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1. 发明授权

US08946864B2 Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same 有权
标题翻译：使用顺序离子注入制备包含金属的膜的系统和方法，以及使用其形成的膜
公开(公告)号：US08946864B2
公开(公告)日：2015-02-03
申请号：US13049762
申请日：2011-03-16
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： H01L29/02 , H01L21/02 , H01L29/207 , H01L23/58 , H01L21/265 , C23C14/10 , C23C14/14 , C23C14/48 , C23C14/54 , C23C14/58 , H01L21/268 , B81C1/00
CPC分类号： H01L21/26533 , B81C1/00507 , C23C14/10 , C23C14/14 , C23C14/48 , C23C14/548 , C23C14/5806 , H01L21/26506 , H01L21/268
摘要： Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure. The film comprises a metal having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include metal ions that coalesce into a substantially continuous, electrically conductive metal layer, or that undergo covalent bonding, whereas in the absence of the embedded structure the metal ions instead may be free to diffuse through the substrate. The embedded structure may control the diffusion of the metal through the substrate and/or the reaction of the metal within the substrate.
摘要翻译：本文提供了使用顺序离子注入制备包含金属的膜的系统和方法，以及使用其形成的膜。使用离子注入制备的结构可以包括基底; 具有预选特征的嵌入式结构; 以及在嵌入结构内或附近的胶片。该膜包括由嵌入结构的存在引起的扰动布置的金属。干扰的布置可以包括聚结成基本上连续的导电金属层或经历共价键合的金属离子，而在没有嵌入结构的情况下，金属离子可以自由地扩散通过基底。嵌入式结构可以控制金属通过衬底的扩散和/或金属在衬底内的反应。

2. 发明授权

US08368155B2 Systems and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same 有权
标题翻译：使用激光辅助化学蚀刻制备独立膜的系统和方法，以及使用其形成的独立膜
公开(公告)号：US08368155B2
公开(公告)日：2013-02-05
申请号：US12869597
申请日：2010-08-26
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： H01L23/20
CPC分类号： H01L21/30604 , B81C1/00047 , B81C1/00547 , B81C2201/0143 , B82Y30/00
摘要： Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.
摘要翻译：提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

3. 发明授权

US07419917B2 Ion implanted microscale and nanoscale device method 有权
标题翻译：离子注入微米级和纳米级器件方法
公开(公告)号：US07419917B2
公开(公告)日：2008-09-02
申请号：US11504466
申请日：2006-08-15
申请人： Margaret H. Abraham
发明人： Margaret H. Abraham
IPC分类号： H01L21/31
CPC分类号： H01L21/31116 , B81C1/00484 , B81C2201/0132 , B81C2201/0143 , H01L21/26533
摘要： A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the implantation of ions into a substrate and subsequent annealing to form a stoichiometric film with the device geometry is defined by the implant energy and dose and so is not limited by the usual process parameters.
摘要翻译：一种方法用于生产各种材料中的纳米级和微量元件，例如二氧化硅图案化的掩膜。该方法对于制造小规模机械，光学或电气装置而言是便宜且可靠的，并且依赖于将离子注入衬底并随后退火以形成化学计量膜，其中器件几何形状由注入能量和剂量限定，因此不受通常工艺参数的限制。

4. 发明授权

US08625064B2 Systems and methods for preparing films using sequential ion implantation, and films formed using same 有权
标题翻译：使用顺序离子注入制备膜的系统和方法，以及使用其形成的膜
公开(公告)号：US08625064B2
公开(公告)日：2014-01-07
申请号：US13567998
申请日：2012-08-06
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： G02F1/1333
CPC分类号： H01L21/265 , C23C14/0635 , C23C14/10 , C23C14/48 , G02B6/1347 , Y10T428/30 , Y10T428/31504
摘要： Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.
摘要翻译：本文提供了使用顺序离子注入制备膜的系统和方法以及使用其形成的膜。使用离子注入制备的结构可以包括基底; 具有预选特征的嵌入式结构; 以及在嵌入结构内或附近的膜，并且包括由嵌入结构的存在引起的扰动布置的离子。扰动的布置可以包括彼此共价键合的离子，嵌入结构或衬底，而离子可以在不存在嵌入结构的情况下自由地扩散通过衬底。嵌入结构可以抑制或阻止离子通过衬底扩散，使得离子彼此共价键合到嵌入结构或衬底上。该膜可以包括例如具有预选相的类金刚石碳，石墨烯或SiC。

