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    • 7. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08941152B1
    • 2015-01-27
    • US14105253
    • 2013-12-13
    • Taiwan Semiconductor Manufacturing Company, Ltd.
    • Chun-wen ChengJung-Huei PengShang-Ying TsaiHung-Chia TsaiYi-Chuan Teng
    • H01L29/84B81B7/04B81B7/00B81C1/00
    • B81B7/007B81B7/02B81B7/04B81C1/00214B81C1/0023B81C1/00333H01L2224/11
    • A method of forming a semiconductor device comprises forming a base wafer comprising a first chip package portion, a second chip package portion, and a third chip package portion. The method also comprises forming a capping wafer comprising a plurality of isolation trenches, each of the plurality of isolation trenches being configured to substantially align with one of the first chip package portion, the second chip package portion or the third chip package portion. The method further comprises eutectic bonding the capping wafer and the base wafer to form a wafer package. The method additionally comprises dicing the wafer package into a first chip package, a second chip package, and a third chip package. The method also comprises placing the first chip package, the second chip package, and the third chip package onto a substrate.
    • 形成半导体器件的方法包括形成包括第一芯片封装部分,第二芯片封装部分和第三芯片封装部分的基底晶片。 该方法还包括形成包括多个隔离沟槽的封盖晶片,多个隔离沟槽中的每一个被配置为与第一芯片封装部分,第二芯片封装部分或第三芯片封装部分中的一个大致对准。 该方法还包括共晶接合封盖晶片和基底晶片以形成晶片封装。 该方法还包括将晶片封装切割成第一芯片封装,第二芯片封装和第三芯片封装。 该方法还包括将第一芯片封装,第二芯片封装和第三芯片封装放置在基板上。
    • 8. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20110086443A1
    • 2011-04-14
    • US12999478
    • 2009-06-05
    • Takashi KobayashiShuntaro MachidaKunio Hashiba
    • Takashi KobayashiShuntaro MachidaKunio Hashiba
    • H01L21/82H01L21/66
    • H04R31/00B81B2201/0257B81B2207/053B81C1/00214
    • A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2. Next, the plurality of first chips 1 judged as the superior product are adjacently arranged on the front surface of the second chip 2 judged as the superior product in plane in a Y direction so that lower electrodes 5 of the adjacent first chips 1 are electrically connected with each other via a through electrode 6, a bump 8, and a wiring layer 7.
    • 半导体器件(电容式微加工超声换能器)的制造产量增加。 制造在第一半导体晶片的前表面上形成多个具有发送和接收超声波功能的多个单元的多个第一芯片1,并且将第一芯片1判断为上/下产品 然后,第一半导体晶片被配置成多个第一芯片1.接着,制造在第二半导体晶片的前表面上形成有布线层的多个第二芯片2, 将芯片2判断为优劣产品,然后将第二半导体晶片投入多个第二芯片2.接下来,判断为优质产品的多个第一芯片1相邻布置在 第二芯片2在Y方向上被认为是平面上的优异产品,使得相邻的第一芯片1的下电极5经由通电极6,凸块8和 布线层7。