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1. 发明授权

US08962489B2 Method for etching film containing cobalt and palladium 有权
标题翻译：蚀刻含有钴和钯的膜的方法
公开(公告)号：US08962489B2
公开(公告)日：2015-02-24
申请号：US14217652
申请日：2014-03-18
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/3065 , C23F4/00 , H01J2237/334 , H01L43/12
摘要： Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas containing halogen elements after the process “a” of etching of the film, a process “c” of exposing the workpiece to plasma of a second gas containing carbons after the process “b” of exposing the workpiece to the plasma of the first gas, and a process “d” of exposing the workpiece to plasma of a third gas containing a noble gas after the process “c” of exposing the workpiece to the plasma of the second gas. In the method, a temperature of a placement table on which the workpiece is placed is set to a first temperature of 10° C. or less in the process “a”, process “b” and process “c”.
摘要翻译：公开了一种蚀刻包含钴和钯的膜的方法。胶片上有一个硬面罩。该方法膜包括通过离子溅射蚀刻来蚀刻该膜的工艺“a”，在膜的蚀刻过程“a”之后，将工件暴露于含有卤素元素的第一气体的等离子体的工艺“b” 在将工件暴露于第一气体的等离子体的工艺“b”之后，将工件暴露于含有碳的第二气体的等离子体的“c”以及将工件暴露于含有在将工件暴露于第二气体的等离子体的过程“c”之后的惰性气体。在该方法中，将工件放置在其上的放置台的温度在工艺“a”，工艺“b”和工艺“c”中设定为10℃以下的第一温度。

2. 发明授权

US09419211B2 Etching method and substrate processing apparatus 有权
标题翻译：蚀刻方法和基板处理装置
公开(公告)号：US09419211B2
公开(公告)日：2016-08-16
申请号：US14065597
申请日：2013-10-29
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki , Nao Koizumi , Takashi Sone , Fumiko Yamashita
IPC分类号： H01L21/00 , H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , G11C11/161 , H01J37/32091
摘要： A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.
摘要翻译：可以优化用于蚀刻工艺的气体和其中绝缘层插入在两层磁性材料之间的金属叠层膜的处理过程。蚀刻包括在第一磁性层和第二磁性层之间插入有绝缘层的金属层叠膜的多层膜的蚀刻方法包括：通过供给至少含有C，O的气体产生的等离子体蚀刻金属层叠膜，和H进入处理室; 以及通过将至少含有CF 4气体的气体供给到所述处理室中而产生的等离子体处理所述金属层叠膜。

3. 发明授权

US09660182B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US09660182B2
公开(公告)日：2017-05-23
申请号：US14387655
申请日：2013-04-22
申请人： Tokyo Electron Limited
发明人： Takashi Sone , Daisuke Urayama , Masato Kushibiki , Nao Koizumi , Wataru Kume , Eiichi Nishimura , Fumiko Yamashita
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32009 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32807 , H01J37/32825 , H01J37/32834 , H01J37/32908 , H01J2237/18 , H01J2237/327 , H01J2237/3341
摘要： A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.

4. 发明申请

US20150050750A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20150050750A1
公开(公告)日：2015-02-19
申请号：US14387655
申请日：2013-04-22
申请人： Tokyo Electron Limited
发明人： Takashi Sone , Daisuke Urayama , Masato Kushibiki , Nao Koizumi , Wataru Kume , Eiichi Nishimura , Fumiko Yamashita
IPC分类号： H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32009 , H01J37/32091 , H01J37/32165 , H01J37/32568 , H01J37/32807 , H01J37/32825 , H01J37/32834 , H01J37/32908 , H01J2237/18 , H01J2237/327 , H01J2237/3341
摘要： A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.
摘要翻译：蚀刻具有第一磁性层105和第二磁性层103层叠有绝缘层104的结构的多层材料的等离子体处理方法通过包括处理室12的等离子体处理装置10进行，处理室12的处理空间S 形成了; 以及将处理气体供给到处理空间中的气体供给部44，其包括通过供给第一处理而产生等离子体而对第一磁性层进行蚀刻的第一蚀刻工序，第一蚀刻工序停止在绝缘层; 以及通过供给第二处理气体并产生等离子体来除去残渣Z的第二蚀刻工艺。第一磁性层和第二磁性层含有CoFeB，第一处理气体含有Cl 2，第二处理气体含有H 2。

