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1. 发明授权

US5700702A Method for manufacturing an acceleration sensor 失效
标题翻译：加速度传感器的制造方法
公开(公告)号：US5700702A
公开(公告)日：1997-12-23
申请号：US676282
申请日：1996-07-17
申请人： Helmut Klose , Markus Biebl , Thomas Scheiter , Christofer Hierold
发明人： Helmut Klose , Markus Biebl , Thomas Scheiter , Christofer Hierold
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , H01L21/265
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0828 , Y10S148/159
摘要： Manufacturing method for an acceleration sensor on silicon, whereby, following the manufacture of the doped regions required for the electronic function elements, a polysilicon layer is deposited. The polysilicon layer is structured such that a portion of this polysilicon layer forms an electrode (for example, the emitter electrode (9) and the collector electrode (10) of a transistor) and a sensor layer (17) provided as sensor element.
摘要翻译： PCT No.PCT / DE95 / 00022 Sec。 371日期：1996年7月17日 102（e）日期1996年7月17日PCT 1995年1月10日PCT PCT。第WO95 / 19572号公报日期1995年7月20日硅上的加速度传感器的制造方法，其中，在制造电子功能元件所需的掺杂区域之后，沉积多晶硅层。多晶硅层被构造为使得该多晶硅层的一部分形成电极（例如，发射极（9）和晶体管的集电极（10））和设置为传感器元件的传感器层（17）。

2. 发明授权

US5834332A Micromechanical semiconductor components and manufacturing method therefor 失效
标题翻译：微机电半导体元件及其制造方法
公开(公告)号：US5834332A
公开(公告)日：1998-11-10
申请号：US935384
申请日：1997-09-23
申请人： Christofer Hierold , Thomas Scheiter , Markus Biebl , Helmut Klose
发明人： Christofer Hierold , Thomas Scheiter , Markus Biebl , Helmut Klose
IPC分类号： G01L1/18 , B81B3/00 , B81B7/00 , G01L9/04 , G01P1/02 , G01P15/08 , H01L29/84 , H01L21/00
CPC分类号： B81C1/00246 , B81C1/0019 , G01P1/023 , G01P15/0802 , B81B2201/0235 , B81B2203/0315 , B81B2203/0361 , B81B2203/04 , B81B2207/07 , B81C2203/0136 , B81C2203/0714 , B81C2203/0742
摘要： A component having a movable micro mechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.
摘要翻译：提供了一种具有可移动的微机械功能元件的部件，其布置在具有由腹板或柱状支撑件支撑的覆盖层的空腔中。可移动元件可能被覆盖有用于封闭存在于覆盖层中的蚀刻孔的终止层。可移动部分的电端子，覆盖层和作为协作电极的基板中产生的掺杂区域能够实现易于安装在壳体中的加速度传感器。

3. 发明授权

US5760455A Micromechanical semiconductor component and manufacturing method therefor 失效
标题翻译：微机电半导体元件及其制造方法
公开(公告)号：US5760455A
公开(公告)日：1998-06-02
申请号：US616629
申请日：1996-03-15
申请人： Christofer Hierold , Thomas Scheiter , Markus Biebl , Helmut Klose
发明人： Christofer Hierold , Thomas Scheiter , Markus Biebl , Helmut Klose
IPC分类号： G01L1/18 , B81B3/00 , B81B7/00 , G01L9/04 , G01P1/02 , G01P15/08 , H01L29/84
CPC分类号： B81C1/00246 , B81C1/0019 , G01P1/023 , G01P15/0802 , B81B2201/0235 , B81B2203/0315 , B81B2203/0361 , B81B2203/04 , B81B2207/07 , B81C2203/0136 , B81C2203/0714 , B81C2203/0742
摘要： A component having a movable micromechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.
摘要翻译：提供了一种具有可移动微机械功能元件的部件，其布置在具有由腹板或柱状支撑件支撑的覆盖层的空腔中。可移动元件可能被覆盖有用于封闭存在于覆盖层中的蚀刻孔的终止层。可移动部分的电端子，覆盖层和作为协作电极的基板中产生的掺杂区域能够实现易于安装在壳体中的加速度传感器。

