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1. 发明授权

US08956454B2 Method and device for producing material having a monocrystalline or multicrystalline structure 有权
标题翻译：用于生产具有单晶或多晶结构的材料的方法和装置
公开(公告)号：US08956454B2
公开(公告)日：2015-02-17
申请号：US14110478
申请日：2012-03-21
申请人： Rupert Köckeis
发明人： Rupert Köckeis
IPC分类号： C30B15/02 , C30B15/14 , C30B15/08 , C30B28/10
CPC分类号： C30B15/14 , C30B15/08 , C30B28/10 , Y10S117/91 , Y10T117/1004 , Y10T117/1068
摘要： According to the invention, a device and a method for producing materials having a monocrystalline or multicrystalline structure are provided, in which a container is arranged between two pressure regions and the setting of the height of the melt in the container takes place via the setting of the differential pressure between the pressure regions. As a result, even particulate material can be fed continuously to the container and melted uniformly. Delivery material with high purity can also be pulled out of the container.
摘要翻译：根据本发明，提供了一种用于生产具有单晶或多晶体结构的材料的装置和方法，其中容器布置在两个压力区域之间，并且容器中熔体的高度的设定通过设置压力区域之间的压差。结果，即使颗粒材料可以连续地供给到容器中并且均匀地熔化。高纯度的输送材料也可以从容器中拉出。

2. 发明申请

US20050115491A1 Ion exchange waveguides and methods fabrication 失效
标题翻译：离子交换波导和方法制造
公开(公告)号：US20050115491A1
公开(公告)日：2005-06-02
申请号：US10919695
申请日：2004-08-16
申请人： Lee Burrows
发明人： Lee Burrows
IPC分类号： C30B15/00 , C30B33/00 , G02B6/12 , G02B6/134 , G02F1/035 , C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02 , G02B6/10
CPC分类号： G02F1/035 , C30B15/00 , C30B29/30 , C30B33/00 , G02B6/1345 , G02B2006/12169 , G02F2201/066 , G02F2201/07 , G02F2202/20 , Y10S117/91
摘要： A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance.
摘要翻译：用于制造离子交换波导的方法，如光调制器和其它光波导器件中的铌酸锂或钽酸锂波导，利用加压退火来进一步扩散和限制离子的交换，并且包括使晶体衬底与离子源离子交换，通过将含有铌酸锂或钽酸锂衬底的气体气氛加压到正常大气压下来对衬底进行退火，将衬底加热至约150摄氏度至约1000摄氏度的温度，保持压力和温度以实现更大的离子扩散和限制交换，并以适当的降速率将结构冷却至环境温度。在本发明的另一方面，将与结晶基底相同的化学组成的粉末引入退火处理室中，以在退火期间限制结晶底物从脱气碱土金属氧化物。在本发明的另一方面，提供一种退火容器，其允许结晶基材在粉末存在下进行退火，而不会在退火过程中用粉末污染基材。根据该方法制造的波导显示出优异的漂移性能。

3. 发明申请

US20030024472A1 Wafer produced thereby, and associated methods and devices using the wafer 失效
标题翻译：由此制造的晶片，以及使用晶片的相关方法和装置
公开(公告)号：US20030024472A1
公开(公告)日：2003-02-06
申请号：US09920448
申请日：2001-08-01
申请人： CRYSTAL PHOTONICS, INCORPORATED
发明人： Herbert Paul Maruska , John Joseph Gallagher , Mitch M.C. Chou
IPC分类号： C30B028/12 , C30B023/00 , C30B028/14 , C30B025/00
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , Y10S117/91
摘要： A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cmnull2.
摘要翻译：制造独立的单晶氮化镓（GaN）晶片的方法包括：使用卤化镓反应气体直接在单晶LiAlO 2衬底上形成单晶GaN层，并从单晶中除去单晶LiAlO 2衬底 GaN层制作独立的单晶GaN晶圆。形成单晶GaN层可以包括使用卤化镓反应气体和含氮反应气体通过气相外延（VPE）沉积GaN。由于卤化镓用作反应气体而不是诸如三甲基镓（TMG）的金属有机反应物，所以可以使用提供商业上可接受的快速生长速率的VPE进行GaN层的生长。另外，GaN层整体也没有碳。由于所制造的GaN层是高质量的单晶，因此可能具有小于约107cm -2的缺陷密度。

