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1. 发明授权

US07309657B2 Circuit board, liquid discharge apparatus, and method of manufacturing the circuit board 有权
标题翻译：电路板，液体排出装置以及制造电路板的方法
公开(公告)号：US07309657B2
公开(公告)日：2007-12-18
申请号：US10929492
申请日：2004-08-31
申请人： Masato Kamiichi , Keiichi Sasaki
发明人： Masato Kamiichi , Keiichi Sasaki
IPC分类号： H01L21/302
CPC分类号： B41J2/1642 , B41J2/1412 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1646 , H05K1/167 , H05K3/06 , H05K2201/0317 , H05K2203/1453 , Y10T428/24917
摘要： Provided is a method for manufacturing a circuit board including an electrode wiring formed above a surface portion of a substrate, and a plurality of electrothermal converting elements which have a heating resistor film for generating thermal energy formed above the electrode wiring. The method includes: forming an electrode wiring layer for forming the electrode wiring, forming the heating resistor film; and collectively etching the electrode wiring layer and the heating resistor film to thereby form the electrode wiring. With the method according to the present invention, the circuit board can be manufactured with a higher density, higher endurance, and lower power consumption recording head to provide high resolution images.
摘要翻译：提供一种制造电路板的方法，该电路板包括形成在基板的表面部分上方的电极布线，以及多个电热转换元件，其具有用于产生形成在电极布线上方的热能的加热电阻膜。该方法包括：形成用于形成电极布线的电极布线层，形成加热电阻膜; 并且共同地蚀刻电极布线层和加热电阻膜，从而形成电极布线。利用根据本发明的方法，可以制造具有更高密度，更高耐久性和更低功耗记录头的电路板，以提供高分辨率图像。

2. 发明授权

US07090339B2 Liquid discharge head and method of manufacturing the same 失效
标题翻译：液体排放头及其制造方法
公开(公告)号：US07090339B2
公开(公告)日：2006-08-15
申请号：US11058164
申请日：2005-02-16
申请人： Keiichi Sasaki
发明人： Keiichi Sasaki
IPC分类号： B41J2/05
CPC分类号： B41J2/1628 , B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , C23F1/02
摘要： A method of manufacturing a liquid discharge head, comprising the steps of forming a film of an inorganic material in the form of a liquid flow path pattern on a substrate having liquid discharge elements formed thereon, forming a liquid flow path member on the film of the inorganic material using one of silicon oxide, silicon carbide, and carbon doped silicon oxide (SiOC), forming liquid discharge openings in corresponding portions above the liquid discharge elements, and eluting the film of the inorganic material so as to form a liquid flow path.
摘要翻译：一种制造液体排出头的方法，包括以下步骤：在其上形成有液体排出元件的基板上形成液态流路图案形式的无机材料的膜，在其上形成液体流路部件使用氧化硅，碳化硅和碳掺杂氧化硅（SiOC）中的一种的无机材料，在液体排出元件上方的相应部分中形成液体排出口，并且洗脱无机材料的膜以形成液体流动路径。

3. 发明授权

US07049223B2 Paste including a mixture of powders, connection plug, burying method, and semiconductor device manufacturing method 失效
公开(公告)号：US07049223B2
公开(公告)日：2006-05-23
申请号：US10646703
申请日：2003-08-25
申请人： Keiichi Sasaki , Manabu Kimura , Yoshimi Hisatsune , Nobuo Hayasaka
发明人： Keiichi Sasaki , Manabu Kimura , Yoshimi Hisatsune , Nobuo Hayasaka
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76898 , H01L21/288 , H01L21/76877 , H01L21/76882 , H01L23/481 , H01L2924/0002 , Y10S438/977 , H01L2924/00
摘要： Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.

4. 发明授权

US06930382B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06930382B2
公开(公告)日：2005-08-16
申请号：US10875190
申请日：2004-06-25
申请人： Kanako Sawada , Keiichi Sasaki
发明人： Kanako Sawada , Keiichi Sasaki
IPC分类号： H01L25/18 , H01L21/768 , H01L23/48 , H01L23/52 , H01L25/065 , H01L25/07 , H01L23/02
CPC分类号： H01L25/50 , H01L21/76898 , H01L23/481 , H01L25/0657 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2225/06513 , H01L2225/06541 , H01L2225/06589 , H01L2924/01078 , H01L2924/10253 , H01L2924/13091 , Y10S438/926 , H01L2924/00
摘要： A semiconductor device includes a first substrate including an element, a first plug penetrating through the first substrate, made of a conductive material, and electrically connected with the element, a second substrate provided above the first substrate, and electrically connected with the element via the first plug, and a second plug penetrating through the first substrate, made of a non-dielectric material, and being not electrically connected with the second substrate.
摘要翻译：一种半导体器件，包括：第一基板，包括元件，贯穿所述第一基板的第一插塞，由导电材料制成并与所述元件电连接;第二基板，设置在所述第一基板上方，并经由所述元件与所述元件电连接第一插头和穿过第一基板的第二插头，由非电介质材料制成，并且不与第二基板电连接。

5. 发明申请

US20050124164A1 Fine particle film forming apparatus and method and semiconductor device and manufacturing method for the same 审中-公开
标题翻译：微粒成膜装置及其制造方法及半导体装置及其制造方法
公开(公告)号：US20050124164A1
公开(公告)日：2005-06-09
申请号：US11033871
申请日：2005-01-13
申请人： Atsuko Sakata , Keiichi Sasaki , Nobuo Hayasaka , Katsuya Okumura , Hirotaka Nishino
发明人： Atsuko Sakata , Keiichi Sasaki , Nobuo Hayasaka , Katsuya Okumura , Hirotaka Nishino
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L21/302 , H01L21/461
CPC分类号： H01L24/03 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/742 , H01L2224/0401 , H01L2224/05022 , H01L2224/0557 , H01L2224/05571 , H01L2224/05624 , H01L2224/11001 , H01L2224/1131 , H01L2224/11334 , H01L2224/1147 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2924/00011 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 μm or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.
摘要翻译：在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。因此，凸块电极结构完成。