4. 发明授权

US5447067A Acceleration sensor and method for manufacturing same 失效
标题翻译：加速度传感器及其制造方法
公开(公告)号：US5447067A
公开(公告)日：1995-09-05
申请号：US207080
申请日：1994-03-08
申请人： Markus Biebl , Thomas Scheiter , Helmut Klose
发明人： Markus Biebl , Thomas Scheiter , Helmut Klose
IPC分类号： G01P15/09 , G01P15/08 , G01P15/12 , G01P15/125 , H01L29/84 , G01P1/02
CPC分类号： G01P15/125 , G01P15/0802 , G01P15/123 , G01P2015/0814
摘要： An acceleration sensor has a proof mass attached by resilient elements, in the form of micromechanical components, in a monocrystalline silicon layer of an SOI (silicon-on-insulator) substrate, the insulator layer of the substrate being removed under the structure which is susceptible to acceleration, in order to enable free mobility of the micromechanical components. Piezoresistors are provided for detecting movement of the proof mass, the piezoresistors supplying electrical signals to an evaluation circuit.
摘要翻译：加速度传感器具有通过在MEMS（绝缘体上硅）衬底的单晶硅层中以微机械部件的形式的弹性元件附着的校验物质，该衬底的绝缘体层在易感的结构下被去除以加速，以便实现微机械部件的自由移动。提供压阻器用于检测检测质量块的运动，压电电阻器将电信号提供给评估电路。

5. 发明授权

US5431051A Tunnel effect acceleration sensor 失效
标题翻译：隧道效应加速度传感器
公开(公告)号：US5431051A
公开(公告)日：1995-07-11
申请号：US219538
申请日：1994-03-29
申请人： Markus Biebl , Thomas Scheiter , Helmut Klose
发明人： Markus Biebl , Thomas Scheiter , Helmut Klose
IPC分类号： G01P15/08 , H01L29/88 , G01P15/13
CPC分类号： G01P15/0894
摘要： An acceleration sensor is produced on a silicon substrate by etching to leave a cantilevered beam of polysilicon with a tip on the substrate projecting toward this beam. Acceleration of the sensor causes the beam to bend, thereby changing the spacing between the tip and the beam, and thereby also changing the tunnel current, which is measured. Electrodes are provided that, given application of a potential thereto, effect an electrostatic compensation of the bending of the beam.
摘要翻译：通过蚀刻在硅衬底上产生加速度传感器，以留下多晶硅的悬臂梁，衬底上的尖端朝向该梁突出。传感器的加速度导致光束弯曲，从而改变尖端和光束之间的间距，从而也改变测量的隧道电流。提供电极，其给予施加电位以对光束的弯曲进行静电补偿。

6. 发明授权

US5450754A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US5450754A
公开(公告)日：1995-09-19
申请号：US207067
申请日：1994-03-08
申请人： Markus Biebl , Thomas Scheiter , Helmut Klose
发明人： Markus Biebl , Thomas Scheiter , Helmut Klose
IPC分类号： G01L1/14 , G01L9/00 , G01L9/12 , G01L19/02 , H01L29/84
CPC分类号： G01L19/02 , G01L9/0073
摘要： A pressure sensor comprises a matrix of diaphragms of polysilicon which, via a structure of electrical conductors, are arranged at an upper side of a silicon substrate for the determination of their variable electrical capacitance dependent on the pressure stressing. These diaphragms are present in at least two different sizes. Capacitances of these diaphragms of a same size are respectively connected to form a sub-unit such that basic capacitances of these sub-units are of a respectively same size.
摘要翻译：压力传感器包括多晶硅膜的矩阵，其经由电导体的结构布置在硅衬底的上侧，用于根据压力应力确定其可变电容。这些隔膜以至少两种不同的尺寸存在。相同尺寸的这些隔膜的电容分别连接以形成子单元，使得这些子单元的基本电容具有相同的尺寸。

