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1. 发明授权

US4565584A Method of producing single crystal film utilizing a two-step heat treatment 失效
标题翻译：利用两步热处理制备单晶膜的方法
公开(公告)号：US4565584A
公开(公告)日：1986-01-21
申请号：US460801
申请日：1983-01-25
申请人： Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
发明人： Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
IPC分类号： H01L21/20 , C30B1/02 , C30B1/08 , H01L21/31 , H01L21/263 , H01L21/205
CPC分类号： C30B1/08 , C30B1/023 , Y10S148/003 , Y10S148/09 , Y10S148/123 , Y10S438/909
摘要： An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
摘要翻译：连续覆盖单晶基板和绝缘膜的暴露表面的非晶或多晶膜沉积在超高真空中，然后进行热处理。在远低于现有技术方法的温度下对该膜进行固相外延生长，从而形成单晶膜。

2. 发明授权

US4463028A Method for preparing composite or elementary semi-conducting polycrystalline films 失效
标题翻译：制备复合或半导体多晶薄膜的方法
公开(公告)号：US4463028A
公开(公告)日：1984-07-31
申请号：US289695
申请日：1981-08-03
申请人： Lucien D. Laude
发明人： Lucien D. Laude
IPC分类号： C30B1/02 , C30B1/08 , B05D5/12
CPC分类号： C30B1/08 , C30B1/023 , Y10S148/093 , Y10S148/094
摘要： There is described a method for preparing polycrystalline semi-conducting films comprised of two elements respectively from Groups III and V, or Groups II and VI of the Periodic Table, by irradiating with a laser beam a film which is comprised of at least two layers from elements selected with a stoichiometric ratio, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method is comprised of irradiating said film with a structured laser beam to cause crystallizing into crystallites which are regularly aligned and with a size at least equal to the thickness of the resulting film.
摘要翻译：描述了通过用激光束照射由两个元素组成的多晶半导体膜，该多晶半导体膜由分别来自元素周期表的III和V族或II族和VI族的元素组成，该膜由至少两层所述膜以非化学计量比选择，所述膜沉积在非晶体衬底上并涂覆有保护层，该方法包括用结构化的激光束照射所述膜以使结晶成规则排列的微晶，并且与尺寸至少等于所得膜的厚度。

3. 发明授权

US3219496A Method of producing columnar crystal texture in sintered permanent magnets 失效
标题翻译：在烧结永磁体中制造柱状晶体结构的方法
公开(公告)号：US3219496A
公开(公告)日：1965-11-23
申请号：US25783563
申请日：1963-02-12
申请人： MAGNETFABRIK BONN GEWERKSCHAFT
发明人： STEINGROVER ERICH A , HEIMKE GUNTHER F A
IPC分类号： B22F3/00 , C22C1/04 , C30B1/02 , C30B1/08 , C30B31/02 , H01F1/04 , H01F1/08
CPC分类号： H01F1/086 , B22F3/00 , C22C1/04 , C30B1/02 , C30B1/08 , C30B29/52 , C30B31/02 , H01F1/04
摘要： Sintered permanent magnets containing .Co.10-40 .Ni.10-22 .Al.5-14 .Cu.0-10 .Ti.0-10 .Si.0-3 .other elements.0-1 .Fe.balance are heat-treated to produce columnar crystallization by heating them to a temperature which is within 100 DEG C. of the melting point, and then subjecting them to a temperature gradient in the desired direction of crystallization. The gradient may be at least 10 DEG C./cm. and may be achieved by moving the magnets in a direction parallel to the desired crystal orientation from a higher to a lower temperature zone. Treatment in a magnetic field may follow immediately after recrystallization. Heating of the magnets may be by induction or by electron beam.

4. 发明授权

US10060044B2 Polarizing apparatus and polarizing method 有权
公开(公告)号：US10060044B2
公开(公告)日：2018-08-28
申请号：US15290092
申请日：2016-10-11
申请人： Xianfeng Chen
发明人： Xianfeng Chen
IPC分类号： C30B1/04 , C30B1/02 , C30B1/08 , C30B28/02 , C30B29/32 , C30B30/02 , H01L41/39 , H01L41/257 , H01L41/318 , H01L41/187
CPC分类号： C30B1/023 , C30B1/08 , C30B28/02 , C30B29/32 , C30B30/02 , H01L41/1876 , H01L41/257 , H01L41/318 , H01L41/39
摘要： A polarizing apparatus includes an electromagnetic wave irradiator to irradiate a target film with an electromagnetic wave to heat the target film; and an electric charge generator to apply an electric field to the target film.

