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1. 发明授权

US5004956A Thin film electroluminescent edge emitter structure on a silcon substrate 失效
标题翻译：硅衬底上的薄膜电致发光边缘发射极结构
公开(公告)号：US5004956A
公开(公告)日：1991-04-02
申请号：US273296
申请日：1988-11-18
申请人： Zoltan K. Kun , Michael W. Cresswell , Richard H. Hopkins
发明人： Zoltan K. Kun , Michael W. Cresswell , Richard H. Hopkins
IPC分类号： B41J2/447 , H05B33/06 , H05B33/10 , H05B33/12 , H05B33/22 , H05B33/26
CPC分类号： B41J2/45 , H05B33/06 , H05B33/10 , H05B33/12 , H05B33/22 , H05B33/26 , Y10S428/917
摘要： A thin film electroluminescent edge emitter assembly includes a substrate layer having a configuration to define at least one lateral edge surface and at least one integrated circuit formed therein. The integrated circuit has an input for receiving logic signals, and has an excitation voltage input and a plurality of output leads. The output leads form control electrodes each having an end portion terminating at the substrate lateral edge surface. The integrated circuit is operable to provide an excitation voltage to selected control electrodes in response to preselected logic signals provided to the integrated circuit at the logic signal input. A laminar arrangement formed from a first dielectric layer, a second dielectric layer, a phosphor layer interposed between the first and second dielectric layers and a common electrode layer is disposed on the end portions of the control electrodes. These various layers define a plurality of pixels each having a light-emitting face at the substrate lateral edge surface. Pixels associated with the selected control electrodes are responsive to the excitation voltage provided to the selected control electrodes to radiate a light signal emitted at the pixel light emitting faces.
摘要翻译：薄膜电致发光边缘发射器组件包括具有限定至少一个侧边缘表面的构造的基底层和形成在其中的至少一个集成电路。集成电路具有用于接收逻辑信号的输入，并且具有激励电压输入和多个输出引线。输出引线形成控制电极，每个控制电极的端部终止于基板侧边缘表面。集成电路可操作以响应于在逻辑信号输入处提供给集成电路的预选逻辑信号，向选定的控制电极提供激励电压。由控制电极的端部设置由第一电介质层，第二电介质层，介于第一和第二电介质层之间的荧光体层和公共电极层形成的层叠布置。这些各种层限定了多个像素，每个像素在衬底侧边缘表面具有发光面。与所选择的控制电极相关联的像素响应于提供给所选择的控制电极的激发电压，以辐射在像素发光面发射的光信号。

2. 发明授权

US5043631A Thin film electroluminescent edge emitter structure on a silicon substrate 失效
标题翻译：硅衬底上的薄膜电致发光边缘发射极结构
公开(公告)号：US5043631A
公开(公告)日：1991-08-27
申请号：US235143
申请日：1988-08-23
申请人： Zoltan K. Kun , Michael W. Cresswell , Richard H. Hopkins
发明人： Zoltan K. Kun , Michael W. Cresswell , Richard H. Hopkins
IPC分类号： H05B33/06 , H05B33/10 , H05B33/12 , H05B33/22 , H05B33/26
CPC分类号： H05B33/26 , H05B33/06 , H05B33/10 , H05B33/12 , H05B33/22 , Y10S428/917
摘要： A thin film electroluminescent edge emitter assembly includes a substrate layer having a configuration to define at least one lateral edge surface and at least one integrated circuit formed therein. The integrated circuit has an input for receiving logic signals, and has an excitation voltage input and a plurality of output leads. The output leads form control electrodes each having an end portion terminating at the substrate lateral edge surface. The integrated circuit is operable to provide an excitation voltage to selected control electrodes in response to preselected logic signals provided to the integrated circuit at the logic signal input.A laminar arrangement formed from a first dielectric layer, a second dielectric layer, a phosphor layer interposed between the first and second dielectric layers and a common electrode layer is disposed on the end portions of the control electrodes. These various layers define a plurality of pixels each having a light-emitting face at the substrate lateral edge surface. Pixels associated with the selected control electrodes are responsive to the excitation voltage provided to the selected control electrodes to radiate a light signal emitted at the pixel light emitting faces.
摘要翻译：薄膜电致发光边缘发射器组件包括具有限定至少一个侧边缘表面的构造的基底层和形成在其中的至少一个集成电路。集成电路具有用于接收逻辑信号的输入，并且具有激励电压输入和多个输出引线。输出引线形成控制电极，每个控制电极的端部终止于基板侧边缘表面。集成电路可操作以响应于在逻辑信号输入处提供给集成电路的预选逻辑信号，向选定的控制电极提供激励电压。由控制电极的端部设置由第一电介质层，第二电介质层，介于第一和第二电介质层之间的荧光体层和公共电极层形成的层叠布置。这些各种层限定了多个像素，每个像素在衬底侧边缘表面具有发光面。与所选择的控制电极相关联的像素响应于提供给所选择的控制电极的激发电压，以辐射在像素发光面发射的光信号。