7. 发明授权

US5373181A Sensor for sensing fingerpaints and method for producing the sensor 失效
标题翻译：用于感应指纹的传感器和用于产生传感器的方法
公开(公告)号：US5373181A
公开(公告)日：1994-12-13
申请号：US142713
申请日：1993-10-25
申请人： Thomas Scheiter , Markus Biebl , Helmut Klose
发明人： Thomas Scheiter , Markus Biebl , Helmut Klose
IPC分类号： H01L27/04 , B81B1/00 , G01B7/28 , G01L1/14 , G06K9/00 , G06T1/00 , H01L21/822 , H01L29/04 , H01L21/44
CPC分类号： G01L1/146 , G01L1/148 , G06K9/0002
摘要： A grid-like arrangement of membranes of doped polysilicon are mounted on a substrate but are electrically insulated therefrom each membrane extends over a cavity and is joined to the substrate at at least two supporting locations so that they cavity lies between the membrane and the substrate. Changes in an electrical quantity existing between the membranes and the substrate are measured as forces exerted on the grid-like arrangement of sensor elements so that the ridges in the skin on a finger tip may be sensed for detecting a fingerprint.
摘要翻译：掺杂多晶硅膜的栅状布置安装在基板上，但是与其电绝缘，每个膜在空腔上延伸并且在至少两个支撑位置处连接到基板，使得其空腔位于膜和基板之间。测量存在于膜和基底之间的电量的变化作为施加在传感器元件的格栅状布置上的力，从而可以感测指尖上的皮肤中的脊以检测指纹。

8. 发明授权

US5969534A Semiconductor testing apparatus 失效
标题翻译：半导体测试仪器
公开(公告)号：US5969534A
公开(公告)日：1999-10-19
申请号：US666491
申请日：1996-07-11
申请人： Holger Hubner , Werner Weber , Siegmar Koppe , Helmut Klose
发明人： Holger Hubner , Werner Weber , Siegmar Koppe , Helmut Klose
IPC分类号： G01R31/26 , G01R1/06 , G01R1/067 , G01R1/073 , H01L21/66 , G01R31/02
CPC分类号： G01R1/06783
摘要： A method and apparatus for the reversible contacting of a semiconductor circuit level to assist in performing a function test. The apparatus includes a testing head having test points arranged at a test side lying opposite the contact surfaces of a semiconductor circuit level. The test points are formed of liquid contacts in recesses in the test side of the testing head wherein the liquid contacts form menisci that project beyond the surface of the testing head. The recesses, in turn, are provided for metallizations which are connected to electrically-conductive leads. In addition, the surface may be provided with a roughening or with etched trenches.
摘要翻译： PCT No.PCT / DE95 / 00013 Sec。 371日期：1996年7月11日 102（e）日期1996年7月11日PCT 1995年1月9日PCT PCT。公开号WO95 / 18975 日期1995年7月13日用于半导体电路级的可逆接触以辅助执行功能测试的方法和装置。该装置包括具有布置在与半导体电路电平的接触表面相对的测试侧的测试点的测试头。测试点由测试头测试侧的凹槽中的液体触点形成，其中液体触点形成突出超出测试头表面的半月板。这些凹槽又被提供用于连接到导电引线的金属化。此外，表面可以设置有粗糙化或具有蚀刻的沟槽。