5. 发明授权

US09551087B2 Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure 有权
标题翻译：硫属化合物的二维大面积生长方法，CMOS型结构体的制造方法，硫属化合物的膜，含有硫属化合物的电子的电子器件，和CMOS型结构
公开(公告)号：US09551087B2
公开(公告)日：2017-01-24
申请号：US14778863
申请日：2014-03-19
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Sun-Kook Kim , Jong-Soo Rhyee
IPC分类号： H01L21/8238 , C30B1/10 , C30B29/46 , C30B1/02 , C30B13/24 , H01L21/02 , H01L29/786 , H01L27/092 , H01L27/10 , C01B19/00 , C30B1/04 , C30B1/08 , C30B29/16 , H01L21/8256
CPC分类号： C30B1/10 , C01B19/00 , C01B19/007 , C23C16/305 , C30B1/02 , C30B1/04 , C30B1/08 , C30B13/24 , C30B29/16 , C30B29/46 , H01L21/02381 , H01L21/02568 , H01L21/02614 , H01L21/0262 , H01L21/02667 , H01L21/823807 , H01L21/8256 , H01L27/092 , H01L27/101 , H01L29/78681
摘要： Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.
摘要翻译：本发明提供一种硫属化合物的二维大面积生长方法，该方法包括：在基板上沉积过渡金属元素或V族元素的膜; 然后在膜内均匀扩散蒸发的硫属元素，汽化的硫属前体化合物或由M'X'2 +δ表示的硫属化合物; 然后，通过后加热形成由MX2表示的硫属化合物，形成由MX2表示的硫属化合物的膜。

6. 发明授权

US07585714B2 Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus 有权
标题翻译：半导体器件，半导体器件和激光照射设备的制造方法
公开(公告)号：US07585714B2
公开(公告)日：2009-09-08
申请号：US11637914
申请日：2006-12-13
申请人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
发明人： Shunpei Yamazaki , Osamu Nakamura , Hironobu Shoji
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L21/02686 , C30B1/023 , C30B1/08 , C30B29/06 , H01L21/02683 , H01L21/2026
摘要： It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method.A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
摘要翻译：本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀性的同时使半导体膜均匀结晶。本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件方法。一种制造半导体器件的方法，包括以下步骤：用离子掺杂方法将第一稀有气体添加到形成在绝缘表面上的半导体膜上，并且在其中加入第一稀有气体的激光照射半导体膜，第二惰性气体，其中当照射激光时，在加入了第一稀有气体的情况下将磁场施加到半导体膜。

7. 发明授权

US4900394A Process for producing single crystals 失效
标题翻译：单晶生产工艺
公开(公告)号：US4900394A
公开(公告)日：1990-02-13
申请号：US768160
申请日：1985-08-22
申请人： William L. Mankins
发明人： William L. Mankins
IPC分类号： C22C32/00 , C30B1/08
CPC分类号： C22C32/0026 , C30B1/08 , Y10S117/915
摘要： A process for producing a single crystal object made of a nickel-base, O.D.S., gamma prime stengthened alloy which involves fusion welding a seed crystal to a mass of such alloy in rcrystallizable state and thereafter zone annealing to grow a single crystal through the mass of alloy.
摘要翻译：一种用于制造由镍基，ODS，γ主要加长合金制成的单晶体的方法，其包括将晶种熔融到可结晶状态的这种合金块中，然后进行区域退火以通过质量块生长单晶合金。

8. 发明授权

US4465546A Method of growing polycrystalline and monocrystalline bodies of volatile 2,6 and 3,5 compounds in graphite crucibles by self-sealing and self-releasing techniques 失效
标题翻译：通过自密封和自动释放技术在石墨坩埚中生长挥发性2,6和3,5化合物的多晶和单晶体的方法
公开(公告)号：US4465546A
公开(公告)日：1984-08-14
申请号：US413929
申请日：1982-09-01
申请人： Brian J. Fitzpatrick , Thomas F. McGee, III
发明人： Brian J. Fitzpatrick , Thomas F. McGee, III
IPC分类号： C01G9/08 , C01B17/20 , C01B19/04 , C01B25/08 , C01G9/00 , C01G11/00 , C01G11/02 , C01G28/00 , C30B1/08 , C30B13/00 , C30B13/14 , C30B29/40 , C30B29/48 , C30B15/10
CPC分类号： C30B13/14 , C30B1/08 , C30B13/00 , C30B29/48 , Y10S117/90
摘要： A large polycrystalline body of a 2,6 or 3,5 volatile compound is produced in a graphite crucible under low external pressure by passing a narrow molten zone through a charge of the compound contained in the graphite crucible the interior of which is coated with pyrolytic graphite. By a similar technique, but by use of a hot zone cooler then the molten zone, the polycrystalline body is converted to a monocrystalline body.
摘要翻译：通过使包含在石墨坩埚中的化合物的电荷通过狭窄的熔融区域，在低外部压力下在石墨坩埚中产生2,6或3,5种挥发性化合物的大多晶体，其内部涂覆有热解石墨。通过类似的技术，但是通过使用热区域冷却器，然后熔融区域，多晶体转变为单晶体。