5. 发明申请

US20130043486A1 SYSTEM AND METHODS FOR PREPARING FREESTANDING FILMS USING LASER-ASSISTED CHEMICAL ETCH, AND FREESTANDING FILMS FORMED USING SAME 有权
标题翻译：使用激光辅助化学蚀刻制备自动膜的系统和方法以及使用其形成的自动膜
公开(公告)号：US20130043486A1
公开(公告)日：2013-02-21
申请号：US13655198
申请日：2012-10-18
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： H01L21/302 , H01L29/20 , H01L29/16 , H01L29/02
CPC分类号： H01L21/30604 , B81C1/00047 , B81C1/00547 , B81C2201/0143 , B82Y30/00
摘要： Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.
摘要翻译：提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

6. 发明申请

US20120248460A1 SYSTEMS AND METHODS FOR DEPOSITING MATERIALS ON EITHER SIDE OF A FREESTANDING FILM USING LASER-ASSISTED CHEMICAL VAPOR DEPOSITION (LA-CVD), AND STRUCTURES FORMED USING SAME 有权
标题翻译：使用激光辅助化学气相沉积（LA-CVD）在自由薄膜两侧沉积材料的系统和方法，以及使用其形成的结构
公开(公告)号：US20120248460A1
公开(公告)日：2012-10-04
申请号：US13196619
申请日：2011-08-02
申请人： Margaret H. ABRAHAM , David P. Taylor
发明人： Margaret H. ABRAHAM , David P. Taylor
IPC分类号： H01L29/161 , H01L21/311
CPC分类号： H01L21/3065 , B81B3/0021 , B81B2203/0109 , B81C1/00373 , C23C16/01 , C23C16/18 , C23C16/481 , C23C16/483
摘要： Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to light and/or heat. The freestanding film is then exposed to a laser beam in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.
摘要翻译：本发明的实施例提供了使用激光辅助化学气相沉积（LA-CVD）在独立膜的任一侧上沉积材料的系统和方法，以及使用其形成的结构。悬浮在限定在基底中的空腔上的独立膜暴露于当暴露于光和/或热时反应形成固体材料的流体CVD前体。然后在前体的存在下将独立的膜暴露于激光束。 CVD前体优先沉积在独立膜的表面上。

7. 发明申请

US20120235281A1 SYSTEMS AND METHODS FOR PREPARING FILMS COMPRISING METAL USING SEQUENTIAL ION IMPLANTATION, AND FILMS FORMED USING SAME 有权
标题翻译：用于制备包含使用顺序离子注入的金属的膜的系统和方法以及使用其形成的膜
公开(公告)号：US20120235281A1
公开(公告)日：2012-09-20
申请号：US13049762
申请日：2011-03-16
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： H01L29/02 , H01J27/02 , H01L21/265
CPC分类号： H01L21/26533 , B81C1/00507 , C23C14/10 , C23C14/14 , C23C14/48 , C23C14/548 , C23C14/5806 , H01L21/26506 , H01L21/268
摘要： Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure. The film comprises a metal having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include metal ions that coalesce into a substantially continuous, electrically conductive metal layer, or that undergo covalent bonding, whereas in the absence of the embedded structure the metal ions instead may be free to diffuse through the substrate. The embedded structure may control the diffusion of the metal through the substrate and/or the reaction of the metal within the substrate.
摘要翻译：本文提供了使用顺序离子注入制备包含金属的膜的系统和方法，以及使用其形成的膜。使用离子注入制备的结构可以包括基底; 具有预选特征的嵌入式结构; 以及在嵌入结构内或附近的胶片。该膜包括由嵌入结构的存在引起的扰动布置的金属。干扰的布置可以包括聚结成基本上连续的导电金属层或经历共价键合的金属离子，而在没有嵌入结构的情况下，金属离子可以自由地扩散通过基底。嵌入式结构可以控制金属通过衬底的扩散和/或金属在衬底内的反应。