5. 发明授权

US08772172B2 Semiconductor device manufacturing method and plasma etching apparatus 有权
标题翻译：半导体器件制造方法和等离子体蚀刻装置
公开(公告)号：US08772172B2
公开(公告)日：2014-07-08
申请号：US13947477
申请日：2013-07-22
申请人： Tokyo Electron Limited
发明人： Masato Kushibiki , Eiichi Nishimura
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449 , H01J37/32706 , H01L21/31116 , H01L21/31122 , H01L21/32137 , H01L21/67069
摘要： A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds.
摘要翻译：半导体器件制造方法包括：等离子体蚀刻步骤，用于蚀刻形成在容纳在处理室中的衬底上的蚀刻靶膜。在等离子体蚀刻步骤中，将包含预定气体的气体混合物的处理气体供给到处理室，并且包括第一步骤的循环，其中将至少一个预定气体的流量设定为第一值第一时间段和第二步骤，其中将流量设定为在第二时间段内与第一值不同的第二值连续重复至少三次而不去除等离子体。第一时间段和第二时间段被设定为约1至15秒。

6. 发明申请

US20140120635A1 ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：蚀刻方法和基板处理装置
公开(公告)号：US20140120635A1
公开(公告)日：2014-05-01
申请号：US14065597
申请日：2013-10-29
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki , Nao Koizumi , Takashi Sone , Fumiko Yamashita
IPC分类号： H01L21/3065 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01J37/32091
摘要： A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.
摘要翻译：可以优化用于蚀刻工艺的气体和其中绝缘层插入在两层磁性材料之间的金属叠层膜的处理过程。蚀刻包括在第一磁性层和第二磁性层之间插入有绝缘层的金属层叠膜的多层膜的蚀刻方法包括：通过供给至少含有C，O的气体产生的等离子体蚀刻金属层叠膜，和H进入处理室; 以及通过将至少含有CF 4气体的气体供给到所述处理室中而产生的等离子体处理所述金属层叠膜。

7. 发明授权

US09208997B2 Method of etching copper layer and mask 有权
标题翻译：蚀刻铜层和掩模的方法
公开(公告)号：US09208997B2
公开(公告)日：2015-12-08
申请号：US14058621
申请日：2013-10-21
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki , Takashi Sone , Akitaka Shimizu , Fumiko Yamashita
IPC分类号： C23F1/00 , H01J37/32 , C23F1/02 , H01L21/311 , H01L21/3213 , C23F4/00
CPC分类号： H01J37/32082 , C23F1/02 , C23F4/00 , H01J2237/334 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.
摘要翻译：提供一种蚀刻目标物体的铜层的方法，包括在铜层上具有转印到铜层上的图案的掩模。该方法包括通过使用含有氢气的第一气体的等离子体蚀刻铜层; 并且通过使用沉积在目标物体上的含有氢气和气体的第二气体（以下称为“沉积气体”）的等离子体来处理目标物体。此外，交替地重复通过使用第一气体的等离子体对铜层的蚀刻和通过使用第二气体的等离子体来处理目标物体。

8. 发明申请

US20140110373A1 METHOD OF ETCHING COPPER LAYER AND MASK 有权
标题翻译：蚀刻铜层和掩模的方法
公开(公告)号：US20140110373A1
公开(公告)日：2014-04-24
申请号：US14058621
申请日：2013-10-21
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki , Takashi Sone , Akitaka Shimizu , Fumiko Yamashita
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01J37/32082 , C23F1/02 , C23F4/00 , H01J2237/334 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.
摘要翻译：提供一种蚀刻目标物体的铜层的方法，包括在铜层上具有转印到铜层上的图案的掩模。该方法包括通过使用含有氢气的第一气体的等离子体蚀刻铜层; 并且通过使用沉积在目标物体上的含有氢气和气体的第二气体（以下称为“沉积气体”）的等离子体来处理目标物体。此外，交替地重复通过使用第一气体的等离子体对铜层的蚀刻和通过使用第二气体的等离子体来处理目标物体。

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