3. 发明授权

US5746827A Method of producing large diameter silicon carbide crystals 失效
标题翻译：生产大直径碳化硅晶体的方法
公开(公告)号：US5746827A
公开(公告)日：1998-05-05
申请号：US579277
申请日：1995-12-27
申请人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
发明人： Donovan L. Barrett , Richard N. Thomas , Raymond G. Seidensticker, deceased , Richard H. Hopkins
IPC分类号： C30B23/00
CPC分类号： C30B23/00 , C30B29/36
摘要： A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation placed around the crucible and crucible cavity. A source material of silicon carbide is provided at the first region of the crucible cavity, and a monocrystalline seed is placed at the second region of the crucible cavity. A first growth stage is then conducted in which the first region and the second region of the crucible cavity are heated to at least the sublimation temperature of silicon carbide under substantially isothermal conditions. Then, a second growth stage is conducted in which a temperature gradient is provided between the first and the second region of the crucible cavity, such that the seed in the second crucible region is kept at a temperature lower than a temperature of the first crucible region.
摘要翻译：一种在炉中制造碳化硅晶体的方法。炉具有具有空腔的坩埚，其中空腔具有第一和第二间隔开的区域。炉的坩埚腔能够被加热，优选地通过感应或电阻加热，绝缘体放置在坩埚和坩埚腔周围。碳坩埚的源材料设置在坩埚腔的第一区域，单晶种子放置在坩埚腔的第二区域。然后进行第一生长阶段，其中坩埚腔的第一区域和第二区域在基本上等温条件下被加热至至少碳化硅的升华温度。然后，进行第二生长阶段，其中在坩埚腔的第一和第二区域之间设置温度梯度，使得第二坩埚区域中的种子保持在比第一坩埚区域的温度低的温度。

4. 发明授权

US4072782A Composite erosion resistant optical window 失效
标题翻译：复合耐腐蚀光学窗口
公开(公告)号：US4072782A
公开(公告)日：1978-02-07
申请号：US647025
申请日：1976-01-07
申请人： William E. Kramer , Richard H. Hopkins , Richard A. Hoffman
发明人： William E. Kramer , Richard H. Hopkins , Richard A. Hoffman
IPC分类号： B32B17/10 , C03C27/00 , G02B1/10 , G02B5/00 , B29D11/00 , B32B17/06 , G02B1/00
CPC分类号： C03C27/00 , B32B17/10018 , G02B1/105 , G02B5/00 , Y10S428/911 , Y10S428/913 , Y10S428/918 , Y10T428/31
摘要： An optical window is provided, particularly for multispectral or broadband wavelength (visible and infrared) transmission, which is resistant to damage or erosion by high velocity raindrops or other adverse environmental conditions. The window consists of a substrate of material having the necessary optical properties for the desired spectral range, with a cladding or protective layer of material of high resistance to erosion or other damage bonded to the substrate by a glass bonding material. While any suitable materials meeting the optical and physical requirements may be used, the substrate may be a material such as zinc selenide with a protective layer of zinc sulfide bonded to the substrate by a thin layer of a chalcogenide glass.
摘要翻译：提供了一个光学窗口，特别是用于多光谱或宽带波长（可见光和红外线）传输，其能够抵抗由高速雨滴或其他不利环境条件造成的损坏或侵蚀。该窗口由具有所需光谱范围所需的光学性质的材料的基底组成，具有高的抗侵蚀性材料的包层或保护层或通过玻璃粘合材料粘合到基底上的其它损伤。虽然可以使用满足光学和物理要求的任何合适的材料，但是衬底可以是诸如硫化锌的材料，其具有通过硫属化物玻璃的薄层与衬底结合的硫化锌保护层。

