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1. 发明授权

US12074076B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US12074076B2
公开(公告)日：2024-08-27
申请号：US17279810
申请日：2020-03-11
申请人： Hitachi High-Tech Corporation
发明人： Soichiro Eto
IPC分类号： H01L21/66 , G01B11/06 , H01J37/22 , H01J37/244 , H01J37/32 , H01L21/3065 , H01L21/67
CPC分类号： H01L22/26 , G01B11/06 , G01B11/0625 , G01B11/0633 , G01B11/0666 , G01B11/0683 , H01J37/22 , H01J37/244 , H01J37/32082 , H01J37/32917 , H01J37/32926 , H01J37/32963 , H01J37/32972 , H01L21/3065 , H01L21/67253 , H01L22/12 , H01J2237/2445 , H01J2237/24578 , H01J2237/3343
摘要： A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

2. 发明授权

US10619997B2 Method for measuring thickness variations in a layer of a multilayer semiconductor structure 有权
公开(公告)号：US10619997B2
公开(公告)日：2020-04-14
申请号：US15761664
申请日：2016-10-03
申请人： Soitec
发明人： Oleg Kononchuk
IPC分类号： G01B11/06 , H01L21/66 , G01B11/30 , H01L29/06 , H01L29/16
CPC分类号： G01B11/0641 , G01B11/0633 , G01B11/30 , H01L22/12 , H01L29/0649 , H01L29/16
摘要： A method for measuring thickness variations in a first layer of a semiconductor structure includes: acquiring an image of at least one zone of the surface of the structure, processing the acquired image so as to determine a map of the thickness variations of the first layer, and comparing the intensity of each pixel of the image with a predetermined calibration curve, the calibration curve being determined for a given thickness of a second layer of the structure, and measuring the thickness of the second layer in the at least one zone, -if the measured thickness is different from the thickness of the second layer considered in the calibration curve, using a correction curve to determine a corrected map of thickness variations of the first layer.

3. 发明申请

US20190219503A1 FIBER-OPTIC BASED MATERIAL PROPERTY MEASUREMENT SYSTEM AND RELATED METHODS 审中-公开
公开(公告)号：US20190219503A1
公开(公告)日：2019-07-18
申请号：US16311413
申请日：2017-05-12
申请人： University of Virginia Patent Foundation
发明人： Brian M. Foley , John T. Gaskins , Patrick E. Hopkins
IPC分类号： G01N21/55 , G01N21/17 , G01B11/06
CPC分类号： G01N21/55 , G01B11/0633 , G01N21/17 , G01N21/1717 , G01N2021/1731 , G01N2201/06113
摘要： An apparatus related method for measuring a property of a target material. The system may include a pump device that generates a pump beam. A modulation device may receive the pump beam and generate a modulated pump beam by modulating an intensity amplitude of the pump beam, which may be directed to the target material. A probe device may generate a probe beam, which is directed to the target material. A part of the probe beam may be reflected off of the target material, and has similar frequency characteristic as the modulated pump beam. A detection device may detect the reflected probe beam and produce a signal. An analyzing device may receive the signal and calculate the target material property by comparing the modulated frequency characteristics of the signal to those of the pump beam. At least one of the pump and the probe beams may be infrared light.

4. 发明申请

US20180350640A1 VAPOR SHIELD REPLACEMENT SYSTEM AND METHOD 审中-公开
公开(公告)号：US20180350640A1
公开(公告)日：2018-12-06
申请号：US15798827
申请日：2017-10-31
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Ping-Tse LIN , Chun-Chih LIN , Wen-Cheng LIEN , Monica HO
IPC分类号： H01L21/67 , G01B11/14 , G01N21/84 , F16P1/06 , H01L21/268 , H01L21/324
CPC分类号： H01L21/67115 , F16P1/06 , G01B11/0633 , G01B11/14 , G01N21/8422 , G01N2021/8427 , H01L21/268 , H01L21/324 , H01L21/67248 , H01L21/67253
摘要： A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.

