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1. 发明授权

US10504772B2 Field emission devices and methods of making thereof 有权
公开(公告)号：US10504772B2
公开(公告)日：2019-12-10
申请号：US15630597
申请日：2017-06-22
申请人： Infineon Technologies AG
发明人： Alfons Dehe , Damian Sojka , Andre Schmenn , Carsten Ahrens
IPC分类号： H01L21/02 , H01L21/311 , H01L21/283 , B81C1/00 , H01L21/764 , H01L21/762 , H01L21/3105 , H01J1/308 , H01J1/304 , H03K17/54 , H01L23/60 , H01L27/02 , H01L23/00 , H02H9/04
CPC分类号： H01L21/76289 , B81C1/00214 , B81C1/00404 , B81C1/00531 , B81C1/00539 , B81C1/00571 , H01J1/308 , H01J1/3044 , H01L21/0217 , H01L21/02129 , H01L21/02164 , H01L21/02274 , H01L21/02282 , H01L21/283 , H01L21/31058 , H01L21/31105 , H01L21/31127 , H01L21/31144 , H01L21/764 , H01L23/60 , H03K17/545 , B81C1/00119 , B81C1/00484 , B81C2201/016 , B81C2201/0111 , B81C2201/0132 , B81C2201/0133 , B81C2201/0135 , B81C2201/0198 , B81C2201/053 , H01J2201/3048 , H01J2201/30411 , H01L24/32 , H01L24/48 , H01L24/73 , H01L27/0288 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/13091 , H01L2924/181 , H02H9/046 , H01L2224/48091 , H01L2924/00014 , H01L2924/00014 , H01L2224/45099 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00 , H01L2924/13091 , H01L2924/00 , H01L2924/181 , H01L2924/00012
摘要： In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

2. 发明授权

US08704316B2 Etchant-free methods of producing a gap between two layers, and devices produced thereby 有权
标题翻译：产生两层之间的间隙的无蚀刻方法，以及由此产生的装置
公开(公告)号：US08704316B2
公开(公告)日：2014-04-22
申请号：US13481672
申请日：2012-05-25
申请人： Clark Tu-Cuong Nguyen , Li-Wen Hung
发明人： Clark Tu-Cuong Nguyen , Li-Wen Hung
IPC分类号： H01L29/84 , H01H59/00 , G01P15/08 , G01P15/125
CPC分类号： H01H59/0009 , B81B3/0021 , B81B2201/0235 , B81B2203/0109 , B81B2203/0118 , B81C1/00182 , B81C1/00476 , B81C1/00484 , G01P15/0802 , G01P15/125
摘要： Etchant-free methods of producing a gap between two materials are provided. Aspects of the methods include providing a structure comprising a first material and a second material, and subjecting the structure to conditions sufficient to cause a decrease in the volume of at least a portion of at least one of the first material and the second material to produce a gap between the first material and the second material. Also provided are devices produced by the methods (e.g., MEMS and NEMS devices), structures used in the methods and methods of making such structures.
摘要翻译：提供了无腐蚀性的两种材料之间产生间隙的方法。方法的方面包括提供包括第一材料和第二材料的结构，并使结构经受足以引起第一材料和第二材料中的至少一种的至少一部分的体积减小的条件以产生第一材料和第二材料之间的间隙。还提供了通过方法（例如，MEMS和NEMS装置）制造的装置，用于制造这种结构的方法和方法中使用的结构。

3. 发明申请

US20100193781A1 MICROMECHANICAL STRUCTURE AND A METHOD OF FABRICATING A MICROMECHANICAL STRUCTURE 有权
标题翻译：微观结构与微观结构的制作方法
公开(公告)号：US20100193781A1
公开(公告)日：2010-08-05
申请号：US12514304
申请日：2007-11-09
申请人： Sudhiranjan Tripathy , Vicknesh s/o Sahmuganathan
发明人： Sudhiranjan Tripathy , Vicknesh s/o Sahmuganathan
IPC分类号： H01L29/22 , H01L29/20 , H01L29/16 , H01L21/203
CPC分类号： B81C1/00484 , B81C2201/0109 , B81C2201/0132 , B81C2201/017
摘要： A micromechanical structure and a method of fabricating a micromechanical structure are provided. The micromechanical structure comprises a silicon (Si) based substrate; a micromechanical element formed directly on the substrate; and an undercut formed underneath a released portion of the micromechanical element; wherein the undercut is in the form of a recess formed in the Si based substrate.
摘要翻译：提供微机械结构和制造微机械结构的方法。微机械结构包括基于硅（Si）的衬底; 直接形成在基板上的微机械元件; 以及形成在微机械元件的释放部分下方的底切; 其中所述底切为形成在所述Si基衬底中的凹部的形式。

