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1. 发明授权

US07566422B2 Exposure apparatus with tanks storing helium gas and method of manufacturing device using exposure apparatus 失效
标题翻译：带有储存氦气的储罐的曝光装置和使用曝光装置的制造装置的方法
公开(公告)号：US07566422B2
公开(公告)日：2009-07-28
申请号：US11201142
申请日：2005-08-11
申请人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
发明人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
IPC分类号： G05D16/00 , C23C14/00
CPC分类号： G05D16/2013
摘要： A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient as recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.
摘要翻译：一种处理装置，包括：密封真空室，其包含处理部分; 压力控制系统，通过排出密封真空室中的环境气体来保持密封真空室的内部压力恒定在预定水平; 以及环境气体循环系统，其将从密封的真空室排出的环境气体再循环回密封的真空室中; 其中由环境气体再循环系统再循环的环境被吹入密封的真空室中，使得沿着处理部分沿预定方向产生气流。

2. 发明授权

US06750946B2 Processing apparatus for processing sample in predetermined atmosphere 失效
标题翻译：用于在预定气氛中处理样品的处理装置
公开(公告)号：US06750946B2
公开(公告)日：2004-06-15
申请号：US09897930
申请日：2001-07-05
申请人： Yutaka Tanaka , Shigeru Terashima , Shinichi Hara
发明人： Yutaka Tanaka , Shigeru Terashima , Shinichi Hara
IPC分类号： G03B2752
CPC分类号： H01L21/67196 , G03F7/7075 , G03F7/70808 , G03F7/70841 , G03F7/70866 , H01L21/67017 , H01L21/67201 , Y10T29/41
摘要： A substrate processing system has a first processing device which processes a substrate with a first process in a first gas atmosphere within a process chamber and a transfer device that transfers a substrate in a second gas atmosphere within a clean booth, the transfer device transferring a substrate which has been processed with a second process by a second processing device or a substrate which is to be processed by that second processing device. A load-lock chamber has a substrate transfer path between the first processing device and the transfer device and there is a gas supply device which supplies the first gas from the process chamber to the load-lock chamber when the substrate is transferred between the load-lock chamber and a first processing device, and supplies the second gas from the clean booth to the load-lock chamber when the substrate is transferred between the load-lock chamber and the transfer device.
摘要翻译：基板处理系统具有第一处理装置，其处理处理室内的第一气体气氛中的第一处理的基板和在清洁室内将第二气体气氛中的基板转印的转印装置，所述转印装置将基板其通过第二处理装置或将被该第二处理装置处理的基板的第二处理进行处理。负载锁定室具有在第一处理装置和转印装置之间的基板传送路径，并且存在一个气体供应装置，当基板在载荷传递装置之间传送时，将第一气体从处理室供应到装载锁定室，锁定室和第一处理装置，并且当衬底在负载锁定室和转移装置之间传送时，将来自清洁室的第二气体供应到负载锁定室。

3. 发明授权

US06984362B2 Processing apparatus, measuring apparatus, and device manufacturing method 失效
标题翻译：处理装置，测量装置和装置制造方法
公开(公告)号：US06984362B2
公开(公告)日：2006-01-10
申请号：US10619506
申请日：2003-07-16
申请人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
发明人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
IPC分类号： G05B1/00 , G05B23/00
CPC分类号： G05D16/2013
摘要： A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient as recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.
摘要翻译：一种处理装置，包括：密封真空室，其包含处理部分; 压力控制系统，通过排出密封真空室中的环境气体来保持密封真空室的内部压力恒定在预定水平; 以及环境气体循环系统，其将从密封的真空室排出的环境气体再循环回密封的真空室中; 其中由环境气体再循环系统再循环的环境被吹入密封的真空室中，使得沿着处理部分沿预定方向产生气流。

