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1. 发明授权

US09708728B1 Growth of metal oxide single crystals from alkaline-earth metal fluxes 有权
公开(公告)号：US09708728B1
公开(公告)日：2017-07-18
申请号：US13550050
申请日：2012-07-16
申请人： Jeffrey Brian Whalen , Theo Siegrist
发明人： Jeffrey Brian Whalen , Theo Siegrist
IPC分类号： C30B19/02 , C30B15/00 , C30B9/10 , C30B29/22
CPC分类号： C30B15/00 , C30B9/10 , C30B19/02 , C30B29/22 , C30B29/225
摘要： A process for the growth of new, and difficult-to-synthesize, metal oxide, and other mixed anion oxide-based, single crystals from a molten metal flux. Metal fluxes are new for the growth of metal oxide single crystals. Preliminary reactions proved that new phases and phases that normally require costly, extreme conditions do grow as single crystals. Batches of individual reactions are heat-treated to synthesize single crystals comprised of oxygen with one or more transition, alkaline-earth and/or lanthanide metals, and can also include other anions like chalcogens or pnictogens, or halides. The reactivity and the propensity for crystallization of charge compensated single crystals from alkaline earth fluxes have been made evident by the results presented here.

2. 发明申请

US20070215863A1 Fabricating apparatus with doped organic semiconductors 审中-公开
标题翻译：掺杂有机半导体制造装置
公开(公告)号：US20070215863A1
公开(公告)日：2007-09-20
申请号：US11375833
申请日：2006-03-15
申请人： Christian Kloc , Oleg Mitrofanov , Theo Siegrist , John Wikberg , David Lang
发明人： Christian Kloc , Oleg Mitrofanov , Theo Siegrist , John Wikberg , David Lang
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/5052 , H01L21/268 , H01L51/5253
摘要： A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.
摘要翻译：一种方法包括在衬底的表面上形成包括多芳族分子的半导体区域。该方法还包括在该区域上形成基本上不透氧的介电层。形成半导体区域的行为包括将分子暴露于氧，同时将分子暴露于可见光或紫外光。

3. 发明授权

US5470530A Article comprising an intermetallic superconductor material 失效
标题翻译：包含金属间超导体材料的制品
公开(公告)号：US5470530A
公开(公告)日：1995-11-28
申请号：US177837
申请日：1994-01-05
申请人： Robert J. Cava , Theo Siegrist
发明人： Robert J. Cava , Theo Siegrist
IPC分类号： C22C5/00 , C04B35/58 , C04B35/653 , C22C19/03 , H01L39/12 , C22C5/04 , C22C28/00 , C22C30/00
CPC分类号： C04B35/5805 , C04B35/5156 , C04B35/653 , H01L39/12 , Y10S420/901 , Y10S505/805
摘要： Material comprising an effective amount of a novel intermetallic bulk superconductor compound is disclosed. The compound has the composition LnNi.sub.2 B.sub.2 C, with Ln being Y or a rare earth (atomic number 57-71), preferably Tm, Er, Ho or Ln. A compound of composition XPt.sub.2 B.sub.2 C, with X=Y and/or La, is also a superconductor.
摘要翻译：公开了包含有效量的新型金属间体超导体化合物的材料。化合物具有LnNi2B2C，Ln为Y或稀土（原子序数57-71），优选为Tm，Er，Ho或Ln。具有X = Y和/或La的组合物XPt2B2C的化合物也是超导体。

4. 发明授权

US5659181A Article comprising .alpha.-hexathienyl 失效
标题翻译：文章包括α-己炔基
公开(公告)号：US5659181A
公开(公告)日：1997-08-19
申请号：US393494
申请日：1995-03-02
申请人： Paul Michael Bridenbaugh , Robert McLemore Fleming , Robert Cort Haddon , Robert Alfred Laudise , Theo Siegrist
发明人： Paul Michael Bridenbaugh , Robert McLemore Fleming , Robert Cort Haddon , Robert Alfred Laudise , Theo Siegrist
IPC分类号： H01L51/05 , G02F1/1368 , H01L29/786 , H01L51/30 , H01L51/40 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0068 , H01L51/0036 , G02F1/1368 , H01L51/0541 , H01L51/0545
摘要： A previously unknown phase of .alpha.-hexathienyl, designated .alpha.-6T/HT, exhibits diffraction peaks at 2.theta.=4.31.degree., 8.64.degree., 12.96.degree., 17.32.degree., 26.15.degree. and 29.08.degree. in a CuK.sub..alpha. powder X-ray diffraction pattern, and is expected to have properties (e.g., high hole mobility) that make the phase desirable for use in, e.g., thin film transistors. Substitution of thin films of .alpha.-6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.
摘要翻译：称为α-6T / HT的α-己二烯以前未知的相在CuKα粉末X射线衍射图中在2θ= 4.31°，8.64°，12.96°，17.32°，26.15°和29.08°处显示出衍射峰，并且预期具有使相位期望用于例如薄膜晶体管的性质（例如，高空穴迁移率）。考虑在薄膜晶体管和其它器件中替代现有技术的有机薄膜的α-6T / HT薄膜。

5. 发明授权

US5555342A Planar waveguide and a process for its fabrication 失效
标题翻译：平面波导及其制造工艺
公开(公告)号：US5555342A
公开(公告)日：1996-09-10
申请号：US373346
申请日：1995-01-17
申请人： Christoph J. Buchal , Theo Siegrist
发明人： Christoph J. Buchal , Theo Siegrist
IPC分类号： G02F1/35 , H01S3/063 , H01S3/16 , G02B6/10
CPC分类号： H01S3/0632 , H01S2302/00 , H01S3/1608 , H01S3/1645 , Y10S117/918
摘要： A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of doped host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.
摘要翻译：公开了一种平面波导和用于制造平面波导的工艺。波导具有形成在衬底上的掺杂主体材料层。主体材料是诸如金属氟化物的三价材料，其中金属选自第三类B族金属和门德列维埃族周期表中的镧系稀土金属。掺杂剂是诸如铒的稀土金属。该波导具有带宽约为60nm的发射光谱，用于在约1.51μm至约1.57μm的波长处放大光信号。波导通过在衬底上形成掺杂的主体材料层而制成。该膜通过从两个独立的源蒸发材料形成，一个源用于掺杂剂材料，另一个源用于主体材料，并在衬底上形成蒸发材料的膜。

6. 发明授权

US5900057A Planar waveguide and a process for its fabrication 失效
标题翻译：平面波导及其制造工艺
公开(公告)号：US5900057A
公开(公告)日：1999-05-04
申请号：US658419
申请日：1996-06-05
申请人： Christoph J. Buchal , Theo Siegrist
发明人： Christoph J. Buchal , Theo Siegrist
IPC分类号： G02F1/35 , H01S3/063 , H01S3/16 , C30B29/12
CPC分类号： H01S3/0632 , H01S2302/00 , H01S3/1608 , H01S3/1645 , Y10S117/918
摘要： A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of dope host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.
摘要翻译：公开了一种平面波导和用于制造平面波导的工艺。波导具有形成在基底上的掺杂主体材料层。主体材料是诸如金属氟化物的三价材料，其中金属选自第三类B族金属和门德列维埃族周期表中的镧系稀土金属。掺杂剂是诸如铒的稀土金属。该波导具有带宽约为60nm的发射光谱，用于在约1.51μm至约1.57μm的波长处放大光信号。波导通过在衬底上形成掺杂的主体材料层而制成。该膜通过从两个独立的源蒸发材料形成，一个源用于掺杂剂材料，另一个源用于主体材料，并在衬底上形成蒸发材料的膜。

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