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    • 2. 发明授权
    • Process for producing coarse-grain crystalline/mono-crystalline metal
and alloy films
    • 粗晶晶/单晶金属和合金膜的制造方法
    • US4372989A
    • 1983-02-08
    • US157826
    • 1980-06-09
    • Guenther Menzel
    • Guenther Menzel
    • H05K3/10C23C14/00C23C14/24C23C14/34C30B1/02C30B1/08C30B13/06C30B29/52H01L31/04H05K3/12B05D3/06
    • C30B1/08C30B1/023Y10S117/904Y10S148/092Y10S148/093
    • Coarse-grained crystalline or monocrystalline metal or alloy regions are produced on substrates composed of a material selected from the group consisting of a ceramic, a glass and silicon, and which are provided with a layer of an amorphous or disordered metallic film, for example tantalum, by controllably irradiating select regions of the amorphous film with a focused beam of thermal-energy and/or light-energy, such as obtained from a focused laser beam, while substantially simultaneously maintaining the temperature of such substrate at about the temperature utilized in depositing the amorphous film on the substrate, whereby crystallization seeds are generated at the point of beam irradiation and function as a starting point for the crystalline or monocrystalline front on the metallic surface. Via controlled beam guidance, as by a computer, over the amorphous metal coated substrate surface, the crystallization front is extended uniformly in a desired path along the irradiated surface. The process is useful in producing metallizations for integrated semiconductor circuits, manufacture of contact electrodes for silicon solar cells, etc.
    • 在由选自陶瓷,玻璃和硅的材料组成的基板上制造粗晶体的晶体或单晶金属或合金区域,并且设置有非晶或无序金属膜的层,例如钽 通过以聚焦的激光束获得的聚焦的热能和/或光能的光束可控地照射非晶膜的选择区域,同时基本上同时将这种衬底的温度保持在大约在沉积中使用的温度 基板上的非晶膜,从而在光束照射点产生结晶晶种,并且作为金属表面上晶体或单晶前沿的起始点。 通过控制的光束引导,如通过计算机,在无定形金属涂覆的基底表面上,结晶前沿沿着照射的表面在期望的路径中均匀地延伸。 该方法可用于制造用于集成半导体电路的金属化,制造用于硅太阳能电池的接触电极等。