4. 发明申请

US20050271558A1 Processing apparatus, measuring apparatus, and device manufacturing method 失效
标题翻译：处理装置，测量装置和装置制造方法
公开(公告)号：US20050271558A1
公开(公告)日：2005-12-08
申请号：US11201142
申请日：2005-08-11
申请人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
发明人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
IPC分类号： H01L21/027 , G03F7/20 , G05D16/00 , G05D16/20
CPC分类号： G05D16/2013
摘要： A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient as recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.
摘要翻译：一种处理装置，包括：密封真空室，其包含处理部分; 压力控制系统，通过排出密封真空室中的环境气体来保持密封真空室的内部压力恒定在预定水平; 以及环境气体循环系统，其将从密封的真空室排出的环境气体再循环回密封的真空室中; 其中由环境气体再循环系统再循环的环境被吹入密封的真空室中，使得沿着处理部分沿预定方向产生气流。

5. 发明授权

US06616898B2 Processing apparatus with pressure control and gas recirculation system 失效
标题翻译：具有压力控制和气体再循环系统的加工设备
公开(公告)号：US06616898B2
公开(公告)日：2003-09-09
申请号：US09257258
申请日：1999-02-25
申请人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
发明人： Shinichi Hara , Yutaka Tanaka , Shigeru Terashima , Takayuki Hasegawa , Shin Matsui
IPC分类号： G05D1600
CPC分类号： G05D16/2013
摘要： A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient gas recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.
摘要翻译：一种处理装置，包括：密封真空室，其包含处理部分; 压力控制系统，通过排出密封真空室中的环境气体来保持密封真空室的内部压力恒定在预定水平; 以及环境气体循环系统，其将从密封的真空室排出的环境气体再循环回密封的真空室中; 其中由环境气体再循环系统再循环的环境气体被吹送到密封真空室中，使得沿着处理部分沿预定方向产生气流。

6. 发明授权

US5157700A Exposure apparatus for controlling intensity of exposure radiation 失效
标题翻译：用于控制接触辐射强度的曝光装置
公开(公告)号：US5157700A
公开(公告)日：1992-10-20
申请号：US401615
申请日：1989-08-31
申请人： Hiroshi Kurosawa , Mitsuaki Amemiya , Shigeru Terashima , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Kunitaka Ozawa , Makiko Mori , Ryuichi Ebinuma , Shinichi Hara , Nobutoshi Mizusawa , Eigo Kawakami
发明人： Hiroshi Kurosawa , Mitsuaki Amemiya , Shigeru Terashima , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Kunitaka Ozawa , Makiko Mori , Ryuichi Ebinuma , Shinichi Hara , Nobutoshi Mizusawa , Eigo Kawakami
IPC分类号： G03F7/20
CPC分类号： G03F7/70691 , G03F7/70058 , G03F7/70091 , G03F7/702
摘要： An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.

7. 发明授权

US07123343B2 Exposure apparatus and device manufacturing method 有权
标题翻译：曝光装置和装置制造方法
公开(公告)号：US07123343B2
公开(公告)日：2006-10-17
申请号：US11136687
申请日：2005-05-25
申请人： Noriyasu Hasegawa , Shigeru Terashima
发明人： Noriyasu Hasegawa , Shigeru Terashima
IPC分类号： G03B27/52 , G03B27/62
CPC分类号： G03F7/70933 , G03F7/70883 , G03F7/70908
摘要： An exposure apparatus which projects and transfers a pattern formed on a mask to a substrate using exposure light includes a stage, an optical system, and a gas stream forming mechanism which forms a stream of inert gas in an optical path space including a space which is located between the stage and the optical system and through which the exposure light passes. In addition, a member forms a predetermined space between the optical path space and a peripheral space outside the optical path space in the exposure apparatus, and a gas supply mechanism supplies the inert gas into the predetermined space.
摘要翻译：使用曝光光将形成在掩模上的图案投影并传送到基板的曝光装置包括在包括空间的光路空间中形成惰性气体流的台，光学系统和气流形成机构，位于舞台和光学系统之间，曝光光通过该系统。此外，构件在光路空间与曝光装置的光路空间外的周边空间之间形成预定的空间，气体供给机构将惰性气体供给到规定的空间。

8. 发明授权

US06934003B2 Exposure apparatus and device manufacturing method 失效
公开(公告)号：US06934003B2
公开(公告)日：2005-08-23
申请号：US10329816
申请日：2002-12-27
申请人： Noriyasu Hasegawa , Eiji Sakamoto , Shigeru Terashima
发明人： Noriyasu Hasegawa , Eiji Sakamoto , Shigeru Terashima
IPC分类号： G03F7/20 , G03B27/42 , G03B27/52 , G03B27/62
CPC分类号： G03F7/70933 , G03F7/70883 , G03F7/70908
摘要： An exposure apparatus which projects and transfers a pattern formed on a mask to a substrate using exposure light includes a stage, an optical system, and a gas stream forming mechanism which forms a stream of inert gas in an optical path space including a space which is located between the stage and the optical system and through which the exposure light passes. In addition, a member forms a predetermined space between the optical path space and a peripheral space outside the optical path space in the exposure apparatus, and a gas supply mechanism supplies the inert gas into the predetermined space.

