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    • 8. 发明申请
    • THROUGH-HOLE FORMING METHOD, INKJET HEAD, AND SILICON SUBSTRATE
    • 通孔形成方法,喷头和硅基板
    • US20090073228A1
    • 2009-03-19
    • US12197499
    • 2008-08-25
    • Keiichi SasakiYukihiro Hayakawa
    • Keiichi SasakiYukihiro Hayakawa
    • B41J2/015H01L21/00H01L23/58
    • H01L21/308B41J2/1603B41J2/1629B41J2/1631B41J2/1642B41J2202/13H01L29/06
    • A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.
    • 通孔形成方法包括以下步骤:在硅衬底(101)的第一表面中形成在要形成通孔的区域周围的第一杂质区域(102a),第一杂质区域(102)更高 在所述硅衬底(101)的深度方向上与所述第一杂质区(102a)相邻的位置形成第二杂质区(102b),所述第二杂质区(102b) 杂质浓度高于第一杂质区(102a),在第一表面上形成蚀刻停止层(103),形成在硅衬底(101)的第二表面上具有开口的蚀刻掩模层(104) 并且蚀刻硅衬底(101),直到至少蚀刻停止层(103)经由开口露出。
    • 9. 发明授权
    • Through-hole forming method, inkjet head, and silicon substrate
    • 通孔形成方法,喷墨头和硅衬底
    • US08409452B2
    • 2013-04-02
    • US12197499
    • 2008-08-25
    • Keiichi SasakiYukihiro Hayakawa
    • Keiichi SasakiYukihiro Hayakawa
    • H01B13/00
    • H01L21/308B41J2/1603B41J2/1629B41J2/1631B41J2/1642B41J2202/13H01L29/06
    • A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.
    • 通孔形成方法包括以下步骤:在硅衬底(101)的第一表面中形成在要形成通孔的区域周围的第一杂质区域(102a),第一杂质区域(102)更高 在所述硅衬底(101)的深度方向上与所述第一杂质区(102a)相邻的位置形成第二杂质区(102b),所述第二杂质区(102b) 杂质浓度高于第一杂质区(102a),在第一表面上形成蚀刻停止层(103),形成在硅衬底(101)的第二表面上具有开口的蚀刻掩模层(104) 并且蚀刻硅衬底(101),直到至少蚀刻停止层(103)经由开口露出。
    • 10. 发明授权
    • Circuit substrate and liquid discharging apparatus with a first wiring layer directly connected to the substrate and a second wiring layer connected to the first wiring layer through a metal film
    • 具有直接连接到基板的第一布线层的电路基板和液体排出装置以及通过金属膜连接到第一布线层的第二布线层
    • US08157357B2
    • 2012-04-17
    • US12429517
    • 2009-04-24
    • Keiichi Sasaki
    • Keiichi Sasaki
    • B41J2/05
    • B41J2/14072B41J2202/13
    • The present invention provides a higher density, higher resolution, higher durability and lower cost circuit substrate. In a circuit substrate in which a circuit including: a plurality of heat generating elements in which a pair of electrodes opposing each other to form a predetermined gap is provided on a resistor 16 and a portion where a resistor layer is positioned between the electrodes is taken as a resistor portion; and first and second wiring layers 12 and 15 for energizing the pair of electrodes of each heat generating element; is mounted on a substrate 10, the substrate is formed of Si, the first wiring layer is formed of a metal material containing at least Si, the first wiring layer is electrically connected to the substrate, the second wiring layer is provided on the first wiring layer through a metal film 14 for preventing Si from diffusing and a resistor is provided over the second wiring layer.
    • 本发明提供了更高密度,更高分辨率,更高耐久性和更低成本的电路基板。 在电路基板中,电路包括:多个发热元件,其中一对彼此相对以形成预定间隙的电极被设置在电阻器16上,并且电阻层位于电极之间的部分被取走 作为电阻部分; 以及用于激励每个发热元件的一对电极的第一和第二布线层12和15; 安装在基板10上,基板由Si形成,第一布线层由至少含有Si的金属材料形成,第一布线层与基板电连接,第二布线层设置在第一布线 通过用于防止Si扩散的金属膜14,并且在第二布线层上设置电阻器。