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1. 发明授权

US07110652B2 Optical waveguide and method of manufacture 有权
公开(公告)号：US07110652B2
公开(公告)日：2006-09-19
申请号：US11235089
申请日：2005-09-27
申请人： Masahiro Sasaura , Kazuo Fujiura , Koji Enbutsu , Tadayuki Imai , Shogo Yagi , Takashi Kurihara , Makoto Abe , Seiji Toyoda , Eishi Kubota
发明人： Masahiro Sasaura , Kazuo Fujiura , Koji Enbutsu , Tadayuki Imai , Shogo Yagi , Takashi Kurihara , Makoto Abe , Seiji Toyoda , Eishi Kubota
IPC分类号： G02B6/00 , G02B6/10
CPC分类号： G02F1/3551 , G02B6/13 , G02B6/132 , G02B2006/12035 , G02B2006/12097 , G02B2006/121 , G02B2006/12109 , G02B2006/12142 , G02B2006/12164 , G02B2006/12173 , G02B2006/12176 , G02B2006/12178 , G02B2006/1218 , G02F1/0027 , G02F1/035 , Y10S117/918 , Y10T29/49016
摘要： An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1−xO3 is used as an optical waveguide. The input optical signal is transmitted to the KTaxNb1−xO3 film. The KTaxNb1−xO3 film undergoes changes in optical property when an external voltage signal is applied to the electrode. Therefore, as it passes through the KTaxNb1−xO3 film, the input optical signal is modulated by the characteristic change. The modulated optical signal is taken out as an output optical signal.

2. 发明授权

US06996321B2 Optical waveguide and method of manufacture 有权
标题翻译：光波导及制造方法
公开(公告)号：US06996321B2
公开(公告)日：2006-02-07
申请号：US10909433
申请日：2004-08-03
申请人： Masahiro Sasaura , Kazuo Fujiura , Koji Enbutsu , Tadayuki Imai , Shogo Yagi , Takashi Kurihara , Makoto Abe , Seiji Toyoda , Eishi Kubota
发明人： Masahiro Sasaura , Kazuo Fujiura , Koji Enbutsu , Tadayuki Imai , Shogo Yagi , Takashi Kurihara , Makoto Abe , Seiji Toyoda , Eishi Kubota
IPC分类号： G02B6/00 , G02B6/10
CPC分类号： G02F1/3551 , G02B6/13 , G02B6/132 , G02B2006/12035 , G02B2006/12097 , G02B2006/121 , G02B2006/12109 , G02B2006/12142 , G02B2006/12164 , G02B2006/12173 , G02B2006/12176 , G02B2006/12178 , G02B2006/1218 , G02F1/0027 , G02F1/035 , Y10S117/918 , Y10T29/49016
摘要： An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1-xO3 is used as an optical waveguide. The input optical signal is transmitted to the KTaxNb1-xO3 film. The KTaxNb1-xO3 film undergoes changes in optical property when an external voltage signal is applied to the electrode. Therefore, as it passes through the KTaxNb1-xO3 film, the input optical signal is modulated by the characteristic change. The modulated optical signal is taken out as an output optical signal.
摘要翻译：提供了能够具有各种特性的光波导及其制造方法以及制造晶体膜的方法。使用光学功能材料KTa×Nb 1-x O 3 3作为光波导。输入光信号被传输到KTa1＆lt; 1＆gt; 1＆lt; 3＆lt; 3＆gt; 3＆lt; 3＆gt;膜。当向电极施加外部电压信号时，KTa1＆lt; 1＆gt; 1＆lt; 3＆lt; 3＆lt; 3＆gt;膜的光学特性发生变化。因此，当它通过KTa铌1-x O 3 O 3膜时，输入光信号被特性变化调制。将调制的光信号作为输出光信号取出。