6. 发明授权

US06809421B1 Multichip semiconductor device, chip therefor and method of formation thereof 失效
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US06809421B1
公开(公告)日：2004-10-26
申请号：US09377486
申请日：1999-08-20
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L2348
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

7. 发明授权

US06657306B1 Paste including a mixture of powders, connection plug, burying method, and semiconductor device manufacturing method 失效
标题翻译：糊料包括粉末混合物，连接插头，埋入方法和半导体器件制造方法
公开(公告)号：US06657306B1
公开(公告)日：2003-12-02
申请号：US09722467
申请日：2000-11-28
申请人： Keiichi Sasaki , Manabu Kimura , Yoshimi Hisatsune , Nobuo Hayasaka
发明人： Keiichi Sasaki , Manabu Kimura , Yoshimi Hisatsune , Nobuo Hayasaka
IPC分类号： H01L2348
CPC分类号： H01L21/76898 , H01L21/288 , H01L21/76877 , H01L21/76882 , H01L23/481 , H01L2924/0002 , Y10S438/977 , H01L2924/00
摘要： Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.
摘要翻译：在半导体衬底的主表面上形成沟槽，然后在沟槽中埋设糊状物。糊状物含有具有导电物质和树脂的固体，以及用于溶解树脂的溶剂。糊剂的固体成分不小于60体积％，粘度比不大于2。

8. 发明授权

US06542836B1 Waveform signal analyzer 有权
标题翻译：波形信号分析仪
公开(公告)号：US06542836B1
公开(公告)日：2003-04-01
申请号：US09533937
申请日：2000-03-23
申请人： Keiichi Sasaki , Akira Sawada
发明人： Keiichi Sasaki , Akira Sawada
IPC分类号： G01R1300
CPC分类号： G01R23/16
摘要： The waveform signal analyzer of the present invention is equipped with: input means 10 that inputs a waveform signals; period detection means 20 that detects the period of the waveform signals inputted by input means 10; and division means 30 that divides the waveform signals by the period detected by period detection means 20. Wavelet transformation means 40 performs wavelet transformation of each individual division of the waveform signals. Display means 50 consecutively displays in time series the wavelet transformation results of each individual division of the waveform signals.
摘要翻译：本发明的波形信号分析装置具有：输入装置10，输入波形信号;周期检测装置20，检测由输入装置10输入的波形信号的周期; 分割装置30，其将波形信号除以由周期检测装置20检测的周期。小波变换装置40对波形信号的各个分割进行小波变换。显示装置50以时间顺序连续显示波形信号的各个分割的小波变换结果。

9. 发明授权

US06538323B1 Semiconductor device having an electrode structure comprising a conductive fine particle film 失效
标题翻译：具有包含导电性微粒膜的电极结构的半导体装置
公开(公告)号：US06538323B1
公开(公告)日：2003-03-25
申请号：US09449941
申请日：1999-11-29
申请人： Atsuko Sakata , Keiichi Sasaki , Nobuo Hayasaka , Katsuya Okumura , Hirotaka Nishino
发明人： Atsuko Sakata , Keiichi Sasaki , Nobuo Hayasaka , Katsuya Okumura , Hirotaka Nishino
IPC分类号： H01L2348
CPC分类号： H01L24/03 , H01L23/481 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/742 , H01L2224/0401 , H01L2224/05022 , H01L2224/0557 , H01L2224/05571 , H01L2224/05624 , H01L2224/11001 , H01L2224/1131 , H01L2224/11334 , H01L2224/1147 , H01L2224/13022 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2924/00011 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01028 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2224/81805
摘要： After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 &mgr;m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter, the bump electrode is melted by a heat treatment to join the Ni fine particle film to the bump electrode. Thus, a bump electrode structure is finished.
摘要翻译：在焊盘电极上形成阻挡膜之后，在阻挡膜上选择性地沉积直径为2μm以下的Ni粒子，形成Ni微粒膜。然后，通过Ni微粒膜在焊盘电极上设置由焊料球形成的突起电极。此后，通过热处理使凸块电极熔融，将Ni微粒膜与凸点电极接合。因此，凸块电极结构完成。

10. 发明授权

US06235624B1 Paste connection plug, burying method, and semiconductor device manufacturing method 失效
标题翻译：粘贴连接插头，埋入方法和半导体器件制造方法
公开(公告)号：US06235624B1
公开(公告)日：2001-05-22
申请号：US09321534
申请日：1999-05-28
申请人： Keiichi Sasaki , Manabu Kimura , Nobuo Hayasaka
发明人： Keiichi Sasaki , Manabu Kimura , Nobuo Hayasaka
IPC分类号： H01L214763
CPC分类号： H01L21/76898 , H01L21/288 , H01L21/76877 , H01L21/76882 , H01L23/481 , H01L2924/0002 , Y10S438/977 , H01L2924/00
摘要： Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.
摘要翻译：在半导体衬底的主表面上形成沟槽，然后在沟槽中埋设糊状物。糊状物含有具有导电物质和树脂的固体，以及用于溶解树脂的溶剂。糊剂的固体成分不小于60体积％，粘度比不大于2。

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