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1. 发明授权

US09869858B2 Electrical tuning of resonant scanning 有权
公开(公告)号：US09869858B2
公开(公告)日：2018-01-16
申请号：US14955060
申请日：2015-12-01
申请人： APPLE INC.
发明人： Yuval Gerson , Alexander Shpunt
IPC分类号： G01S17/42 , G02B26/10 , B81B3/00 , B81C1/00 , G01S7/481 , G01S17/89 , G01S7/497 , G02B26/08 , G01S17/10
CPC分类号： G02B26/101 , B81B3/00 , B81B3/007 , B81B2201/033 , B81B2201/034 , B81B2201/047 , B81B2203/0136 , B81B2203/058 , B81B2207/015 , B81C1/00515 , B81C2201/0111 , G01S7/4817 , G01S7/497 , G01S17/10 , G01S17/42 , G01S17/89 , G02B26/0833
摘要： A scanning device includes a frame, having a central opening, and an array including a plurality of parallel mirrors contained within the central opening of the frame. Hinges respectively connect the mirrors to the frame and define respective, mutually-parallel axes of rotation of the mirrors relative to the frame. A main drive applies a driving force to the array so as to drive an oscillation of the mirrors about the hinges at a resonant frequency of the array. A sensor is configured to detect a discrepancy in a synchronization of the oscillation among the mirrors in the array, and an adjustment circuit applies a corrective signal to at least one of the mirrors in order to alleviate the detected discrepancy.

2. 发明授权

US08372677B2 Three-axis accelerometers and fabrication methods 有权
标题翻译：三轴加速度计和制造方法
公开(公告)号：US08372677B2
公开(公告)日：2013-02-12
申请号：US13466595
申请日：2012-05-08
申请人： Mehran Mehregany
发明人： Mehran Mehregany
IPC分类号： H01L21/00 , G01P15/13
CPC分类号： G01P15/18 , B81B2201/0235 , B81C1/00182 , B81C2201/0111 , G01P15/0802 , G01P15/125 , G01P15/131 , G01P2015/084 , Y10T29/49156
摘要： MEMS accelerometers have a substrate, and a proof mass portion thereof which is separated from the substrate surrounding it by a gap. An electrically-conductive anchor is coupled to the proof mass, and a plurality of electrically-conductive suspension anus that are separated from the proof mass extend from the anchor and are coupled to the substrate surrounding the proof mass. A plurality of sense and actuation electrodes are separated from the proof mass by gaps and are coupled to processing electronics. The fabrication methods use deep reactive ion etch bulk micromachining and surface micromachining to form the proof mass, suspension arms and electrodes. The anchor, suspension arms and electrodes are made in the same process steps from the same electrically conductive material, which is different from the substrate material.
摘要翻译： MEMS加速度计具有基板和其与其周围的基板间隔开的检验质量部分。导电锚固体耦合到检测质量块，并且与防护物质分离的多个导电悬浮肛门从锚固体延伸并且耦合到围绕证明物质的基底。多个感测和致动电极通过间隙与证明块分离，并且耦合到处理电子器件。制造方法使用深反应离子蚀刻体微加工和表面微加工形成证明质量块，悬臂和电极。锚固器，悬架臂和电极由与基板材料不同的相同导电材料以相同的工艺步骤制成。

3. 发明授权

US07795061B2 Method of creating MEMS device cavities by a non-etching process 有权
标题翻译：通过非蚀刻工艺制造MEMS器件腔的方法
公开(公告)号：US07795061B2
公开(公告)日：2010-09-14
申请号：US11321134
申请日：2005-12-29
申请人： Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
发明人： Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
IPC分类号： H01L21/00
CPC分类号： B81C1/00047 , B81B2201/047 , B81C2201/0108 , B81C2201/0111 , G02B26/001
摘要： MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
摘要翻译：可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电导电层。另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电导电层和第二导电层。