3. 发明申请

US20050008318A1 Optical waveguide and method of manufacture 有权
标题翻译：光波导及制造方法
公开(公告)号：US20050008318A1
公开(公告)日：2005-01-13
申请号：US10909433
申请日：2004-08-03
申请人： Masahiro Sasaura , Kazuo Fujiura , Koji Enbutsu , Tadayuki Imai , Shogo Yagi , Takashi Kurihara , Makoto Abe , Seiji Toyoda , Eishi Kubota
发明人： Masahiro Sasaura , Kazuo Fujiura , Koji Enbutsu , Tadayuki Imai , Shogo Yagi , Takashi Kurihara , Makoto Abe , Seiji Toyoda , Eishi Kubota
IPC分类号： G02B6/12 , G02B6/132 , G02F1/00 , G02F1/035 , G02F1/355 , G02B6/10
CPC分类号： G02F1/3551 , G02B6/13 , G02B6/132 , G02B2006/12035 , G02B2006/12097 , G02B2006/121 , G02B2006/12109 , G02B2006/12142 , G02B2006/12164 , G02B2006/12173 , G02B2006/12176 , G02B2006/12178 , G02B2006/1218 , G02F1/0027 , G02F1/035 , Y10S117/918 , Y10T29/49016
摘要： An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1-xO3 is used as an optical waveguide. The input optical signal is transmitted to the KTaxNb1-xO3 film. The KTaxNb1-xO3 film undergoes changes in optical property when an external voltage signal is applied to the electrode. Therefore, as it passes through the KTaxNb1-xO3 film, the input optical signal is modulated by the characteristic change. The modulated optical signal is taken out as an output optical signal.
摘要翻译：提供了能够具有各种特性的光波导及其制造方法以及制造晶体膜的方法。光学功能材料KTaxNb1-xO3用作光波导。输入光信号传输到KTaxNb1-xO3胶片。当向电极施加外部电压信号时，KTaxNb1-xO3膜经历光学特性的变化。因此，当通过KTaxNb1-xO3胶片时，输入光信号由特征变化调制。将调制的光信号作为输出光信号取出。

4. 发明申请

US20040136084A1 Optical element and manufacturing method therefor 有权
标题翻译：光学元件及其制造方法
公开(公告)号：US20040136084A1
公开(公告)日：2004-07-15
申请号：US10684294
申请日：2003-10-10
发明人： Yasuyuki Unno , Seiji Takeuchi
IPC分类号： G02B003/00 , G02B009/00
CPC分类号： G03F7/70966 , C30B11/00 , C30B29/12 , G02B1/02 , Y10S117/918
摘要： An optical element and a manufacturing method therefor, an exposure apparatus, and a device manufacturing method that can reduce the effect of intrinsic birefringence under high NA conditions. According to an optical element as one aspect of the present invention, an angle between a null0 0 1null axis of an isometric crystal and an optical axis is less than 10null, and preferably 0null.
摘要翻译：一种光学元件及其制造方法，曝光装置和可以在高NA条件下降低固有双折射效应的器件制造方法。根据作为本发明的一个方面的光学元件，等轴晶体的[0 0]轴与光轴之间的角度小于10°，优选为0°。

5. 发明授权

US06589333B1 Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel 失效
标题翻译：用于制造基板的方法，根据该方法制造的基板，载体晶片和钻石宝石
公开(公告)号：US06589333B1
公开(公告)日：2003-07-08
申请号：US09665216
申请日：2000-09-18
申请人： Ulrich Gösele , Andreas Plössl
发明人： Ulrich Gösele , Andreas Plössl
IPC分类号： C30B2502
CPC分类号： C30B25/18 , Y10S117/918
摘要： A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps: Selection of a substrate of a mono-crystalline material having a fixed lattice constant (aSi) or with a layer consisting of such a material. Manufacture of a strained silicon layer with foreign material atoms incorporated at substitutional lattice sites on the mono-crystalline material of the substrate. Transfer of the strained layer into an at least partly relaxed state in which it adopts by relaxation and through the selected foreign material concentration a lattice constant (aSi(C) which satisfies the condition n.aSi(C)=m.aD, wherein n and m are integers and aD is the lattice constant of diamond, with the relaxed layer forming the substrate or substrate surface for the epitaxial growth.
摘要翻译：描述了用于生产用于随后生长单晶金刚石层的合适基底的方法。该方法包括以下步骤：选择具有固定晶格常数（aSi）或由这种材料构成的层的单晶材料的衬底。制造具有掺杂在取代晶格位置的异物原子的应变硅层在基底的单晶材料上。将应变层转变成至少部分松弛的状态，其中通过松弛采用并通过选择的异物浓度获得满足条件n.aSi的晶格常数（aSi（C）（C）= m.aD，其中n和m是整数，aD是金刚石的晶格常数，松弛层形成用于外延生长的衬底或衬底表面。