5. 发明授权

US5937317A Method of making a low resistivity silicon carbide boule 失效
标题翻译：制造低电阻率碳化硅原子的方法
公开(公告)号：US5937317A
公开(公告)日：1999-08-10
申请号：US852972
申请日：1997-05-08
申请人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
发明人： Donovan L. Barrett , Richard H. Hopkins , James P. McHugh , Hudson McDonald Hobgood
IPC分类号： C30B23/00 , H01L21/20
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10S438/931
摘要： A nitrogen doped single crystal silicon carbide boule is grown by the physical vapor transport process by introducing nitrogen gas into the growth furnace. During the growth process the pressure within the furnace is maintained at a constant value, P.sub.o, where P.sub.o .ltoreq.100 Torr. This is accomplished by measuring the pressure within the furnace and providing the pressure measurement to a process controller which regulates the nitrogen introduction as nitrogen gas is incorporated into the crystal structure. The partial pressure of the nitrogen may be selected to be at a value between 1 and P.sub.o. If the desired partial pressure is less than P.sub.o, an inert gas is added to make up the difference.
摘要翻译：通过将氮气引入生长炉中，通过物理蒸气传输方法生长氮掺杂的单晶碳化硅原子。在生长过程中，炉内的压力保持在恒定值Po，其中Po = 100Torr。这是通过测量炉内的压力并将压力测量值提供给调节氮气引入的过程控制器来实现的，因为氮气被结合到晶体结构中。氮的分压可以选择在1和Po之间的值。如果所需的分压小于Po，则添加惰性气体来弥补差异。

6. 发明授权

US5077239A Chalcogenide glass, associated method and apparatus 失效
标题翻译：硫族化物玻璃，相关方法和装置
公开(公告)号：US5077239A
公开(公告)日：1991-12-31
申请号：US465285
申请日：1990-01-16
申请人： Narsingh B. Singh , Richard H. Hopkins , Walter E. Gaida , Robert Mazelsky
发明人： Narsingh B. Singh , Richard H. Hopkins , Walter E. Gaida , Robert Mazelsky
IPC分类号： C03C3/32 , G02B1/02 , G02F1/00 , G02F1/355
CPC分类号： G02F1/3551 , C03C3/321 , G02B1/02 , G02F1/0018 , Y10S501/90 , Y10S501/904
摘要： A crystal of a composition of silver, thallium, and sulfur is useful in non-linear optical devices, acousto-optical devices, piezo electric devices and other types of optical and acoustic devices. The chalcogenide glass composition of the invention displays superior transmission beyond 12 .mu.m.
摘要翻译：银，铊和硫的组成的晶体可用于非线性光学器件，声光器件，压电器件和其他类型的光学和声学器件中。本发明的硫族化物玻璃组合物显示超过12μm的优异透射率。

7. 发明授权

US4955699A Precious metal doped crystals for hardening of the crystals 失效
标题翻译：用于硬化晶体的贵金属掺杂晶体
公开(公告)号：US4955699A
公开(公告)日：1990-09-11
申请号：US276093
申请日：1988-11-23
申请人： Narsingh B. Singh , Tom Henningsen , Robert Mazelsky , Richard H. Hopkins , Milton S. Gottlieb
发明人： Narsingh B. Singh , Tom Henningsen , Robert Mazelsky , Richard H. Hopkins , Milton S. Gottlieb
IPC分类号： C30B11/00 , G02F1/00
CPC分类号： G02F1/0018 , C30B11/00 , C30B29/46
摘要： Disclosed is a crystal 1 of thallium arsenic selenide, thallium arsenic sulfide, thallium vanadium sulfide, thallium phosphorous selenide, lead halide, cadmium sulfide, cadmium selenide, cadmium tin arsenide, cadmium germanium arsenide, indium phosphoride, indium arsenide, or mixtures thereof, doped with a precious metal in an amount of about 25 ppm up to the solubility limit of a precious metal in the crystal. The crystal is useful in nonlinear optical devices, acousto-optical devices, piezoelectric devices, and other types of optical and acoustic devices.
摘要翻译：公开了铊砷化钪，硫化铊硫化物，铊硫化钒，硒化锇，硒化镉，硫化镉，硒化镉，砷化镉锡，砷化镉砷，磷化铟，砷化铟或其混合物的晶体1，掺杂其中贵金属的量约为25ppm，高达贵金属在晶体中的溶解度极限。该晶体在非线性光学器件，声光器件，压电器件和其他类型的光学和声学器件中是有用的。

