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1. 发明授权

US4495155A Modified crucible for the pendant drop method of crystallization 失效
标题翻译：改性坩埚用于悬滴法结晶
公开(公告)号：US4495155A
公开(公告)日：1985-01-22
申请号：US496893
申请日：1983-05-23
申请人： Jean Ricard , Charles Excoffon
发明人： Jean Ricard , Charles Excoffon
IPC分类号： C30B15/00 , C30B15/08 , C30B15/10 , C30B15/24 , C30B29/64
CPC分类号： C30B15/08 , C30B15/007 , C30B15/10 , Y10S117/91 , Y10T117/1052
摘要： A crucible useful for continuous preparation of single crystals with selected crystal orientation or for depositing thin films of crystalline materials such as silica on substrates such as graphite by the pendant drop growth (PDG) method, the crucible base being tapped with one or more capillary bores having a length equal to or greater than the retention height of the molten liquid used to prepare the crystal of film at the temperatures and pressures used, the crucible being improved by "capping" its bottom with a conical baffle plate supported by feet on the bottom of the crucible, the improved crucible providing single crystals having high dimensional regularity and containing no bubbles or unmelted inclusions and the single crystals being broadly useful in jewelry, horology, and electronics.
摘要翻译：一种用于连续制备具有选定晶体取向的单晶或用于通过侧滴生长（PDG）方法在诸如石墨的基底上沉积诸如二氧化硅的结晶材料的薄膜的坩埚，坩埚基底与一个或多个毛细管孔其长度等于或大于在所用温度和压力下用于制备膜晶体的熔融液体的保持高度，坩埚的顶部由顶部支撑的圆锥形挡板进行“封盖” 的坩埚，提供具有高尺寸规则性并且不含气泡或未熔化夹杂物的单晶的改进的坩埚，并且单晶可广泛用于珠宝，钟表和电子。

2. 发明授权

US4233338A Processes for deposition of thin films of crystalline silicon on graphite 失效
标题翻译：结晶硅薄膜沉积在石墨上的工艺
公开(公告)号：US4233338A
公开(公告)日：1980-11-11
申请号：US926879
申请日：1978-07-24
申请人： Jean Ricard , Charles Excoffon
发明人： Jean Ricard , Charles Excoffon
IPC分类号： C04B41/87 , C04B35/52 , C23C2/00 , C30B15/00 , C30B15/06 , C30B19/00 , C30B29/06 , H01L21/36
CPC分类号： C30B15/007 , C23C2/006 , C30B15/06 , Y10S117/914 , Y10S438/925
摘要： Processes for the continuous deposition of crystalline silicon on graphite substrates, the silicon being undoped or N- or P-doped and the substrates being useful for photovoltaic cells and other electronic devices, the processes comprising placing crystalline silicon in at least one crucible having a capillary port with a vertical axis in its lower part; bringing the silicon to its melting point; bringing a graphite substrate into contact with the pendant drop formed at the lower mouth of the capillary; moving the substrate at a selected speed in a constant predetermined direction; and removing the substrate coated with the crystalline substance at chosen time intervals.
摘要翻译：晶体硅在石墨基片上连续沉积的方法，硅是未掺杂的或者是N或P掺杂的，并且该衬底可用于光伏电池和其它电子器件，该方法包括将晶体硅置于至少一个具有毛细管端口在其下部具有垂直轴; 使硅达到其熔点; 使石墨衬底与形成在毛细管的下口处的侧悬液接触; 以恒定的预定方向以选定的速度移动所述基板; 并以选定的时间间隔去除涂有结晶物质的基材。

3. 发明授权

US4565600A Processes for the continuous preparation of single crystals 失效
标题翻译：连续制备单晶的方法
公开(公告)号：US4565600A
公开(公告)日：1986-01-21
申请号：US492368
申请日：1983-05-11
申请人： Jean Ricard
发明人： Jean Ricard
IPC分类号： C30B15/08 , C30B15/34
CPC分类号： C30B29/20 , C30B15/08 , Y10S117/91
摘要： Processes for the continuous preparation of single crystals having a predetermined shape and requiring little or no subsequent machining which processes comprise placing a single crystal-forming material in a crucible fitted in its lower portion with a capillary conduit having a length equal to or greater than the retention length of the molten material in the capillary at the selected temperature and pressure, heating the crystal-forming material to a temperature above its melting point, bringing a performed appropriately oriented crystal seed into contact with the pendant drop formed at the lower point of the capillary, and pulling the seed crystal away from the feed material in the crucible so that the amount of crystal-forming material fed per unit of time is at every instant substantially equal to the quantity of material pulled into single crystal form, together with novel apparatus comprising a capillary-containing crucible, heating means, feed means, enclosure, seed-supporting carrier, means for moving and rotating the carrier, and means for controlling the movement of the carrier.
摘要翻译：用于连续制备具有预定形状并且几乎不需要后续加工的单晶的方法，该方法包括将单晶形成材料放置在装配在其下部的坩埚中，毛细导管的长度等于或大于在选择的温度和压力下熔融材料在毛细管中的保留长度，将晶体形成材料加热到高于其熔点的温度，使得所执行的适当取向的晶种与形成在毛细管，并将晶种从坩埚中的进料中拉出，使得每单位时间供给的结晶形成材料的量基本上等于被拉入单晶形式的材料的数量，以及新颖的装置包括含毛细管的坩埚，加热装置，进料装置，外壳，种子支撑载体，用于移动和旋转载体的装置，以及用于控制载体的运动的装置。

4. 外观设计

USD443760S1 Shipping container with slide valve 失效
标题翻译：带滑阀的集装箱
公开(公告)号：USD443760S1
公开(公告)日：2001-06-19
申请号：US29114858
申请日：1999-12-03
申请人： Guy DeGrandpré , Yvon Rainville , Jean Ricard
设计人： Guy DeGrandpré , Yvon Rainville , Jean Ricard

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