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1. 发明授权

US5942454A Highly corrosion-resistant silicon carbide product 失效
标题翻译：高耐腐蚀碳化硅产品
公开(公告)号：US5942454A
公开(公告)日：1999-08-24
申请号：US917728
申请日：1997-08-27
申请人： Takahiro Nakayama , Nobuo Kageyama , Atsuyoshi Takenaka , Yoichi Kamisuki
发明人： Takahiro Nakayama , Nobuo Kageyama , Atsuyoshi Takenaka , Yoichi Kamisuki
IPC分类号： C04B35/565 , C04B35/573 , C04B35/569
CPC分类号： C04B35/573 , C04B35/565 , Y10S156/914
摘要： A highly corrosion-resistant silicon carbide product consisting of a sintered body having a content of .alpha.-form silicon carbide of at least 90 wt %, wherein the content of iron is at most 1 ppm, the content of aluminum is at most 5 ppm, and the content of calcium is at most 3 ppm.
摘要翻译：由具有至少90重量％的α-型碳化硅含量的烧结体组成的高耐腐蚀性碳化硅产品，其中铁含量至多为1ppm，铝含量至多为5ppm，钙含量在3ppm以下。

2. 发明授权

US5925310A Method of making a silicon carbide product 失效
标题翻译：制造碳化硅产品的方法
公开(公告)号：US5925310A
公开(公告)日：1999-07-20
申请号：US824755
申请日：1997-03-26
申请人： Takahiro Nakayama , Nobuo Kageyama , Takashi Chikaso
发明人： Takahiro Nakayama , Nobuo Kageyama , Takashi Chikaso
IPC分类号： B28B7/18 , C04B35/565 , C04B35/573 , C30B35/00 , H01L21/22 , C04B35/56
CPC分类号： C04B35/573 , C30B35/002
摘要： A method of making a perforated silicon carbide product in a shorter time and with less labor work to achieve a lower cost and high yield. Openings 13a, 13b are previously formed in a mold 11, and inserts 14 are inserted into the openings to project toward the inside of the mold. A slurry 15 composed of a mixture of a silicon carbide powder, an organic binder and water is put in the mold to conduct a slip casting molding method whereby a molded green product with perforation 16 is obtained.
摘要翻译：一种在较短时间内制造穿孔碳化硅产品并且以较少的劳动力来实现较低成本和高产率的方法。开口13a，13b预先形成在模具11中，并且插入件14插入到开口中以朝向模具的内部突出。将由碳化硅粉末，有机粘合剂和水的混合物构成的浆料15放入模具中以进行滑移浇铸成型方法，由此获得具有穿孔16的模制的绿色产品。

3. 发明授权

US5179049A Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof 失效
标题翻译：用于设备的半导体和高纯度碳化硅部件的热处理装置及其制造方法
公开(公告)号：US5179049A
公开(公告)日：1993-01-12
申请号：US794945
申请日：1991-11-20
申请人： Hideji Numata , Takuro Ono , Nobuo Kageyama , Koji Furukawa , Ryuhei Makimura
发明人： Hideji Numata , Takuro Ono , Nobuo Kageyama , Koji Furukawa , Ryuhei Makimura
IPC分类号： C04B35/573 , C30B31/10 , C30B31/14
CPC分类号： C30B31/10 , C04B35/573 , C30B31/14
摘要： High purity silicon carbide parts for a heat treating apparatuses for semiconductors; composed mainly of .alpha.-type silicon carbide and silicon; characterized in that a particle sizes of the .alpha.-type silicon carbide crystals composing the high purity silicon carbide parts are not larger than 44 .mu.m; a weight mean particle size of the .alpha.-type silicon carbide crystals is in a range from 2 to 25 .mu.m; high purity silicon is filled up among the particles of the .alpha.-type silicon carbide crystals; and a content of iron as an impurity element contained in the high purity silicon carbide parts is not larger than 5 ppm.

4. 发明授权

US06988886B2 Thermal treatment system for semiconductors 失效
标题翻译：半导体热处理系统
公开(公告)号：US06988886B2
公开(公告)日：2006-01-24
申请号：US10809705
申请日：2004-03-26
申请人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
发明人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
IPC分类号： F27D1/18
CPC分类号： C23C16/4409 , C23C16/46 , C30B33/02 , H01L21/67109
摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).
摘要翻译：一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递系数为50〜2000W /（m 2·K）。

5. 发明申请

US20050053890A1 Thermal treatment system for semiconductors 失效
标题翻译：半导体热处理系统
公开(公告)号：US20050053890A1
公开(公告)日：2005-03-10
申请号：US10809705
申请日：2004-03-26
申请人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
发明人： Masaaki Takata , Nobuo Kageyama , Susumu Otaguro , Jiro Nishihama
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , C30B33/02 , H01L21/00 , F27D1/00
CPC分类号： C23C16/4409 , C23C16/46 , C30B33/02 , H01L21/67109
摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).
摘要翻译：一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递系数为50至2,000W /（m 2 K）。

6. 发明授权

US5882807A Jig for heat treatment and process for fabricating the jig 失效
标题翻译：用于热处理的夹具和用于制造夹具的工艺
公开(公告)号：US5882807A
公开(公告)日：1999-03-16
申请号：US770239
申请日：1996-12-20
申请人： Yoshio Funato , Koji Furukawa , Hisao Yamamoto , Nobuo Kageyama
发明人： Yoshio Funato , Koji Furukawa , Hisao Yamamoto , Nobuo Kageyama
IPC分类号： C04B41/52 , C04B41/89 , C23C16/32 , H01L21/00 , C04B35/56
CPC分类号： H01L21/67115 , C04B41/009 , C04B41/52 , C04B41/89 , C23C16/325 , C04B2111/0025 , Y10T428/265
摘要： A jig used for heat treatment made from an SiC-coated silicon carbide material, wherein the SiC film is coated by the CVD method on a silicon carbide matrix in which silicon has been impregnated and wherein there are no pores with a diameter of 2 .mu.m or larger in the outer layer of the matrix within 200 .mu.m from the interface of the SiC film and the silicon carbide matrix when observed by a scanning electron microscope at a magnification of 400 times. The jig is manufactured by producing an SiC film on the surface of a silicon carbide matrix in which silicon has been impregnated by introducing a raw material compound for producing the SiC film and forming the SiC film at a temperature from 1000.degree. C. to 1290.degree. C. under a pressure from 500 to 760 Torr in a non-oxidative atmosphere. The jig exhibits superior resistance to high temperature heating cycles and excellent high thermal shock resistance required for heat treatment in semiconductor manufacturing.
摘要翻译：用于由SiC涂覆的碳化硅材料制成的热处理的夹具，其中通过CVD方法将SiC膜涂覆在已经浸渍了硅的碳化硅基体上，并且其中没有直径为2μm的孔或者当通过扫描电子显微镜以400倍的倍数观察时，从SiC膜和碳化硅基体的界面在200μm以内的基体的外层中，或者更大。通过在碳化硅基体的表面上制造SiC膜来制造夹具，其中通过引入用于制造SiC膜的原料化合物并在1000℃至1290℃的温度下形成SiC膜来浸渍硅。在非氧化性气氛下，在500至760托的压力下。夹具具有优异的耐高温加热循环性能以及半导体制造中热处理所需的优异的耐热冲击性。

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