8. 发明授权

US4058429A Infrared temperature control of Czochralski crystal growth 失效
标题翻译： Czochralski晶体生长的红外温度控制
公开(公告)号：US4058429A
公开(公告)日：1977-11-15
申请号：US637550
申请日：1975-12-04
申请人： Charles Duncan , Richard H. Hopkins
发明人： Charles Duncan , Richard H. Hopkins
IPC分类号： C30B15/26 , B01J17/18
CPC分类号： C30B15/26 , Y10T117/1008 , Y10T117/1068
摘要： A method and apparatus for controlling the diameter of single crystals grown by the Czochralski process in which an infrared sensor determines the temperatures of the melt adjacent to the crystal and a control circuit compares an average of these temperatures to a reference temperature to provide an error signal which controls the inductive heating of the melt.
摘要翻译：用于控制通过Czochralski工艺生长的单晶的直径的方法和装置，其中红外传感器确定与晶体相邻的熔体的温度，并且控制电路将这些温度的平均值与参考温度进行比较以提供误差信号其控制熔体的感应加热。

9. 发明申请

US20090220788A1 METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE 审中-公开
标题翻译：用于合成超高纯度碳化硅的方法
公开(公告)号：US20090220788A1
公开(公告)日：2009-09-03
申请号：US12096306
申请日：2006-12-07
申请人： Donovan L. Barrett , Jihong Chen , Richard H. Hopkins , Carl J. Johnson
发明人： Donovan L. Barrett , Jihong Chen , Richard H. Hopkins , Carl J. Johnson
IPC分类号： C01B31/36 , B32B5/16
CPC分类号： C04B35/573 , C01B32/956 , C04B2235/422 , C04B2235/428 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , Y10T428/2982
摘要： Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si+C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si+C mixture. Adsorbed gaseous species and elements are reduced from the Si+C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si+C mixture is caused to react and form polycrystalline SiC.
摘要翻译：吸附的气态物质和碳（C）粉末和石墨坩埚中的元素通过真空和足以引起还原的升高的温度被还原。坩埚内壁的壁和至少一端用上述方式纯化的C粉末排列。用上述方法纯化的C粉末和Si粉末或颗粒形成Si + C混合物。衬里的坩埚中加入Si + C混合物。吸附的气态物质和元素通过真空和升高的温度从Si + C混合物和坩埚中还原，足以引起还原但不超过Si的熔点。此后，通过真空和升高的温度，使Si + C混合物反应并形成多晶SiC。

10. 发明申请

US20080190355A1 Low-Doped Semi-Insulating Sic Crystals and Method 审中-公开
标题翻译：低掺杂半绝缘矽晶体和方法
公开(公告)号：US20080190355A1
公开(公告)日：2008-08-14
申请号：US11629584
申请日：2005-07-06
申请人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
发明人： Jihong Chen , Ilya Zwieback , Avinash K. Gupta , Donovan L. Barrett , Richard H. Hopkins , Edward Semenas , Thomas A. Anderson , Andrew E. Souzis
IPC分类号： C30B33/02 , H01B1/02
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02581 , H01L21/02631
摘要： The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm−3, and preferably to below 1·1016 cm−3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors. The deep level impurity comprises one of selected metals from the periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB and VIIIB. Vanadium is a preferred deep level element. In addition to controlling the resistivity and capacitance, a further advantage of the invention is an increase in electrical uniformity over the entire crystal and reduction in the density of crystal defects.
摘要翻译：本发明涉及用于半导体器件的半绝缘碳化硅的衬底及其制造方法。基板的电阻率高于106欧姆 - 厘米，优选高于108欧姆 - 厘米，最优选高于109欧姆 - 厘米，电容低于5 pF / mm2，最好低于1 pF / mm2。基板的电学特性由少量的加入的深度杂质控制，其浓度足够大以控制电气行为，但足够小以避免结构缺陷。底物具有无意的背景杂质浓度，包括浅供体和受体，故意降低至5.1016cm-3以下，优选低于1.1016cm-3，深层杂质的浓度较高，优选至少高两倍，比浅受体和浅供体的浓度之间的差异。深层杂质包括选自周期性基团IB，IIB，IIIB，IVB，VB，VIB，VIIB和VIIIB的金属之一。钒是首选的深层元素。除了控制电阻率和电容之外，本发明的另一个优点是在整个晶体上的电均匀性的增加和晶体缺陷密度的降低。

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