5. 发明申请

US20180347966A1 METHOD FOR MEASURING THICKNESS VARIATIONS IN A LAYER OF A MULTILAYER SEMICONDUCTOR STRUCTURE 审中-公开
公开(公告)号：US20180347966A1
公开(公告)日：2018-12-06
申请号：US15761664
申请日：2016-10-03
申请人： Soitec
发明人： Oleg Kononchuk
IPC分类号： G01B11/06 , H01L21/66 , H01L29/16 , H01L29/06
CPC分类号： G01B11/30 , G01B11/0633 , H01L22/12
摘要： A method for measuring thickness variations in a first layer of a semiconductor structure includes: —acquiring an image of at least one zone of the surface of the structure —processing the acquired image so as to determine a map of the thickness variations of the first layer, and comparing the intensity of each pixel of the image with a predetermined calibration curve, the calibration curve being determined for a given thickness of a second layer of the, structure, and —measuring the thickness of the second layer in the at least one zone, —if the measured thickness is different from the thickness of the second layer considered in the calibration curve, and using a correction curve to determine a corrected map of thickness variations of the first layer.

6. 发明申请

US20180292326A1 Systems and Methods for Metrology with Layer-Specific Illumination Spectra 审中-公开
公开(公告)号：US20180292326A1
公开(公告)日：2018-10-11
申请号：US15608766
申请日：2017-05-30
申请人： KLA-Tencor Corporation
发明人： Amnon Manassen , Daria Negri , Andrew V. Hill , Ohad Bachar , Vladimir Levinski , Yuri Paskover
IPC分类号： G01N21/88 , G01B11/27 , G01N21/33 , G01N21/3563 , G01N21/95
CPC分类号： G01N21/8806 , G01B11/0633 , G01B11/272 , G01B2210/56 , G01N21/33 , G01N21/3563 , G01N21/8422 , G01N21/9505 , G01N21/956 , G01N2021/8438 , G01N2021/8845 , G01N2201/06113 , G03F7/70633
摘要： A metrology system includes an image device and a controller. The image device includes a spectrally-tunable illumination device and a detector to generate images of a sample having metrology target elements on two or more sample layers based on radiation emanating from the sample in response to illumination from the spectrally-tunable illumination device. The controller determines layer-specific imaging configurations of the imaging device to image the metrology target elements on the two or more sample layers within a selected image quality tolerance in which each layer-specific imaging configuration includes an illumination spectrum from the spectrally-tunable illumination device. The controller further receives one or more images of the metrology target elements on the two or more sample layers generated using the layer-specific imaging configurations. The controller further provides a metrology measurement based on the one or more images of the metrology target elements on the two or more sample layers.

7. 发明申请

US20180128591A1 NOISE REDUCTION TECHNIQUES, FRACTIONAL BI-SPECTRUM AND FRACTIONAL CROSS-CORRELATION, AND APPLICATIONS 审中-公开
公开(公告)号：US20180128591A1
公开(公告)日：2018-05-10
申请号：US15703236
申请日：2017-09-13
申请人： Faramarz FARAHI , Gelareh BABAIE , Mehrdad ABOLBASHARI
发明人： Faramarz FARAHI , Gelareh BABAIE , Mehrdad ABOLBASHARI
IPC分类号： G01B9/02 , G01B11/24 , G01B11/06
CPC分类号： G01B9/02007 , A61B3/101 , G01B9/02021 , G01B9/02032 , G01B9/02082 , G01B9/02084 , G01B11/0633 , G01B11/2441
摘要： A measurement method and system include illuminating an object to be measured with light at two different wavelengths and an incident angle; capturing an image of the object; detecting a frequency of an interference pattern from the image using Fractional Bi-Spectrum Analysis; and calculating a thickness of the object based on the Fractional Bi-Spectrum Analysis. The thickness is calculated based on a relationship between the thickness and the frequency of the interference pattern. The Fractional Bi-Spectrum Analysis is performed on a linear medium with the two different wavelengths being known.

8. 发明申请

US20180017484A1 LAMINATE SUBSTRATE MEASUREMENT METHOD, LAMINATE SUBSTRATE AND MEASUREMENT APPARATUS 审中-公开
公开(公告)号：US20180017484A1
公开(公告)日：2018-01-18
申请号：US15718198
申请日：2017-09-28
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Taiki YAMAMOTO , Taketsugu YAMAMOTO , Kenji KASAHARA
IPC分类号： G01N21/21 , G01B11/06 , G01N21/33
CPC分类号： G01N21/21 , G01B11/06 , G01B11/0633 , G01B11/0641 , G01N21/211 , G01N21/33 , G01N2021/213 , G01N2201/12
摘要： A measurement method for a laminate substrate is provided. The laminate substrate has: a base substrate; an absorption layer; and a measurement-target layer in this order. The measurement-target layer has a single measurement-target monolayer or a plurality of measurement-target monolayers. The method includes: emitting incident light including light with a wavelength shorter than a threshold wavelength from a side on which the measurement-target layer is positioned, and measuring reflected light and acquiring mutually independent 2n (n is a layer count of the measurement-target monolayers included in the measurement-target layer and is an integer equal to one or larger) or more reflected light-related values for wavelengths equal to the threshold wavelength or shorter; and calculating values related to the measurement-target monolayers for each measurement-target monolayer included in the measurement-target layer using the 2n or more reflected light-related values.