4. 发明授权

US4603034A Crystal growing system 失效
标题翻译：水晶生长系统
公开(公告)号：US4603034A
公开(公告)日：1986-07-29
申请号：US367626
申请日：1982-04-12
申请人： Earle R. Vickery, III
发明人： Earle R. Vickery, III
IPC分类号： C30B15/08 , C30B15/14 , C30B15/24 , C30B15/10
CPC分类号： C30B15/08 , C30B15/14 , C30B15/24 , Y10S117/91 , Y10T117/1044 , Y10T117/1068
摘要： System for formation of a mineral crystal having a regular cross-sectional shape, including a crucible, a mass of crystal nutrient melt in the crucible, and a cooling element which defines a growing zone on the surface of the nutrient melt.
摘要翻译：用于形成具有规则横截面形状的矿物晶体的系统，包括坩埚，坩埚中的晶体营养物质的块体，以及限定营养物质熔融物表面上的生长区域的冷却元件。

5. 发明授权

US4495155A Modified crucible for the pendant drop method of crystallization 失效
标题翻译：改性坩埚用于悬滴法结晶
公开(公告)号：US4495155A
公开(公告)日：1985-01-22
申请号：US496893
申请日：1983-05-23
申请人： Jean Ricard , Charles Excoffon
发明人： Jean Ricard , Charles Excoffon
IPC分类号： C30B15/00 , C30B15/08 , C30B15/10 , C30B15/24 , C30B29/64
CPC分类号： C30B15/08 , C30B15/007 , C30B15/10 , Y10S117/91 , Y10T117/1052
摘要： A crucible useful for continuous preparation of single crystals with selected crystal orientation or for depositing thin films of crystalline materials such as silica on substrates such as graphite by the pendant drop growth (PDG) method, the crucible base being tapped with one or more capillary bores having a length equal to or greater than the retention height of the molten liquid used to prepare the crystal of film at the temperatures and pressures used, the crucible being improved by "capping" its bottom with a conical baffle plate supported by feet on the bottom of the crucible, the improved crucible providing single crystals having high dimensional regularity and containing no bubbles or unmelted inclusions and the single crystals being broadly useful in jewelry, horology, and electronics.
摘要翻译：一种用于连续制备具有选定晶体取向的单晶或用于通过侧滴生长（PDG）方法在诸如石墨的基底上沉积诸如二氧化硅的结晶材料的薄膜的坩埚，坩埚基底与一个或多个毛细管孔其长度等于或大于在所用温度和压力下用于制备膜晶体的熔融液体的保持高度，坩埚的顶部由顶部支撑的圆锥形挡板进行“封盖” 的坩埚，提供具有高尺寸规则性并且不含气泡或未熔化夹杂物的单晶的改进的坩埚，并且单晶可广泛用于珠宝，钟表和电子。

6. 发明授权

US4434838A Apparatus and process for cooling and solidifying continuous or semi-continuously cast material 失效
标题翻译：用于冷却和固化连续或半连续铸造材料的装置和方法
公开(公告)号：US4434838A
公开(公告)日：1984-03-06
申请号：US272132
申请日：1981-06-10
申请人： Peter E. Sevier
发明人： Peter E. Sevier
IPC分类号： B22D11/124
CPC分类号： B22D11/1241 , B22D11/124 , Y10S117/91
摘要： An apparatus and process for casting a material comprising a coolant application device comprising a fluidized bed coolant system. The casting is carried out utilizing a casting mold which defines a casting zone. A soundwave generating system is provided for enhancing the flow of the fluidized bed into the vicinity of the casting zone.
摘要翻译：一种铸造材料的装置和方法，包括包括流化床冷却剂系统的冷却剂施加装置。使用限定铸造区域的铸模来进行铸造。提供了一种用于增强流化床流入铸造区域附近的声波产生系统。