9. 发明授权

US5995582A X-ray reduction exposure apparatus and device manufacturing method using the same 失效
标题翻译： X射线减少曝光装置及其制造方法
公开(公告)号：US5995582A
公开(公告)日：1999-11-30
申请号：US835721
申请日：1997-04-10
申请人： Shigeru Terashima , Masami Tsukamoto
发明人： Shigeru Terashima , Masami Tsukamoto
IPC分类号： G21K5/02 , G03F7/20 , G21K1/06 , H01L21/027 , G21K5/00
CPC分类号： G03F7/70891 , G21K1/06
摘要： A deflection mirror is disposed before an X-ray mask so as to reflect an X-ray beam and to project it to the X-ray mask. The X-ray mask is disposed opposed to a wafer with a distance D therebetween, and the X-ray beam reflected by the X-ray mask is projected onto the wafer through a reduction projection optical system. The deflecting mirror is disposed, in an example, at a position satisfying a relation D>L>d/(tan .delta.1+tan .delta.2) where L is the distance from the X-ray mask to an edge of the deflection mirror closer to the path of the X-ray beam reflected by the X-ray mask, d is the width of irradiation of the X-ray beam upon the X-ray mask, and .delta.1 and .delta.2 are incidence angles of the X-ray beam at upper and lower edges of the irradiation width d, respectively, upon the X-ray mask. This assures a compact structure wherein, even when a wafer of a large diameter is used, illumination light to the mask is not intercepted.
摘要翻译：偏转镜设置在X射线掩模之前，以便反射X射线束并将其投影到X射线掩模。 X射线掩模与其间具有距离D的晶片相对设置，并且由X射线掩模反射的X射线束通过还原投影光学系统投影到晶片上。偏转镜例如设置在满足关系D> L> d /（tanδ1 +tanδ2）的位置处，其中L是从X射线掩模到偏转镜的边缘的距离更近到由X射线掩模反射的X射线束的路径，d是X射线掩模上的X射线束的照射宽度，δ1和δ2是X射线的入射角在X射线掩模上分别照射宽度d的上边缘和下边缘。这确保了紧凑的结构，其中即使当使用大直径的晶片时，不遮挡对掩模的照明光。

10. 发明申请

US20130040240A1 CHARGED PARTICLE BEAM DRAWING APPARATUS, AND METHOD OF MANUFACTURING ARTICLE 失效
标题翻译：充电颗粒光束绘图设备及其制造方法
公开(公告)号：US20130040240A1
公开(公告)日：2013-02-14
申请号：US13550702
申请日：2012-07-17
申请人： Shigeru Terashima
发明人： Shigeru Terashima
IPC分类号： G21K5/04 , G03F7/20 , G21K5/10
CPC分类号： G03F7/20 , B82Y10/00 , B82Y40/00 , G21K5/04 , G21K5/10 , H01J37/12 , H01J37/3177 , H01J2237/1205 , H01J2237/188
摘要： A charged particle beam drawing apparatus includes an electrostatic lens including an electrode member and configured to project the plurality of charged particle beams onto the substrate via the electrode member. In the electrode member are formed a plurality of first openings via which the plurality of charged particle beams pass, and a plurality of second openings different from the plurality of first openings, a total area of the plurality of second openings being not smaller than a total area of the plurality of first openings.
摘要翻译：带电粒子束描绘装置包括具有电极部件的静电透镜，并配置成经由电极部件将多根带电粒子束投射到基板上。在电极部件中形成有多个带电粒子束通过的多个第一开口以及与多个第一开口不同的多个第二开口，多个第二开口的总面积不小于总数多个第一开口的区域。

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