6. 发明授权

US5900057A Planar waveguide and a process for its fabrication 失效
标题翻译：平面波导及其制造工艺
公开(公告)号：US5900057A
公开(公告)日：1999-05-04
申请号：US658419
申请日：1996-06-05
申请人： Christoph J. Buchal , Theo Siegrist
发明人： Christoph J. Buchal , Theo Siegrist
IPC分类号： G02F1/35 , H01S3/063 , H01S3/16 , C30B29/12
CPC分类号： H01S3/0632 , H01S2302/00 , H01S3/1608 , H01S3/1645 , Y10S117/918
摘要： A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of dope host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.
摘要翻译：公开了一种平面波导和用于制造平面波导的工艺。波导具有形成在基底上的掺杂主体材料层。主体材料是诸如金属氟化物的三价材料，其中金属选自第三类B族金属和门德列维埃族周期表中的镧系稀土金属。掺杂剂是诸如铒的稀土金属。该波导具有带宽约为60nm的发射光谱，用于在约1.51μm至约1.57μm的波长处放大光信号。波导通过在衬底上形成掺杂的主体材料层而制成。该膜通过从两个独立的源蒸发材料形成，一个源用于掺杂剂材料，另一个源用于主体材料，并在衬底上形成蒸发材料的膜。

7. 发明授权

US5146533A Ion exchanged crystalline waveguides and processes for their preparation 失效
标题翻译：离子交换晶体波导及其制备方法
公开(公告)号：US5146533A
公开(公告)日：1992-09-08
申请号：US738775
申请日：1991-08-01
申请人： John D. Bierlein , August Ferretti , Mark G. Roelofs
发明人： John D. Bierlein , August Ferretti , Mark G. Roelofs
IPC分类号： C30B33/00 , G02B6/13 , G02B6/134 , G02F1/35 , G02F1/355
CPC分类号： G02B6/1345 , Y10S117/918
摘要： There is disclosed an optical waveguide comprising a K.sub.1-x Rb.sub.x TiOMO.sub.4 single crystal substrate, wherein x is from 0 to 1 and M is P or As, having at least one optically smooth surface wherein sufficient K.sup.+ and/or Rb.sup.+ have been replaced by ions selected from at least one of H.sup.+ and NH.sub.4.sup.+ and, optionally, at least one monovalent ion selected from Rb.sup.+, Cs.sup.+, Tl.sup.+, and/or at least one divalent ion selected from Ba.sup.+2, Sr.sup.+2, Ca.sup.+2 and Pb.sup.+2 change the surface index of refraction at least about 0.00025 with respect to the index of refraction of the single crystal substrate. One process disclosed for producing an optical waveguide comprises the steps of contacting at least one optically smooth surface of a single crystal of K.sub.1-x Rb.sub.x TiOMO.sub.4 with an ion exchange medium capable of supplying said replacement ions for sufficient time at a temperature of from about 100.degree. C. to about 600.degree. C., and cooling the resulting crystal. Another process disclosed for producing an optical waveguide comprises the step of applying a DC voltage of from about 20 V per cm of crystal thickness to about 2000 V per cam of crystal thickness across the z-surfaces of a z-cut K.sub.1-x Rb.sub.x TiOMO.sub.4 single crystal, in the presence of a proton source for sufficient time at a temperature of from about -40.degree. C. to 400.degree. C. A nonlinear optic device using the optical waveguide of the invention is also disclosed.
摘要翻译：公开了一种包括K1-xRbxTiOMO4单晶衬底的光波导，其中x为0至1，M为P或As，具有至少一个光学平滑表面，其中足够的K +和/或Rb +已经被选自选自Rb +，Cs +，Tl +和/或至少一种选自Ba + 2，Sr + 2，Ca + 2和Pb + 2的二价离子中的至少一种选自H +和NH4 +，以及任选的至少一种一价离子表面折射率相对于单晶衬底的折射率至少约为0.00025。公开的用于制造光波导的一个方法包括以下步骤：将K1-xRbxTiOMO4的单晶的至少一个光学光滑表面与能够在约100℃的温度下供应所述置换离子足够的时间的离子交换介质至约600℃，并冷却所得晶体。公开的用于制造光波导的另一种方法包括以下步骤：在z切割的K1-xRbxTiOMO4单晶的z表面上施加每厘米晶体厚度约20V的DC电压至约2000V 在约-40℃至400℃的温度下存在质子源足够的时间。还公开了使用本发明的光波导的非线性光学器件。