7. 发明授权

US4242553A Apparatus for use in the production of ribbon-shaped crystals from a silicon melt 失效
标题翻译：用于从硅熔体制造带状晶体的装置
公开(公告)号：US4242553A
公开(公告)日：1980-12-30
申请号：US938299
申请日：1978-08-31
申请人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Samuel Berkman , Harold E. Temple
发明人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Samuel Berkman , Harold E. Temple
IPC分类号： H05B6/02 , H05B6/30 , C30B15/16
CPC分类号： H05B6/105 , Y10S117/90 , Y10S117/91 , Y10T117/1044 , Y10T117/1068
摘要： An improved apparatus characterized by an R-F coil, a crucible for confining a silicon melt, and a susceptor for supporting the crucible facilitating an electrical coupling of the coil with the melt. The susceptor comprises a pair of susceptor halves of a thickness less than two skin depths, each being the mirror image of the other, disposed in mutually opposed, electrically insulated relation, while the crucible comprises a quartz body supported by the graphite susceptor, whereby the R-F coil is electrically coupled with the melt.
摘要翻译：一种改进的装置，其特征在于R-F线圈，用于限制硅熔体的坩埚，以及用于支撑坩埚的基座，有助于线圈与熔体的电耦合。感受器包括一对厚度小于两个皮肤深度的感受体半部，每个感光体半体是相互相对的电绝缘关系的另一个的镜像，而坩埚包括由石墨感受器支承的石英体， RF线圈与熔体电耦合。

8. 发明授权

US3594132A Method of crucible-free zone melting a crystalline rod with laterally displaced rod holders 失效
标题翻译：无区域熔融方法具有侧向位移夹持器的晶体管
公开(公告)号：US3594132A
公开(公告)日：1971-07-20
申请号：US3594132D
申请日：1967-02-27
申请人： SIEMENS AG
发明人： KELLER WOLFGANG
IPC分类号： C30B13/28 , B01J17/10
CPC分类号： C30B13/28 , Y10S117/91 , Y10S117/912 , Y10T117/1072
摘要： METHOD OF CRUCIBLE-FREE ZONE MELTING A CRYSTALLINE ROD WHICH COMPRISES ROTATING A PAIR OF SPACED AND SUBSTANTIALLY VERTICALLY ALIGNED END HOLDERS SUPPORTING A CRYSTALLINE ROD THEREBETWEEN, HEATING THE ROD WITH AN ANNULAR HEATING DEVICE SURROUNDING THE ROD TO A TEMPERATURE AT WHICH A MOLTEN ZONE IS FORMED IN THE ROD DIVIDING THE ROD INTO A SUPPLY ROD PORITION BEING SUPPLIED TO THE MELT IN THE MOLTEN ZONE AND A ROD PORTION RESOLIDIFYING FROM THE MELT, RELATIVELY DISPLACING THE END HOLDERS AND THE HEATING DEVICE IN THE DIRECTION OF THE ROD AXIS AT A GIVEN RELATIVE SPEED SO THAT THE RESOLIDIFYING ROD PORTION HAS A THICKNESS OF PREDETERMINED NOMINAL VALUE, AND LATERALLY DISPLACING THE END HOLDER FOR THE SUPPLY ROD PORTION OUT OF VERTICAL ALIGNMENT WITH THE OTHER END HOLDER.

9. 发明授权

US2893847A Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies 失效
标题翻译：用于制备棒状结晶体，特别是半导体体的装置
公开(公告)号：US2893847A
公开(公告)日：1959-07-07
申请号：US48917755
申请日：1955-02-18
申请人： SIEMENS AG
发明人： HANS SCHWEICKERT , JOACHIM HAUS
IPC分类号： C30B15/02 , C30B15/06 , C30B15/08 , H01L21/00
CPC分类号： C30B15/08 , C30B15/02 , C30B15/06 , H01L21/00 , Y10S65/04 , Y10S117/91 , Y10T117/1012 , Y10T117/1052 , Y10T117/1056 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072

10. 发明授权

US2190296A Guide for molten material 失效
标题翻译：熔融材料指南
公开(公告)号：US2190296A
公开(公告)日：1940-02-13
申请号：US22717038
申请日：1938-08-27
申请人： WESTINGHOUSE ELECTRIC & MFG CO , BAKER AND CO INC
发明人： RICHARDSON HENRY K
IPC分类号： C03B5/167
CPC分类号： C03B5/1675 , Y10S117/90 , Y10S117/91

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