4. 发明申请

US20100075482A1 Bonded Wafer Assembly System and Method 有权
标题翻译：粘合晶片装配系统和方法
公开(公告)号：US20100075482A1
公开(公告)日：2010-03-25
申请号：US12238038
申请日：2008-09-25
申请人： Daryl Ross Koehl , Braden Peter D'Andrea
发明人： Daryl Ross Koehl , Braden Peter D'Andrea
IPC分类号： H01L21/302 , B26F3/00 , B26D9/00
CPC分类号： B26F3/002 , B81C1/00484 , B81C1/00888 , B81C99/001 , B81C99/004 , B81C2203/051 , Y10T83/0341 , Y10T225/307 , Y10T225/321 , Y10T225/325 , Y10T225/329
摘要： A system and method for the removal of superfluous material in a bonded wafer assembly. The method includes cutting a plurality of parallel cuts in a top wafer, the plurality of cuts defining a segment of the top wafer attached to another portion of the top wafer via a tab, inserting a wedge-shaped breaker bar into at least one cut of the plurality of cuts, applying force to the breaker bar to fracture the tab, and removing the segment of the top wafer from the bonded wafer assembly, wherein a bottom wafer remains unsingulated after the removing.
摘要翻译：一种用于在接合晶片组件中去除多余材料的系统和方法。该方法包括切割顶部晶片中的多个平行切口，多个切口限定经由突片附接到顶部晶片的另一部分的顶部晶片的段，将楔形断路器条插入到至少一个切口中所述多个切口对所述断路器杆施加力以使所述突片断裂，以及从所述接合的晶片组件移除所述顶部晶片的所述段，其中在所述移除之后，底部晶片保持未起伏。

5. 发明授权

US07422928B2 Process for fabricating a micro-electro-mechanical system with movable components 有权
标题翻译：用于制造具有可移动部件的微机电系统的工艺
公开(公告)号：US07422928B2
公开(公告)日：2008-09-09
申请号：US10572554
申请日：2004-09-12
申请人： Naomasa Oka , Hiroshi Harada , Jun Ogihara , Hiroshi Fukshima , Hiroshi Noge , Yuji Suzuki , Kiyohiko Kawano , Takaaki Yoshihara , Masahiko Suzumura
发明人： Naomasa Oka , Hiroshi Harada , Jun Ogihara , Hiroshi Fukshima , Hiroshi Noge , Yuji Suzuki , Kiyohiko Kawano , Takaaki Yoshihara , Masahiko Suzumura
IPC分类号： H01L21/00 , H02N1/00
CPC分类号： G02B26/0816 , B81B3/0086 , B81B2201/033 , B81B2201/045 , B81C1/00484 , B81C2201/0109 , B81C2201/019 , G02B6/3516 , G02B6/3518 , G02B6/3546 , G02B6/355 , G02B6/357 , G02B6/3584 , H02N1/008
摘要： A process for fabricating a micro-electro-mechanical system (MEMS) composed of fixed components fixedly supported on a lower substrate and movable components movably supported on the lower substrate. The process utilizes an upper substrate separate from the lower substrate. The upper substrate is selectively etched in its top layer to form therein a plurality of posts which project commonly from a bottom layer of the upper substrate. The posts include the fixed components to be fixed to the lower substrate and the movable components which are resiliently supported only to one or more of the fixed components to be movable relative to the fixed components. The lower substrate is formed in its top surface with at least one recess. The upper substrate is then bonded to the top of the lower substrate upside down in such a manner as to place the fixed components directly on the lower substrate and to place the movable components upwardly of the recess. Finally, the bottom layer of the upper substrate is removed to release the movable components from the bottom layer for floating the movable components above the recess and allowing them to move relative to the lower substrate, while keeping the fixed components fixed to the top of the lower substrate.
摘要翻译：一种用于制造由固定地支撑在下基板上的固定部件和可移动地支撑在下基板上的可移动部件的微机电系统（MEMS）的制造方法。该方法利用与下基板分开的上基板。在其顶层中选择性地蚀刻上基板，以在其中形成多个从上基板的底层共同突出的柱。支柱包括要固定到下基板的固定部件和仅弹性地支撑到一个或多个固定部件以相对于固定部件可移动的可动部件。下基板在其顶表面上形成有至少一个凹部。然后将上基板以这样的方式上下连接到下基板的顶部，以将固定部件直接放置在下基板上并将可移动部件放置在凹部的上方。最后，去除上基板的底层以从底层释放可移动部件，用于使可移动部件浮动在凹部上方并允许它们相对于下基板移动，同时保持固定部件固定在下基板。