4. 发明申请

US20170044010A1 SENSOR ELEMENT, METHOD FOR MANUFACTURING SENSOR ELEMENT, DETECTION DEVICE, AND METHOD FOR MANUFACTURING DETECTION DEVICE 审中-公开
标题翻译：传感器元件，制造传感器元件的方法，检测装置和制造检测装置的方法
公开(公告)号：US20170044010A1
公开(公告)日：2017-02-16
申请号：US15118686
申请日：2015-03-31
申请人： Mitsubishi Electric Corporation
发明人： Tomoya HIRATA , Taiki NAKANISHI , Hiromoto INOUE , Yoshitatsu KAWAMA
IPC分类号： B81C1/00 , G01F1/692 , B81B3/00
CPC分类号： B81C1/00674 , B81B3/0075 , B81B2201/0264 , B81B2203/0315 , B81B2207/99 , B81C1/00666 , B81C2201/0102 , B81C2201/0111 , B81C2201/0143 , B81C2201/0161 , B81C2201/053 , G01F1/6845 , G01F1/692
摘要： There is provided a sensor element including: a semiconductor base member having a first main surface and a second main surface located opposite to the first main surface, and having a cavity structure formed on the second main surface side; and a detection element formed on the first main surface side in a region where the cavity structure is formed, the second main surface of the semiconductor base member including a convexly and concavely shaped portion, and a tip of a convex portion of the convexly and concavely shaped portion having a curved shape.
摘要翻译：提供了一种传感器元件，包括：半导体基底构件，具有第一主表面和与第一主表面相对的第二主表面，并且具有形成在第二主表面侧上的腔结构; 以及检测元件，其形成在形成有所述空腔结构的区域中的所述第一主面侧，所述半导体基座的所述第二主面包括凸形凹形部，所述凸部和凸部的凸部的前端形状部分具有弯曲形状。

5. 发明申请

US20120313235A1 Semiconductor Devices With Moving Members and Methods for Making the Same 有权
标题翻译：具有移动成员的半导体器件及其制造方法
公开(公告)号：US20120313235A1
公开(公告)日：2012-12-13
申请号：US13157994
申请日：2011-06-10
申请人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
IPC分类号： H01L23/522 , H01L21/50
CPC分类号： B81B3/0005 , B81B3/001 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00579 , B81C2201/0111 , B81C2201/014 , B81C2201/0176 , B81C2203/0118 , B81C2203/019
摘要： The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween.
摘要翻译：本公开提供了微机电系统（MEMS）结构的实施例，所述MEMS结构包括MEMS基板; 设置在所述MEMS衬底上的半导体材料的第一和第二导电插塞，其中所述第一导电插头被配置用于电互连，所述第二导电插头被配置为抗静电凸块; 配置在所述MEMS基板上并与所述第一导电插塞电耦合的MEMS器件; 以及盖子衬底，其结合到MEMS衬底上，使得MEMS器件封装在其间。

