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    • 8. 发明申请
    • THROUGH-HOLE FORMING METHOD, INKJET HEAD, AND SILICON SUBSTRATE
    • 通孔形成方法,喷头和硅基板
    • US20090073228A1
    • 2009-03-19
    • US12197499
    • 2008-08-25
    • Keiichi SasakiYukihiro Hayakawa
    • Keiichi SasakiYukihiro Hayakawa
    • B41J2/015H01L21/00H01L23/58
    • H01L21/308B41J2/1603B41J2/1629B41J2/1631B41J2/1642B41J2202/13H01L29/06
    • A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.
    • 通孔形成方法包括以下步骤:在硅衬底(101)的第一表面中形成在要形成通孔的区域周围的第一杂质区域(102a),第一杂质区域(102)更高 在所述硅衬底(101)的深度方向上与所述第一杂质区(102a)相邻的位置形成第二杂质区(102b),所述第二杂质区(102b) 杂质浓度高于第一杂质区(102a),在第一表面上形成蚀刻停止层(103),形成在硅衬底(101)的第二表面上具有开口的蚀刻掩模层(104) 并且蚀刻硅衬底(101),直到至少蚀刻停止层(103)经由开口露出。