6. 发明授权

US07419917B2 Ion implanted microscale and nanoscale device method 有权
标题翻译：离子注入微米级和纳米级器件方法
公开(公告)号：US07419917B2
公开(公告)日：2008-09-02
申请号：US11504466
申请日：2006-08-15
申请人： Margaret H. Abraham
发明人： Margaret H. Abraham
IPC分类号： H01L21/31
CPC分类号： H01L21/31116 , B81C1/00484 , B81C2201/0132 , B81C2201/0143 , H01L21/26533
摘要： A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.
摘要翻译：一种方法用于生产各种材料中的纳米级和微量元件，例如二氧化硅图案化的掩膜。该方法对于制造小规模机械，光学或电气装置而言是便宜且可靠的，并且依赖于将离子注入衬底并随后退火以形成化学计量膜，其中器件几何形状由注入能量和剂量限定，因此不受通常工艺参数的限制。

7. 发明授权

US07399652B2 Method for manufacturing a micro-electro-mechanical device, in particular an optical microswitch, and micro-electro-mechanical device thus obtained 有权
标题翻译：微机电装置，特别是光学微动开关的制造方法以及如此获得的微电子机械装置
公开(公告)号：US07399652B2
公开(公告)日：2008-07-15
申请号：US10821263
申请日：2004-04-08
申请人： Simone Sassolini , Mauro Marchi , Marco Del Sarto , Lorenzo Baldo
发明人： Simone Sassolini , Mauro Marchi , Marco Del Sarto , Lorenzo Baldo
IPC分类号： H01L21/58
CPC分类号： H01L21/76898 , B81B2201/033 , B81B2201/045 , B81C1/00484 , B81C1/00896 , B81C2201/019 , G02B6/357 , G02B6/3584
摘要： A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top of the first layer, forming first supporting parts and first operative parts of the device in the second layer, forming temporary anchors in the first layer, and bonding the first wafer to a second wafer, with the second layer facing the second wafer. After bonding the first wafer and the second wafer together, second supporting parts and second operative parts of said device are formed in the first layer. The temporary anchors are removed from the first layer to free the operative parts formed therein.
摘要翻译：一种具有支撑部件和操作部件的微电子机械装置的制造方法，包括提供具有第一半导体材料层的第一半导体晶片和配置在第一层顶部的第二半导体材料层，形成在第二层中的装置的第一支撑部分和第一操作部分，在第一层中形成临时锚固件，以及将第一晶片结合到第二晶片，第二层面向第二晶片。在将第一晶片和第二晶片接合在一起之后，所述器件的第二支撑部件和第二操作部分形成在第一层中。将临时锚固件从第一层移除以释放其中形成的操作部件。