9. 发明授权

US09476707B2 Method and measuring device for measuring the distance of a surface, thickness and optical properties of an object 有权
标题翻译：用于测量物体的表面距离，厚度和光学性质的方法和测量装置
公开(公告)号：US09476707B2
公开(公告)日：2016-10-25
申请号：US14427127
申请日：2013-09-17
申请人： FOCALSPEC OY
发明人： Heimo Keranen
IPC分类号： G01C3/08 , G01N21/57 , G01N21/47 , G01N21/84 , G01B11/06 , G01B9/02 , G01N21/49
CPC分类号： G01C3/08 , G01B9/02091 , G01B11/0633 , G01B11/0691 , G01B2210/50 , G01N21/47 , G01N21/49 , G01N21/57 , G01N21/8422
摘要： In the measuring device and measuring method, confocal measuring principle is utilized. A certain component of an optical measurement signal is, from the point of view of both illumination and imaging, in focus only at one point on the virtual measuring surface. In the measuring device, the surface to be measured always hits a common focus point of the illumination and imaging, whereby a reflection is generated. The reflected optical signal is directed to a detector belonging to the imaging unit, where one picture element of the detector corresponds to a certain focus point, respectively. The optical efficiency received by each picture element is indicated. The light reflecting from the intersection of the virtual measuring surface and the surface of the object produces an intensity maximum for the detector. This maximum point is indicated and converted in the imaging unit (13) into the height of the surface of the object.
摘要翻译：在测量装置和测量方法中，利用共焦测量原理。从照明和成像的角度来看，光学测量信号的某个分量仅在虚拟测量表面上的一个点处聚焦。在测量装置中，要测量的表面总是碰到照明和成像的共同焦点，从而产生反射。反射的光信号被引导到属于成像单元的检测器，其中检测器的一个像素分别对应于特定的聚焦点。指示由每个像素接收的光学效率。从虚拟测量表面和物体表面的交点反射的光产生检测器的强度最大值。该最大点被指示并在成像单元（13）中转换成物体表面的高度。

10. 发明授权

US09417055B2 Apparatus for measuring thickness of thin film, system including the apparatus, and method for measuring thickness of thin film 有权
标题翻译：用于测量薄膜厚度的装置，包括该装置的系统以及用于测量薄膜厚度的方法
公开(公告)号：US09417055B2
公开(公告)日：2016-08-16
申请号：US14799107
申请日：2015-07-14
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Sung-Yoon Ryu , Sang-Kil Lee , Chung-Sam Jun , Woo-Seok Ko , Ho-Jeong Kwak , Souk Kim , Kwan-Woo Ryu , Yu-Sin Yang
IPC分类号： G01B11/28 , G01B11/06
CPC分类号： G01B11/0633
摘要： An apparatus and a system for measuring the thickness of a thin film are provided. The apparatus includes a signal detector, a Fast Fourier Transform (FFT) generator, an Inverse Fast Fourier Transform (IFFT) generator, and a thickness analyzer. The signal detector detects an electric field signal with respect to a reflected light that is reflected from a thin film. The FFT generator performs FFT with respect to the electric field signal to separate a DC component from an AC component of the electric field signal. The IFFT generator receives the separated AC component of the electric field signal, performs IFFT with respect to the AC component, and extracts a phase value of the AC component. The thickness analyzer measures the thickness of the thin film using the extracted phase value.
摘要翻译：提供了用于测量薄膜厚度的装置和系统。该装置包括信号检测器，快速傅里叶变换（FFT）发生器，快速傅里叶逆变换（IFFT）发生器和厚度分析器。信号检测器检测相对于从薄膜反射的反射光的电场信号。 FFT发生器相对于电场信号执行FFT，以将DC分量与电场信号的AC分量分离。 IFFT发生器接收电场信号的分离的AC分量，相对于AC分量执行IFFT，并提取AC分量的相位值。厚度分析器使用提取的相位值来测量薄膜的厚度。

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