9. 发明授权

US5273934A Method for producing a doped region in a substrate 失效
标题翻译：在衬底中制造掺杂区域的方法
公开(公告)号：US5273934A
公开(公告)日：1993-12-28
申请号：US881166
申请日：1992-05-11
申请人： Karl Ehinger , Michael Bianco , Helmut Klose
发明人： Karl Ehinger , Michael Bianco , Helmut Klose
IPC分类号： H01L21/225 , H01L21/331 , H01L29/73 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/2255 , H01L29/732 , Y10S148/034 , Y10S438/923
摘要： A doped region (14) is produced in a substrate (11) of silicon by diffusion of dopant from a doped glass layer (13) that is arranged on an intermediate layer (12) situated on the substrate (11) . The dopant concentration in the doped region (14) is thereby limited by the intermediate layer (12). The doped glass layer (13) is particularly produced by chemical vapor deposition of (B(OSi(CH.sub.3).sub.3).sub.3).
摘要翻译：通过掺杂剂从布置在位于衬底（11）上的中间层（12）上的掺杂玻璃层（13）的扩散而在硅的衬底（11）中产生掺杂区域（14）。因此，掺杂区域（14）中的掺杂剂浓度被中间层（12）限制。掺杂的玻璃层（13）特别是通过（B（OSi（CH3）3）3）的化学气相沉积来制备。

10. 发明授权

US5177582A CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same 失效
标题翻译：具有降低的集电极/衬底电容的CMOS兼容双极晶体管及其制造方法
公开(公告)号：US5177582A
公开(公告)日：1993-01-05
申请号：US754377
申请日：1991-08-30
申请人： Thomas Meister , Hans-Willi Meul , Helmut Klose , Hermann Wendt
发明人： Thomas Meister , Hans-Willi Meul , Helmut Klose , Hermann Wendt
IPC分类号： H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732
CPC分类号： H01L29/0826 , H01L21/8249 , H01L27/0623 , H01L29/732
摘要： A bipolar transistor with a collector, a base and an emitter disposed in vertical succession includes a semiconductor substrate, insulating oxide zones disposed in the substrate for separating adjacent transistors, and a buried collector terminal layer at least partly disposed on the insulating oxide zones. An insulator structure laterally surrounding a collector. A subcollector is surrounded by the insulating oxide zones, has the same conductivity type with a lower impedance than the collector, is disposed under the collector and under the insulator structure, and is electrically connected to the collector. The insulator structure covers the buried collector terminal layer, laterally insulates the collector from the buried collector terminal layer, and has lateral surfaces extending inside the insulating oxide regions up to the subcollector. The buried collector terminal layer is in direct contact with the subcollector. The collector is electrically connected to the buried collector terminal layer only through the subcollector. The insulator structure has a contact hole extending to the buried collector terminal layer laterally of the active transistor zone, and a metallization filling the contact hole. A process for producing the bipolar transistor includes producing an insulator structure on a substrate for determining a location for a collector; and producing the collector by selective epitaxy only inside the insulator structure, for laterally insulating the collector with the insulator structure. An integrated circuit and method include such bipolar transistors and CMOS transistors.
摘要翻译：具有垂直相继布置的集电极，基极和发射极的双极晶体管包括半导体衬底，设置在衬底中用于分离相邻晶体管的绝缘氧化物区域和至少部分地设置在绝缘氧化物区域上的埋地集电极端子层。横向围绕收集器的绝缘体结构。子集电极被绝缘氧化物区围绕，具有与集电体相比具有较低阻抗的相同的导电类型，设置在集电器下方和绝缘体结构下方，并且与集电极电连接。绝缘体结构覆盖埋地集电极端子层，使集电体与埋地集电极端子层横向绝缘，并且具有在绝缘氧化物区域内延伸直到子集电极的侧表面。埋地集电极端子层与子集电极直接接触。集电极仅通过子集电极电连接到埋地集电极端子层。绝缘体结构具有在有源晶体管区域侧向延伸到集电极端子层的接触孔，以及填充接触孔的金属化。制造双极晶体管的方法包括：在基板上制造用于确定集电体位置的绝缘体结构; 并且仅通过绝缘体结构内的选择性外延生产集电体，用于使绝缘体结构的集电体横向绝缘。集成电路和方法包括这样的双极晶体管和CMOS晶体管。

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