9. 发明授权

US4372989A Process for producing coarse-grain crystalline/mono-crystalline metal and alloy films 失效
标题翻译：粗晶晶/单晶金属和合金膜的制造方法
公开(公告)号：US4372989A
公开(公告)日：1983-02-08
申请号：US157826
申请日：1980-06-09
申请人： Guenther Menzel
发明人： Guenther Menzel
IPC分类号： H05K3/10 , C23C14/00 , C23C14/24 , C23C14/34 , C30B1/02 , C30B1/08 , C30B13/06 , C30B29/52 , H01L31/04 , H05K3/12 , B05D3/06
CPC分类号： C30B1/08 , C30B1/023 , Y10S117/904 , Y10S148/092 , Y10S148/093
摘要： Coarse-grained crystalline or monocrystalline metal or alloy regions are produced on substrates composed of a material selected from the group consisting of a ceramic, a glass and silicon, and which are provided with a layer of an amorphous or disordered metallic film, for example tantalum, by controllably irradiating select regions of the amorphous film with a focused beam of thermal-energy and/or light-energy, such as obtained from a focused laser beam, while substantially simultaneously maintaining the temperature of such substrate at about the temperature utilized in depositing the amorphous film on the substrate, whereby crystallization seeds are generated at the point of beam irradiation and function as a starting point for the crystalline or monocrystalline front on the metallic surface. Via controlled beam guidance, as by a computer, over the amorphous metal coated substrate surface, the crystallization front is extended uniformly in a desired path along the irradiated surface. The process is useful in producing metallizations for integrated semiconductor circuits, manufacture of contact electrodes for silicon solar cells, etc.
摘要翻译：在由选自陶瓷，玻璃和硅的材料组成的基板上制造粗晶体的晶体或单晶金属或合金区域，并且设置有非晶或无序金属膜的层，例如钽通过以聚焦的激光束获得的聚焦的热能和/或光能的光束可控地照射非晶膜的选择区域，同时基本上同时将这种衬底的温度保持在大约在沉积中使用的温度基板上的非晶膜，从而在光束照射点产生结晶晶种，并且作为金属表面上晶体或单晶前沿的起始点。通过控制的光束引导，如通过计算机，在无定形金属涂覆的基底表面上，结晶前沿沿着照射的表面在期望的路径中均匀地延伸。该方法可用于制造用于集成半导体电路的金属化，制造用于硅太阳能电池的接触电极等。

10. 发明申请

US20170081778A1 TWO-DIMENSIONAL LARGE-AREA GROWTH METHOD FOR CHALCOGEN COMPOUND, METHOD FOR MANUFACTURING CMOS-TYPE STRUCTURE, FILM OF CHALCOGEN COMPOUND, ELECTRONIC DEVICE COMPRISING FILM OF CHALCOGEN COMPOUND, AND CMOS-TYPE STRUCTURE 审中-公开
公开(公告)号：US20170081778A1
公开(公告)日：2017-03-23
申请号：US15368157
申请日：2016-12-02
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Sun-Kook KIM , Jong-Soo RHYEE
IPC分类号： C30B1/10 , C30B1/08 , C01B19/00 , H01L21/02 , H01L21/8238 , C30B1/04 , C30B29/46
CPC分类号： C30B1/10 , C01B19/00 , C01B19/007 , C23C16/305 , C30B1/02 , C30B1/04 , C30B1/08 , C30B13/24 , C30B29/16 , C30B29/46 , H01L21/02381 , H01L21/02568 , H01L21/02614 , H01L21/0262 , H01L21/02667 , H01L21/823807 , H01L21/8256 , H01L27/092 , H01L27/101 , H01L29/78681
摘要： Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

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