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1. 发明授权

US12074235B2 Seeded solid-phase crystallization of transparent conducting vanadate perovskites 有权
公开(公告)号：US12074235B2
公开(公告)日：2024-08-27
申请号：US17015428
申请日：2020-09-09
申请人： Wisconsin Alumni Research Foundation
发明人： Paul Gregory Evans , Thomas Francis Kuech , Donald E. Savage , Yajin Chen , Samuel Marks
IPC分类号： B32B9/00 , C01G31/02 , C23C14/08 , C23C14/35 , C23C14/58 , C30B28/02 , H01L31/0232 , H01L31/08 , B82Y30/00 , B82Y40/00 , C30B29/30
CPC分类号： H01L31/0232 , C01G31/02 , C23C14/088 , C23C14/35 , C23C14/5806 , C30B28/02 , H01L31/085 , B82Y30/00 , B82Y40/00 , C01P2002/34 , C30B29/30
摘要： Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are made by forming a layer of amorphous vanadate perovskite precursor around a plurality of nanoscale, crystalline, perovskite oxide seeds and heating the layer of amorphous vanadate perovskite precursor at a temperature that favors lateral vanadate perovskite crystal growth from the perovskite oxide seeds over homogeneous crystal nucleation within the layer of amorphous vanadate perovskite precursor material. The crystallization processes can form the desired vanadate perovskite phase directly or via a transformation in a controlled gas environment from an initial crystallized vanadate perovskite phase that has a higher oxidation state.

2. 发明公开

US20230260785A1 METHOD FOR MANUFACTURING SPUTTERING TARGET, METHOD FOR FORMING OXIDE FILM, AND TRANSISTOR 审中-公开
公开(公告)号：US20230260785A1
公开(公告)日：2023-08-17
申请号：US18137572
申请日：2023-04-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Masashi OOTA , Yoichi KUROSAWA , Noritaka ISHIHARA
IPC分类号： H01L21/02 , C23C14/08 , C01G15/00 , B82Y30/00 , C23C14/34 , C30B23/08 , C30B29/22 , H01J37/34 , C30B1/04 , C30B28/02 , C30B29/68 , H01L29/04 , H01L29/24 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02631 , C23C14/08 , C01G15/006 , B82Y30/00 , C23C14/086 , C23C14/3414 , C30B23/08 , C30B29/22 , H01J37/3429 , C30B1/04 , C30B28/02 , C30B29/68 , H01L21/02565 , H01L21/02609 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696 , C01P2002/32 , C01P2002/72 , C01P2002/85 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2004/64 , H01J2237/081 , H01J2237/3322 , H01J2237/3323
摘要： A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

3. 发明申请

US20170178904A1 METHOD FOR MANUFACTURING SPUTTERING TARGET, METHOD FOR FORMING OXIDE FILM, AND TRANSISTOR 审中-公开
公开(公告)号：US20170178904A1
公开(公告)日：2017-06-22
申请号：US15451715
申请日：2017-03-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Masashi OOTA , Yoichi KUROSAWA , Noritaka ISHIHARA
IPC分类号： H01L21/02 , C23C14/08 , C30B1/04 , C30B28/02 , C30B29/22 , H01L29/04 , H01J37/34 , C30B29/68 , H01L29/66 , H01L29/786 , H01L29/24 , C23C14/34 , C30B23/08
CPC分类号： H01L21/02631 , B82Y30/00 , C01G15/006 , C01P2002/32 , C01P2002/72 , C01P2002/85 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C23C14/08 , C23C14/086 , C23C14/3414 , C30B1/04 , C30B23/08 , C30B28/02 , C30B29/22 , C30B29/68 , H01J37/3429 , H01J2237/081 , H01J2237/3322 , H01J2237/3323 , H01L21/02565 , H01L21/02609 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

4. 发明授权

US07329936B2 Mask for sequential lateral solidification and crystallization method using thereof 有权
标题翻译：用于顺序侧向固化和使用其的结晶方法的掩模
公开(公告)号：US07329936B2
公开(公告)日：2008-02-12
申请号：US11029395
申请日：2005-01-06
申请人： Yun-Ho Jung
发明人： Yun-Ho Jung
IPC分类号： H01L31/0232
CPC分类号： B23K26/0661 , B23K26/066 , C30B1/023 , C30B13/22 , C30B28/02 , C30B29/06 , H01L21/02532 , H01L21/0268 , H01L21/02691 , Y10S438/942 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and first and second side portions at both sides of the central portion; moving the substrate and the mask relative to one another such that the first side portion of each transmissive region overlaps the central portion of each first irradiated region; and irradiating the laser beam onto the amorphous silicon layer a second time through the mask to form a plurality of second irradiated regions corresponding to the plurality of transmissive regions.
摘要翻译：一种形成多晶硅层的方法包括：在非晶硅层上设置掩模，所述掩模具有多个透射区域，所述多个透射区域沿第一方向彼此间隔开设置，并且第二方向与第一方向基本垂直，每个透射区域具有中心部分，以及沿着第一方向与中心部分的相对端相邻的第一和第二侧部分，并且其中每个部分具有沿着第一方向的长度和沿第二方向的宽度，并且其中第一和第二部分的宽度沿着第一方向远离中心部分减小; 首先通过掩模将激光束照射到非晶硅层上，以形成与多个透射区域相对应的多个第一照射区域，每个第一照射区域具有中心部分，并且第一和第二侧部分位于中心部分使所述基板和所述掩模相对于彼此移动，使得每个透射区域的第一侧部分与每个第一照射区域的中心部分重叠; 以及通过所述掩模将所述激光束第二次照射到所述非晶硅层上，以形成对应于所述多个透射区域的多个第二照射区域。

