺
公开(公告)号：US4001127A
公开(公告)日：1977-01-04
申请号：US490677
申请日：1974-07-22
申请人： Kouiti Megumi , Kazuyuki Nagatsuma , Yasutoshi Kashiwada , Yoshio Furuhata
发明人： Kouiti Megumi , Kazuyuki Nagatsuma , Yasutoshi Kashiwada , Yoshio Furuhata
IPC分类号： C01G33/00 , C30B15/00 , C30B29/30 , B01J17/18
CPC分类号： C30B15/00 , C30B29/30
摘要： In a process of preparing single crystals of strontium barium niobate of the type wherein melt of a mixture of strontium oxide, barium oxide and niobium pentoxide is prepared and a single crystal of strontium barium niobate is grown from the melt by using a seed crystal, the compositions included in region A or B shown in FIGS. 2 and 3 are used as the ternary compositions of strontium oxide, barium oxide and niobium pentoxide in the melt.
摘要翻译：在制备其中制备氧化锶，氧化钡和五氧化二铌的混合物的熔体的铌酸锶单晶的方法中，使用晶种从熔体生长铌酸锶钡的单晶，包含在图1和图2所示的区域A或B中的组合物。 2和3用作熔体中氧化锶，氧化钡和五氧化二铌的三元组成。

8. 发明授权

US3998687A Technique for growth of thin film lithium niobate by liquid phase epitaxy 失效
标题翻译：通过液相外延生长薄膜铌酸锂的技术
公开(公告)号：US3998687A
公开(公告)日：1976-12-21
申请号：US557106
申请日：1975-03-10
申请人： Albert Anthony Ballman , Ping King Tien
发明人： Albert Anthony Ballman , Ping King Tien
IPC分类号： C30B19/02 , G02B6/13 , B01J17/18
CPC分类号： G02B6/131 , C30B19/02 , C30B29/30
摘要： A liquid phase epitaxial growth technique for growing lithium niobate films on lithium tantalate substrates involves growth from a flux system based on either lithium borate, lithium tungstate, tungsten oxide or potassium tungstate. Optical waveguiding occurs in films grown from the described flux systems.
摘要翻译：用于在钽酸锂衬底上生长铌酸锂薄膜的液相外延生长技术涉及基于硼酸锂，钨酸锂，氧化钨或钨酸钾的助熔剂系统的生长。光波导发生在从所描述的焊剂系统生长的膜中。

9. 发明授权

US3953281A Method and system for growing monocrystalline ingots 失效
标题翻译：生长单晶锭的方法和系统
公开(公告)号：US3953281A
公开(公告)日：1976-04-27
申请号：US483511
申请日：1974-06-27
申请人： Anthony A. Pantusco , Warren J. Pinckney , George R. Santillo, Jr. , Gerard J. Scharff
发明人： Anthony A. Pantusco , Warren J. Pinckney , George R. Santillo, Jr. , Gerard J. Scharff
IPC分类号： C30B15/30 , H01L21/208 , B01J17/18
CPC分类号： C30B15/30 , Y10S117/90 , Y10S117/911 , Y10T117/1072
摘要： A monocrystalline silicon ingot is grown from molten silicon by progressively lifting a monocrystalline seed from the molten silicon, which is disposed within a crucible in a furnace, through mounting the seed on a graphite pull shaft. The pull shaft is surrounded by a bellows, which is connected to a carriage to which the pull shaft also is connected. A seal, which is carried by the bellows structure, seals the pull shaft in its rotary motion. Because the bellows structure and the pull shaft are both connected to the carriage, there is no relative linear motion therebetween so that there is no necessity to seal for linear motion of the pull shaft. A pair of lifting mechanisms is connected to diametrically opposite sides of the carriage to support the carriage and to exert a lifting force on the pull shaft along its longitudinal axis. The crucible also must be raised as the level of the molten silicon is depleted due to the formation of the ingot on the seed at the end of the pull shaft. This is because there is an optimum heating zone, which is an isothermal zone and is relatively small, within the furnace, and it is necessary for the level of the molten silicon to be maintained within this zone. The crucible is lifted through being connected to a carriage, which is supported and lifted by a similar arrangement to that for lifting the carriage to which the pull shaft is connected.
摘要翻译：通过将晶种通过将晶种安装在石墨牵引轴上，逐渐地将单晶种子从熔融硅中放置在炉中的坩埚内，从熔融硅生长单晶硅锭。牵引轴被波纹管包围，波纹管连接到牵引轴也连接到的托架上。由波纹管结构承载的密封件在其旋转运动中密封拉动轴。因为波纹管结构和拉动轴都与滑架相连，所以它们之间没有相对的线性运动，因此不需要密封用于拉动轴的直线运动。一对提升机构连接到滑架的径向相对的两侧，以支撑托架并且沿其纵向轴线在拉动轴上施加提升力。由于在拉杆端部的种子上形成锭，所以坩埚也必须升高，因为熔融硅的水平耗尽。这是因为在炉内存在最佳的加热区，其是等温区并且相对较小，并且熔融硅的水平必须保持在该区内。坩埚通过连接到滑架被提升，托架通过与用于提升牵引轴所连接的托架相似的布置被支撑和提升。

10. 发明授权

US3951729A Method for producing single crystals 失效
标题翻译：单晶生产方法
公开(公告)号：US3951729A
公开(公告)日：1976-04-20
申请号：US432516
申请日：1974-01-11
申请人： Kazumasa Takagi , Tokuumi Fukazawa , Mitsuru Ishii , Seigo Kishino
发明人： Kazumasa Takagi , Tokuumi Fukazawa , Mitsuru Ishii , Seigo Kishino
IPC分类号： C01G15/00 , C30B15/00 , C30B15/20 , H01L21/208 , B01J17/18
CPC分类号： C30B15/00 , C30B29/28 , Y10S117/902
摘要： In growing single crystals of gadolinium gallium garnet, dysprosium gallium garnet and the like according to the Czochralski method, when the velocity of rotation of the crystal during growth of a slender part is made lower than the velocity of rotation of the crystal during growth of a body portion, single crystals free of defects such as dislocation or facet can be obtained.
摘要翻译：在生长单晶钆镓石榴石，镝镓石榴石等时，根据切克劳斯基法，当细长部分生长过程中晶体的旋转速度低于晶体生长期间的旋转速度时主体部分，可以获得没有诸如位错或小面的缺陷的单晶。

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