8. 发明授权

US5066356A Hydrothermal process for growing optical-quality single crystals 失效
标题翻译：用于生产光学质量单晶的水热法
公开(公告)号：US5066356A
公开(公告)日：1991-11-19
申请号：US461562
申请日：1990-01-05
申请人： August Ferretti , Thurman E. Gier
发明人： August Ferretti , Thurman E. Gier
IPC分类号： C30B7/10 , C30B7/00 , C30B29/14 , C30B29/32 , G02B1/02
CPC分类号： C30B29/22 , C30B29/14 , C30B7/00 , Y10S117/918
摘要： A hydrothermal process for growing a crystal of MTiOXO.sub.4 at an elevated temperature is disclosed which employs a growth medium comprising a mineralizer solution, and is characterized as employing aqeuous mineralizer solution in which the concentration of M is at least about 8 molar, and as employing a growth region temperature of less than about 500.degree. C. and/or a pressure of less than 14,000 psi during crystallization. M is selected from the group consisting of K, Rb, Tl and NH.sub.4 and mixtures thereof, and X is selected from the group consisting of P and As and mixtures thereof.
摘要翻译：公开了一种用于在升高的温度下生长MTiOXO4的晶体的水热法，其采用包含矿化剂溶液的生长培养基，并且其特征在于使用其中M的浓度至少约为8摩尔的高效矿化剂溶液，生长区温度低于约500℃，和/或在结晶过程中压力小于14,000psi。 M选自K，Rb，Tl和NH 4及其混合物，X选自P和As及其混合物。

9. 发明授权

US4632723A Orientation filtering for crystalline films 失效
标题翻译：晶体膜的取向过滤
公开(公告)号：US4632723A
公开(公告)日：1986-12-30
申请号：US481096
申请日：1983-03-31
申请人： Henry I. Smith , Harry A. Atwater , Carl V. Thompson , Michael W. Geis
发明人： Henry I. Smith , Harry A. Atwater , Carl V. Thompson , Michael W. Geis
IPC分类号： C30B13/34 , C30B13/06
CPC分类号： C30B13/34 , Y10S117/913 , Y10S117/918
摘要： A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.
摘要翻译：将基材涂覆以重结晶的膜。在膜中产生结晶阻挡层的图案，例如通过蚀刻膜中的空隙。通常应用包封层以保护膜，填充空隙，否则增强再结晶过程。进行重结晶，使得某些取向通常优先通过势垒，通常由于生长速度各向异性。结果是具有特定的预定晶体取向，取向范围或一组离散取向的薄膜。

10. 发明授权

US4561915A Process for epitaxial growth on a corrugated wafer 失效
标题翻译：在波纹晶片上外延生长的工艺
公开(公告)号：US4561915A
公开(公告)日：1985-12-31
申请号：US625052
申请日：1984-06-26
申请人： Ikuo Mito
发明人： Ikuo Mito
IPC分类号： C30B19/12 , C30B25/18 , H01L21/208 , H01S5/00 , H01L21/368
CPC分类号： C30B19/12 , C30B25/18 , H01L21/02392 , H01L21/0243 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02625 , Y10S117/913 , Y10S117/918 , Y10S438/964
摘要： A process for epitaxial growth which effects epitaxial growth while suppressing thermal deformation of surface corrugations of an InGaAsP/InP system semiconductor substrate. Deformation of surface corrugations is suppressed by disposing a GaAs.sub.1-z P.sub.z (0.1.ltoreq.z.ltoreq.0.8) wafer over and in close contact with the surface of the semiconductor substrate until immediately before a start of the epitaxial growth process.
摘要翻译：一种用于外延生长的方法，其实现外延生长同时抑制InGaAsP / InP系统半导体衬底的表面波纹的热变形。通过将GaAs1-zPz（0.1≤z≤0.8）晶片设置在半导体衬底的表面上并紧密接触半导体衬底的表面直到紧接在外延生长过程开始之前来抑制表面波纹的变形。

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