6. 发明授权

US07892876B2 Three-axis accelerometers and fabrication methods 有权
标题翻译：三轴加速度计和制造方法
公开(公告)号：US07892876B2
公开(公告)日：2011-02-22
申请号：US12503382
申请日：2009-07-15
申请人： Mehran Mehregany
发明人： Mehran Mehregany
IPC分类号： H01L21/00 , H01L21/56
CPC分类号： G01P15/18 , B81B2201/0235 , B81C1/00182 , B81C2201/0111 , G01P15/0802 , G01P15/125 , G01P15/131 , G01P2015/084 , Y10T29/49156
摘要： Disclosed are MEMS accelerometers and methods for fabricating same. An exemplary accelerometer comprises a substrate, and a proof mass that is a portion of the substrate and which is separated from the substrate surrounding it by a gap. An electrically-conductive anchor is coupled to the proof mass, and a plurality of electrically-conductive suspension anus that are separated from the proof mass extend from the anchor and are coupled to the substrate surrounding the proof mass. A plurality of sense and actuation electrodes are separated from the proof mass by gaps and are coupled to processing electronics. Capacitive sensing is used to derive electrical signals caused by forces exerted on the proof mass, and the electrical signals are processed by the processing electronics to produce x-, y- and z-direction acceleration data. Electrostatic actuation is used to induce movements of the mass for force balance operation, or self-test and self-calibration. The fabrication methods use deep reactive ion etch bulk micromachining and surface micromachining to form the proof mass, suspension arms and electrodes. The anchor, suspension arms and electrodes are made in the same process steps from the same electrically conductive material, which is different from the substrate material.
摘要翻译：公开了MEMS加速度计及其制造方法。示例性的加速度计包括基板和作为基板的一部分的检测质量块，并且其与通过间隙围绕其的基板分离。导电锚固体耦合到检测质量块，并且与防护物质分离的多个导电悬浮肛门从锚固体延伸并且耦合到围绕证明物质的基底。多个感测和致动电极通过间隙与证明块分离，并且耦合到处理电子器件。电容感测用于导出由施加在检验质量上的力引起的电信号，并且电信号由处理电子器件处理以产生x，y和z方向的加速度数据。静电驱动用于引起质量的运动，用于力平衡运行，或自检和自校准。制造方法使用深反应离子蚀刻体微加工和表面微加工形成证明质量块，悬臂和电极。锚固器，悬架臂和电极由与基板材料不同的相同导电材料以相同的工艺步骤制成。

7. 发明授权

US09834437B2 Method for manufacturing MEMS torsional electrostatic actuator 有权
公开(公告)号：US09834437B2
公开(公告)日：2017-12-05
申请号：US15327230
申请日：2015-07-31
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Errong Jing
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81C1/00182 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2203/058 , B81C1/00603 , B81C2201/0109 , B81C2201/0111
摘要： A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.

8. 发明申请

US20170174508A1 METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR 有权
公开(公告)号：US20170174508A1
公开(公告)日：2017-06-22
申请号：US15327230
申请日：2015-07-31
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Errong JING
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81C1/00182 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2203/058 , B81C1/00603 , B81C2201/0109 , B81C2201/0111
摘要： A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.

9. 发明申请

US20170153445A1 Electrical tuning of resonant scanning 有权
公开(公告)号：US20170153445A1
公开(公告)日：2017-06-01
申请号：US14955060
申请日：2015-12-01
申请人： APPLE INC.
发明人： Yuval Gerson , Alexander Shpunt
IPC分类号： G02B26/10 , B81C1/00 , G02B26/08 , G01S17/89 , G01S7/497 , B81B3/00 , G01S7/481
CPC分类号： G02B26/101 , B81B3/00 , B81B3/007 , B81B2201/033 , B81B2201/034 , B81B2201/047 , B81B2203/0136 , B81B2203/058 , B81B2207/015 , B81C1/00515 , B81C2201/0111 , G01S7/4817 , G01S7/497 , G01S17/10 , G01S17/42 , G01S17/89 , G02B26/0833
摘要： A scanning device includes a frame, having a central opening, and an array including a plurality of parallel mirrors contained within the central opening of the frame. Hinges respectively connect the mirrors to the frame and define respective, mutually-parallel axes of rotation of the mirrors relative to the frame. A main drive applies a driving force to the array so as to drive an oscillation of the mirrors about the hinges at a resonant frequency of the array. A sensor is configured to detect a discrepancy in a synchronization of the oscillation among the mirrors in the array, and an adjustment circuit applies a corrective signal to at least one of the mirrors in order to alleviate the detected discrepancy.

10. 发明申请

US20100271688A1 METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS 失效
标题翻译：通过非蚀刻过程创建MEMS器件CAVI的方法
公开(公告)号：US20100271688A1
公开(公告)日：2010-10-28
申请号：US12831898
申请日：2010-07-07
申请人： Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
发明人： Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
IPC分类号： G02F1/19
CPC分类号： B81C1/00047 , B81B2201/047 , B81C2201/0108 , B81C2201/0111 , G02B26/001
摘要： MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
摘要翻译：可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电导电层。另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电导电层和第二导电层。

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