8. 发明申请

US20040262257A1 Method for fabricating an isolated microelectromechanical system (MEMS) device using an internal void 有权
标题翻译：使用内部空隙制造隔离的微机电系统（MEMS）装置的方法
公开(公告)号：US20040262257A1
公开(公告)日：2004-12-30
申请号：US10862593
申请日：2004-06-07
发明人： Richard D. Harris , Robert J. Kretschmann , Michael J. Knieser , Mark A. Lucak
IPC分类号： H01B013/00
CPC分类号： B81C1/00484 , B81B2201/0235 , B81B2203/0315 , B81C1/00626 , B81C2201/019 , B81C2203/0109 , H01G5/40
摘要： A method for fabricating an electrically isolated MEMS device having an outer stationary MEMS element and an inner movable MEMS element is provided that does not use a sacrificial layer. Rather, a pair of spacers are defined on the outer portions of the upper surface of a conductive wafer, and an insulating material is deposited thereon. The spacers are attached to a substrate to define an internal void therein. The wafer is then patterned to form the outer MEMS element as well as a conductive member for the inner MEMS element, separated from the outer MEMS element by a gap. A portion of the insulating layer that is disposed in the gap is then removed, thereby releasing the inner MEMS element from the stationary MEMS element.
摘要翻译：提供了一种用于制造具有外部固定MEMS元件和内部可移动MEMS元件的电隔离MEMS器件的方法，其不使用牺牲层。相反，在导电晶片的上表面的外部部分限定一对间隔物，并且在其上沉积绝缘材料。间隔件附接到基底以在其中限定内部空隙。然后将晶片图案化以形成外MEMS元件以及用于内部MEMS元件的导电构件，其通过间隙与外部MEMS元件分离。然后去除设置在间隙中的绝缘层的一部分，从而将内部MEMS元件从固定MEMS元件释放。

9. 发明授权

US06344417B1 Method for micro-mechanical structures 失效
标题翻译：微机械结构方法
公开(公告)号：US06344417B1
公开(公告)日：2002-02-05
申请号：US09634444
申请日：2000-08-08
申请人： Alexander Usenko
发明人： Alexander Usenko
IPC分类号： H01L21302
CPC分类号： G01P15/0922 , B81C1/00484 , B81C1/00507 , B81C2201/0192 , G01P15/0802
摘要： A method for fabricating MEMS wherein a structural member is released without using a sacrificial layer. In one embodiment, the method comprises forming a buried hydrogen-rich layer in a semiconductor substrate, defining a release structure in the semiconductor substrate above the buried hydrogen-rich layer, and separating at least a portion of the release structure from the semiconductor substrate by cleaving the semiconductor substrate at the buried hydrogen-rich layer. The method can be used to fabricate hybrid devices wherein a MEMS device and a semiconductor device are formed on the same chip.
摘要翻译：一种用于制造MEMS的方法，其中结构构件在不使用牺牲层的情况下被释放。在一个实施例中，该方法包括在半导体衬底中形成埋藏的富氢层，在掩埋富氢层之上的半导体衬底中限定释放结构，并通过以下步骤将至少一部分释放结构与半导体衬底分离：在埋藏的富氢层处切割半导体衬底。该方法可用于制造其中MEMS器件和半导体器件形成在同一芯片上的混合器件。

10. 发明授权

US06290510B1 Spring structure with self-aligned release material 有权
标题翻译：具有自对准脱模材料的弹簧结构
公开(公告)号：US06290510B1
公开(公告)日：2001-09-18
申请号：US09626936
申请日：2000-07-27
申请人： David Kirtland Fork , Jackson Ho , Rachel King-ha Lau , JengPing Lu
发明人： David Kirtland Fork , Jackson Ho , Rachel King-ha Lau , JengPing Lu
IPC分类号： H01R909
CPC分类号： G01R1/06716 , B81B2203/0118 , B81C1/00484 , B81C2201/0136 , B81C2203/058 , G01R1/06727 , G01R1/07342 , G01R3/00 , H01L23/49811 , H01L2924/0002 , H01R4/48 , H01R12/57 , H05K3/4092 , Y10T29/4913 , Y10T29/49135 , Y10T29/4914 , H01L2924/00
摘要： Efficient methods for lithographically fabricating spring structures onto a substrate containing contact pads or metal vias by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material is self-aligned to the spring metal finger using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad or metal via, and also to further anchor the spring metal finger to the substrate.
摘要翻译：通过使用单个掩模通过形成弹簧金属和释放材料层来将含有接触垫或金属通孔的弹性结构光刻制造到衬底上的有效方法。具体地说，使用光致抗蚀剂掩模或电镀金属图案或使用剥离处理技术，释放材料垫与弹簧金属手指自对准。然后使用释放掩模释放弹簧金属指，同时保持将弹簧金属指的锚固部分固定到基底的释放材料的一部分。当释放材料是导电的（例如钛）时，该释放材料部分直接位于接触垫或金属通孔上方，并且用作在完成的弹簧结构中的弹簧金属指的导管。当释放材料不导电时，形成金属带以将弹簧金属指连接到接触垫或金属通孔，并且还将弹簧金属指状物进一步锚定到基底。

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