5. 发明申请

US20180223448A1 APPARATUS AND METHOD FOR SEMICONDUCTOR POLYCRYSTALLIZATION 审中-公开
公开(公告)号：US20180223448A1
公开(公告)日：2018-08-09
申请号：US15571629
申请日：2017-06-01
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Yoonsung Um
IPC分类号： C30B28/02 , C30B33/02 , H01L21/02 , H01L21/67
CPC分类号： C30B28/02 , C30B1/023 , C30B29/06 , C30B33/02 , H01L21/02532 , H01L21/02554 , H01L21/02565 , H01L21/02667 , H01L21/67109
摘要： Apparatus and method for semiconductor polycrystallization are provided. The apparatus includes a plurality of ejector outlets for ejecting a heated gas to polycrystallize an amorphous semiconductor to produce a polycrystalline semiconductor.

6. 发明授权

US09853181B2 Method for preparing a recrystallised silicon substrate with large crystallites 有权
公开(公告)号：US09853181B2
公开(公告)日：2017-12-26
申请号：US15025498
申请日：2014-09-24
申请人： COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Jean-Marie Lebrun , Jean-Paul Garandet , Jean-Michel Missiaen , Céline Pascal
IPC分类号： H01L21/02 , H01L31/068 , H01L31/18 , C30B1/02 , C30B29/06 , C30B33/02 , C30B28/02 , H01L31/0368
CPC分类号： H01L31/1872 , C30B1/02 , C30B28/02 , C30B29/06 , C30B33/02 , H01L21/02532 , H01L21/02595 , H01L21/02667 , H01L31/03682 , H01L31/068 , H01L31/182 , Y02E10/50 , Y02P70/521
摘要： A method for preparing silicon substrate having average crystallite size greater than or equal to 20 μm, including at least the steps of: (i) providing polycrystalline silicon substrate of which average grain size is less than or equal to 10 μm; (ii) subjecting substrate to overall homogeneous plastic deformation, at temperature of at least 1000° C.; (iii) subjecting substrate to localized plastic deformation in plurality of areas of substrate, called external stress areas, spacing between two consecutive areas being at least 20 μm, local deformation of substrate being strictly greater than overall deformation carried out in step (ii); step (iii) being able to be carried out subsequent to or simultaneous to step (ii); and (iv) subjecting substrate obtained in step (iii) to recrystallization heat treatment in solid phase, at temperature strictly greater than temperature used in step (ii), in order to obtain desired substrate.

7. 发明申请

US20170174574A1 ALUMINA SINTERED BODY AND BASE SUBSTRATE FOR OPTICAL DEVICE 审中-公开
公开(公告)号：US20170174574A1
公开(公告)日：2017-06-22
申请号：US15447670
申请日：2017-03-02
申请人： NGK INSULATORS, LTD.
发明人： Kiyoshi MATSUSHIMA , Morimichi WATANABE , Kei SATO , Tsutomu NANATAKI
IPC分类号： C04B35/115 , C01F7/30 , C04B35/634 , C04B35/632 , C30B1/10 , C04B35/638 , C04B35/645 , C30B1/04 , C30B29/20 , C01F7/02 , C04B35/63
CPC分类号： C04B35/115 , C01F7/02 , C01F7/30 , C01F7/441 , C01F7/442 , C01P2002/72 , C01P2004/20 , C01P2004/54 , C01P2004/61 , C01P2006/80 , C04B35/6268 , C04B35/6303 , C04B35/632 , C04B35/6342 , C04B35/638 , C04B35/645 , C04B35/6455 , C04B2235/3206 , C04B2235/3208 , C04B2235/3217 , C04B2235/322 , C04B2235/3418 , C04B2235/425 , C04B2235/445 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/612 , C04B2235/656 , C04B2235/6567 , C04B2235/72 , C04B2235/721 , C04B2235/725 , C04B2235/77 , C04B2235/787 , C04B2235/9653 , C04B2235/9692 , C30B1/04 , C30B1/10 , C30B1/12 , C30B28/02 , C30B29/20 , G02B1/00 , H01L33/0079 , H01L33/28 , H01L33/32
摘要： An alumina sintered body according to the present invention has a degree of c-plane orientation of 90% or more as determined by Lotgering's method from an X-ray diffraction profile obtained by irradiating a plate surface with X-rays in a range of 2θ=20° to 70°. The alumina sintered body has no pores when a cross-sectional surface formed in a direction perpendicular to the plate surface is polished using an Ar+ ion beam and a mask and is examined under a scanning electron microscope at a magnification of 5,000 times. The alumina sintered body has a total mass fraction of impurity elements other than Mg and C of 100 ppm or less. This alumina sintered body has a high degree of orientation, high density, and high purity and thus has a higher optical translucency than those known in the art.