8. 发明申请

US20120049200A1 SYSTEMS AND METHODS FOR PREPARING FREESTANDING FILMS USING LASER-ASSISTED CHEMICAL ETCH, AND FREESTANDING FILMS FORMED USING SAME 有权
标题翻译：使用激光辅助化学蚀刻制备自动膜的系统和方法以及使用其形成的自动膜
公开(公告)号：US20120049200A1
公开(公告)日：2012-03-01
申请号：US12869597
申请日：2010-08-26
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： H01L29/20 , H01L23/31 , H01L21/306
CPC分类号： H01L21/30604 , B81C1/00047 , B81C1/00547 , B81C2201/0143 , B82Y30/00
摘要： Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.
摘要翻译：提供了使用激光辅助化学蚀刻（LACE）制备独立膜的系统和方法，以及使用其形成的独立膜。根据一个方面，衬底具有限定各向同性定义的空腔的表面和部分; 并且基本上连续的膜设置在基底表面并跨越各向同性地限定的腔。根据另一方面，一种衬底具有限定各向同性定义的空腔的表面和一部分; 并且膜被设置在基板表面并跨越各向同性地限定的空腔，所述膜包括预定相的氧化铪（HfO 2），类金刚石碳，石墨烯和碳化硅（SiC）中的至少一种。根据另一方面，一种基板具有限定各向同性定义的空腔的表面和一部分; 并且多层膜设置在基板表面并跨越各向同性定义的空腔。

9. 发明授权

US09583354B2 Systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same 有权
标题翻译：使用激光辅助化学气相沉积（LA-CVD）在独立膜的两侧沉积材料的系统和方法以及使用其形成的结构
公开(公告)号：US09583354B2
公开(公告)日：2017-02-28
申请号：US13196619
申请日：2011-08-02
申请人： Margaret H. Abraham , David P. Taylor
发明人： Margaret H. Abraham , David P. Taylor
IPC分类号： H01L21/20 , H01L21/3065 , C23C16/01 , C23C16/18 , C23C16/48 , B81B3/00 , B81C1/00
CPC分类号： H01L21/3065 , B81B3/0021 , B81B2203/0109 , B81C1/00373 , C23C16/01 , C23C16/18 , C23C16/481 , C23C16/483
摘要： Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using laser-assisted chemical vapor deposition (LA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to light and/or heat. The freestanding film is then exposed to a laser beam in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.
摘要翻译：本发明的实施例提供了使用激光辅助化学气相沉积（LA-CVD）在独立膜的任一侧上沉积材料的系统和方法，以及使用其形成的结构。悬浮在限定在基底中的空腔上的独立膜暴露于当暴露于光和/或热时反应形成固体材料的流体CVD前体。然后在前体的存在下将独立的膜暴露于激光束。 CVD前体优先沉积在独立膜的表面上。

10. 发明授权

US07419915B2 Laser assisted chemical etching method for release microscale and nanoscale devices 有权
标题翻译：激光辅助化学蚀刻方法用于释放微米级和纳米级器件
公开(公告)号：US07419915B2
公开(公告)日：2008-09-02
申请号：US11061485
申请日：2005-02-17
申请人： Margaret H. Abraham , Henry Helvajian , Siegfried W. Janson
发明人： Margaret H. Abraham , Henry Helvajian , Siegfried W. Janson
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , B81C1/00484 , B81C2201/0132 , B81C2201/0143 , H01L21/26533
摘要： A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and subsequently released from bulk silicon, as a direct write method of release of patterned structures that enables removal of only that material needed to allow the device to perform to be precisely released, after which, the bulk material can be further processed for additional electrical or packaging functions.
摘要翻译：使用蚀刻剂和激光器进行局部精确加热的方法使得可以通过改进的工艺控制精确地蚀刻和释放MEMS器件，同时扩大用于制造MEMS的材料的数量，包括埋入并随后从体硅释放的二氧化硅图案化膜，作为图案化结构的释放的直接写入方法，其能够仅去除允许器件执行精确释放所需的材料，之后可以进一步处理散装材料以用于额外的电气或封装功能。

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