8. 发明授权

US09633842B2 Metal induced nanocrystallization of amorphous semiconductor quantum dots 有权
公开(公告)号：US09633842B2
公开(公告)日：2017-04-25
申请号：US14774226
申请日：2014-03-07
申请人： Okinawa Institute of Science and Technology School Corporation
发明人： Vidya Dhar Singh , Cathal Cassidy , Mukhles Ibrahim Sowwan
IPC分类号： H01L21/02 , C30B1/02 , C30B28/02 , C30B29/06 , C30B29/60 , H01L29/04 , H01L29/16 , C01B33/021
CPC分类号： H01L21/02658 , C01B33/021 , C30B1/023 , C30B28/02 , C30B29/06 , C30B29/60 , H01L21/02532 , H01L21/02601 , H01L21/02631 , H01L29/04 , H01L29/16
摘要： A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semi-conductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.

9. 发明授权

US09267199B2 Method for manufacturing sputtering target, method for forming oxide film, and transistor 有权
标题翻译：溅射靶的制造方法，氧化膜的形成方法以及晶体管
公开(公告)号：US09267199B2
公开(公告)日：2016-02-23
申请号：US14187960
申请日：2014-02-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Masashi Tsubuku , Masashi Oota , Yoichi Kurosawa , Noritaka Ishihara
IPC分类号： C23C14/08 , C01G15/00 , B82Y30/00 , C23C14/34 , H01B1/08
CPC分类号： H01L21/02631 , B82Y30/00 , C01G15/006 , C01P2002/32 , C01P2002/72 , C01P2002/85 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C23C14/08 , C23C14/086 , C23C14/3414 , C30B1/04 , C30B23/08 , C30B28/02 , C30B29/22 , C30B29/68 , H01J37/3429 , H01J2237/081 , H01J2237/3322 , H01J2237/3323 , H01L21/02565 , H01L21/02609 , H01L29/045 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.
摘要翻译：提供一种可以形成具有少量缺陷的氧化物半导体膜的溅射靶的制造方法。或者，形成具有少量缺陷的氧化物半导体膜。提供一种制造溅射靶的方法，其包括以下步骤：形成多晶In-M-Zn氧化物（M表示选自铝，钛，镓，钇，锆，镧，铯，钕和铪中的金属）粉末，通过混合，烧结和研磨氧化铟，金属氧化物和氧化锌; 通过混合多晶In-M-Zn氧化物粉末和氧化锌粉末形成混合物; 通过压实混合物形成压块; 并烧结成型。

10. 发明申请

US20160042948A1 METAL INDUCED NANOCRYSTALLIZATION OF AMORPHOUS SEMICONDUCTOR QUANTUM DOTS 有权
标题翻译：非晶半导体量子点的金属诱导纳米结构
公开(公告)号：US20160042948A1
公开(公告)日：2016-02-11
申请号：US14774226
申请日：2014-03-07
申请人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
发明人： Singh VIDYA DHAR , Cathal CASSIDY , Mukhles Ibrahim SOWWAN
IPC分类号： H01L21/02 , H01L29/04 , H01L29/16
CPC分类号： H01L21/02658 , C01B33/021 , C30B1/023 , C30B28/02 , C30B29/06 , C30B29/60 , H01L21/02532 , H01L21/02601 , H01L21/02631 , H01L29/04 , H01L29/16
摘要： A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semi-conductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.
摘要翻译：形成结晶化半导体颗粒的方法包括：在真空聚集室中形成非晶半导体颗粒; 将形成在真空聚集室中的非晶半导体颗粒输送到其中保持基板的真空沉积室; 以及将金属催化剂的蒸气施加到所述非晶半导体颗粒上，同时仍然在所述真空沉积室中转移到所述基板上，以在所述运输过程中经由所述金属催化剂引起至少部分所述非晶半导体颗粒的结晶，由此沉积将结合了金属催化剂的半导体颗粒结合到基板上。

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